Advanced Optical Materials最新文献

{"title":"Ultra-Dark on-Chip Plasmonic Lattice Lasers for High-Density Integrations","authors":"Menghan Li,&nbsp;Huafeng Ding,&nbsp;Ran Chen,&nbsp;Jianing Chen,&nbsp;Jianjun Chen","doi":"10.1002/adom.71729","DOIUrl":"https://doi.org/10.1002/adom.71729","url":null,"abstract":"<div>\u0000 \u0000 <p>Due to out-of-plane diffraction channels or scattering channels of defects, on-chip micro-lasers always suffer from severe emission of free-space photons. This severely hampers not only the development of ultra-high <i>Q</i> and ultra-dark on-chip micro-lasers but also the high-density integration with other nanophotonic components. Herein, ultra-dark on-chip plasmonic lasers are experimentally realized in high-quality Ag-SiO₂ nanodisk lattices. The out-of-plane diffraction channel is eliminated by using the first-order-feedback mechanism. The losses of the scattering channels are greatly decreased by fabricating high-quality Ag-SiO₂ nanodisk lattices. As a result, an “ultra-dark” plasmonic lattice laser with ultra-high <i>Q</i> is realized at room temperature. Linewidths of as small as Δ<i>λ</i>_FWHM-T ≈ 0.003 nm at visible wavelengths are deconvolution-inferred, and the corresponding <i>Q</i> factor is as high as <i>Q</i> ≈ 2.1 × 10⁵, which is approximately 75 times the largest <i>Q</i> factor in previous plasmonic lattice lasers. The in-plane coupling efficiency of the on-chip plasmonic lasers is approximately 99%, indicating that there is hardly any emission of free-space laser photons. The ratio of laser emission in free space (∼1%) is approximately 20 times lower than that (≥20%) reported in previous works. Based on the “ultra-dark” plasmonic lasers, the high-density integration of multiple components and functions is demonstrated.</p>\u0000 </div>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 36","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149029125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultrasensitive Terahertz Spintronic Modulator for On-Chip Applications","authors":"Avinash Chaurasiya,&nbsp;Ziqi Li,&nbsp;Yingshu Yang,&nbsp;S. N. Piramanayagam,&nbsp;Marco Battiato,&nbsp;Elbert E. M. Chia,&nbsp;Rajdeep Singh Rawat","doi":"10.1002/adom.71738","DOIUrl":"https://doi.org/10.1002/adom.71738","url":null,"abstract":"<div>\u0000 \u0000 <p>Ensuring stability and controlling terahertz spintronic emitters typically involves the application of a relatively strong magnetic field to counter magnetization drift during repeated pumping to regulate the emitted terahertz radiation's direction. However, using a strong magnetic field is practically not relevant for on-chip compact, low-cost ultrawide broadband terahertz opto-spintronic devices. Uniaxial magnetic anisotropic materials provide a potential avenue to stabilize as well as control the ultrafast spin current pulses, at weak magnetic field specifically weaker than the anisotropy field. Here, we report the amplitude modulation as well as polarization switching of the terahertz spin current pulse at magnetic field less than 1 Oe, demonstrating an ultrasensitive spintronic emitter. In comparison to the use of a strong magnetic field, our repeated measurements demonstrate that there is no magnetization drift, rendering the need for a strong magnetic field unnecessary. Our findings establish a uniaxial magnetic anisotropic emitter with ultra-strong modulation as a promising candidate for future efficient ultrafast on-chip opto-spintronic devices.</p>\u0000 </div>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 36","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149029065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An Ultra-Compact Broadband Metalens-Based Structured Light Analyzer","authors":"Junjie Zou,&nbsp;Zihan Mei,&nbsp;Deqian Zheng,&nbsp;Yuhui Hu,&nbsp;Tianzhang Peng,&nbsp;Ming Zhao,&nbsp;Cheng Zhang,&nbsp;Zhenyu Yang","doi":"10.1002/adom.71745","DOIUrl":"https://doi.org/10.1002/adom.71745","url":null,"abstract":"<div>\u0000 \u0000 <p>High-precision real-time characterization of complex spatiotemporal light fields is crucial for super-resolution imaging and high-dimensional information processing. However, existing technologies still face challenges such as limited functionalities, restricted accuracy, and complicated measurement procedures. Here, a broadband metasurface-based structured light analyzer is proposed and experimentally demonstrated. Leveraging a neural network-driven inverse optimization model, the end-to-end inverse design of the metalens is achieved within a continuous geometric parameter space. By enabling comprehensive multi-parameter detection within a monolithic metasurface architecture across the 450–650 nm range, this design offers an ultra-compact form factor suitable for direct on-chip integration with CMOS imaging sensors. Experimental results at 488, 532, and 633 nm reveal full Stokes reconstruction errors below 3%, with a polarization reconstruction accuracy comparable to that of commercial polarimeters. Furthermore, the reconstruction accuracy of the wavefront phase gradient is approximately 3%, supporting real-time wavefront detection with an incident angle of up to 9°. Finally, the dynamic multi-parameter capture of vector light fields featuring complex polarization and phase distributions is successfully demonstrated. This work provides an effective strategy for designing compact light-field detection devices, holding promising potential for applications in structured light detection and joint polarization-phase imaging.