Journal of Information Display最新文献_第5页

Analysis of heat diffusion considering driving images on 6-inch flexible AMOLED display 考虑驱动图像的6英寸柔性AMOLED显示器热扩散分析

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2023-01-30 DOI: 10.1080/15980316.2023.2169378

Chang-Hoon Jeon, Ji Woong Park, Byung-Wook Kang, Suhyuk Jang, Kyung Joon Kwon, Soon‐Kwang Hong, Yong‐Min Ha, Jin Jang

{"title":"Analysis of heat diffusion considering driving images on 6-inch flexible AMOLED display","authors":"Chang-Hoon Jeon, Ji Woong Park, Byung-Wook Kang, Suhyuk Jang, Kyung Joon Kwon, Soon‐Kwang Hong, Yong‐Min Ha, Jin Jang","doi":"10.1080/15980316.2023.2169378","DOIUrl":"https://doi.org/10.1080/15980316.2023.2169378","url":null,"abstract":"We report the heat diffusion on flexible active-matrix organic light-emitting diode (AMOLED) displays. Two-dimensional heat diffusion is used for the heat conduction and convection analysis, generated on the surface of a flexible AMOLED display. The heat diffusion parameters and the time constant are studied in terms of the driving conditions of a 6-inch flexible AMOLED display. The temperature distribution on the screen is obtained by applying heat diffusion using the finite difference method (FDM) with an FPGA driving board. We can predict temperature more precisely by calculating temperature changes according to the images. The proposed method improves the accuracy of predicting the temperature. The average and standard deviation of the temperature error (TER) are ∼0.5°C and ∼0.5°C for the proposed method, respectively. For the conventional method, the values are ∼4.5°C and ∼0.7°C, respectively, neglecting the increase in temperature based on the images. This method can be used in compensation technology for OLEDs and thin film transistors (TFTs) that require accurate temperature distribution on the screen.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":null,"pages":null},"PeriodicalIF":3.7,"publicationDate":"2023-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48315086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Boosting coloration efficiency in an electrochromic device using an ITO/Ag/ITO multilayered electrode and porous WO3 chromic layer 利用ITO/Ag/ITO多层电极和多孔WO3铬层提高电致变色器件的显色效率

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2023-01-30 DOI: 10.1080/15980316.2023.2170486

Sueon Lee, Min Jae Kim, Sang Ho Lee, Seung Hye Jeong, J. Kwon, J. Jeong

{"title":"Boosting coloration efficiency in an electrochromic device using an ITO/Ag/ITO multilayered electrode and porous WO3 chromic layer","authors":"Sueon Lee, Min Jae Kim, Sang Ho Lee, Seung Hye Jeong, J. Kwon, J. Jeong","doi":"10.1080/15980316.2023.2170486","DOIUrl":"https://doi.org/10.1080/15980316.2023.2170486","url":null,"abstract":"ABSTRACT High-performance electrochromic devices (ECDs) were fabricated by introducing indium tin oxide/silver/indium tin oxide (IAI) multilayers as a transparent conducting oxide (TCO) electrode in conjunction with microstructural tailoring of tungsten trioxide (WO3) as an electrochromic (EC) layer. A 15-nm-thick Ag film with a preferential orientation of (111) and smooth morphology resulted in a high optical transmittance of 90.9% and sheet resistance 16.7 Ω/sq, making it a suitable TCO. In addition, the open network WO3 film used as an EC layer was deposited by carefully controlling the chamber pressure during the sputtering process. A high chamber pressure (2.0 Pa) resulted in a WO3 film with the lowest mass density (5.72 g/cm3) and a rough morphology. Half-cell ECDs consisting of a TCO bottom electrode (BE)/WO3 stack immersed in LiClO4 electrolyte were fabricated to verify the impact of using the IAI multi-layer stack and tailored WO3 film as a TCO and EC layer, respectively. Significant enhancement in terms of coloration efficiency was achieved for the ECDs by adopting the IAI TCO and open network WO3 EC layer compared to counterpart devices with an ITO TCO or dense WO3 EC film. This can be explained by the facile carrier extraction (injection) and transport of Li ions.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":null,"pages":null},"PeriodicalIF":3.7,"publicationDate":"2023-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43569001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Highly stable Mo/Al bilayer electrode for stretchable electronics 用于可拉伸电子器件的高度稳定的Mo/Al双层电极

