2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)最新文献_第5页

E-Textile RF Energy Harvesting and Storage using Organic-Electrolyte Carbon-Based Supercapacitors 使用有机电解质碳基超级电容器的电子纺织射频能量收集和存储

2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9643994

Mahmoud Wagih, N. Hillier, A. Weddell, S. Beeby

{"title":"E-Textile RF Energy Harvesting and Storage using Organic-Electrolyte Carbon-Based Supercapacitors","authors":"Mahmoud Wagih, N. Hillier, A. Weddell, S. Beeby","doi":"10.1109/IMWS-AMP53428.2021.9643994","DOIUrl":"https://doi.org/10.1109/IMWS-AMP53428.2021.9643994","url":null,"abstract":"Wearable radio frequency (RF) energy harvesting is highly dependent on the distance from the source and human-caused RF shadowing. Therefore, energy storage devices integrated with rectennas are of paramount importance to overcome this intermittency. In this paper, the use of carbon-based e-textile supercapacitors for storing the RF-DC converted power for powering body area networks nodes is investigated. A voltage doubler sub-1 GHz flexible rectifier, whose peak power conversion efficiency (PCE) approaches 80% is coupled to a two-cell 15.5 mF textile-based supercapacitor operating up to 4 V DC. Owing to the rectifier's low optimum load resistance and high DC Voltage output, the average charging PCE of the rectifier-supercapacitor module reaches 31% for a 9.5 dBm input. Time-varying s-parameter measurements are performed to compare the time-averaged matching as opposed to instantaneous measurements using a resistive load, where the textile supercapacitor exhibits a similar response to a commercial supercapacitor. Finally, the RF-charged textile supercapacitor is demonstrated, for the first time, powering a microcontroller and Bluetooth transmitter with an average power consumption of $350 mu mathrm{W}$ for up to 102 s, following 40 s of charging at 9.5 dBm, demonstrating its suitability for RF-powered body area networks applications.","PeriodicalId":143802,"journal":{"name":"2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127734093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A Radiation Pattern-Reconfigurable Antenna with Water and Anisotropic Materials 水和各向异性材料辐射方向图可重构天线

2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9643985

Ya-Xing Wang, Xuan-Ji Wu, Zhe Chen, Tao Yuan

引用次数: 0

A D-Band H-Plane Waveguide Power Divider 一种d波段h平面波导分压器

2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9643875

Mingyao Guan, Bo Zhang

引用次数: 0

A 26GHz On-chip Antenna Based on a 65nm CMOS Process for Microsensor Applications 基于65nm CMOS工艺的微传感器26GHz片上天线

2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9643899

Zhihang Xie, Zhuohan Sun, Feng Yan, Kangkang Sun, Jingjing Liu, Yuan Jiang, Mingwei Huang

引用次数: 0

Rapid Diplexer Design for High Isolation of Fundamental and 2nd-Harmonic Spectrums 高隔离基频和二谐波频谱的快速双工器设计

2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9643898

Yu-Xuan Deng, Rong-Yao Wang, Hao Zhang, Siping Gao

引用次数: 0

Pixelated Electromagnetic Surface Design Based on Deep Learning 基于深度学习的像素化电磁曲面设计

2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9643890

Shunjie Gu, Jianxun Su, Zengrui Li

引用次数: 0

A New Planar Multi-Fed High-Isolation Broadband Filtering Integrated Triplex Antenna 一种新型平面多馈高隔离宽带滤波集成三工天线

2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9643850

Wenjing Xu, Yongle Wu, Weimin Wang, Yuhao Yang, Yuan’an Liu

引用次数: 1

Co-design of GaN based Schottky Barrier Diode and Rectification Sensor with High Efficiency and Sensitivity GaN基肖特基势垒二极管与高效灵敏整流传感器的协同设计

2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9643880

Yang Li, Jiayi Yang, Taofei Pu, J. Ao

{"title":"Co-design of GaN based Schottky Barrier Diode and Rectification Sensor with High Efficiency and Sensitivity","authors":"Yang Li, Jiayi Yang, Taofei Pu, J. Ao","doi":"10.1109/IMWS-AMP53428.2021.9643880","DOIUrl":"https://doi.org/10.1109/IMWS-AMP53428.2021.9643880","url":null,"abstract":"In this paper, a quasi-vertical GaN-SBD and a rectification sensor are specially co-designed for wireless IOT application, i.e., long distance wireless power transmission and pressure sensing. Solutions including semiconductor devices, rectification circuits, and sensing mechanisms are discussed. First, a quasi-vertical GaN-SBD that specially optimized for 928 MHz rectification is proposed, with an especially enlarged junction capacitance of 0.845 pF, reduced series resistance of $1.81 Omega$, and suitable breakdown voltage of 35 V. Second, a single SBD based rectifier is designed and measured, with a power capacity over 31 dBm and a rectification efficiency better than 85%. Last, a low cost and low complexity rectification pressure sensor is designed by coupling the rectifier and a piezo-permittivity liquid metal elastomer foam, without introducing any extra pressure detection circuit. Experiments show that the prototype can send an audible and visual alarm to indicate a pressure loss, over a remote operation distance ranging from 0.1 to 3 meters.","PeriodicalId":143802,"journal":{"name":"2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124309604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Analysis of Heat Dissipation of Nanocrystalline Diamond Capping Layers for GaN HEMTs Applications 纳米晶金刚石盖层在GaN hemt中的散热分析

2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9643895

Huaixin Guo, Yizhuang Li, Y. Kong, Tangsheng Chen

{"title":"Analysis of Heat Dissipation of Nanocrystalline Diamond Capping Layers for GaN HEMTs Applications","authors":"Huaixin Guo, Yizhuang Li, Y. Kong, Tangsheng Chen","doi":"10.1109/IMWS-AMP53428.2021.9643895","DOIUrl":"https://doi.org/10.1109/IMWS-AMP53428.2021.9643895","url":null,"abstract":"The routes and mechanism of heat dissipation of nanocrystalline diamond capping layers for GaN HEMTs applications is systematically investigated by using three dimensional simulations with the finite element method. The distribution of heat for nanocrystalline diamond capping layers device is performed and those results demonstrate the path and mechanism of heat transfer for nanocrystalline diamond capped devices. Meanwhile, the effects of nanocrystalline diamond capping layers structures on the thermal performance of GaN HEMTs are investigated in detail based on temperature distribution around heat sources, and those results indicate geometric parameters of nanocrystalline diamond capping layers have crucial importance influence on heat dissipation, especially the distance between gate to nanocrystalline diamond. In addition, the analysis of temperature gradient illustrates the effect of geometric parameters on junction temperature, and highlight that nanocrystalline diamond capping layers provide a high thermal conductivity path for GaN devices.","PeriodicalId":143802,"journal":{"name":"2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123501229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A Dual-Circularly Polarized Antenna with Wide-Beamwidth 一种宽波束宽度双圆极化天线

2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9643947

Bing-Bing Huang, Nengwu Liu, G. Fu, Liangxin Xia

引用次数: 0