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Optical Properties of Some Quaternary Copper Chalcopyrites 某些第四纪铜黄铜矿的光学性质
January Pub Date : 1988-12-31 DOI: 10.1002/CRAT.2170230123
D. K. Ghosh, L. K. Samanta, G. Bhar
{"title":"Optical Properties of Some Quaternary Copper Chalcopyrites","authors":"D. K. Ghosh, L. K. Samanta, G. Bhar","doi":"10.1002/CRAT.2170230123","DOIUrl":"https://doi.org/10.1002/CRAT.2170230123","url":null,"abstract":"","PeriodicalId":14710,"journal":{"name":"January","volume":"32 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82195603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
OD Approach to the Polytypism in CdP2 CdP2多型性的OD分析
January Pub Date : 1988-12-31 DOI: 10.1002/CRAT.2170230108
K. Fichtner
{"title":"OD Approach to the Polytypism in CdP2","authors":"K. Fichtner","doi":"10.1002/CRAT.2170230108","DOIUrl":"https://doi.org/10.1002/CRAT.2170230108","url":null,"abstract":"The structures of CdP2 are described as stacking sequences of layers of CdP4 tetrahedra. On the basis of the OD theory of Dornberger-Schiff, the stacking possibilities are derived and convenient stacking notations proposed. The idealized layer structure is given, the percentage of α-CdP2 for any stacking sequence defined. The symbol of the OD groupoid family is P11(n)2m · (4) x, y with parameters x = y = 1/2 and (4+), (4−) as the two alternative transformations from layer to layer. The net constants are a = b ≈ 5.29 A; the “thickness” of a layer is c0 ≈ 4.95 A. \u0000 \u0000 \u0000 \u0000Die Strukturen von CdP2 werden als Stapelfolgen von Schichten von CdP4-Tetraedern beschrieben. Auf der Grundlage der OD-Theorie von Dornberger-Schiff werden die Stapelmoglichkeiten abgeleitet und zweckmasige Polytypensymbole vorgeschlagen. Die idealisierte Schichtstruktur wird angegeben und der Prozentsatz von α-CdP2 in einer beliebigen Stapelfolge definiert. Das Symbol fur die OD-Gruppoid-Familie ist P11(n) 2m · (4) x, y mit Parametern x = y = 1/2 und (4+), (4−) als den zwei moglichen Transformationen von Schicht zu Schicht. Die Netzkonstanten sind a = b ≈ 5.29 A, die „Schichtdicke” ist c0 ≈ 4.95 A.","PeriodicalId":14710,"journal":{"name":"January","volume":"35 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73668473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Growth of NaX Zeolites in the Presence of Triethanolamine (TEA) 三乙醇胺(TEA)存在下NaX沸石的生长
January Pub Date : 1988-12-31 DOI: 10.1002/CRAT.2170230125
W. Schmitz, J. Kornatowski, G. Finger
{"title":"Growth of NaX Zeolites in the Presence of Triethanolamine (TEA)","authors":"W. Schmitz, J. Kornatowski, G. Finger","doi":"10.1002/CRAT.2170230125","DOIUrl":"https://doi.org/10.1002/CRAT.2170230125","url":null,"abstract":"","PeriodicalId":14710,"journal":{"name":"January","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73974916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Nonstoichiometry and Point Defects in PbTe PbTe的非化学计量学和点缺陷
January Pub Date : 1988-12-31 DOI: 10.1002/CRAT.2170230111
M. Schenk, H. Berger, A. Klimakow, M. Mühlberg, M. Wienecke
{"title":"Nonstoichiometry and Point Defects in PbTe","authors":"M. Schenk, H. Berger, A. Klimakow, M. Mühlberg, M. Wienecke","doi":"10.1002/CRAT.2170230111","DOIUrl":"https://doi.org/10.1002/CRAT.2170230111","url":null,"abstract":"The nostoichiometry and point-defect structure of PbTe was investigated by various methods including carrier-concentration, lattice-constant, positron-annihilation and vapour-density measurements. The results are discussed in comparison with data published by other authors. New aspects are obtained especially from high-temperature experiments. A model of nonstoichiometry and defect structure in PbTe is proposed. The stability region of PbTe is essentially broader than reported until now. The disorder takes place mainly in the Pb sublattice, i.e., there occur charged Pb vacancies (Te-rich) and Pb interstitials (Pb-rich), respectively, as well as probably additional neutral Pb interstitials in Pb-rich PbTe. \u0000 \u0000 \u0000 \u0000Die Nichtstochiometrie und Punktdefektstruktur von PbTe wurde mit verschiedenen Methoden untersucht, u. a. durch Messungen der Ladungstragerkonzentration, der Gitterkonstante, der Positronenannihilation sowie der Dampfdichte. Die Ergebnisse werden mit denen anderer Autoren verglichen. Neue Aspekte ergeben sich insbesondere aus Hochtemperaturmessungen. Ein Modell der Nichtstochiometrie und der Defektstruktur in PbTe wird vorgeschlagen. Das Stabilitatsgebiet von PbTe ist wesentlich breiter als bisher berichtet. Die Fehlordnung tritt hauptsachlich im Pb-Untergitter auf, d. h., es existieren geladene Pb-Leerstellen (Te-reich) bzw. Pb-Zwischengitterionen (Pb-reich) sowie zusatzlich wahrscheinlich neutrale Pb-Zwischengitteratome in Pb-reichem PbTe.","PeriodicalId":14710,"journal":{"name":"January","volume":"37 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83846662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Crystal and Molecular Structure of (2-3-n-2-Butyne-l,4-diol)-bis-(triphenylphosphan)- nickel(O) Ni{[(C6H5)3P]2 (C4H6O2)} (2-3-n-2-丁炔- 1,4 -二醇)-双-(三苯基磷)-镍(O) Ni{[(C6H5)3P]2 (C4H6O2)}的晶体和分子结构
