International Journal of Electronics Letters最新文献_第3页

A SMALL CONFORMAL WEARABLE FOUR-PORT WIDE BAND ANTENNA for 5G APPLICATIONS 用于5G应用的小型保形可穿戴四端口宽带天线

International Journal of Electronics Letters Pub Date : 2023-10-10 DOI: 10.1080/21681724.2023.2267205

V. Prithivirajan, S. Poongodi, R. Thandaiah Prabu, S. Kamatchi, A Anand

{"title":"A SMALL CONFORMAL WEARABLE FOUR-PORT WIDE BAND ANTENNA for 5G APPLICATIONS","authors":"V. Prithivirajan, S. Poongodi, R. Thandaiah Prabu, S. Kamatchi, A Anand","doi":"10.1080/21681724.2023.2267205","DOIUrl":"https://doi.org/10.1080/21681724.2023.2267205","url":null,"abstract":"ABSTRACTThis article proposes a small multiple-input multiple-output (MIMO) wearable antenna system with four coplanar waveguide (CPW)-fed antennas operating in the New Radio band 79 (4.4 – 5 GHz) applications. The suggested MIMO antenna system consists of four identical hexagonal shaped monopole radiators, each is printed on polymide substrate with the size of 1.33 λ0 x 1.03 λ0 where, λ0 is the wave length at centre frequency 4.5 GHz. By placing four antenna elements in orthogonal arrangements independent radiation pattern is achieved thereby increasing isolation better than 17 dB. Specifically, no dedicated mechanism has been introduced to obtain the substantial isolation. All the antenna elements in the MIMO arrangement have broadband operation resonating between 4.4 – 5 GHz covering n79 (New Radio band) 5 G applications. The proposed antenna has a peak gain around 3.8 – 4dBi over the operating frequency with radiation efficiency ranging from 88 to 90%. Since, flexible substrate is used in the design, conformability of the antenna has been verified by performing bending analysis. The MIMO antenna provides better measured results which consistent with the simulated results, therefore the antenna explored in this research could be the better candidate for 5 G conformal and wearable applications.DisclaimerAs a service to authors and researchers we are providing this version of an accepted manuscript (AM). Copyediting, typesetting, and review of the resulting proofs will be undertaken on this manuscript before final publication of the Version of Record (VoR). During production and pre-press, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal relate to these versions also.","PeriodicalId":13968,"journal":{"name":"International Journal of Electronics Letters","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136358819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hot Carrier Effects on HighFrequency Characteristics of SiGe HBTs 热载流子效应对SiGe HBTs高频特性的影响

International Journal of Electronics Letters Pub Date : 2023-10-09 DOI: 10.1080/21681724.2023.2267207

Ann Mary Alex, Jobymol Jacob

{"title":"Hot Carrier Effects on HighFrequency Characteristics of SiGe HBTs","authors":"Ann Mary Alex, Jobymol Jacob","doi":"10.1080/21681724.2023.2267207","DOIUrl":"https://doi.org/10.1080/21681724.2023.2267207","url":null,"abstract":"ABSTRACTHot carrier (HC)induced degradation effects on the high-frequency characteristics of SiGe Heterojunction Bipolar Transistors (HBTs) are investigated using the TCAD tool. Simulations are carried out on a 2D structure with specific trap definitions to analyse the high-frequency figures of merit. The DC and low-frequency AC gains show similar degradation due to the generation of nonideal base current. No significant variation is observed in cut-off frequency mainly due to the minimal effect of HCs on transconductance and base emitter capacitance. However, significant degradation in maximum oscillation frequency is observed primarily because of the rise in base resistance. Finally, S parameter simulations are also carried out to investigate the hot carrier effect on RF characteristics and found that the parameters S11 and S21 are affected by HCs.KEYWORDS: SiGe HBThot carrier degradationhigh-frequency characteristicsS parameters AcknowledgmentsThe authors would like to acknowledge the DST, the Government of India, for providing improved infrastructure to the host institution through the FIST project. The authors also extend their sincere thanks to the MEMS and Microelectronics Laboratory, IIT Madras, for rendering the lab facility to do the simulations. The authors sincerely thank Dr Anjan Chakravorty, IIT Madras, and Dr Uppili S. Raghunathan, GlobalFoundries, USA, for useful preliminary discussions.Disclosure statementNo potential conflict of interest was reported by the author(s).","PeriodicalId":13968,"journal":{"name":"International Journal of Electronics Letters","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135095411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Single source multi gain 7-level switched-capacitor inverter topology with reduce device Count 单源多增益7电平开关电容逆变器拓扑与减少器件计数

International Journal of Electronics Letters Pub Date : 2023-10-06 DOI: 10.1080/21681724.2023.2267206

