{"title":"The Future of CMOS: More Moore or a New Disruptive Technology?","authors":"Nazek El‐atab, M. Hussain","doi":"10.1002/9783527811861.CH1","DOIUrl":"https://doi.org/10.1002/9783527811861.CH1","url":null,"abstract":"For more than four decades, Moore’s law has been driving the semiconductor industry where the number of transistors per chip roughly doubles every 18–24 months at a constant cost. Transistors have been relentlessly evolving from the first Ge transistor invented at Bell Labs in 1947 to planar Si metal-oxide semiconductor field-effect transistor (MOSFET), then to strained SiGe source/drain (S/D) in the 90and 65-nm technology nodes and high-κ/metal gate stack introduced at the 45and 32-nm nodes, then to the current 3D transistors (Fin field-effect transistors (FinFETs)) introduced at the 22-nm node in 2011 (Figure 1.1). In extremely scaled transistors, the parasitic and contact resistances greatly deteriorate the drive current and degrade the circuit speed. Thus, miniaturization of devices so far has been possible due to changes in dielectric, S/D, and contacts materials/processes, and innovations in lithography processes, in addition to changes in the device architecture [1, 2]. The gate length of current transistors has been scaled down to 14 nm and below, with over 109 transistors in state-of-the-art microprocessors. Yet, the clock speed is limited to 3–4 GHz due to thermal constraints, and further scaling down the device dimensions is becoming extremely difficult due to lithography challenges. In addition, further scaling down the complementary metal-oxide semiconductor (CMOS) technology is leading to larger interconnect delay and higher power density [3]. The complexity of physical design is also increasing with higher density of devices. So, what is next? A promising More-than-Moore technology is the 3D integrated circuits (ICs) which can improve the performance and reduce the intra-core wire length, and thereby enable high transfer bandwidth with reduced latencies and power consumption, while maintaining compact packing densities [4]. Alternative technologies that could be promising for new hardware accelerators include resistive computing, neuromorphic computing, and quantum computing. Resistive computing could lead to non–von Neumann (VN) computing and enforce reconfigurable and data-centric paradigms due to its massive parallelism and low power consumption [5]. Moreover, humans can easily outperform current high-performance computers in tasks like auditory and pattern recognition","PeriodicalId":107269,"journal":{"name":"Advanced Nanoelectronics","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116727377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Integration of Germanium into Modern CMOS: Challenges and Breakthroughs","authors":"W. Chung, Heng Wu, P. Ye","doi":"10.1002/9783527811861.CH4","DOIUrl":"https://doi.org/10.1002/9783527811861.CH4","url":null,"abstract":"","PeriodicalId":107269,"journal":{"name":"Advanced Nanoelectronics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129032476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Two-dimensional materials for electronic applications","authors":"Han Wang","doi":"10.1002/9783527811861.CH3","DOIUrl":"https://doi.org/10.1002/9783527811861.CH3","url":null,"abstract":"The successful isolation of graphene in 2004 has attracted great interest to search for potential applications of this unique material and other members of the two-dimensional materials family in electronics, optoelectronics and their interface with the biological systems. At this early stage of 2D materials research, many opportunities and challenges co-exist in this area. This thesis addresses the following issues which are crucial for 2D electronics to be successful, focusing on developing graphene for RF electronics and MoS2 for digital applications: (1) Development of some of the first graphene-based devices for high frequency applications; (2) Development of compact physical models for graphene transistors; and (3) Understanding the carrier transit delays in graphene transistors. In addition, this thesis proposes and experimentally demonstrates a completely new concept Ambipolar Electronics to take advantage of the unique properties of graphene for RF applications. Based on this new concept, a family of novel applications are developed that can significantly simplify the design of many fundamental building blocks in RF electronics, such as frequency multipliers, mixers and binary phase shift keying devices. In the last part of the thesis, the applications of other emerging 2D materials from the transition metal dichalcogenides family, such as molybdenum disulfide (MoS2), is also explored for potential application in digital electronics, especially as a new material option for high performance flexible electronics. The future opportunities and potential challenges for the applications of the 2D materials family are also discussed. Thesis supervisor: Tomás Palacios Title: Associate Professor of Electrical Engineering","PeriodicalId":107269,"journal":{"name":"Advanced Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125906585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Terahertz Properties and Applications of GaN","authors":"B. Sensale‐Rodriguez","doi":"10.1002/9783527811861.CH9","DOIUrl":"https://doi.org/10.1002/9783527811861.CH9","url":null,"abstract":"","PeriodicalId":107269,"journal":{"name":"Advanced Nanoelectronics","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127306783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
求助内容：
应助结果提醒方式：