Advanced Optical Materials最新文献_第5页

Multiscale Simulations Reveal the Mechanism of Host-Induced Room-Temperature Phosphorescence in Multiple Resonance Emitters 多尺度模拟揭示了宿主在多共振发射体中诱导室温磷光的机制

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-11 DOI: 10.1002/adom.202500749

Zhenyi Lin, Yuehui Lin, Yu Shen, Xiaokang Yao, Kang Shen, Zhongfu An, Huili Ma

{"title":"Multiscale Simulations Reveal the Mechanism of Host-Induced Room-Temperature Phosphorescence in Multiple Resonance Emitters","authors":"Zhenyi Lin, Yuehui Lin, Yu Shen, Xiaokang Yao, Kang Shen, Zhongfu An, Huili Ma","doi":"10.1002/adom.202500749","DOIUrl":"10.1002/adom.202500749","url":null,"abstract":"Multiple resonance (MR) emitters typically exhibit narrowband thermally activated delayed fluorescence (TADF), yet their recently discovered host-assisted room-temperature phosphorescence (RTP) remains unclear. Herein, the origin of this luminescence switching is elucidated through a combined theoretical and experimental study of a prototypical MR emitter, quinolino[3,2,1-de]acridine-5,9-dione (QAO). While QAO displays TADF in 9,9′-(1,3-phenyl)di-9H-carbazole (mCP) film but switches to RTP in benzophenone (BP) crystal. Multiscale simulations reveal that BP-induced conformational distortion triggers a conversion from S1(π, π*) to S1(n, π*). This change i) introduces a dipole-forbidden transition, leading to >300-fold reduction in radiative decay rate; ii) and largely enhances the spin–orbit coupling of S1 → T1, accelerating the intersystem crossing (ISC) rate by five orders of magnitude, with the aid of enhanced vibronic coupling. Additionally, the singlet-triplet energy gap shows a tiny change with values of ≈0.2 eV, supporting the reverse ISC for triplet exciton harvesting. As a result, the bright TADF of QAO in mCP film is converted to RTP in BP crystal, with theoretical predictions showing excellent agreement with experimental emission spectra and RTP lifetimes. These findings provide fundamental insights into the molecular design of high-performance MR-based RTP materials, paving the way for next-generation organic optoelectronic applications.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 24","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144897628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Single-Phase High-Color-Rendering NaAlSiO4:Pb2+/Tb3+/Eu3+ Phosphor for White Light-Emitting Diodes 白光二极管用单相高显色NaAlSiO4:Pb2+/Tb3+/Eu3+荧光粉

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-11 DOI: 10.1002/adom.202502170

Jun-He Zhou, Ning Wang, Yong-Jia Hu, Ze-Yu Wang, Yang Wei, Hui Wang, Chao Sun, Hong-Shun Sun, Yu-Long Li, Yuan Cai, Yu-Jia Ji, Ling-Ling Ma, Yan-Qing Lu

