{"title":"变形势工程的隧道晶体管亚阈值斜率减小","authors":"S. Agarwal, G. Mazzeo, E. Yablonovitch","doi":"10.1109/INOW.2008.4634560","DOIUrl":null,"url":null,"abstract":"The subthreshold slope of a tunneling transistor can be reduced by reducing the effects of thermal vibrations on the band edge energy through a biaxial tensile strain and using a silicon germanium superlattice.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Subthreshold slope reduction of tunneling transistors through deformation potential engineering\",\"authors\":\"S. Agarwal, G. Mazzeo, E. Yablonovitch\",\"doi\":\"10.1109/INOW.2008.4634560\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The subthreshold slope of a tunneling transistor can be reduced by reducing the effects of thermal vibrations on the band edge energy through a biaxial tensile strain and using a silicon germanium superlattice.\",\"PeriodicalId\":112256,\"journal\":{\"name\":\"2008 International Nano-Optoelectronics Workshop\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Nano-Optoelectronics Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INOW.2008.4634560\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Nano-Optoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INOW.2008.4634560","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Subthreshold slope reduction of tunneling transistors through deformation potential engineering
The subthreshold slope of a tunneling transistor can be reduced by reducing the effects of thermal vibrations on the band edge energy through a biaxial tensile strain and using a silicon germanium superlattice.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
