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2015 International Conference on Noise and Fluctuations (ICNF)最新文献

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Terahertz rectification by plasmons and hot carriers in gated 2D electron gases 等离子体和热载流子在门控二维电子气体中的太赫兹整流
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288628
A. Lisauskas, M. Bauer, A. Ramer, K. Ikamas, J. Matukas, S. Chevtchenko, W. Heinrich, V. Krozer, H. Roskos
{"title":"Terahertz rectification by plasmons and hot carriers in gated 2D electron gases","authors":"A. Lisauskas, M. Bauer, A. Ramer, K. Ikamas, J. Matukas, S. Chevtchenko, W. Heinrich, V. Krozer, H. Roskos","doi":"10.1109/ICNF.2015.7288628","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288628","url":null,"abstract":"Here we discuss on detection using antenna-coupled field effect transistors. We show, that gate-to-channel separation plays strong role for the dispersion of plasmons excited within the channel changing from gated 2D to ungated 2D plasmon. This change also strongly affects the impedance and the efficiency of rectification. We present experimental data which clearly indicates on with plasmonic rectification competing physical phenomenon. There are strong indications, that this additional signal originates from the inhomogeneous heating of charge carriers i.e., diffusion of “warm” electrons.","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"16 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122367135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Low frequency noise temperature measurements in SiGe:C heterojunction bipolar transistors SiGe:C异质结双极晶体管的低频噪声温度测量
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288603
M. Seif, F. Pascal, B. Sagnes, A. Hoffmann, S. Haendler, P. Chevalier, D. Gloria
{"title":"Low frequency noise temperature measurements in SiGe:C heterojunction bipolar transistors","authors":"M. Seif, F. Pascal, B. Sagnes, A. Hoffmann, S. Haendler, P. Chevalier, D. Gloria","doi":"10.1109/ICNF.2015.7288603","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288603","url":null,"abstract":"In this work, we present LFNoise measurements versus temperature (120 K-295 K) in SiGe:C HBTs issued from a 0.13 μm BiCMOS technology supplied by STMicroelectronics. For this temperature range (120 K-295 K) on TO box mounted transistors are used. The base current spectral density, SIB, is directly measured using a low noise current amplifier base setup measurement. All the tested transistors showed steady 1/f noise level for temperatures higher than 160 K. Below 220-240 K, generation-recombination (g-r) components appeared and increased more and more with the decrease of the temperature. Concerning the g-r components, two behaviors were observed at very low temperature. It must be noticed that, for the tested transistors, no RTS signature was observed in the time domain, except at very low temperature where a very small RTS amplitude was observed for a few transistors.","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122233482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low-frequency noise study of Ge p-MOSFETs with HfO2/Al2O3/GeOx gate stack HfO2/Al2O3/GeOx栅极堆叠的Ge p- mosfet低频噪声研究
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288550
W. Fang, J. Luo, C. Zhao, E. Simoen, H. Arimura, J. Mitard, A. Thean, C. Claeys
{"title":"Low-frequency noise study of Ge p-MOSFETs with HfO2/Al2O3/GeOx gate stack","authors":"W. Fang, J. Luo, C. Zhao, E. Simoen, H. Arimura, J. Mitard, A. Thean, C. Claeys","doi":"10.1109/ICNF.2015.7288550","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288550","url":null,"abstract":"The low-frequency (LF) Noise of Ge planar pMOSFETs passivated with GeO<sub>x</sub> interfacial layer, followed by a post-Al<sub>2</sub>O<sub>3</sub>-deposition plasma treatment and fabricated in Ge-on-Si substrates, was analysed in this study. While interface state density values comparable with mid-gap Si/SiO<sub>2</sub> can be achieved it is also important to study the density of border traps in the gate stack by LF noise. It is shown that for the Ge pMOSFETs predominantly 1/f<sup>γ</sup> noise (γ ~1) has been observed. From an analysis of the dependence of the normalized drain current noise PSD or the input-referred voltage noise PSD (S<sub>VG</sub>) it can be concluded that for not too high gate voltages number fluctuations (V<sub>G</sub>~V<sub>T</sub>) and correlated mobility fluctuations (V<sub>G</sub>>V<sub>T</sub>) are causing the flicker noise. From a plot of Svg<sup>1</sup>/<sup>2</sup> versus I<sub>D</sub>/g<sub>m</sub> one can derive the density of border traps (N<sub>bt</sub>) and the scattering coefficient (α<sub>SC</sub>).","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130698964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low frequency noise characteristics of BaTiO3-NiFe2O4 composites at phase transition BaTiO3-NiFe2O4复合材料相变低频噪声特性