{"title":"A Single-Phase High-Color-Rendering NaAlSiO4:Pb2+/Tb3+/Eu3+ Phosphor for White Light-Emitting Diodes","authors":"Jun-He Zhou, Ning Wang, Yong-Jia Hu, Ze-Yu Wang, Yang Wei, Hui Wang, Chao Sun, Hong-Shun Sun, Yu-Long Li, Yuan Cai, Yu-Jia Ji, Ling-Ling Ma, Yan-Qing Lu","doi":"10.1002/adom.202502170","DOIUrl":"https://doi.org/10.1002/adom.202502170","url":null,"abstract":"The development of single-phase broadband white-emitting phosphors has emerged as a critical research frontier for advanced solid-state lighting technologies. Herein, the successful synthesis of NaAlSiO4:Pb2+/Tb3+/Eu3+ phosphors is reported through high-temperature solid-state reactions, achieving tunable multicolor emission and full-spectrum white light via rational energy transfer (ET) engineering. The strategic co-doping scheme enables dual ET pathways—Pb2+→Tb3+ (dipole–dipole) and Pb2+→Eu3+ (dipole–dipole)—mediated by optimal energy level alignment. The optimized NaAlSiO4:0.01%Pb2+/0.01%Tb3+/0.005%Eu3+ phosphor demonstrates white emission under 271 nm excitation, integrating blue (400 nm, Pb2+), green (487/551 nm, Tb3+), and red (592-704 nm, Eu3+) spectral components. Fabricated white LED devices exhibit superior photometric performance with a color rendering index (CRI) of 93.8 and correlated color temperature (CCT) of 4450 K, representing 30% CRI enhancement and 32% CCT reduction compared to commercial YAG:Ce3⁺. This work demonstrates the great potential of NaAlSiO4:Pb2+/Tb3+/Eu3+ phosphors for use in WLED applications and paves the way for designing high-performance single-matrix phosphors through controlled multi-dopant energy transfer systems.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 28","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145196700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Strong and Engineerable Optical Anisotropy in Easily Integrable Epitaxial SrO(SrTiO3)N Ruddlesden–Popper Thin Layers 易积外延SrO(SrTiO3)N rudlesden - popper薄层的强且可工程的光学各向异性

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-11 DOI: 10.1002/adom.202501049

Mohamed Oussama Bounab, Clarisse Furgeaud, Sébastien Cueff, Lotfi Berguiga, Romain Bachelet, Mohamed Bouras, Laurent Pedesseau, Jacky Even, Ludovic Largeau, Guillaume Saint-Girons

{"title":"Strong and Engineerable Optical Anisotropy in Easily Integrable Epitaxial SrO(SrTiO3)N Ruddlesden–Popper Thin Layers","authors":"Mohamed Oussama Bounab, Clarisse Furgeaud, Sébastien Cueff, Lotfi Berguiga, Romain Bachelet, Mohamed Bouras, Laurent Pedesseau, Jacky Even, Ludovic Largeau, Guillaume Saint-Girons","doi":"10.1002/adom.202501049","DOIUrl":"https://doi.org/10.1002/adom.202501049","url":null,"abstract":"Optical anisotropy is a key property for numerous photonic devices. However, bulk anisotropic materials suitable for such applications remain relatively scarse and are often challenging to synthesize as thin films. Additionally, the optical losses as well as the complex structuration of anisotropic metamaterials hinder their integrability in photonic devices. Based on ellipsometry measurements coupled with reflectance, it is demonstrated here that Ruddlesden-Popper (RP) SrO(SrTiO3)N phases (STO-RPN), epitaxial thin films composed of a SrTiO3 lattice periodically interrupted by one SrO atomic plane every N unit cells, exhibit pronounced dichroism and birefringence over a broad spectral range. Notably, this anisotropy is tunable by adjusting the RP order N. In contrast to most other anisotropic materials reported in the literature, STO-RPN thin layers can be fabricated using industry-standard growth processes. As it can be epitaxially grown on Si and GaAs using SrTiO3 templates, the work paves the way for their compact integration on these photonic platforms.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 28","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145196706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spatially Deterministic Integration of hBN Single-Photon Emitters on SiN Waveguides Via Femtosecond Laser Processing 利用飞秒激光处理技术在SiN波导上实现hBN单光子发射器的空间确定性集成

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-11 DOI: 10.1002/adom.202501231