Kasinath Jena, Dhananjay Kumar, Ashutosh Kumar Singh, Prashant Singh Rathore, Deepak Verma

{"title":"Single source multi gain 7-level switched-capacitor inverter topology with reduce device Count","authors":"Kasinath Jena, Dhananjay Kumar, Ashutosh Kumar Singh, Prashant Singh Rathore, Deepak Verma","doi":"10.1080/21681724.2023.2267206","DOIUrl":"https://doi.org/10.1080/21681724.2023.2267206","url":null,"abstract":"ABSTRACTA new multi gain SC inverter topology with fewer switching components and lower voltage stress is presented in this paper. It comprises eight switches and two capacitors, which raise the output voltage by three times the supply voltage. The capacitors voltages are automatically balanced to ensure proper operation. The circuit constructional, operation, and parameter optimisation techniques are discussed in details. A simple logic-based multicarrier Level Shift Pulse Width Modulation (LS-PWM) is employed to control the switching operation that reduces the complexity of the control circuit. Furthermore, a comparative analysis with other recent topologies has been presented to demonstrate the virtues of this approach. Finally, the proposed topology (PT) verification, feasibility, and effectiveness have been demonstrated both in simulation and experimentation.KEYWORDS: Cost functionLS-PWM techniqueMultilevel inverterSwitched-capacitorTSVDisclaimerAs a service to authors and researchers we are providing this version of an accepted manuscript (AM). Copyediting, typesetting, and review of the resulting proofs will be undertaken on this manuscript before final publication of the Version of Record (VoR). During production and pre-press, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal relate to these versions also.","PeriodicalId":13968,"journal":{"name":"International Journal of Electronics Letters","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134944084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A dual-band FSS based electromagnetic shield for 5G and 6G applications 用于5G和6G应用的基于FSS的双频电磁屏蔽

International Journal of Electronics Letters Pub Date : 2023-10-04 DOI: 10.1080/21681724.2023.2267208

Harikrishna Paik, Kambham Premchand

{"title":"A dual-band FSS based electromagnetic shield for 5G and 6G applications","authors":"Harikrishna Paik, Kambham Premchand","doi":"10.1080/21681724.2023.2267208","DOIUrl":"https://doi.org/10.1080/21681724.2023.2267208","url":null,"abstract":"ABSTRACTThe present paper proposes a dual-band frequency selective surface for 5 G and 6 G shielding applications. The design evolves from a fractal circular patch etched from the metallic square patch to achieve wideband, angular stability, and polarisation insensitivity up to incident angles of 45°. The proposed FSS unit cell has a dimension of 0.2λ0 ×0.2λ0, where λ0 is the free space wavelength corresponding to the resonant frequency. The FSS shield provides dual stopbands centred at 3.5 GHz and 5.9 GHz with fractional bandwidths of 13.4% and 5.08%, respectively. A prototype was fabricated on an FR4 substrate to validate the design, which includes 6 × 6 elements with dimensions of 108.8 mm × 108.8 mm × 1.6 mm. Measurements have shown a consistent shielding effectiveness of 35 dB at the lower band and more than 27 dB at the upper band, which are in good agreement with simulation results. The compact size, simple geometry, and descent shielding effectiveness are the unique features of the proposed design which may be a good choice for 5 G and 6 G communications.KEYWORDS: Frequency selective surfaceelectromagnetic shielddual bandbandstop and microwave frequenciesDisclaimerAs a service to authors and researchers we are providing this version of an accepted manuscript (AM). Copyediting, typesetting, and review of the resulting proofs will be undertaken on this manuscript before final publication of the Version of Record (VoR). During production and pre-press, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal relate to these versions also.","PeriodicalId":13968,"journal":{"name":"International Journal of Electronics Letters","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135645420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A novel circularly polarized, CPW-Based MIMO antenna for 5G-Wireless communication in sub-6 GHz band 一种用于sub- 6ghz频段5G-Wireless通信的新型圆极化cpw MIMO天线

International Journal of Electronics Letters Pub Date : 2023-10-03 DOI: 10.1080/21681724.2023.2266608

