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Two-dimensional iron oxide/graphene-based nanocomposites as high-performance solid lubricants 作为高性能固体润滑剂的二维氧化铁/石墨烯基纳米复合材料
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-07-11 DOI: 10.1088/2053-1583/ad5f3f
Pratik S Kasbe, Muxuan Yang, Juan Bosch, Jinyu Bu, Christopher DellaCorte and Weinan Xu
{"title":"Two-dimensional iron oxide/graphene-based nanocomposites as high-performance solid lubricants","authors":"Pratik S Kasbe, Muxuan Yang, Juan Bosch, Jinyu Bu, Christopher DellaCorte and Weinan Xu","doi":"10.1088/2053-1583/ad5f3f","DOIUrl":"https://doi.org/10.1088/2053-1583/ad5f3f","url":null,"abstract":"Beyond conventional 2D layered materials such as graphene and transition metal dichalcogenides, 2D metal oxides have also received much interest in recent years. They have unique electronic (such as 2D TiO2 and MoO2), catalytic (such as 2D CeO2 and MnO2), and magnetic properties (such as 2D Fe2O3) compared with bulk metal oxides due to their atomically thin structures. Certain types of 2D metal oxides also have the potential to be a new type of high-performance solid lubricants due to the tunable interlayer interaction and possibility for 2D heterostructure formation, but this remains largely unexplored. In this work, we developed a scalable microwave-assisted solid-state synthesis of 2D Fe2O3 and their nanocomposites with reduced graphene oxide (rGO). The 2D Fe2O3/rGO nanocomposites were systematically characterized by electron microscopies and spectroscopies, and their utilization as solid lubricants was studied by pin-on-disk tribometer on both silicon and steel substrates. The results show that due to the easy sliding between 2D Fe2O3 and rGO nanosheets and their unique magnetic-induced assembled morphology, low coefficient of friction (COF) can be achieved for both steel-silicon and steel-steel interfaces. Superlubricity (COF ∼ 0.007) can be achieved for the 2D Fe2O3/rGO nanocomposite with a GO primer layer on a steel substrate. This work provides new insights into the development of functional 2D nanocomposites and expands their applications to solid lubrication and beyond.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"24 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141611639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Towards revealing intrinsic vortex-core states in Fe-based superconductors through statistical discovery 通过统计发现揭示铁基超导体中的内在涡核状态
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-07-10 DOI: 10.1088/2053-1583/ad5e92
Yueming Guo, Hu Miao, Qiang Zou, Mingming Fu, Athena S Sefat, Andrew R Lupini, Sergei V Kalinin and Zheng Gai
{"title":"Towards revealing intrinsic vortex-core states in Fe-based superconductors through statistical discovery","authors":"Yueming Guo, Hu Miao, Qiang Zou, Mingming Fu, Athena S Sefat, Andrew R Lupini, Sergei V Kalinin and Zheng Gai","doi":"10.1088/2053-1583/ad5e92","DOIUrl":"https://doi.org/10.1088/2053-1583/ad5e92","url":null,"abstract":"In type-II superconductors, electronic states within magnetic vortices hold crucial information about the paring mechanism and can reveal non-trivial topology. While scanning tunneling microscopy/spectroscopy (STM/S) is a powerful tool for imaging superconducting vortices, it is challenging to isolate the intrinsic electronic properties from extrinsic effects like subsurface defects and disorders. Here we combine STM/STS with basic machine learning to develop a method for screening out the vortices pinned by embedded disorder in iron-based superconductors. Through a principal component analysis of large STS data within vortices, we find that the vortex-core states in Ba(Fe0.96Ni0.04)2As2 start to split into two categories at certain magnetic field strengths, reflecting vortices with and without pinning by subsurface defects or disorders. Our machine-learning analysis provides an unbiased approach to reveal intrinsic vortex-core states in novel superconductors and shed light on ongoing puzzles in the possible emergence of a Majorana zero mode.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"23 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141586486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Versatile fitting approach for operando spectroscopic imaging ellipsometry of HfS2 oxidation 用于 HfS2 氧化操作光谱成像椭偏仪的多功能拟合方法
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-07-01 DOI: 10.1088/2053-1583/ad58f1
