Photomask Japan最新文献

{"title":"How smart is your BEOL? productivity improvement through intelligent automation","authors":"K. Schulz, K. Egodage, Gilles Tabbone, A. Garetto","doi":"10.1117/12.2282804","DOIUrl":"https://doi.org/10.1117/12.2282804","url":null,"abstract":"The back end of line (BEOL) workflow in the mask shop still has crucial issues throughout all standard steps which are inspection, disposition, photomask repair and verification of repair success. All involved tools are typically run by highly trained operators or engineers who setup jobs and recipes, execute tasks, analyze data and make decisions based on the results. No matter how experienced operators are and how good the systems perform, there is one aspect that always limits the productivity and effectiveness of the operation: the human aspect. Human errors can range from seemingly rather harmless slip-ups to mistakes with serious and direct economic impact including mask rejects, customer returns and line stops in the wafer fab. Even with the introduction of quality control mechanisms that help to reduce these critical but unavoidable faults, they can never be completely eliminated. Therefore the mask shop BEOL cannot run in the most efficient manner as unnecessary time and money are spent on processes that still remain labor intensive. The best way to address this issue is to automate critical segments of the workflow that are prone to human errors. In fact, manufacturing errors can occur for each BEOL step where operators intervene. These processes comprise of image evaluation, setting up tool recipes, data handling and all other tedious but required steps. With the help of smart solutions, operators can work more efficiently and dedicate their time to less mundane tasks. Smart solutions connect tools, taking over the data handling and analysis typically performed by operators and engineers. These solutions not only eliminate the human error factor in the manufacturing process but can provide benefits in terms of shorter cycle times, reduced bottlenecks and prediction of an optimized workflow. In addition such software solutions consist of building blocks that seamlessly integrate applications and allow the customers to use tailored solutions. To accommodate for the variability and complexity in mask shops today, individual workflows can be supported according to the needs of any particular manufacturing line with respect to necessary measurement and production steps. At the same time the efficiency of assets is increased by avoiding unneeded cycle time and waste of resources due to the presence of process steps that are very crucial for a given technology. In this paper we present details of which areas of the BEOL can benefit most from intelligent automation, what solutions exist and the quantification of benefits to a mask shop with full automation by the use of a back end of line model.","PeriodicalId":138407,"journal":{"name":"Photomask Japan","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131234348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrolytic etching of fine stainless-steel pipes patterned by laser-scan lithography","authors":"Hiroshi Takahashi, T. Sagara, T. Horiuchi","doi":"10.1117/12.2277823","DOIUrl":"https://doi.org/10.1117/12.2277823","url":null,"abstract":"Recently, it is required to develop a method for fabricating cylindrical micro-components in the field of measurement and medical engineering. Here, electrolytic etching of fine stainless-steel pipes patterned by laser-scan lithography was researched. The pipe diameter was 100 μm. At first, a pipe coated with 3-7 μm thick positive resist (tok, PMER P LA-900) was exposed to a violet laser beam with a wavelength of 408 nm (Neoark,TC20-4030-45). The laser beam was reshaped in a circle by placing a pinhole, and irradiated on the pipe by reducing the size in 1/20 using a reduction projection optics. Linearly arrayed 22 slit patterns with a width of 25 μm and a length of 175 μm were delineated in every 90-degree circumferential direction. That is, 88 slits in total were delineated at an exposure speed of 110 μm/s. In the axial direction, patterns were delineated at intervals of 90 μm. Following the pattern delineation, the pipe masked by the resist patterns was electrolytically etched. The pipe was used as an anode and an aluminum cylinder was set as a cathode around the pipe. As the electrolyte, aqueous solution of NaCl and NH4Cl was used. After etching the pipe, the resist was removed by ultrasonic cleaning in acetone. Although feasibility for fabricating multi-slit pipes was demonstrated, sizes of the etched slits were enlarged being caused by the undercut, and the shapes were partially deformed, and all the pipes were snapped at the chuck side.","PeriodicalId":138407,"journal":{"name":"Photomask Japan","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133209995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"GPU-accelerated inline linearity correction: pixel-level dose correction (PLDC) for the MBM-1000","authors":"H. Zable, Hironobu Matsumoto, Kenichi