Daiki Yamashita, Masaki Yumoto, Aiko Narazaki, Makoto Okano

{"title":"Spatially Deterministic Integration of hBN Single-Photon Emitters on SiN Waveguides Via Femtosecond Laser Processing","authors":"Daiki Yamashita, Masaki Yumoto, Aiko Narazaki, Makoto Okano","doi":"10.1002/adom.202501231","DOIUrl":"10.1002/adom.202501231","url":null,"abstract":"A post-fabrication method is demonstrated that enables spatially deterministic integration of hexagonal boron nitride (hBN) single-photon emitters onto silicon nitride (SiN) waveguides. Mechanically exfoliated hBN flakes are dry-transferred onto pre-fabricated SiN waveguides, and localized femtosecond laser irradiation is employed to induce defects with sub-microscale spatial precision. Confocal photoluminescence mapping reveals multiple laser-written bright defects, among which one emitter exhibits narrow spectral linewidth and polarization dependence characteristic of a dipole emitter. The emitter exhibits high brightness and temporal stability, and second-order photon correlation measurements confirm its single-photon nature. Furthermore, on-chip excitation via the SiN waveguide is successfully achieved, demonstrating the compatibility of the approach with mature photonic platform technologies. This deterministic integration technique offers a scalable pathway for incorporating quantum emitters into photonic circuits, paving the way for the development of quantum information processing and communication systems with 2D material hybrid photonic devices.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 27","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adom.202501231","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145110670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Micro-/Nanomaterials for Surface-Enhanced Optical Biosensing 用于表面增强光学生物传感的微/纳米材料

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-11 DOI: 10.1002/adom.202501098

Jie Zhao, Xinyi Liu, Xujiang Yu, Wanwan Li

{"title":"Micro-/Nanomaterials for Surface-Enhanced Optical Biosensing","authors":"Jie Zhao, Xinyi Liu, Xujiang Yu, Wanwan Li","doi":"10.1002/adom.202501098","DOIUrl":"https://doi.org/10.1002/adom.202501098","url":null,"abstract":"Optical biosensors are pivotal for their stability and high throughput, but their sensitivity often hinges on optical signal strength. Thanks to the combination of plasmonic nanostructures and spectroscopy, surface-enhanced spectroscopy (SES) has emerged as a powerful tool for identifying and characterizing trace molecular species with ultrahigh sensitivity. This technique holds broad application prospects in the field of optical biosensors, including surface-enhanced fluorescence (SEF), surface-enhanced Raman scattering (SERS), and surface-enhanced infrared absorption (SEIRA), which significantly improve the interaction intensity between photons and materials. This review elaborates on SES from the perspective of the combined system of SEF, SERS, and SEIRA, and summarizes the mechanism, micro-/nanomaterials structural design principles, and applications. A comprehensive review of the mechanisms from electromagnetic and chemical perspectives is provided. Reasonable micro/nanomaterial design strategies are then discussed to customize hot spots for different platforms with optimal enhancement. The review aims to emphasize the significant impact of micro-/nanomaterials in surface-enhanced optical biosensing. Besides, the progress of surface-enhanced biosensors around immunoassays, DNA/RNA, and other biomolecules is summarized. Finally, the challenges and future directions of the field are outlined.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 28","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145196698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Boron- and Oxygen-Doped π-Extended Nanographene: An Emitting Material for Organic Light-Emitting Diodes 硼氧掺杂π扩展纳米石墨烯：有机发光二极管的发光材料

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-11 DOI: 10.1002/adom.202500848

Mohan Gandhi Devulapally, Kiun Cheong, Jangho Moon, Rajkumar Nagavath, Jae Hee Lee, Jun Yeob Lee, Wan Pyo Hong

