III-Vs ReviewPub Date : 2006-12-01Epub Date: 2006-12-20DOI: 10.1016/S0961-1290(06)71939-1
Dr Jeffrey R. Lindemuth
{"title":"Parallel conduction in semiconductors","authors":"Dr Jeffrey R. Lindemuth","doi":"10.1016/S0961-1290(06)71939-1","DOIUrl":"10.1016/S0961-1290(06)71939-1","url":null,"abstract":"<div><p>Electronic transport characterization in semiconductor materials is becoming increasingly difficult as multi-layer and multi-carrier materials become more common. Examples include multiply doped or compensated regions, doping non-uniformities perpendicular to the conduction plane, 2D carriers at surfaces and interfaces, heterostructures, multiple quantum well structures, and materials with carriers populating different conduction band minima or valence band maxima. The heterostructures can contain delta-doped layers only a few atoms thick sandwiched between many other layers. Knowledge of the transport properties of all carriers present can greatly aid understanding of new materials and devices, identifying processing problems, and reducing costs by identifying good material early in the fabrication process.</p></div>","PeriodicalId":100654,"journal":{"name":"III-Vs Review","volume":"19 9","pages":"Pages 28-32"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0961-1290(06)71939-1","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86488825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
III-Vs ReviewPub Date : 2006-12-01Epub Date: 2006-12-20DOI: 10.1016/S0961-1290(06)71946-9
Roy Sweda (Acting Editor)
{"title":"Xmas is coming","authors":"Roy Sweda (Acting Editor)","doi":"10.1016/S0961-1290(06)71946-9","DOIUrl":"10.1016/S0961-1290(06)71946-9","url":null,"abstract":"<div><p>It is appropriate at this point of the magazine to wish our readers world over all the best of the season's greetings. No doubt next year will be just as exciting as 2006. Generally, it has been an interesting one, even if it has not been a financial bonanza for all. Technologically speaking, some milestones have been achieved and there are more in prospect.</p></div>","PeriodicalId":100654,"journal":{"name":"III-Vs Review","volume":"19 9","pages":"Page 48"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0961-1290(06)71946-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90590315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
III-Vs ReviewPub Date : 2006-12-01Epub Date: 2006-12-20DOI: 10.1016/S0961-1290(06)71933-0
{"title":"First Dragon CVD for SiC bulk","authors":"","doi":"10.1016/S0961-1290(06)71933-0","DOIUrl":"https://doi.org/10.1016/S0961-1290(06)71933-0","url":null,"abstract":"","PeriodicalId":100654,"journal":{"name":"III-Vs Review","volume":"19 9","pages":"Page 18"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0961-1290(06)71933-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"137346993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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