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288587
S. Pralgauskaitė, J. Matukas, R. Grigalaitis, J. Banys, I. Zamaraite, M. M. Vitajovic Petrovic, J. Bobić, B. Stojanovic
{"title":"Low frequency noise characteristics of BaTiO3-NiFe2O4 composites at phase transition","authors":"S. Pralgauskaitė, J. Matukas, R. Grigalaitis, J. Banys, I. Zamaraite, M. M. Vitajovic Petrovic, J. Bobić, B. Stojanovic","doi":"10.1109/ICNF.2015.7288587","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288587","url":null,"abstract":"In this work we present detailed investigation of low frequency noise characteristics of BaTiO3-NiFe2O4 ceramic composites of different percentage of NiFe2O4. At the particular temperatures (that gets under the broad maximum of dielectric permittivity observed around 300 K) very intensive few separate peaks of random telegraph noise signal were observed. It shows that phase transition in the investigated materials goes through separate stages instead of the smeared out one. Characteristic times of the physical processes during the phase transition are close to one millisecond, and activation energy is around (0,34-0,49) eV.","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133794474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Micro-perforated panel sound absorbers with an array of partitioned cavities of different dimensions 具有不同尺寸的分隔腔阵列的微穿孔板吸声器
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288540
Wencheng Guo, Hequn Min
{"title":"Micro-perforated panel sound absorbers with an array of partitioned cavities of different dimensions","authors":"Wencheng Guo, Hequn Min","doi":"10.1109/ICNF.2015.7288540","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288540","url":null,"abstract":"This paper presents improved compound micro perforated panel (MPP) sound absorber architectures with broader absorption frequency bands compared with single MPP absorber. The absorber is followed the design of quadratic residue diffuser (QRD) that consists of an array of parallel-arranged MPP sub-absorbers with different cavity widths and depths, where it was shown that different local resonances are apparent and dominates. In this paper, an analytical method is proposed to look into the mechanism of the absorber architecture design and is validated through simulations based on a finite element procedure. Secondly, the acoustic properties from different MPP absorber dimension sets are investigated through simulations with the proposed theoretical method. Results show that the normal incidence sound absorption coefficients of the modified QRD-backed MPP absorber can higher than about 0.5 over the frequencies from 370 to 2500 Hz.","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114911127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Avalanche noise diodes: A compact circuit model compatible with advanced CAD tools 雪崩噪声二极管:一个紧凑的电路模型兼容先进的CAD工具
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288564
F. Alimenti, G. Tasselli, C. Botteron, P. Farine, C. Enz
{"title":"Avalanche noise diodes: A compact circuit model compatible with advanced CAD tools","authors":"F. Alimenti, G. Tasselli, C. Botteron, P. Farine, C. Enz","doi":"10.1109/ICNF.2015.7288564","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288564","url":null,"abstract":"This paper proposes, for the first time, a compact model for avalanche noise diodes that can easily be inserted in advanced CAD tools. The model is based on the theory of the Read type microwave avalanche diodes. It fully accounts for the electronic tuning of the avalanche frequency with the square root of the diode biasing current and is scalable with the device area. The equivalent circuit has been written for ADS of Keysight Technologies and is verified against published experiments. The modeled input impedance is within 20% of the measured one in the whole frequency band from DC to 40 GHz. Futhermore, the Excess Noise Ratio (ENR) of the diode can be predicted as a funtion of the avalanche current and is in good agreement with experiments. The developed model is useful for the simulation and the design of calibration circuits adopted by microwave radiometers, radio astronomy receivers and high reliability wireless apparatuses.","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114914318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
1/f Noise model for PNP bipolar junction transistors based on radiation effect 1/f基于辐射效应的PNP双极晶体管噪声模型
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288618
Qifeng Zhao, Y. Zhuang, J. Bao, Wei Hu