{"title":"Boron- and Oxygen-Doped π-Extended Nanographene: An Emitting Material for Organic Light-Emitting Diodes","authors":"Mohan Gandhi Devulapally, Kiun Cheong, Jangho Moon, Rajkumar Nagavath, Jae Hee Lee, Jun Yeob Lee, Wan Pyo Hong","doi":"10.1002/adom.202500848","DOIUrl":"https://doi.org/10.1002/adom.202500848","url":null,"abstract":"Expanding the molecular framework of hexabenzo[a,c,fg,j,l,op]tetracene (HBT) via heteroatom incorporation and topological edge control is crucial for achieving desired photophysical properties. However, synthesizing heteroatom-doped HBT derivatives remains highly challenging, and effective molecular design strategies have not yet been established. Herein, the synthesis of boron (B)- and oxygen (O)-doped expanded HBT (BO-HBT) is carried using a sequential Scholl cyclization strategy. This work is the first example of a B/O-expanded HBT molecule, demonstrating that heteroatom incorporation and peripheral alkyl group modifications enable accurate tuning of its electronic structure and photonic properties. Consequently, BO-HBT exhibits a reduced bandgap (2.55 eV), robust electrochemical stability, a horizontal emitting dipole orientation ratio of 88%, and a high photoluminescence quantum yield of 62.8% in toluene. Density functional theory calculations further elucidate its fluorescence mechanism, revealing that all the frontier orbitals of BO-HBT are predominantly localized in the central pyrene and boron-containing parts and the peripheral biphenyl moieties play a minor role. Hence, the redox and photoluminescence properties of BO-HBT closely resemble those of BO-BPP, a structurally related B/O-fused pyrene system. Notably, BO-HBT demonstrated promising performance as an emitting dopant material in organic light-emitting diodes (OLEDs), achieving an external quantum efficiency of up to 6.2% in the pure green visible region and exceeding 10% in hyperfluorescent devices. These results represent the first successful demonstration of an HBT derivative as an emissive dopant in OLEDs and underscore BO-HBT's potential for advanced optoelectronic applications.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 28","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145196707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing Dark Current Suppression in Near-Infrared Organic Photodetectors with Morphology Control and Self-Assembled Monolayers 利用形态学控制和自组装单层膜增强近红外有机光电探测器的暗电流抑制

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-07 DOI: 10.1002/adom.202500362

Wei Fu, Zelong Li, Yifan Ding, Maojie Zhang, Yong Cui, Hong Zhang, Xiaoliang Mo, Rongjun Zhang, Guangzheng Zuo

{"title":"Enhancing Dark Current Suppression in Near-Infrared Organic Photodetectors with Morphology Control and Self-Assembled Monolayers","authors":"Wei Fu, Zelong Li, Yifan Ding, Maojie Zhang, Yong Cui, Hong Zhang, Xiaoliang Mo, Rongjun Zhang, Guangzheng Zuo","doi":"10.1002/adom.202500362","DOIUrl":"https://doi.org/10.1002/adom.202500362","url":null,"abstract":"This study addresses the challenges of high dark current density and low responsivity in near-infrared organic photodetectors (NIR-OPDs) through a synergistic strategy combining morphology control and interface engineering. A thick active layer incorporating solid additives effectively reduces the dark current density while preserving efficient charge transport. Subsequently, molecular interface modification using [2-(9HCarbazol-9-yl)ethyl]phosphonic acid (2PACz) further suppresses the dark current and enhances photoresponsivity. Drift-diffusion modeling, incorporating trap states, reveals that the 2PACz forms a dipole layer at the interface, lowering the injection barrier by ≈0.3 eV and eliminating traps within the device. Together, these strategies reduce the dark current density from the order of 10−5 A cm−2 (control) to the order of 10−8 A cm−2 at −1 V, and enhance the responsivity (R) from 0.50 A W−1(control) to 0.58 A W−1 at 864 nm. The resulting device exhibits a high shot-noise-limited specific detectivity (Dsℎ∗) reaching 9.57 × 1013 Jones, highlighting its exceptional sensitivity. This study demonstrates that combining morphology control with interface engineering effectively overcomes key performance limitations in NIR-OPDs, providing valuable insights for the design of high-performance organic photodetectors.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 28","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145196626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

All-Visible Light-Switchable Thin-Film Transistor 全可见光可切换薄膜晶体管

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-06 DOI: 10.1002/adom.202501408

