Photomask Japan最新文献_第3页

Birefringence mapping of optical material by use of supercontinuum vector beams 利用超连续介质矢量光束实现光学材料的双折射映射

Photomask Japan Pub Date : 2021-04-05 DOI: 10.1117/12.2601123

Juri Ogawa, M. Shoji, Ryohei Kageyama, T. Wakayama, T. Higashiguchi

引用次数: 0

Ongoing development of ultrafast DUV pulse laser repair for EUV photomasks 超快DUV脉冲激光修复EUV光罩的研究进展

Photomask Japan Pub Date : 2021-04-05 DOI: 10.1117/12.2601395

Tod E. Robinson, J. Leclaire, I. Mochi, R. Nebling, Y. Ekinci, D. Kazazis

引用次数: 1

A deep learning toolset to mask analysis with SEM digital twins 一个深度学习工具集来掩盖分析与SEM数字双胞胎

Photomask Japan Pub Date : 2021-04-05 DOI: 10.1117/12.2601856

A. Baranwal, Suhas Pillai, T. Nguyen, J. Yashima, Jim Dewitt, N. Nakayamada, M. Wahlsten, A. Fujimura

{"title":"A deep learning toolset to mask analysis with SEM digital twins","authors":"A. Baranwal, Suhas Pillai, T. Nguyen, J. Yashima, Jim Dewitt, N. Nakayamada, M. Wahlsten, A. Fujimura","doi":"10.1117/12.2601856","DOIUrl":"https://doi.org/10.1117/12.2601856","url":null,"abstract":"Sub-nanometer accuracy attainable with electron micrograph SEM images is the only way to “see” well enough for the mask analysis needed in EUV mask production. Because SEM images are pixel dose maps, deep learning (DL) offers an attractive alternative to the tedious and error-prone mask analysis performed by the operators and expert field application engineers in today’s mask shops. However, production demands preclude collecting a large enough variety and number of real SEM images to effectively train deep learning models. We have found that digital twins that can mimic the SEM images derived from CAD data provide an exceptional way to synthesize ample data to train effective DL models. Previous studies [1, 2, 3, 4] have shown how deep learning can be used to create digital twins. However, it was unclear if SEM images generated with digital twins would have sufficient quality to train a deep learning network to classify real SEM images. This paper shows how we built three DL tools for SEM-based mask analysis. The first tool automatically filters good quality SEM images, particularly for test chips, using a DL-based binary classifier. A second tool uses another DL model to align CAD and SEM images for applications where it is important that features on both the images are properly aligned. A third tool uses a DL multi-class classifier to categorize various types of VSB mask writer defects. In developing the three tools, we trained state-of-the-art deep neural networks on SEM images generated using digital twins to achieve accurate results on real SEM images. Furthermore, we validated the results of trained deep learning models through model visualization and accuracy-metric evaluation.","PeriodicalId":138407,"journal":{"name":"Photomask Japan","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127961961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Automatic design of the build-in lens mask for three-dimensional photo lithography 自动设计的内置镜头掩模，用于三维照相光刻

Photomask Japan Pub Date : 2021-04-05 DOI: 10.1117/12.2598156

Tomoaki Osumi, M. Sasago, M. Yasuda, Y. Hirai

引用次数: 0

The study of a phase difference defect inspection technology 相位差缺陷检测技术的研究

Photomask Japan Pub Date : 2021-04-05 DOI: 10.1117/12.2595839

Tosyo Cho, Sui Ryu, S. Cho

引用次数: 0

Fundamental research activities on EUV lithography at NewSUBARU synchrotron light facility 在新subaru同步加速器光设备上的EUV光刻基础研究活动

Photomask Japan Pub Date : 2021-04-05 DOI: 10.1117/12.2600896

T. Watanabe, T. Harada, S. Yamakawa

引用次数: 0

Damage-less removal of surface contamination using atomic hydrogen generated on heated tungsten mesh 使用在加热的钨网上产生的氢原子无损地去除表面污染