January Pub Date : 1988-12-31 DOI: 10.1515/9783112485606-004
H. Görls, B. Schulz, U. Rosenthal, W. Schulz
{"title":"Crystal and Molecular Structure of (2-3-n-2-Butyne-l,4-diol)-bis-(triphenylphosphan)- nickel(O) Ni{[(C6H5)3P]2 (C4H6O2)}","authors":"H. Görls, B. Schulz, U. Rosenthal, W. Schulz","doi":"10.1515/9783112485606-004","DOIUrl":"https://doi.org/10.1515/9783112485606-004","url":null,"abstract":"","PeriodicalId":14710,"journal":{"name":"January","volume":"176 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82983595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Epitaxy of AIBIIICVI 2 Semiconductors aibiiicv2半导体的外延
January Pub Date : 1988-12-31 DOI: 10.1515/9783112485606-002
B. Schumann, A. Tempel, G. Kühn
{"title":"Epitaxy of AIBIIICVI\u0000 2 Semiconductors","authors":"B. Schumann, A. Tempel, G. Kühn","doi":"10.1515/9783112485606-002","DOIUrl":"https://doi.org/10.1515/9783112485606-002","url":null,"abstract":"","PeriodicalId":14710,"journal":{"name":"January","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91071388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Revealing of Lattice Defects on (111) Faces of Gallium Phosphide and Indium Phosphide by Chemical Etching 化学蚀刻法揭示磷化镓和磷化铟(111)表面晶格缺陷
January Pub Date : 1988-12-31 DOI: 10.1002/CRAT.2170230109
G. Wagner, V. Gottschalch
{"title":"Revealing of Lattice Defects on (111) Faces of Gallium Phosphide and Indium Phosphide by Chemical Etching","authors":"G. Wagner, V. Gottschalch","doi":"10.1002/CRAT.2170230109","DOIUrl":"https://doi.org/10.1002/CRAT.2170230109","url":null,"abstract":"A solution is presented suitable for revealing lattice defects on (111) phosphorous faces of GaP and InP. It is possible to distinguish between pits originated by grown-in dislocations and microdefects such as perfect loops, faulted loops and precipitates and/or inclusions. Moreover it is also possible to reveal large stacking faults of Shockley type and microtwin lamellae. One to one correlations have been given by means of transmission electron microscopy. \u0000 \u0000 \u0000 \u0000Es wird eine neue Losung vorgestellt, die auf (111) Flachen von GaP und InP Gitterdefekte anazt. Es ist moglich zwischen Versetzungen und Mikrodefekten wie vollstandigen Versetzungsringen, unvollstandigen Versetzungsringen sowie Ausscheidungen und/oder Einschlussen zu unterscheiden. Neben ausgedehnten Stapelfehlern vom Shockley-Typ werden auch Mikrozwillingslamellen und Korngrenzen angeatzt. Eine exakte Korrelation der verschiedenen Atzerscheinungen mit den entsprechenden Gitterdefekten erfolgte mittels Transmissionselektronenmikroskopie.","PeriodicalId":14710,"journal":{"name":"January","volume":"38 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86957050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Preparation of GaAs Substrates for MBE MBE用砷化镓衬底的制备
January Pub Date : 1988-12-31 DOI: 10.1002/CRAT.2170230122
L. Pramatarova, E. Savova, G. Minchev, M. Mihailov
{"title":"Preparation of GaAs Substrates for MBE","authors":"L. Pramatarova, E. Savova, G. Minchev, M. Mihailov","doi":"10.1002/CRAT.2170230122","DOIUrl":"https://doi.org/10.1002/CRAT.2170230122","url":null,"abstract":"","PeriodicalId":14710,"journal":{"name":"January","volume":"44 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86030980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
X-ray Determination of Solid Solution Composition in the Melilite System Äkermanite (AK) — Gehlenite (Ge) - Soda Melilite (Sm) x射线测定墨利石体系中固溶体组成Äkermanite (AK) -绿长石(Ge) -苏打墨利石(Sm)
January Pub Date : 1988-12-31 DOI: 10.1515/9783112485606-015
W. Schmitz, P. Schreiter
{"title":"X-ray Determination of Solid Solution Composition in the Melilite System Äkermanite (AK) — Gehlenite (Ge) - Soda Melilite (Sm)","authors":"W. Schmitz, P. Schreiter","doi":"10.1515/9783112485606-015","DOIUrl":"https://doi.org/10.1515/9783112485606-015","url":null,"abstract":"","PeriodicalId":14710,"journal":{"name":"January","volume":"41 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81476013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Frontmatter
January Pub Date : 1988-12-31 DOI: 10.1515/9783112485606-fm
{"title":"Frontmatter","authors":"","doi":"10.1515/9783112485606-fm","DOIUrl":"https://doi.org/10.1515/9783112485606-fm","url":null,"abstract":"","PeriodicalId":14710,"journal":{"name":"January","volume":"298 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73387864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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