Taibin Wang, Paolo Samorì, Lili Hou

{"title":"All-Visible Light-Switchable Thin-Film Transistor","authors":"Taibin Wang, Paolo Samorì, Lili Hou","doi":"10.1002/adom.202501408","DOIUrl":"10.1002/adom.202501408","url":null,"abstract":"Stimuli-responsive organic thin-film transistors (TFTs), such as light-switchable TFTs, are key components for multifunctional optoelectronics beyond Moore. However, the modulation of the light-switchable TFTs output developed so far requires the use of ultraviolet (UV) light, despite the latter triggers photooxidation and degradation of the molecular materials and hybrids thereof. Herein, an all-visible light-switchable TFT is reported whose current output can be reversibly interconverted between two different states by non-coherent and low-power (<1 mW cm−2) visible light. The light-sensitive material is assembled by blending CdS quantum dots (QDs) coated by photochromic diarylethene (DAE) molecules with a semiconducting p-type poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno[3,2-b]thiophene)] (DPP-DTT). For the first time, triplet energy transfer (TET) at the organic-inorganic interface between photochromic molecules and QDs is exploited to drive light-switchable TFTs devices, enabling DAEs reversible photoisomerization when exposed to 405 nm and 515 nm visible light. Significantly, the conversion efficiency of DAEs via all-visible-light switching is comparable to that achieved under UV light irradiation, while the light switching fatigue resistance of the devices displayed a radical improvement. The work provides a new pathway to realize all-visible-light activated devices for future design of advanced digital optoelectronics in the context of next-generation data storage technologies and neuromorphic computing.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 27","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145111026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hybrid Elastoplastic Crystal Scintillators for Flexible X-Ray Radiation Imaging 用于柔性x射线辐射成像的混合弹塑性晶体闪烁体

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-05 DOI: 10.1002/adom.202500688

Chuanxin Wei, Amy J. Thompson, Xiangmei Liu, Analia I. Chamorro Orué, Jingfei Ni, Ye Tao, Xuahua Ding, John C. McMurtrie, Man Xu, Jinyi Lin, Jack K. Clegg, Qiang Zhao, Linghai Xie, Wei Huang

引用次数: 0

Enhancing Extremely Low-Frequency Signal-to-Noise Ratio of Diamond Magnetometry via Nonlinear Response 利用非线性响应提高金刚石磁强计极低频信噪比

IF 7.2 2区材料科学

Advanced Optical Materials Pub Date : 2025-08-05 DOI: 10.1002/adom.202501340

Chunlong Li, Bing Chen, Hao Wu, Kangjia Zhen, Jiayu Xu, Zhifei Yu, Jianpei Geng, Jingwei Fan, Renfei Zheng, Fei Xue

{"title":"Enhancing Extremely Low-Frequency Signal-to-Noise Ratio of Diamond Magnetometry via Nonlinear Response","authors":"Chunlong Li, Bing Chen, Hao Wu, Kangjia Zhen, Jiayu Xu, Zhifei Yu, Jianpei Geng, Jingwei Fan, Renfei Zheng, Fei Xue","doi":"10.1002/adom.202501340","DOIUrl":"10.1002/adom.202501340","url":null,"abstract":"Extremely low-frequency (below 10 Hz) current-induced magnetic field detection has significant applications in high-voltage DC systems, lithium-ion battery diagnostics, and industrial process monitoring. Nitrogen-vacancy (NV) ensembles magnetometry typically employs flux concentrators to enhance magnetic detection sensitivity, but this enhancement comes at the cost of introducing more low-frequency magnetic noise, such as the thermal magnetization noise of ferromagnetic materials, directly limiting their potential at low frequencies. Here, the enhancement of the signal-to-noise ratio (SNR) in extremely low-frequency magnetic field detection within NV magnetometry, achieved via nonlinear response, is experimentally demonstrated. The approach enables the extension of the magnetic field detection bandwidth to the Hz range while simultaneously enhancing magnetic field sensitivity by using a magnetic flux concentrator. The magnetic field from the coil current, enhanced by the flux concentrator, drives NV ensembles into the nonlinear response region of the differential spectrum of the optically detected magnetic resonance (ODMR). Within this regime, nonlinear effects generate signal-frequency mixing and 1/f noise suppression. By pre-modulating the target signal at the driving frequency, its recovery through frequency mixing retains 1/f noise suppression, consequently enhancing SNR. For the 0.5 Hz signal, experimental results demonstrate up to a 2.6-fold enhancement in SNR. This approach offers a new strategy for utilizing NV ensembles in extremely low-frequency magnetic field detection.","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 26","pages":""},"PeriodicalIF":7.2,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145051101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0