2013 IEEE Workshop on Microelectronics and Electron Devices (WMED)最新文献_第2页

Three-dimensional FinFET simulation using the FDTD method 用时域有限差分法模拟三维FinFET

2013 IEEE Workshop on Microelectronics and Electron Devices (WMED) Pub Date : 2013-04-12 DOI: 10.1109/WMED.2013.6544507

D. Sullivan

引用次数: 0

Thermal processing impact on the integrity of HfO2-based high-k gate dielectrics 热处理对hfo2基高k栅极电介质完整性的影响

2013 IEEE Workshop on Microelectronics and Electron Devices (WMED) Pub Date : 2013-04-12 DOI: 10.1109/WMED.2013.6544505

Xue-feng Lin, W. Morinville, Z. Suo, K. Zhuang, C. Krasinski, D. Markowitz, K. Noehring, Yang Zhou, S. York, H. Yapa, J. Brown, Shifeng Lu

引用次数: 0

Invited talk: Computing beyond the 11nm node: Which devices will we use? 特邀演讲:超越11nm节点的计算:我们将使用哪些设备?

2013 IEEE Workshop on Microelectronics and Electron Devices (WMED) Pub Date : 2013-04-12 DOI: 10.1109/WMED.2013.6544500

W. Haensch

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引用次数: 0

Invited talk: 2.5D and 3D technology advancements for systems 特邀演讲:系统的2.5D和3D技术进展

2013 IEEE Workshop on Microelectronics and Electron Devices (WMED) Pub Date : 2013-04-12 DOI: 10.1109/WMED.2013.6544495

J. Knickerbocker

引用次数: 2

PECVD of GexS1−x films for nano-ionic redox conductive bridge memristive switch memory 用于纳米离子氧化还原导电桥阻开关存储器的GexS1−x薄膜的PECVD

2013 IEEE Workshop on Microelectronics and Electron Devices (WMED) Pub Date : 2013-04-12 DOI: 10.1109/WMED.2013.6544504

M. R. Latif, M. Mitkova, G. Tompa, E. Coleman

引用次数: 1