A 120–166 GHz InP HBT Frequency Doubler with Conversion Gain of 4.4 dB

Abstract

This letter presents a 120-166GHz active frequency doubler in a $0.5-\mu \mathrm{m}$ InP heterojunction bipolar transistor (HBT) technology ($\mathrm{f}_{\mathrm{T}}/\mathrm{f}_{\max}=350$ GHz /532 GHz) with a 3-metal layer, thin-film microstrip wiring environment. A single-ended topology is employed to realize a fully integrated wideband frequency doubler. The doubler core uses common-emitter transistors. The simulated results show that the proposed doubler achieves a peak conversion gain of 4.4 dB at 150 GHz with 46-GHz 3-dB gain bandwidth, a typical fundamental rejection of 27 dB, the maximum output power of −0.6 dBm and a peak power efficiency of 2.1% when dc power is 41.2mW.