</p>\u0000 </div>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 36","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149027760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic Piezophototronic and Bandgap Engineering in a Flexible MoTe2/In2Se3 Heterojunction Photodetector","authors":"Qingyan Deng,&nbsp;Yuting Ye,&nbsp;Jialing Jian,&nbsp;Jianghong Wu,&nbsp;Yinyin Song,&nbsp;Hui Ma,&nbsp;Hongtao Lin,&nbsp;Lan Li","doi":"10.1002/adom.71739","DOIUrl":"https://doi.org/10.1002/adom.71739","url":null,"abstract":"<div>\u0000 \u0000 <p>Two-dimensional materials provide a versatile platform for flexible optoelectronics. However, previous strain-engineered flexible photodetectors have generally exhibited a narrow spectral range, with most studies focusing solely on the visible range and lacking broadband response capability. Here, we present a flexible photodetector based on the MoTe₂/In₂Se₃ van der Waals heterojunction, where the piezophototronic effect and strain-induced bandgap modulation are combined to achieve a strain-enhanced broadband response from the visible to the short-wave infrared. Under controlled uniaxial tensile strain, the induced piezo-potential within the heterojunction significantly enhances the built-in electric field at the interface, while the strain-reduced bandgap of MoTe₂ synergistically promotes photocarrier generation and separation. Consequently, the device exhibits a broadband photoresponse and pronounced responsivity enhancements of 191% at 638 nm and 260% at 1310 nm under optimized tensile strain, along with an ultralow dark current of 9.4 pA. These results demonstrate an effective strain-modulated photon-to-electron transition in flexible van der Waals heterostructures and offer a viable strategy for designing high-performance flexible optoelectronic devices.</p>\u0000 </div>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 36","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149028983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thin Phophorus-Oxide-Assisted Electrically Pumped Mid-Infrared Light Emission in a Twisted Black Phosphorus Structure with Polarization Switching","authors":"Bolin Gong,&nbsp;Meng Ge,&nbsp;Yan Luo,&nbsp;Xiangxi Zhu,&nbsp;Chao Zhu,&nbsp;Gang Ouyang,&nbsp;Xiaolong Chen","doi":"10.1002/adom.71736","DOIUrl":"https://doi.org/10.1002/adom.71736","url":null,"abstract":"<div>\u0000 \u0000 <p>Efficient and polarization-switchable on-chip mid-infrared light sources are desirable for portable and miniaturized systems for applications in gas sensing, free-space optical communications, and imaging. The polarization-switchable function can offer a new information dimension for signal processing. Black phosphorus (BP), with perfect linear dichroism, high internal quantum efficiency, and a narrow bandgap of 0.3 eV, is a promising candidate for polarization-switchable on-chip mid-infrared light sources. Here, we demonstrate an electrically pumped, robust, and polarization-switchable mid-infrared light emission in a twisted BP structure. Through introducing an oxidized phosphorus interface between the top and bottom BP layers to engineer the energy band alignment and controlling BP crystalline orientations, the mid-infrared emission can be electrically pumped, and light polarization states can be switched between top and bottom BP layers by simply changing the polarity of the applied bias. The phenomenon can be observed in a wide twisted angles up to 90°. Delicate peak external quantum efficiencies of 0.28% and 4.87% are achieved at 300 and 80 K, respectively. Moreover, an optical logic operation strategy based on the polarization-switchable light emission property is demonstrated.