Yasui, Ryosuke Ueba, N. Nakayamada, N. Shirali, Yukihiro Masuda, R. Pearman, A. Fujimura","doi":"10.1117/12.2281922","DOIUrl":"https://doi.org/10.1117/12.2281922","url":null,"abstract":"Over the last two decades, eBeam mask writers have added inline correction features. Particularly when minimum feature sizes on mask went below 100nm a decade ago, the need for more precision within a reasonable write time increased the demand for more corrections. Inline correction is better for turnaround time and throughput, but inline correction is computationally limited because it is unacceptable for computation to limit the machine write time. Simultaneously, the same need for linearity correction, printability enhancement, and resilience to manufacturing variation has caused much innovation in offline mask data preparation and mask process correction. Typically, the writer performs inline correction for backscatter, fogging, loading, charging and thermal effects, but leaves <10μm effects to offline correction. With multi-beam writers, the write time is independent of shape count. Any set of input shapes is rasterized to a set of arrays of equal sized pixels that are each independently dosed to write the desired shapes. Multi-beam writers also have a certain minimum write time that is required for writing even a very small number of simple shapes. This gives rise to the possibility of providing linearity correction features, even for the short-range effects as inline correction in the writer. Such inline correction has zero impact on throughput and turnaround time of mask making. This paper introduces the GPU-accelerated inline linearity correction capability of the NuFlare MBM-1000 for the first time.","PeriodicalId":138407,"journal":{"name":"Photomask Japan","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130833094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quartz 9-inch size mask blanks for ArF PSM (Phase Shift Mask)","authors":"N. Harashima, T. Isozaki, A. Kawanishi, Shuichiro Kanai, K. Kageyama, H. Iso, Tatsuya Chishima","doi":"10.1117/12.2282803","DOIUrl":"https://doi.org/10.1117/12.2282803","url":null,"abstract":"Semiconductor technology nodes are steadily miniaturizing. On the other hand, various efforts have been made to reduce costs, mass production lines have shifted from 200 mmφ of Si wafer to 300 mmφ, and technology development of Si wafer 450 mmφ is also in progress. As a photomask, 6-inch size binary Cr mask has been used for many years, but in recent years, the use of 9-inch binary Cr masks for Proximity Lithography Process in automotive applications, MEMS, packages, etc. has increased, and cost reduction has been taken. Since the miniaturization will progress in the above applications in the future, products corresponding to miniaturization are also desired in 9-inch photomasks. The high grade Cr - binary mask blanks used in proximity exposure process, there is a prospect of being able to use it by ULVAC COATING CORPORATION's tireless research. As further demands for miniaturization, KrF and ArF Lithography Process, which are used for steppers and scanners , there are also a demand for 9-inch size Mask Blanks. In ULVAC COATING CORPORATION, we developed a 9 - inch size KrF PSM mask Blanks prototype in 2016 and proposed a new high grade 9 - inch photomask. This time, we have further investigated and developed 9-inch size ArF PSM Mask Blanks corresponding to ArF Lithography Process, so we report it.","PeriodicalId":138407,"journal":{"name":"Photomask Japan","volume":"134 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134348574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"New PSM optimized for stable resolution of fine holes in FPD","authors":"Nobuhisa Imashiki, Yutaka Yoshikawa, M. Hayase","doi":"10.1117/12.2278689","DOIUrl":"https://doi.org/10.1117/12.2278689","url":null,"abstract":"Recently, due to increases in the definition of high function panels for mobile devices such as smartphones and tablets, LCD panel TFT and OLED (organic electro luminescence display) circuits are becoming increasingly denser and more miniaturized by the year. TFT and OLED circuits are composed of several layers, such as gate, semiconductor and contact hole (C / H). It is particularly difficult to obtain a stable resolution for C/H due to the decrease in the C/H process margin (EL, DOF, MEEF) as a result of increases in the density of the circuit. Moreover, C/H productivity has also markedly decreased due to an increase in the exposure dose. In response to this, attenuated phase shift mask (Att. PSM) for large size photomasks have been proposed as a means to improve the process margin in FPD. We have developed new PSM that can further improve the process margin and the productivity of C/H via the effective positioning of a high transmittance phase shift film. Using a 1.5um sized hole as the target, we confirmed the improvement effect of the optimized PSM via a software simulation and an exposure test. Hereafter it is necessary for us to optimize the new PSM for each panel process so as to allow us to use