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2023-01-07 DOI: 10.1080/15980316.2022.2163313

J. Choi, Chan Woo Park, B. Na, Jong-Heon Yang, J. Na, JaeEun Pi, Hee‐Ok Kim, Chi-Sun Hwang, Seunghyup Yoo

引用次数: 0

Performance evaluation of dual-layer architectures for high dynamic range head mounted displays 高动态范围头戴式显示器双层结构的性能评估

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2023-01-02 DOI: 10.1080/15980316.2022.2154861

Miaomiao Xu, H. Hua

引用次数: 0

Single-ended amplifier-based touch readout circuit with immunity to display noise 基于单端放大器的触摸读出电路，具有抗显示噪声的能力

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2022-12-12 DOI: 10.1080/15980316.2022.2154863

Yongsang Yoo, B. Choi

引用次数: 0

Facile control of p-type SnO TFT performance with restraining redox reaction by ITO interlayers ITO中间层抑制氧化还原反应对p型SnO TFT性能的控制

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2022-11-30 DOI: 10.1080/15980316.2022.2151522

Su-Hwan Choi, Hye-mi Kim, Jinsin Park

引用次数: 0

Reconstructing room scales with a single sound for augmented reality displays 用单个声音重建增强现实显示的房间尺度

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2022-11-15 DOI: 10.1080/15980316.2022.2145377

Benjamin Liang, AN Liang, Irán R. Román, Tomer Weiss, Budmonde Duinkharjav, J. Bello, Qi Sun

{"title":"Reconstructing room scales with a single sound for augmented reality displays","authors":"Benjamin Liang, AN Liang, Irán R. Román, Tomer Weiss, Budmonde Duinkharjav, J. Bello, Qi Sun","doi":"10.1080/15980316.2022.2145377","DOIUrl":"https://doi.org/10.1080/15980316.2022.2145377","url":null,"abstract":"Perception and reconstruction of our 3D physical environment is an essential task with broad applications for Augmented Reality (AR) displays. For example, reconstructed geometries are commonly leveraged for displaying 3D objects at accurate positions. While camera-captured images are a frequently used data source for realistically reconstructing 3D physical surroundings, they are limited to line-of-sight environments, requiring time-consuming and repetitive data-capture techniques to capture a full 3D picture. For instance, current AR devices require users to scan through a whole room to obtain its geometric sizes. This optical process is tedious and inapplicable when the space is occluded or inaccessible. Audio waves propagate through space by bouncing from different surfaces, but are not 'occluded' by a single object such as a wall, unlike light. In this research, we aim to ask the question ‘can one hear the size of a room?’. To answer that, we propose an approach for inferring room geometries only from a single sound, which we define as an audio wave sequence played from a single loud speaker, leveraging deep learning for decoding implicitly-carried spatial information from a single speaker-and-microphone system. Through a series of experiments and studies, our work demonstrates our method's effectiveness at inferring a 3D environment's spatial layout. Our work introduces a robust building block in multi-modal layout reconstruction.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":null,"pages":null},"PeriodicalIF":3.7,"publicationDate":"2022-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45405487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

High performance carbon nanotubes thin film transistors by selective ferric chloride doping 选择性氯化铁掺杂的高性能碳纳米管薄膜晶体管

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2022-11-07 DOI: 10.1080/15980316.2022.2141362

Noh-Hwal Park, Eun-Sol Shin, G. Ryu, Jimin Kwon, Dongseob Ji, Hyunjin Park, Yunkon Kim, Yong‐Young Noh