Atanu Chowdhury, Prashant Ranjan

{"title":"A novel circularly polarized, CPW-Based MIMO antenna for 5G-Wireless communication in sub-6 GHz band","authors":"Atanu Chowdhury, Prashant Ranjan","doi":"10.1080/21681724.2023.2266608","DOIUrl":"https://doi.org/10.1080/21681724.2023.2266608","url":null,"abstract":"ABSTRACTThis paper proposes a circularly polarised co-planar waveguide (CPW) based on a two-components multiple-input-multiple-output (MIMO) antenna for 5 G communications in the band of sub-6 GHz. The practical dimension of the proposed antenna is 49.35 mm × 98.7 mm × 1.6 mm. Three complementary-split-ring-resonators (CSRR) are applied to resonate at 3.3 GHz and 3.84 GHz. The optimised proposed antenna can be used for 5 G LTE-band (n74-n78) worldwide, 2 G, 3 G, 4 G, WiFi and WiMAX applications (1 GHz - 4.4 GHz). The radiation efficiency is significantly more than 60% and for the specified 5 G band (sub-6 GHz), the measured efficiency is 80% to 85%. The proposed antenna has achieved high isolation (more than 30 dB) and excellent diversity performance like Envelop Correlation Coefficient (ECC), Diversity Gain (DG), Total Active Reflection Coefficient (TARC), and Channel Capacity Loss (CCL). Simulated results are also verified with experimental results.KEYWORDS: CPWMIMO antenna5G communicationssub-6 GHzECCTARCDisclaimerAs a service to authors and researchers we are providing this version of an accepted manuscript (AM). Copyediting, typesetting, and review of the resulting proofs will be undertaken on this manuscript before final publication of the Version of Record (VoR). During production and pre-press, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal relate to these versions also.","PeriodicalId":13968,"journal":{"name":"International Journal of Electronics Letters","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135697019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reconfigurable Non-uniform Band-generating Filter Bank for Channelizer 用于信道发生器的可重构非均匀带生成滤波器组

International Journal of Electronics Letters Pub Date : 2023-09-25 DOI: 10.1080/21681724.2023.2261080

Rinu C Varghese, K Inbanila

{"title":"Reconfigurable Non-uniform Band-generating Filter Bank for Channelizer","authors":"Rinu C Varghese, K Inbanila","doi":"10.1080/21681724.2023.2261080","DOIUrl":"https://doi.org/10.1080/21681724.2023.2261080","url":null,"abstract":"ABSTRACTMulti-band channelizer system must choose a specific channel from a broad bandwidth signal. A variety of distinct wireless standards and frequency bands are used in the channelizer. Reconfigurable and non-uniform multi-channels with narrow transition widths are necessary for channelizers. In this paper, a low complexity reconfigurable non-uniform band-generating filter bank (RNBFB) is proposed for multi-band channelizer. The RNBFB is used to generate a variety of non-uniform channels with a narrow transition width. Utilizing frequency response masking (FRM) and the cosine modulation (CM) approach, many non-uniform channels are created. Comparing RNBFB to other state-of-the-art techniques, RNBFB generates multi-bands for channelizer with less multiplier complexities. For the better understanding of hardware complexity, the proposed RNBFB is implemented efficiently. A multiplier-free design such as Canonical Signed Digit (CSD), Multi-Objective Artificial Bee Colony (MOABC), and Shift Inclusive Differential Coefficients (SIDC) with a Common Sub-expression Elimination (CSE) are included in the suggested strategy to further optimize the RNBFB.Keywords: FIR filtersFrequency response masking (FRM)Cosine modulation (CM)DisclaimerAs a service to authors and researchers we are providing this version of an accepted manuscript (AM). Copyediting, typesetting, and review of the resulting proofs will be undertaken on this manuscript before final publication of the Version of Record (VoR). During production and pre-press, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal relate to these versions also.","PeriodicalId":13968,"journal":{"name":"International Journal of Electronics Letters","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135817209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Lp minimisation in sparse array Beamforming using Semidefinite Relaxation 利用半定松弛实现稀疏阵列波束形成中的Lp最小化

International Journal of Electronics Letters Pub Date : 2023-08-25 DOI: 10.1080/21681724.2023.2251766

Kanika Agarwal, C. Rai, Rajni Yadav

引用次数: 0

A 12T low-power full adder cell with a novel dynamic circuit 一种具有新颖动态电路的12T低功耗全加法器单元

International Journal of Electronics Letters Pub Date : 2023-08-22 DOI: 10.1080/21681724.2023.2248654

Shih-Chang Hsia, Kuan-Cheng Chen

引用次数: 0

A Finite HARQ-based Non-orthogonal multiple access for Reliable Communications 一种用于可靠通信的基于有限HARQ的非正交多址接入

International Journal of Electronics Letters Pub Date : 2023-08-17 DOI: 10.1080/21681724.2023.2248655

A. Misra, I. Bala, D. Bepari, S. Mondal

引用次数: 0

An Inverted L-shaped Antenna Pair with High Isolation Characteristics for Mobile Terminals with Zero Ground Clearance 零离地移动终端高隔离特性的倒l型天线对

International Journal of Electronics Letters Pub Date : 2023-07-22 DOI: 10.1080/21681724.2023.2240075

Jiayi Wang, Yunxue Xu, Chenshu Sun, Chengrui Wang, Jiahao Tong, Chuanhuizi Gan, Yuxiang Liu

引用次数: 0