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2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)最新文献

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A 120–166 GHz InP HBT Frequency Doubler with Conversion Gain of 4.4 dB 一种转换增益4.4 dB的120-166 GHz InP HBT倍频器
2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9643995
Q. Yu, Limin Sun, Weihua Yu, Bowu Wang, Ming Zhou
{"title":"A 120–166 GHz InP HBT Frequency Doubler with Conversion Gain of 4.4 dB","authors":"Q. Yu, Limin Sun, Weihua Yu, Bowu Wang, Ming Zhou","doi":"10.1109/IMWS-AMP53428.2021.9643995","DOIUrl":"https://doi.org/10.1109/IMWS-AMP53428.2021.9643995","url":null,"abstract":"This letter presents a 120-166GHz active frequency doubler in a $0.5-mu mathrm{m}$ InP heterojunction bipolar transistor (HBT) technology ($mathrm{f}_{mathrm{T}}/mathrm{f}_{max}=350$ GHz /532 GHz) with a 3-metal layer, thin-film microstrip wiring environment. A single-ended topology is employed to realize a fully integrated wideband frequency doubler. The doubler core uses common-emitter transistors. The simulated results show that the proposed doubler achieves a peak conversion gain of 4.4 dB at 150 GHz with 46-GHz 3-dB gain bandwidth, a typical fundamental rejection of 27 dB, the maximum output power of −0.6 dBm and a peak power efficiency of 2.1% when dc power is 41.2mW.","PeriodicalId":143802,"journal":{"name":"2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125037585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved Joint Feeding Network for Mode Composite Coplanar Wave-Guide with Single Layer Structure 单层结构模态复合共面波导的改进联合馈电网络
2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9643870
Yihong Su, Zheng Liu, X. Lin
{"title":"Improved Joint Feeding Network for Mode Composite Coplanar Wave-Guide with Single Layer Structure","authors":"Yihong Su, Zheng Liu, X. Lin","doi":"10.1109/IMWS-AMP53428.2021.9643870","DOIUrl":"https://doi.org/10.1109/IMWS-AMP53428.2021.9643870","url":null,"abstract":"This paper, presents a single layer joint feeding network (JFN) for mode composite coplanar waveguide (MCCPW). The MCCPW is a composition of quasi-CPW and substrate integrated waveguide (SIW) supporting the quasi-TEM mode and TE10 mode as its fundamental mode respectively. The two modes can be independently excited by the two sub-transition. namely, the microstrip line to quasi-CPW transition and the coaxial line to SIW transition. the proposed JFN demonstrates a low loss, low fabrication complexity. A back-to-back JFN of MCCPW is de-signed as an example with two bands coverage from 3.6 GHz to 8.1 GHz and above 28 GHz. The proposed JFN can expand the application of the MCCPW in multi-band microwave to millimeter-wave circuits and antennas.","PeriodicalId":143802,"journal":{"name":"2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115591083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CMOS-Compatible InAlN/GaN HEMTs on Silicon for RF Power Amplifiers in 5G Mobile SoCs 用于5G移动soc中射频功率放大器的cmos兼容InAlN/GaN hemt
2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9643883
Hanlin Xie, Zhihong Liu, Wenrui Hu, Yu Gao, K. Lee, Yong-xin Guo, G. Ng
{"title":"CMOS-Compatible InAlN/GaN HEMTs on Silicon for RF Power Amplifiers in 5G Mobile SoCs","authors":"Hanlin Xie, Zhihong Liu, Wenrui Hu, Yu Gao, K. Lee, Yong-xin Guo, G. Ng","doi":"10.1109/IMWS-AMP53428.2021.9643883","DOIUrl":"https://doi.org/10.1109/IMWS-AMP53428.2021.9643883","url":null,"abstract":"In this work we demonstrated InAlN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate fabricated with Si CMOS-compatible metallization process for RF power amplifier applications in 5G low power mobile SOCs. The HEMTs exhibited a maximum drain current ($I_{text{dmax}}$) of 1.9 A/mm, a peak transconductance ($g_{mathrm{m}}$) of 490 mS/mm, a cutoff frequency ($f_{mathrm{T}}$) of 215 GHz and a maximum oscillation frequency ($f_{max}$) of 97 GHz. An effective electron velocity of $1.49times 10^{7}$ cm/s was extracted through delay time analysis. At a mobile SoC-compatible supply voltage of $V_{d}=5 mathrm{V}$, the device shows a high maximum output power density ($P_{text{outmax}}$) of 1.24 W/mm, a peak power-added efficiency (PAE) of 45%, and a gain of 16 dB at 5 GHz. These results indicate the great potential of InAlN/GaN HEMTs on silicon for high performance and low-cost RF power amplifiers in 5G mobile SoC applications.","PeriodicalId":143802,"journal":{"name":"2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128628284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Dual-Band Metasurface-Based Antenna with Shorting Pins 一种带短管脚的双频超表面天线
