Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)最新文献

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Phonon Scattering by Inhomogeneously Distributed Paramagnetic Ions 非均匀分布顺磁离子对声子的散射
G. Toombs, F. Sheard
{"title":"Phonon Scattering by Inhomogeneously Distributed Paramagnetic Ions","authors":"G. Toombs, F. Sheard","doi":"10.1002/PSSB.2221300213","DOIUrl":"https://doi.org/10.1002/PSSB.2221300213","url":null,"abstract":"The Green function for phonons scattered by an inhomogeneous distribution of resonant centres is evaluated. A diagrammatic expansion in two parameters is used: the coupling strength and α, the ratio of the resonant phonon wavelengths to the characteristic wavelength for the distribution of scatterers. For small values of α, a spatially dependent local dispersion and damping of the phonons is obtained. The effect on the linewidth for inelastic neutron scattering is discussed. \u0000 \u0000 \u0000 \u0000Die Greensche Funktion fur Phononen, die an einer inhomogenen Verteilung resonanter Zentren gestreut werden, wird berechnet. Es wird eine Diagramm-Entwicklung nach zwei Parametern verwendet: die Starke der Kopplung und das Verhaltnis der resonanten Phononwellenlange zur charakteristischen Wellenlange der Verteilung der Streuzentren (α). Fur kleine Werte von α wird eine ortsabhangige lokale Dispersion sowie eine Dampfung der Phononen erhalten. Die Aus-wirkung auf die Linienbreite bei inelastischer Neutronenstreuung wird diskutiert.","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86675066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of Thermal Charge Density Fluctuations on the Specific Heat of Normal Metals 热电荷密度波动对普通金属比热的影响
E. Pamyatnykh, A. Poltavets
{"title":"Effect of Thermal Charge Density Fluctuations on the Specific Heat of Normal Metals","authors":"E. Pamyatnykh, A. Poltavets","doi":"10.1002/PSSB.2221300251","DOIUrl":"https://doi.org/10.1002/PSSB.2221300251","url":null,"abstract":"","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"82 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78209956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Universal Approximation Formulas for the Gap Shift in Doped Semiconductors 掺杂半导体中隙移的通用近似公式
F. Thuselt, M. Rösler
{"title":"Universal Approximation Formulas for the Gap Shift in Doped Semiconductors","authors":"F. Thuselt, M. Rösler","doi":"10.1002/PSSB.2221300260","DOIUrl":"https://doi.org/10.1002/PSSB.2221300260","url":null,"abstract":"","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"133 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76717008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The Compton Profile of Polycrystalline TiH1.98 多晶TiH1.98的康普顿轮廓
G. Boulakis
{"title":"The Compton Profile of Polycrystalline TiH1.98","authors":"G. Boulakis","doi":"10.1002/PSSB.2221300257","DOIUrl":"https://doi.org/10.1002/PSSB.2221300257","url":null,"abstract":"","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"63 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74712708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Relation between Short-Range and Long-Range Order in Solid Solutions with Basal B.C.C. and F.C.C. Structures 具有基本b.c.c和f.c.c结构的固溶体中近程阶和长程阶的关系
A. Rempel, A. I. Gusev
{"title":"Relation between Short-Range and Long-Range Order in Solid Solutions with Basal B.C.C. and F.C.C. Structures","authors":"A. Rempel, A. I. Gusev","doi":"10.1002/PSSB.2221300202","DOIUrl":"https://doi.org/10.1002/PSSB.2221300202","url":null,"abstract":"A method is proposed to determine the number of nearest coordination spheres in which the presence of limiting short-range order is sufficient to produce long-range order. The use of the method is considered with reference to the example of atomic ordering in solid solutions with b.c.c. and f.c.c. structures. It is suggested that a qualitative dependence exists between the kind of order—disorder phase transition and the relation of short-range and long-range order in the solid solutions involved. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored]","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83539922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Superconducting Transition Temperature and the Formation of Closed Electron Shells in the Atoms of Superconducting Compounds 超导转变温度与超导化合物原子中封闭电子壳层的形成
I. Chapnik
{"title":"Superconducting Transition Temperature and the Formation of Closed Electron Shells in the Atoms of Superconducting Compounds","authors":"I. Chapnik","doi":"10.1002/PSSB.2221300268","DOIUrl":"https://doi.org/10.1002/PSSB.2221300268","url":null,"abstract":"","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"36 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81651247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
3d-Impurity Levels in CdTe and ZnSe 3d- CdTe和ZnSe中的杂质水平
K. D. Tovstyuk, V. G. Deybuk, S. V. Melnichuk, N. Tovstyuk