Photomask Japan Pub Date : 2021-04-05 DOI: 10.1117/12.2597935

A. Heya, T. Harada, M. Niibe, K. Sumitomo, Takeo Watanabe

{"title":"Damage-less removal of surface contamination using atomic hydrogen generated on heated tungsten mesh","authors":"A. Heya, T. Harada, M. Niibe, K. Sumitomo, Takeo Watanabe","doi":"10.1117/12.2597935","DOIUrl":"https://doi.org/10.1117/12.2597935","url":null,"abstract":"An extreme ultraviolet (EUV) light with a wavelength of 13.5 nm has been introduced to 7 nm FinFET technology. Optical elements such as Mo/Si multilayer mirror in lithography equipment are contaminated with hydrocarbon during the EUV light irradiation. The reflectance of the mirrors is decreased by carbon contamination. Therefore, the removal method of the carbon contamination is required for reduction of maintenance cost. The surface treatment using atomic hydrogen generated by a heated tungsten mesh, called as atomic hydrogen annealing (AHA), have been investigated for cleaning of the optical elements used in the synchrotron facility. The Au/Cr/Si substrate, Ni mirror and Ni diffraction grating with carbon contamination were cleaned and the reflectance of the mirrors was recovered by AHA. In addition, the AHA conditions could be optimized for cleaning of Mo/Si multilayer mirrors from the relationship between the treatment conditions and degradation. Furthermore, to clarify the reaction of atomic hydrogen with not only C-C bond but also C-O bond, the graphene oxide (GO) film was also treated by AHA. The C-O-C bonds in the GO films were preferentially reduced by AHA. It is found that the surface contamination consisting of hydrocarbon and/or C-O bond on the optical elements is removed without damage. The ability of atomic hydrogen to clean the optical elements had been confirmed. The findings are useful for the advanced lithography technology using EUV light.","PeriodicalId":138407,"journal":{"name":"Photomask Japan","volume":"161 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127390632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spectra of high energy ions as debris in laser-produced plasma EUV source 高能离子在激光等离子体极紫外光源中作为碎片的光谱

Photomask Japan Pub Date : 2021-04-05 DOI: 10.1117/12.2601122

Yuto Nakayama, Hiromu Kawasaki, T. Higashiguchi

引用次数: 0

Beyond EUV measurement at NewSUBARU synchrotron light facility 在NewSUBARU同步加速器光设备上的超极紫外测量

Photomask Japan Pub Date : 2021-04-05 DOI: 10.1117/12.2600986

Takuto Fujii, Shinji Yamakawa, T. Harada, Takeo Watanabe

{"title":"Beyond EUV measurement at NewSUBARU synchrotron light facility","authors":"Takuto Fujii, Shinji Yamakawa, T. Harada, Takeo Watanabe","doi":"10.1117/12.2600986","DOIUrl":"https://doi.org/10.1117/12.2600986","url":null,"abstract":"In 2019, EUV lithography technology with a wavelength of 13.5 nm was used for the mass production of semiconductor logic devices with 7 nm node. As with small feature size of electronic circuits in semiconductor device will be required in the future, beyond EUV (BEUV) lithography with exposure wavelength around 6.7 nm is a candidate for the next generation lithography. In BEUV, the developments of high-reflective multilayers, high-sensitive resists, and high-power light sources are critical issues. Thus, we have developed BEUV evaluation tools in NewSUBARU synchrotron light facility. Accurate BEUV reflectometry is significant for the development of high-reflective BEUV multilayer. For the accurate reflectometry, higher-diffraction-order generated from a monochromator should be suppressed. At the BL10 beamline at NewSUBARU, the components of second and third-diffraction-order light are 7% mixed into the BEUV measurement light. Mo transmission filter with a 200-nm-thick was previously used to suppress the higher-order light to 1/10, which was insufficient for target accuracy of 0.1%. We have developed a high-order-light cutting unit consisting of two mirrors with TiO2 coating, which suppressed the high-order light to 1/100.","PeriodicalId":138407,"journal":{"name":"Photomask Japan","volume":"282 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116084910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advanced AFM nanomachining: high aspect repairs 先进的AFM纳米加工:高侧面修复

Photomask Japan Pub Date : 2021-04-05 DOI: 10.1117/12.2601389

M. J. Cadena, Tod E. Robinson, Marty Klos

引用次数: 1