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2015 International Conference on Noise and Fluctuations (ICNF)最新文献

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A model of multi-layer metal foam sound absorption structure 多层金属泡沫吸声结构模型
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288576
Xiaohong Zhang, Zongjun Ma
{"title":"A model of multi-layer metal foam sound absorption structure","authors":"Xiaohong Zhang, Zongjun Ma","doi":"10.1109/ICNF.2015.7288576","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288576","url":null,"abstract":"Multi-layer metal foam sound absorption structure theory model based on transfer function model is proposed in this paper on the strength of the equivalent fluid model. The model can be used to predict the sound absorption effect of composite structure for sound absorbing and guide the design of the structure parameters. The accuracy of the model is verified by comparing the calculated results obtained from the model with the experimental data. The best sound absorption properties can be obtained by adjusting the multi-layer structure parameters of foam metal.","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122630743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Brownian motor efficiency enhanced by nonequilibrium noise 非平衡噪声提高布朗电机效率
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288599
J. Spiechowicz, P. Hānggi, J. Luczka
{"title":"Brownian motor efficiency enhanced by nonequilibrium noise","authors":"J. Spiechowicz, P. Hānggi, J. Luczka","doi":"10.1109/ICNF.2015.7288599","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288599","url":null,"abstract":"We study transport properties of an inertial Brownian motor which moves in a symmetric spatially periodic potential and is subjected to both a symmetric, unbiased time-periodic driving α cos (ωt) and a static constant force F or, likewise, nonequlibrium noise of equal mean value 〈(η(t)〉 = F. We focus on the efficiency of the motor and discuss various definitions. We show that within selected parameter regimes, nonequilibrium noise η (t) can be significantly more effective than the deterministic force F. This implies that the motor moves much faster and its efficiency distinctly increases. These features are independent of the assumed Brownian motor efficiency measure. We demonstrate this feature with detailed simulations by resource to generalized white Poissonian noise. Our theoretical results can be tested and corroborated experimentally by use of a setup that consists of a resistively and capacitively shunted Josephson junction.","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131365309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of extension architecture on the LF noise of UTBOX SOI MOSFETs 扩展结构对UTBOX SOI mosfet低频噪声的影响
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288629
V. Kudina, N. Garbar, E. Simoen, C. Claeys
{"title":"Effect of extension architecture on the LF noise of UTBOX SOI MOSFETs","authors":"V. Kudina, N. Garbar, E. Simoen, C. Claeys","doi":"10.1109/ICNF.2015.7288629","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288629","url":null,"abstract":"The effect of the S/D extensions architecture on the low-frequency noise and DC characteristics of Ultra-Thin Buried Oxide (UTBOX) SOI MOSFETs measured at zero/accumulated back-gate voltage is discussed. The undoped underlapped extensions were found to be responsible for an increased 1/f noise level and resistance of devices with extensionless architecture. The noise spectra of these devices also appears to be immune to the Linear Kink Effect Lorentzians contribution, usually observed in the noise spectra of MOSFETs with doped extensions when accumulated back gate voltage is applied.","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"38 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132836824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance analysis of correlation techniques for noise measurements 噪声测量相关技术的性能分析
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288585
M. Macucci, G. Basso, G. Fiori, P. Marconcini, I. Maione, B. Pellegrini
{"title":"Performance analysis of correlation techniques for noise measurements","authors":"M. Macucci, G. Basso, G. Fiori, P. Marconcini, I. Maione, B. Pellegrini","doi":"10.1109/ICNF.2015.7288585","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288585","url":null,"abstract":"The cross-correlation technique makes it possible to perform noise measurements with a sensitivity that would otherwise be unreachable, well below the noise floor of the amplifiers. Not all noise contributions from the amplifiers can however be eliminated or even just attenuated by cross-correlation: therefore it is important to take into consideration the detailed characteristics of the DUT (Device Under Test) and of the amplifiers when setting up the measurement system. Here we discuss the relative advantages of the different (“series” and “parallel”) configurations coupled with our technique for the accurate evaluation of the transimpedance between the noise source to be measured and the amplifier output. In particular, we show (i) the importance of the comparison between the real and the imaginary part of the cross-spectrum due to the asymmetry of the correlation amplifiers and (ii) how to estimate the maximum number of averages in the cross-spectrum evaluation that leads to an actual advantage from the point of view of the measurement accuracy. Finally we discuss the issue of shielding from external spurious signals, whose relevance is often underestimated.","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133054020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-frequency noise in organic transistors 有机晶体管中的低频噪声
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288547
O. Marinov, M. Deen
