2008 International Nano-Optoelectronics Workshop最新文献

{"title":"Photonic crystals and silicon photonics","authors":"T. Baba","doi":"10.1109/INOW.2008.4634438","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634438","url":null,"abstract":"Photonic crystals and silicon photonics have dramatically reduced the size of photonic devices to a micron scale and added unique functionalities such as slow light and negative refraction. They will increase the feasibility of large scale photonic integration if lll-V devices are smartly combined with Si platform. This presentation discusses their current status and effective choice of photonic nanostructures in each photonic device.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133898794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Applications of PICs for computer architecture and interconnects","authors":"S. Kinoshita","doi":"10.1109/INOW.2008.4634442","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634442","url":null,"abstract":"High-speed and high port-count optical switches are very attractive for optical interconnecting applications in high-performance computing systems. To make such optical switches practical, however, the reduction of both switch-size and power consumption is essential. This presentation discusses the optical interconnect architecture with monolithically-integrated SOA gate switch devices and compact packaging technology by novel module assembly.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"198 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115656007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Subwavelength plasmonic resonator","authors":"A. Lakhani, Kyoungsik Yu, M. Wu","doi":"10.1109/INOW.2008.4634552","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634552","url":null,"abstract":"We simulate a novel plasmonic resonator at a center wavelength of lambda=737 nm based on a gold cavity with Q ap 53 and ~40% of the energy in the dielectric. We achieve a normalized mode volume of VCAN/(lambda/2n)3 ap 0.36.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121855272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"808 nm GaAsP/GaInP laser diode arrays grown by MOCVD using AsH3 and TBP","authors":"L. Zhong, Xiaoyu Ma, Shutang Wang, Su-ping Liu","doi":"10.1109/INOW.2008.4634525","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634525","url":null,"abstract":"The combination of AsH3 and TBP have been used as group V precursors in the MOCVD growth of GaAsP single quantum well (SQW) layers. The optical and electrical characteristics of GaAsP/GaInP QW laser diode arrays have been demonstrated.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123822562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Aberration reduction in composite photonic crystal negative refractive lens","authors":"T. Asatsuma, T. Baba","doi":"10.1109/INOW.2008.4634574","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634574","url":null,"abstract":"We propose a composite photonic crystal for compensating an aberration in negative refractive lens. We experimentally observed that the focal spot size was clearly narrowed, compared with the case of single photonic crystal.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121238242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanowires, nanoneedles and sub-wavelength structures: Enabling a new era of optoelectronic technologies","authors":"C. Chang-Hasnain","doi":"10.1109/INOW.2008.4634415","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634415","url":null,"abstract":"We review the progress of synthesis, characterization and properties of III-V compound semiconductor nanowires and nanoneedles grown on lattice-mismatched substrates and a new family of optoelectronic devices based on high-contrast grating. There are intense interests in semiconductor structures with dimensions at the two ends of the nanometer regime. Materials with size on the order of a few nanometers, close to the de Broglie wavelength, are critical because their physical properties may be altered by its dimensions. In particular, they offer a tremendous opportunity to engineer properties of active materials. On the other hand, materials with dimensions on the order of one hundred nanometer scale are of enormous interests because they open up a new window to re-examine the wave guiding properties in sub-wavelength structures. In this talk, I will discuss recent progress in these two areas. We will discuss the synthesis and characteristics of III-V compound nanowires and nanoneedles that are monolithically grown on Si and sapphire despite of a very large lattice mismatches (over 50% for the latter) [1-4]. The structures show excellent crystalline and optical quality. The nanowires are promising for ultra low threshold lasers and high efficiency solar cells. The nanoneedles, on the other hand, have an extremely sharp tip of a few atoms in diameter. They are shaped in hexagonal pyramid and have a sharp 6-9deg angles. Core-shell GaAs/AIGaAs and GaAs/lnGaAs/GaAs layered nanoneedles are demonstrated with bright photoluminescence. They will find applications for field emission tips, atomic force microscopic probe tips and atto-liter liquid delivery. For the hundred-nm regime structures, we recently discovered a novel high index contrast subwavelength grating (HCG) structure, which showed an unprecedented effects on optical wave guiding and reflection properties [5-9]. We showed a single grating with an exceedingly large bandwidth (Deltalambda/lambda=35%) at high reflectivity (99.5%) for surfacenormal incident light. The broad bandwidth was accompanied by a very large tolerance where key grating parameters can vary by 50% to still yield VCSEL with similar light-current characteristics. By varying the grating parameters, we show a single layer of uniform grating exhibits high-Q (14,000) resonator characteristics - again for surface-normal emission. The HCG grating brings guided-wave optics to a totally untrespassed regime and will find many useful applications in lasers, filters, waveguides, sensors and detectors.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123969953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and fabrication of beam-deflecting optical switch on InP","authors":"T. Fujimura, Takuo Tanemura, Y. Nakano","doi":"10.1109/INOW.2008.4634518","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634518","url":null,"abstract":"We propose and design a beam-deflecting 1times8 InGaAsP/InP optical switch with carrier-induced tunable prism and aspheric lenses. High switching efficiency of -1.9 dB at 1.93-deg deflection angle is obtained.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122532967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Subthreshold slope reduction of tunneling transistors through deformation potential engineering","authors":"S. Agarwal, G. Mazzeo, E. Yablonovitch","doi":"10.1109/INOW.2008.4634560","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634560","url":null,"abstract":"The subthreshold slope of a tunneling transistor can be reduced by reducing the effects of thermal vibrations on the band edge energy through a biaxial tensile strain and using a silicon germanium superlattice.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131082609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"“Structure and properties of deep-UV AlGaN MQW laser”","authors":"H. Kawanishi","doi":"10.1109/INOW.2008.4634427","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634427","url":null,"abstract":"Structure and properties of UV and deep-UV AlGaN MQW laser grown on c-plane SiC substrate are discussed. TM-mode lasing was demonstrated in deep-UV spectrum region. This is originated in band structure of AlGaN.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129555621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Micro rotation sensor design and analysis with a modified FDTD algorithm","authors":"Chao Peng, Zhengbin Li, A. Xu","doi":"10.1109/INOW.2008.4634530","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634530","url":null,"abstract":"We propose a modified FDTD algorithm to design and analyze micro sensitive rotation sensor based on rotating optical element. The algorithm can be applied to photonic structures with various material properties and complex geometric structures.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124400202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}