{"title":"High performance carbon nanotubes thin film transistors by selective ferric chloride doping","authors":"Noh-Hwal Park, Eun-Sol Shin, G. Ryu, Jimin Kwon, Dongseob Ji, Hyunjin Park, Yunkon Kim, Yong‐Young Noh","doi":"10.1080/15980316.2022.2141362","DOIUrl":"https://doi.org/10.1080/15980316.2022.2141362","url":null,"abstract":"Single wall carbon nanotubes (SWNT) have been a significant research topic as active layers for thin film transistors (TFTs) due to their high charge carrier mobility beyond that of crystalline silicon. In this study, we report an effective approach to achieve a very high field-effect mobility and on/off ratio for solution processed semiconducting SWNT TFTs, by selective doping through contact with a thin ferric chloride (FeCl3) dopant layer. The semiconducting layer is formed by a double spin coating of the highly purified (>99%) high pressure carbon mono oxide (HiPCO) SWNT sorted by wrapping of poly (3-dodecylthiophene-2,5-diyl) (P3DDT). In order to achieve effective hole injection from the top Au source electrode without increasing the off-state drain current, less purified (98-99%) SWNTs produced by the plasma discharge process sorted by wrapping of poly (9,9-di-n-dodecylfluorene) (PFDD) are formed on the top of HiPCO film. Significantly improved TFT performance is achieved by the insertion of a few nanometers of a FeCl3 dopant layer at the semiconductor-contact interface. A significant high hole field-effect of 48.35 ± 3.11 cm2V−1s−1 (bare: 6.18 ± 0.87 cm2V−1s−1) with a reasonable on/off current ratio of 105, and low off current of ∼80 pA, are obtained by controlling the concentration of FeCl3 dopant (thickness = 1.5 nm) at the contact. Mobility is improved further at 2.5 nm thickness of the FeCl3 dopant layer resulting in a hole mobility of 177 ± 13.2 cm2 V−1s−1, an on/off ratio of 7.4 × 103, and off state current of 1.2 × 10−9 A.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":null,"pages":null},"PeriodicalIF":3.7,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45175988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mechanical simulation for the bending process of the AMOLED panel pad AMOLED面板衬垫弯曲过程的力学模拟

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2022-11-02 DOI: 10.1080/15980316.2022.2139301

Dirui Wu, Yongzhen Jia, Dunming Liao, Boding Zhang, Chen Liu, Ningning Wang, Wenjing Peng, Liting Huang

{"title":"Mechanical simulation for the bending process of the AMOLED panel pad","authors":"Dirui Wu, Yongzhen Jia, Dunming Liao, Boding Zhang, Chen Liu, Ningning Wang, Wenjing Peng, Liting Huang","doi":"10.1080/15980316.2022.2139301","DOIUrl":"https://doi.org/10.1080/15980316.2022.2139301","url":null,"abstract":"Panel pad bending is a critical process to improve the screen-to-body ratio of an active-matrix organic light-emitting diode (AMOLED) panel. The failure analysis of the metal wirings is the key to ensure the reliability of signal transmission when the pad be bent to the back of the panel. In the present work, the sub-modeling technique combined with the periodic boundary condition was used to simulate the stress distribution of the bending area of the pad. The progressive failure of bent metal wirings was investigated by the extended finite element method. It is proved to be rational to prevent the wirings damage if the interlayer dielectric is replaced by an organic layer. In order to reduce stress of metal wirings, it is a measure to replace the original ultraviolet (UV) curable adhesive with a higher-modulus UV adhesive. The simulated results also show that rectangular perforations can avoid the stress concentration caused by the holes compared with circular perforations. For better stress distribution of metal wirings, it is necessary to increase the lengths of the rectangular holes and decrease the widths of that to a certain extent, which is helpful for restraining crack propagation by means of low-stress zones and holes.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":null,"pages":null},"PeriodicalIF":3.7,"publicationDate":"2022-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42956708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Oxide thin-film transistors based on i-line stepper process for high PPI displays 用于高PPI显示器的基于i线步进工艺的氧化物薄膜晶体管

IF 3.7 3区工程技术

Journal of Information Display Pub Date : 2022-11-02 DOI: 10.1080/15980316.2022.2139769

Ji-Min Park, S. Jang, Seoung Min Lee, Min-Ho Kang, K. Chung, Hyunsook Kim

引用次数: 0