</p>\u0000 </div>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 36","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149029064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Elucidating the Impact of Bi3+ Lone Pair on the Optical and Electronic Properties of Phosphonium-Based Halide Semiconductors","authors":"Ali Azmy,&nbsp;Anand P. Tiwari,&nbsp;Anamika Mishra,&nbsp;Andrea Woods,&nbsp;Kamal E. S. Nassar,&nbsp;Ioannis N. Gkikas,&nbsp;Amanda R. Sharrer,&nbsp;Ioannis Spanopoulos","doi":"10.1002/adom.71536","DOIUrl":"https://doi.org/10.1002/adom.71536","url":null,"abstract":"<div>\u0000 \u0000 <p>Hybrid metal halide semiconductors exhibit intriguing photophysical properties that are attributed to strong electron-phonon coupling mediated by lattice deformations. Although extensive research has established a relatively clear picture of the effects of both intra-octahedral and inter-octahedral distortions on the optical and electronic behavior of 3D and 2D metal halide materials, there is still a lack of distortion descriptors to quantify octahedral distortions in edge-sharing 0D dimers (oligomers). Here, we provide new structure distortion descriptors to accurately quantify the off-centering of the metal cation from the geometric center of the octahedron and the twist angle between face-sharing octahedra. As a testing platform, we synthesized two new 0D metal halides based on [Bi₂I₉]³⁻ dimers using phosphonium organic cations, with general formula (L)₃Bi₂I₉ (L = butyl(trimethyl)phosphonium bromide (P5-P), benzyl(triethyl)phosphonium bromide (P3-P)). We correlated the inter-octahedral twisting within the metal halide dimers with their photoluminescence at RT and 80 K, while their inherent water stability enabled the evaluation of their redox and sensing properties toward persistent organic pollutants. The assembly of flexible, wearable electrodes demonstrated the simultaneous determination of per- and polyfluoroalkyl substances (PFAS) and polychlorinated biphenyls (PCBs), underscoring their promise for portable field applications.</p>\u0000 </div>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 36","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149029139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Elucidating the Impact of Bi3+ Lone Pair on the Optical and Electronic Properties of Phosphonium-Based Halide Semiconductors (Advanced Optical Materials 36/2026)","authors":"Ali Azmy,&nbsp;Anand P. Tiwari,&nbsp;Anamika Mishra,&nbsp;Andrea Woods,&nbsp;Kamal E. S. Nassar,&nbsp;Ioannis N. Gkikas,&nbsp;Amanda R. Sharrer,&nbsp;Ioannis Spanopoulos","doi":"10.1002/adom.71679","DOIUrl":"https://doi.org/10.1002/adom.71679","url":null,"abstract":"<p><b>Water Stability and PFAS Sensing</b></p><p>The cover showcases the wearable, portable electrochemical sensor for detecting forever chemicals, such as PFAS and PCBs, in tap water samples. The sensor comprises the new water-stable phosphonium-based Bi(III) metal halide semiconductors with prominent optical and electronic properties, rendering them suitable for a series of portable optoelectronic applications. More details can be found in the Research Article by Ioannis Spanopoulos and co-workers (DOI: 10.1002/adom.71536).\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 36","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adom.71679","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149029168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Triplet State Engineering in Regioisomeric Cocrystals Enabling Dual Phosphorescence and Efficient Thermally Activated Delayed Fluorescence","authors":"Sandhya Rani Nayak,&nbsp;Madhusudan Dutta,&nbsp;Vishnu Mishra,&nbsp;Rishukumar Panday,&nbsp;Partha Hazra","doi":"10.1002/adom.71698","DOIUrl":"https://doi.org/10.1002/adom.71698","url":null,"abstract":"<div>\u0000 \u0000 <p>Organic donor–acceptor cocrystals have emerged as a versatile class of functional materials for modulating excited-state processes through supramolecular assembly. In this work, a series of regioisomeric D-A cocrystals (oDCB, mDCB, and pDCB) exhibiting both thermally activated delayed fluorescence (TADF) and dual phosphorescence from the ³CT and ³LE states are reported. Structural variations of acceptors enable systematic control over intermolecular charge transfer interactions, resulting in tunable singlet-triplet energy gaps (ΔE_ST) and hence reverse intersystem crossing (RISC) rates. The oDCB cocrystal, owing to the smallest ΔE_ST, exhibits the fastest RISC rate (1.29 × 10⁵ s⁻¹), whereas pDCB, with the largest ΔE_ST (0.23 eV), displays the longest excited state lifetime (2.12 ms) and the slowest RISC rate (6.97 × 10² s⁻¹). At 77 K, all the cocrystals demonstrate dual phosphorescence from ³CT and ³LE states, assisted by vibronic coupling. The energy landscape of the triplet state of the cocrystals depends on the triplet energy of the parent components, and hence, determines the extent of vibronic coupling between ³LE and ³CT. These results elucidate how the interplay between the ³CT and ³LE states controls TADF and dual phosphorescence, underscoring that cocrystal design is an effective way to tune triplet state dynamics in organic cocrystals.