this mask in actual processes.","PeriodicalId":138407,"journal":{"name":"Photomask Japan","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129973404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Application of advanced structure to multi-tone mask for FPD process","authors":"Jinhan Song, Jin-Woong Jeong, Kyu-Sik Kim, Woo-Gun Jeong, Sang-Pil Yun, Dong-Heok Lee, Sangsoo Choi","doi":"10.1117/12.2278714","DOIUrl":"https://doi.org/10.1117/12.2278714","url":null,"abstract":"In accordance with improvement of FPD technology, masks such as phase shift mask (PSM) and multi-tone mask (MTM) for a particular purpose also have been developed. Above all, the MTM consisted of more than tri-tone transmittance has a substantial advantage which enables to reduce the number of mask demand in FPD fabrication process contrast to normal mask of two-tone transmittance.[1,2] A chromium (Cr)-based MTM (Typically top type) is being widely employed because of convenience of etch process caused by its only Cr-based structure consisted of Cr absorber layer and Cr half-tone layer. However, the top type of Cr-based MTM demands two Cr sputtering processes after each layer etching process and writing process. For this reason, a different material from the Cr-based MTM is required for reduction of mask fabrication time and cost. In this study, we evaluate a MTM which has a structure combined Cr with molybdenum silicide (MoSi) to resolve the issues mentioned above. The MoSi which is demonstrated by integrated circuit (IC) process is a suitable material for MTM evaluation. This structure could realize multi-transmittance in common with the Cr-based MTM. Moreover, it enables to reduce the number of sputtering process. We investigate a optimized structure upon consideration of productivity along with performance such as critical dimension (CD) variation and transmittance range of each structure. The transmittance is targeted at h-line wavelength (405 nm) in the evaluation. Compared with Cr-based MTM, the performances of all Cr-/MoSi-based MTMs are considered.","PeriodicalId":138407,"journal":{"name":"Photomask Japan","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115270168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"EUV modeling in the multi-beam mask writing era","authors":"R. Pearman, H. Zable, A. Fujimura","doi":"10.1117/12.2282784","DOIUrl":"https://doi.org/10.1117/12.2282784","url":null,"abstract":"For some years it has been known that the presence of a multi-layer stack creates an enhanced back-scatter effect at the 1μm length scale. Several authors have reported a non-Gaussian behavior – exponential or worse – that is challenging to both simulate and correct for in a production environment due to the long interaction area of the effect. With the onset of extreme ultra-violet (EUV) lithography, and the likely use in the new multi-beam mask writers, we revisit the EUV midrange effect from first principles, identify the impact from the new mask writers, and demonstrate a production-ready system to characterize and correct for the effect.","PeriodicalId":138407,"journal":{"name":"Photomask Japan","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121127801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"EUV repair process optimization and integration","authors":"P. Nesládek, A. Lajn, T. Schedel, M. Bender","doi":"10.1117/12.2278726","DOIUrl":"https://doi.org/10.1117/12.2278726","url":null,"abstract":"EUV technology is according to current trend approaching the final development phase in which defect free EUV masks are of key importance for development and optimization of the lithography process. This task consists of three contributing aspects- defect free multilayer blank, mask manufacturing process with very low defect formation probability and availability of repair process for EUV mask. In comparison to optical mask, development of the repair process for EUV mask is different in several aspects. The fact, that the TaN absorber is placed on top of Mo/Si mirror is making the process very sensitive to variation of the mask material, as the etch rate of the mirror is significantly higher, than that of absorber, when no capping layer is present between the absorber and ML mirror. The presence of the Ru capping layer increases the process window due to significant selectivity improvement by one or two orders of magnitude, however, the capping layer is very sensitive to damage by preceding manufacturing processes. Its thickness and also it chemical purity - lack of modification by incorporation of impurities is crucial for successful mask repair. The repair process for optical masks is typically optimized using AIMS for both development and qualification of the process. The availability of EUV AIMS system is very limited, for what reason we have to rely on other measures during the process development and use the AIMS for process qualification only, or use correlation between e.g. CD SEM or AFM measurement and AIMS data for selection and qualification of the repair process. Also the usage of mask – exposure on the