{"title":"3d-Impurity Levels in CdTe and ZnSe","authors":"K. D. Tovstyuk, V. G. Deybuk, S. V. Melnichuk, N. Tovstyuk","doi":"10.1002/PSSB.2221300263","DOIUrl":"https://doi.org/10.1002/PSSB.2221300263","url":null,"abstract":"","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74639977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Laser Induced Defects in GaAs Layers 激光诱导的砷化镓层缺陷
W. Wesch, E. Wendler, G. Götz, K. Unger, H. Röppischer, C. Resagk
{"title":"Laser Induced Defects in GaAs Layers","authors":"W. Wesch, E. Wendler, G. Götz, K. Unger, H. Röppischer, C. Resagk","doi":"10.1002/PSSB.2221300217","DOIUrl":"https://doi.org/10.1002/PSSB.2221300217","url":null,"abstract":"Annealing of ion implanted GaAs layers as well as irradiation of unimplanted samples with nanosecond laser pulses is connected with the formation of exponential absorption tails near the fundamental absorption edge with the dependence K ˜ exp [ħω(E)−1] on the photon energy. Identical behaviour is found in weakly damaged ion implanted layers. The observed high near edge absorption is connected with almost no refractive index change. The characteristic energy E is independent on the implanted ion species and increases with the nuclear deposited energy density and the laser energy density from about ≈ 0.1 eV up to a maximum value of 0.52 eV. The defects responsible for this behaviour act as compensating centers for free carriers. The experimental findings and the missing pronounced absorption tail in irradiated silicon supports the conclusion that defects typical for compound semiconductors are produced. Assuming high concentrations of vacancies and anti-site defects the experimentally found values for E can be explained from theoretical calculations. \u0000 \u0000 \u0000 \u0000Die Ausheilung von ionenimplantierten GaAs-Schichten und die Bestrahlung nicht implantierten Materials mit Nanosekunden-Laserimpulsen fuhrt zur Ausbildung exponentieller Auslaufer des Absorptionskoeffizienten nahe der Bandkante der Form K ˜ exp [ħω(E)−1]. Identisches Verhalten wird auch in schwach geschadigten implantierten Schichten nachgewiesen, die erhohte Absorption ist mit keiner merklichen BrechzahlvergrosBerung verbunden. Die charakteristische Energie E ist unabhangig von der Art der implantierten Ionen und wachst mit der nuklear deponierten Energiedichte und der Laserenergiedichte von 0,1 eV bis zu einem Sattigungswert von 0,52 eV. Die fur dieses Verhalten verantwortlichen Defekte fuhren zur Kompensation der n-Leitung. Aus den experimentellen Befunden und unter Berucksichtigung der Tatsache, das in Si derart ausgepragte Auslaufer des Absorptionskoeffizienten nahe der Bandkante nicht beobachtet werden, wird auf die Bildung von fur Verbindungshalbleiter typischen Eigendefekten geschlossen. Unter der Annahme hoher Vakanzen- und anti site-Defektkonzentrationen konnen die experimentell gefundenen Werte fur E theoretisch erklart werden.","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"6 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78947556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Point Defect Entropies and Enthalpies in KCl KCl的点缺陷熵和焓
C. Varotsos, M. Lazaridou, K. Alexopoulos, P. Varotsos
{"title":"Point Defect Entropies and Enthalpies in KCl","authors":"C. Varotsos, M. Lazaridou, K. Alexopoulos, P. Varotsos","doi":"10.1002/PSSB.2221300252","DOIUrl":"https://doi.org/10.1002/PSSB.2221300252","url":null,"abstract":"","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"54 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86121575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical Resistivity and Thermoelectric Power of Spinodal Decomposing Crystals Spinodal分解晶体的电阻率和热电功率
G. Schubert, W. Löser
{"title":"Electrical Resistivity and Thermoelectric Power of Spinodal Decomposing Crystals","authors":"G. Schubert, W. Löser","doi":"10.1002/PSSB.2221300242","DOIUrl":"https://doi.org/10.1002/PSSB.2221300242","url":null,"abstract":"The electrical resistivity and the thermoelectric power during spinodal decomposition in binary alloys are calculated, especially submicroscopic fluctuations are taken into account. The thermoelectric power shows a monotonous dependence on time whereas a maximum behaviour is obtained for the electrical resistivity. Both results agree with experimental observations. \u0000 \u0000 \u0000 \u0000Der elektrische Widerstand und die Thermokraft bei der spinodalen Entmischung in binaren Legierungen werden berechnet, wobei insbesondere submikroskopische Fluktuationen berucksichtigt werden. Die Thermokraft zeigt eine monotone Abhangigkeit von der Zeit, wahrend fur den elektrischen Widerstand ein Maximum auftritt. Beide Ergebnisse stimmen mit den experimentellen Beobachtungen uberein.","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"82 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88170014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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