</p>\u0000 </div>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 36","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149029177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Suppressing Ion Migration in Metal Halide Perovskite via High-Valent Rare-Earth Ions Doping Induced Phase Pinning","authors":"Junyu He,&nbsp;Weihao Zheng,&nbsp;Jun Luo,&nbsp;Wanru Kong,&nbsp;Yang Li,&nbsp;Tongqing Sun,&nbsp;Anshi Chu,&nbsp;Min Li,&nbsp;Xiujuan Zhuang,&nbsp;Shulin Chen","doi":"10.1002/adom.71750","DOIUrl":"https://doi.org/10.1002/adom.71750","url":null,"abstract":"<div>\u0000 \u0000 <p>Mixed metal halide perovskites (MHPs) enable multi-band emission for white-light applications but suffer from instability due to non-radiative recombination and rapid halogen ion migration. Herein, we propose a high-valent cation-doped phase pinning strategy to induce a stable planar heterojunction in all-inorganic CsPb(Br_xI_1-x)₃ perovskite microplates. Among a series of selectable cations, Er³⁺ proves the most significant inhibitory effect on ion migration. Photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy reveal that the Er-doped CsPb(Br_xI_1-x)₃ microplate exhibits stable dual-wavelength emission characteristics, accompanied by significantly enhanced PL intensity and prolonged carrier lifetime. The ion migration rate and radiation recombination efficiency were further tuned by adjusting Er concentration and halogen ratios. The finding reveals a viable approach for inhibiting ion migration through the doping of trivalent B-site cations, providing a basis for optoelectronic devices with multiple emission channels.</p>\u0000 </div>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 36","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149029186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Helium Ion-Induced Degradation Mechanisms in Optical Coatings for Space Applications","authors":"Alain J. Corso,&nbsp;Marta Padovani,&nbsp;René Hübner,&nbsp;Ulrich Kentsch,&nbsp;Andrea Meneguzzo,&nbsp;Maria G. Pelizzo","doi":"10.1002/adom.71743","DOIUrl":"https://doi.org/10.1002/adom.71743","url":null,"abstract":"&lt;p&gt;Low-energy helium ions represent a significant source of degradation for optical coatings operating in space environments, especially in Geostationary Earth Orbit (GEO). Despite their relevance, the mechanisms responsible for &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;msup&gt;\u0000 &lt;mi&gt;He&lt;/mi&gt;\u0000 &lt;mo&gt;+&lt;/mo&gt;\u0000 &lt;/msup&gt;\u0000 &lt;annotation&gt;${rm He}^+$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;-induced degradation remain largely unexplored. This work systematically investigates the effects of &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;msup&gt;\u0000 &lt;mi&gt;He&lt;/mi&gt;\u0000 &lt;mo&gt;+&lt;/mo&gt;\u0000 &lt;/msup&gt;\u0000 &lt;annotation&gt;${rm He}^+$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; irradiation on metallic and dielectric thin films for space optical applications, including single- and bi-layer coatings based on Al, Au, Ag, &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;SiO&lt;/mi&gt;\u0000 &lt;mn&gt;2&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;annotation&gt;${rm SiO}_2$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;, &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;TiO&lt;/mi&gt;\u0000 &lt;mn&gt;2&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;annotation&gt;${rm TiO}_2$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;, and &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;ZrO&lt;/mi&gt;\u0000 &lt;mn&gt;2&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;annotation&gt;${rm ZrO}_2$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;. More than 150 samples were irradiated at different fluences, fluxes, and ion energies (4, 16, and 100 keV) under conditions covering both 15-year GEO baseline fluences and intentionally above such levels. The selected energies allow a comparative investigation of both ion penetration effects in single layers and interface-stressing mechanisms in multilayer structures. Radiation-induced modifications were characterized through optical and structural analyzes, including reflectance/transmittance measurements, Atomic Force Microscopy (AFM), and Transmission Electron Microscopy (TEM). The results reveal distinct degradation mechanisms associated with &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;msup&gt;\u0000 &lt;mi&gt;He&lt;/mi&gt;\u0000 &lt;mo&gt;+&lt;/mo&gt;\u0000 &lt;/msup&gt;\u0000 &lt;annotation&gt;${rm He}^+$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; implantation and interface damage, highlighting effects that differ significantly from those typically observed under proton irradiation. In addition, empirical reference fluences without observable optical degradation were determined for the investigated coating systems, providing an empirical baseline for assessing coating stability in sp","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"14 36","pages":""},"PeriodicalIF":7.2,"publicationDate":"2026-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adom.71743","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149029183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}