scanner is modifying the mask surface. Therefore the impact of the mask exposure needs to be investigated, when EUV gets in HVM stage. In the past, the influence of the mask cleaning process on the integrity of EUV mask was investigated, with respect to several lithography-critical parameters as actinic reflectivity, critical dimension (CD) shift, edge roughness and surface roughness. The reparability of the mask was so far not in focus, assuming, that mask can be repaired anytime during its lifetime. This missing item needed for the successful usage of EUV mask needs to be checked and status confirmed prior start of the HVM.","PeriodicalId":138407,"journal":{"name":"Photomask Japan","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131796274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Shin-Etsu super-high-flat substrate for FPD panel photomask","authors":"Youkou Ishitsuka, D. Harada, Atsushi Watabe, M. Takeuchi","doi":"10.1117/12.2324277","DOIUrl":"https://doi.org/10.1117/12.2324277","url":null,"abstract":"Recently, high-resolution exposure machine has been developed for production of high-definition (HD) panels and higher-flat photomask substrates for FPD is being expected for panel makers to produce HD panels. In this report, we review the Shin-Etsu’s advanced technique of producing super-high-flat and shape-controlled large size photomask substrates that we reported the last PMJ 2017 a year ago and make a subsequent progress report thus far. Shin-Etsu has developed surface polishing and planarization technology of photomask substrates. Our most advanced IC Photomask substrates have gained the highest estimation and appreciation from our customers because of their excellent surface quality (non-defect surface without sub-0.1μm size defects) and ultimate flatness (sub-0.1μm order having achieved). By scaling up those IC photomask substrate technologies and developing unique large-size processing technologies, we have achieved creating high-flat large substrates, even G8.x-photomask and G10-photomask substrates as well as regular G6-G8 photomask substrates. The core technology is that the surface shape of the substrate is completely controlled by the numerical control system with height information inputs and the processing calculation. For example, we can regularly produce substrates with their flatness of 3μm or less for each size, measurement of which is carried out with high reliability tuned flatness tester. In addition, we can produce a substrate whose surface shape is arbitrary by using this core technology. It means we can deal with customers’ demanding shape or potentially necessary shape in the future to contribute to the soon-coming next generation FPD industries.","PeriodicalId":138407,"journal":{"name":"Photomask Japan","volume":"176 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133215445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mask CD relationship to temperature at the time backscatter is received","authors":"H. Zable, Tom Kronmiller, R. Pearman, B. Guthrie, N. Shirali, Yukihiro Masuda, T. Kamikubo, N. Nakayamada, A. Fujimura","doi":"10.1117/12.2282030","DOIUrl":"https://doi.org/10.1117/12.2282030","url":null,"abstract":"Mask writers need to be able to write sub-50nm features accurately. Nano-imprint lithography (NIL) masters need to create sub-20nm line and space (L:S) patterns reliably. Increasingly slower resists are deployed, but mask write times need to remain reasonable. The leading edge EBM-9500 offers 1200A/cm2 current density to shoot variable shaped beam (VSB) to write the masks. Last year, thermal effect correction (TEC) was introduced by NuFlare in the EBM-95001. It is a GPU-accelerated inline correction for the effect that the temperature of the resist has on CD. For example, a 100nm CD may print at 102nm where that area was at a comparably high temperature at the time of the shot. Since thermal effect is a temporal effect, the simulated temperature of the surface of the mask is dynamically updated for the effect of each shot in order to accurately predict the cumulative effect that is the temperature at the location of the shot at the time of the shot and therefore its impact on CD. The shot dose is changed to reverse the effects of the temperature change. This paper for the first time reveals an enhancement to this thermal model and a simulator for it. It turns out that the temperature at the time each location receives backscatter from other shots also make a difference to the CD. The effect is secondary, but still measurable for some resists and substrates. Results of a test-chip study will be presented. The computation required for the backscatter effect is substantial. It has been demonstrated that this calculation can be performed fast enough to be inline with the EBM-9500 with a reasonable-sized computing platform. Run-time results and the computing architecture will be presented.","PeriodicalId":138407,"journal":{"name":"Photomask Japan","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115637195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}