{"title":"Low-frequency noise in organic transistors","authors":"O. Marinov, M. Deen","doi":"10.1109/ICNF.2015.7288547","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288547","url":null,"abstract":"In this paper, we build on our previous work that introduced variable range hopping (VRH) as a plausible origin of flicker or low-frequency noise (LFN) in organic thin film transistors (OTFTs). While LFN is important in OTFTs, other issues with low mobility and contact effects are also active research and development efforts in the field. Since several LFN models have been proposed for OTFTs, then we compare and discuss the merits of each model. Specifically, we discuss models based on the Hooge equation, trapping (flat-band number fluctuation), VRH (conduction fluctuation) and the most recent layer-separation theory.","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116121323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Simple thermal noise estimation of OTA-based switched-capacitor filters 基于ota的开关电容滤波器的简单热噪声估计
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288545
C. Enz, F. Krummenacher, Assim Boukhayma
{"title":"Simple thermal noise estimation of OTA-based switched-capacitor filters","authors":"C. Enz, F. Krummenacher, Assim Boukhayma","doi":"10.1109/ICNF.2015.7288545","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288545","url":null,"abstract":"This paper presents a new analytical method to simply estimate the integrated thermal noise in switched-capacitor filters (SCF). It is shown how the Bode theorem, which is theoretically valid only for continuous-time passive filters, can be extended to also estimate the noise in active SCF built with operational transconductance amplifiers (OTAs).","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121220154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low-frequency noise of advanced memory devices 先进存储设备的低频噪声
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288633
E. Simoen, R. Ritzenthaler, T. Schram, N. Horiguchi, M. Jurczak, A. Thean, C. Claeys, M. Aoulaiche, A. Spessot, P. Fazan
{"title":"Low-frequency noise of advanced memory devices","authors":"E. Simoen, R. Ritzenthaler, T. Schram, N. Horiguchi, M. Jurczak, A. Thean, C. Claeys, M. Aoulaiche, A. Spessot, P. Fazan","doi":"10.1109/ICNF.2015.7288633","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288633","url":null,"abstract":"This paper reviews the application of low-frequency noise and Random Telegraph Signal (RTS) studies on advanced memory devices, namely, Metal-Insulator-Metal capacitors with SrTiOx as insulator, peripheral transistors for Dynamic Random Access Memories and Resistive Random Access Memory structures. In the first two cases, flicker noise is used to analyze the quality or defectiveness of the gate stack, while in the third case, both flicker and RTS noise provide information on the carrier trapping and transport.","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121355113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
An intuitive analysis of phase noise fundamental limits in LC oscillators LC振荡器相位噪声基限的直观分析
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288610
D. Manstretta, R. Castello
{"title":"An intuitive analysis of phase noise fundamental limits in LC oscillators","authors":"D. Manstretta, R. Castello","doi":"10.1109/ICNF.2015.7288610","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288610","url":null,"abstract":"An intuitive yet sufficiently accurate analysis of the phase noise performance of various commonly used oscillator topologies, including most types of class-B (standard and with tail filter), class-C, transformer-based and class-F is used to compare their fundamental limitation. The excess noise factor, that represents the difference between the maximum achievable Figure of Merit (for a given quality factor) and the actual one is evaluated for several state-of the-art implementations.","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123201712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Enhanced information transmission with generalized Gaussian signal via suprathreshold stochastic resonance 利用超阈值随机共振增强广义高斯信号的信息传输
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288631
Liyan Xu, F. Duan, Yuhao Ren, D. Abbott
{"title":"Enhanced information transmission with generalized Gaussian signal via suprathreshold stochastic resonance","authors":"Liyan Xu, F. Duan, Yuhao Ren, D. Abbott","doi":"10.1109/ICNF.2015.7288631","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288631","url":null,"abstract":"We investigate the noise-enhanced information transmission with generalized Gaussian signal via the measure of mutual information, in context of suprathreshold stochastic resonance (SSR). The effects of the noise intensity and the exponent parameter of the input signal on mutual information are discussed. It is shown that the qualitative behavior of SSR does not depend on the actual signal and noise distribution. However, it is found that the exponent parameter of the generalized Gaussian signal distribution has a crucial effect on the position or the maximum value of the mutual information.","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125145096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hot-electron noise and energy relaxation in wurtzite ZnO 纤锌矿ZnO中的热电子噪声和能量弛豫
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288567
E. Šermukšnis, J. Liberis, A. Matulionis, M. Toporkov, V. Avrutin, U. Ozgur, H. Morkoç
{"title":"Hot-electron noise and energy relaxation in wurtzite ZnO","authors":"E. Šermukšnis, J. Liberis, A. Matulionis, M. Toporkov, V. Avrutin, U. Ozgur, H. Morkoç","doi":"10.1109/ICNF.2015.7288567","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288567","url":null,"abstract":"Hot-electron noise measurements at a 38.5 GHz frequency were used for extraction of hot-electron energy relaxation time in a ZnO/Mg0.38Zn0.62O/ZnO channel with a two-dimensional electron gas (2DEG). The relaxation time of ~55 fs was obtained at a 2DEG density of ~ 5.5 × 1012 cm-2. The ultrafast relaxation took place in the vicinity of LO-phonon- plasmon resonance. The results suggest that the power dissipation is enhanced by plasmons. The results are in good agreement with those reported for GaN and InGaAs 2DEG channels and doped ZnO films.","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114619482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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