2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9643878
Wenzhang Zhang, Jiafeng Zhou, Yi Huang, Mobayode O. Akinsolu, Mingwei He, Bo Liu
{"title":"A Dual-Band Metasurface-Based Antenna with Shorting Pins","authors":"Wenzhang Zhang, Jiafeng Zhou, Yi Huang, Mobayode O. Akinsolu, Mingwei He, Bo Liu","doi":"10.1109/IMWS-AMP53428.2021.9643878","DOIUrl":"https://doi.org/10.1109/IMWS-AMP53428.2021.9643878","url":null,"abstract":"A dual-band metasurface (MTS)-based antenna can be realized by composite right-/left-handed (CRLH) structures for wireless power transfer or ambient wireless energy harvesting. The bandwidth in the right-handed (RH) region can be obtained by exciting different desired transverse magnetic (TM) modes while that in the left-handed (LH) region can be achieved by mushroom radiating structures. The position choice of shorting pins in mushroom structures is significant since it will not only affect the potential bandwidth in the RH region, but also be related to the resonant frequencies in the LH region. The positions of the shorting pins will be chosen where the Electric field distribution is minimal for modes excited in the RH region. The proposed dual-band MTS-based antenna with an overall size of 0.375 $lambda_{0}times 0.375 lambda_{0}times 0.035 lambda_{0}$ can achieve 25% and 48% fractional bandwidths, and 5.0 and 9.6 dBi peak gains in the lower and higher frequency band, respectively.","PeriodicalId":143802,"journal":{"name":"2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121476780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Slab Air-Filled Substrate Integrated Waveguide (SAFSIW) Cruciform Coupler 平板充气基板集成波导(SAFSIW)十字形耦合器
2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9643964
Nhu-Huan Nguyen, A. Ghiotto, A. Vilcot, T. Vuong, K. Wu
{"title":"Slab Air-Filled Substrate Integrated Waveguide (SAFSIW) Cruciform Coupler","authors":"Nhu-Huan Nguyen, A. Ghiotto, A. Vilcot, T. Vuong, K. Wu","doi":"10.1109/IMWS-AMP53428.2021.9643964","DOIUrl":"https://doi.org/10.1109/IMWS-AMP53428.2021.9643964","url":null,"abstract":"A 3-dB cruciform coupler based on slab air-filled substrate integrated waveguide (SAFSIW) is presented, analyzed, and demonstrated in Ka-band. Using the odd-even mode analysis, a design procedure is detailed to simplify the design process. The odd-even mode decomposition is shown to be in good agreement with the full structure simulation results. Measurement results confirm the operation of this cruciform coupler with an isolation level better than 15.7 dB over the entire Ka-band. The proposed coupler contributes to expanding the air-filled substrate integrated waveguide (AFSIW) component library.","PeriodicalId":143802,"journal":{"name":"2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124120823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Novel Wideband Programmable-Gain Amplifier based on Active-Feedback Technology 一种基于有源反馈技术的新型宽带可编程增益放大器
2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9643957
Yue Yin, Lei Liu, Run-Huan Zhang, Shi-gang Zhou
{"title":"A Novel Wideband Programmable-Gain Amplifier based on Active-Feedback Technology","authors":"Yue Yin, Lei Liu, Run-Huan Zhang, Shi-gang Zhou","doi":"10.1109/IMWS-AMP53428.2021.9643957","DOIUrl":"https://doi.org/10.1109/IMWS-AMP53428.2021.9643957","url":null,"abstract":"A new type of approach for programmable-gain amplifier (PGA) design with wideband and accurate dB-linear characteristic is presented. This circuit is based on the active-feedback bandwidth extension circuit structure, and the variation of voltage gain of this circuit can approach the pseudo-exponential function by using a binary-weighted switching technique without additional exponential generator. Therefore, compared with the traditional circuits, the proposed circuit can achieve wider −3dB bandwidth while obtaining wide digital dB-linear gain control, smaller gain error, smaller chip area and lower power consumption. The proposed PGA is simulated in a standard $0.18mumathrm{m}$ CMOS technology. The gain ranges from −3.87 dB to 3.57 dB with a gain error less than ±0.017 dB. The frequency is almost flat up to 1GHz. The NF is around 12 dB and it consumes about 6.5 mW under a 1.8 V power supply.","PeriodicalId":143802,"journal":{"name":"2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"3 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124185131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel Architecture for THz-Band Intersatellite Link Service 一种新的太赫兹波段卫星间链路业务体系结构
2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9644008