{"title":"1/f Noise model for PNP bipolar junction transistors based on radiation effect","authors":"Qifeng Zhao, Y. Zhuang, J. Bao, Wei Hu","doi":"10.1109/ICNF.2015.7288618","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288618","url":null,"abstract":"It is found that ionizing-radiation can lead to 1/f noise degradations in PNP bipolar junction transistors. In this paper, it is suggested that the surface of the space charge region is the main source of the base surface 1/f noise. A model is developed which identifies the parameters and describes their interactive contribution to the base surface recombination current at the surface of the space charge region. Based on the theory of carrier number fluctuation and the model of base recombination surface current, a 1/f noise model is developed. This model suggests that the 1/f noise degradations are the result of accumulation of oxide-trapped charges and interface states. The radiations were performed in a Co60 source at a dose rate of 0.1Gy(Si)/s up to a total dose of 700Gy(Si). The model can explain well the experimental results.","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129949815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1/f- and random telegraph noise of thermoelectric CoSb3 skutterudite thin films 热电CoSb3方钨矿薄膜的1/f-和随机电报噪声
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288617
Martin Lonsky, S. Heinz, J. Muller, M. Daniel, M. Albrecht
{"title":"1/f- and random telegraph noise of thermoelectric CoSb3 skutterudite thin films","authors":"Martin Lonsky, S. Heinz, J. Muller, M. Daniel, M. Albrecht","doi":"10.1109/ICNF.2015.7288617","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288617","url":null,"abstract":"We present resistance, Hall effect and fluctuation spectroscopy measurements on thermoelectric CoSb3 skutterudite thin films in a broad temperature range. Mott variable range hopping is discussed as the dominating transport process at low temperatures. Noise measurements provide further insight into the electronic transport properties. While 1/f-like noise dominates over nearly the entire temperature range, thermally-activated Lorentzian-type spectra are observed in a narrow temperature region around 150 K. Characteristic values of the activation energy are determined to be of the same order of magnitude as the energy gap of CoSb3. We suggest excitations of defect states between valence and conduction band to be the underlying process for the observed noise behavior and discuss the possible exchange of electrons between donor traps and the rest of the conducting media.","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"185 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132035348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Statistical modeling of low-frequency noise in MOSFETs mosfet中低频噪声的统计建模
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288611
G. Wirth, R. da Silva
{"title":"Statistical modeling of low-frequency noise in MOSFETs","authors":"G. Wirth, R. da Silva","doi":"10.1109/ICNF.2015.7288611","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288611","url":null,"abstract":"The low-frequency noise in deep sub-micron MOSFETs is studied, with emphasis on statistical modeling. A simple and compact modeling approach, based on the error propagation formulation is presented. The physics-related parameters which cause statistical fluctuations in noise performance between devices are detailed. The model is compared to experimental data, and the limitations of the modeling approach are discussed.","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122198239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficiency of gas detection algorithms using fluctuation enhanced sensing 基于波动增强感知的气体检测算法的效率
2015 International Conference on Noise and Fluctuations (ICNF) Pub Date : 2015-06-02 DOI: 10.1109/ICNF.2015.7288621
L. Lentka, J. Smulko, R. Ionescu
{"title":"Efficiency of gas detection algorithms using fluctuation enhanced sensing","authors":"L. Lentka, J. Smulko, R. Ionescu","doi":"10.1109/ICNF.2015.7288621","DOIUrl":"https://doi.org/10.1109/ICNF.2015.7288621","url":null,"abstract":"Efficiency of various gas detection algorithms by applying fluctuation enhanced sensing method was discussed. We have analyzed resistance noise observed in resistive WO3-nanowires gas sensing layers. Power spectral densities of the recorded noise were used as the input data vectors for two algorithms: the principal component analysis (PCA) and the support vector machine (SVM). The data were used to determine gas concentration by regression methods. Additionally, the SVM algorithm used the slope of 1/f noise estimated for consecutive low frequency bands only to reduce the volume of computation by limiting the input data vector size. The results show that the SVM method gives the best results when the input vector is a power spectral density.","PeriodicalId":136138,"journal":{"name":"2015 International Conference on Noise and Fluctuations (ICNF)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121813362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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