Buning Tian, Wenqian Shen, Xiang Gao, Yongxin Guo, Jianping An, Xiangyuan Bu
{"title":"A Novel Architecture for THz-Band Intersatellite Link Service","authors":"Buning Tian, Wenqian Shen, Xiang Gao, Yongxin Guo, Jianping An, Xiangyuan Bu","doi":"10.1109/IMWS-AMP53428.2021.9644008","DOIUrl":"https://doi.org/10.1109/IMWS-AMP53428.2021.9644008","url":null,"abstract":"In this paper, several available intersatellite link(ISL) architectures are first described. The beam coverage range at azimuth and the maximum scanning angle at elevation of ISL payloads on each satellite are given. A novel architecture for THz-band ISL service is then presented and the coverage properties of ISL payload are introduced.","PeriodicalId":143802,"journal":{"name":"2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126321763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SIW Leaky-Wave Antenna with Zirconia Ceramic Block for Suppressing the Open Stopband 抑制开阻带的氧化锆陶瓷块SIW漏波天线
2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9643920
Ziwei Li, Hongxing Zheng
{"title":"SIW Leaky-Wave Antenna with Zirconia Ceramic Block for Suppressing the Open Stopband","authors":"Ziwei Li, Hongxing Zheng","doi":"10.1109/IMWS-AMP53428.2021.9643920","DOIUrl":"https://doi.org/10.1109/IMWS-AMP53428.2021.9643920","url":null,"abstract":"In this paper, a period substrate integrated waveguide (SIW) leaky-wave antenna (LWA) with a continuous beam-scanning capability is proposed. Structure of the transverse slot stacked by zirconia ceramic block (ZCB) is periodically loaded in each unit cell of the LWA. For the ZCB functioning as a dielectric resonator, another resonant network is introduced to the origin equivalent circuit. We then change the dimensions of the ZCB to make the unit cell's reactance component to be zero at broadside frequency, as a result, the open stopband is successfully suppressed.","PeriodicalId":143802,"journal":{"name":"2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125995722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Wimax Antenna Design and Experiments with Noise Troubleshooting Wimax天线设计与噪声排除实验
2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9643998
W. Lai
{"title":"Wimax Antenna Design and Experiments with Noise Troubleshooting","authors":"W. Lai","doi":"10.1109/IMWS-AMP53428.2021.9643998","DOIUrl":"https://doi.org/10.1109/IMWS-AMP53428.2021.9643998","url":null,"abstract":"This article introduces 806.11x antenna design in mobile device. The 806.11x antenna has been realized by using the flexible printed circuit (FPC) substrate and experimental were achieved. The proposed peak gain (dBi), average gain (dBi), results of main and aux antenna can be promoting two dimensions oriented. The applications of this proposal include assessment of antenna connector, coaxial cable routing with mobile device from 806.11x antenna and the platform effect of 100kHz signal noise on excellence performance of impedance matching about filter of crystal and voltage-controlled oscillator (VCO) from RF frontend.","PeriodicalId":143802,"journal":{"name":"2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130082641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Substrate Integrated Components for Passive Millimeterwave-Frequency Beamforming Networks 无源毫米波频率波束形成网络的基片集成元件
2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2021-11-15 DOI: 10.1109/IMWS-AMP53428.2021.9644020
Laura Van Messem, A. Moerman, O. Caytan, Igor Lima de Paula, Bram Hoflack, Bram Stroobandt, S. Lemey, H. Rogier
{"title":"Substrate Integrated Components for Passive Millimeterwave-Frequency Beamforming Networks","authors":"Laura Van Messem, A. Moerman, O. Caytan, Igor Lima de Paula, Bram Hoflack, Bram Stroobandt, S. Lemey, H. Rogier","doi":"10.1109/IMWS-AMP53428.2021.9644020","DOIUrl":"https://doi.org/10.1109/IMWS-AMP53428.2021.9644020","url":null,"abstract":"In this paper, we propose passive millimeterwave (mmWave) components for Butler matrix beamforming networks implemented in grounded-coplanar waveguide (GCPW) technology designed for integration and co-optimization with an antenna array operating in the 28 GHz 5G band. Within the frequency band of interest, covering the [26.5 GHz–29.5 GHz] spectrum, the insertion loss of the designed hybrid coupler and crossover stays well below 0.75 dB, while the amplitude imbalance remains below 0.5 dB and the phase imbalance does not exceed 5°.","PeriodicalId":143802,"journal":{"name":"2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131233171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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