Irina Chircă, AbdulAziz AlMutairi, Barat Achinuq, Rongsheng Cai, Sarah J Haigh and Stephan Hofmann
{"title":"Versatile fitting approach for operando spectroscopic imaging ellipsometry of HfS2 oxidation","authors":"Irina Chircă, AbdulAziz AlMutairi, Barat Achinuq, Rongsheng Cai, Sarah J Haigh and Stephan Hofmann","doi":"10.1088/2053-1583/ad58f1","DOIUrl":"https://doi.org/10.1088/2053-1583/ad58f1","url":null,"abstract":"Facile mapping of 2D heterostructures and resolving anisotropic formation kinetics down to the monolayer level are critical to developing scalable interfacing solutions and unlocking their application potential in emerging nano-optoelectronics. We adapt a Kramers–Kronig constrained variational fitting algorithm for spectroscopic imaging ellipsometry (SIE) to facilitate multi-scale heterostructure analysis comprising films with unknown complex dielectric functions and demonstrate how this enables non-destructive, scalable mapping and operando capability for the model system of HfS2 oxidation. This methodology proves highly accurate for assessing the thickness of buried HfS2 layers, oxide quality, and lateral and vertical uniformity. We capture dynamic stack evolution during thermal oxidation up to 400 ∘C, providing insights into the temperature and time-dependent nature of self-limiting oxide growth and reaction kinetics that involve the localised trapping and release of sulphur reaction products. Our methodology is versatile in material and device horizons, and advantageously agnostic to the underlying substrate. Combined with the various modes of SIE operation, it unlocks fast, high-throughput, large-area capability to accelerate process development at the atomic scale.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"24 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141501426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature-dependent indirect gaps for two-dimensional bismuth oxychalcogenides probed by spectroscopic ellipsometry 通过光谱椭偏仪探测二维氧粲铋化合物随温度变化的间接间隙
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-06-12 DOI: 10.1088/2053-1583/ad50ad
Hsiang-Lin Liu, Hsiao-Wen Chen, Nguyen Tuan Hung, Yi-Cheng Chen, Heng-Jui Liu, Chieh-Ting Chen, Yu-Lun Chueh, Ying-Hao Chu and Riichiro Saito
{"title":"Temperature-dependent indirect gaps for two-dimensional bismuth oxychalcogenides probed by spectroscopic ellipsometry","authors":"Hsiang-Lin Liu, Hsiao-Wen Chen, Nguyen Tuan Hung, Yi-Cheng Chen, Heng-Jui Liu, Chieh-Ting Chen, Yu-Lun Chueh, Ying-Hao Chu and Riichiro Saito","doi":"10.1088/2053-1583/ad50ad","DOIUrl":"https://doi.org/10.1088/2053-1583/ad50ad","url":null,"abstract":"In-plane optical properties of two-dimensional bismuth oxychalcogenides Bi2O2X (X = S, Se, and Te) are reported for a wide spectral range of 0.73–6.42 eV and at temperatures of 4.5–500 K by spectroscopic ellipsometry. At room temperature, Bi2O2S, Bi2O2Se, and Bi2O2Te exhibit an indirect band gap of 1.18 ± 0.02, 0.95 ± 0.01, and 0.60 ± 0.01 eV, respectively. As the temperature decreases, the indirect absorption edge of Bi2O2S undergoes a blueshift, while the indirect band gap of Bi2O2Se shows a redshift, and Bi2O2Te remains independent of temperature. The chalcogenide-dependent behavior as a function of temperature may be relevant to electron–phonon interactions in Bi2O2X materials. The observed pseudo-isotropic complex dielectric function and optical absorption coefficient by spectroscopic ellipsometry are directly compared with the first-principles calculations with a hybrid functional approach.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"5 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoexcited charge carrier dynamics and electronic properties of two-dimensional MXene, Nb2CT x 二维 MXene、Nb2CT x 的光激发电荷载流子动力学和电子特性
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-06-11 DOI: 10.1088/2053-1583/ad518d
Andrew M Fitzgerald, Emily Sutherland, Tarek Ali El-Melegy, Mary Qin Hassig, Julia L Martin, Erika Colin-Ulloa, Ken Ngo, Ronald L Grimm, Joshua R Uzarski, Michel W Barsoum, N Aaron Deskins, Lyubov V Titova and Kateryna Kushnir Friedman
{"title":"Photoexcited charge carrier dynamics and electronic properties of two-dimensional MXene, Nb2CT x","authors":"Andrew M Fitzgerald, Emily Sutherland, Tarek Ali El-Melegy, Mary Qin Hassig, Julia L Martin, Erika Colin-Ulloa, Ken Ngo, Ronald L Grimm, Joshua R Uzarski, Michel W Barsoum, N Aaron Deskins, Lyubov V Titova and Kateryna Kushnir Friedman","doi":"10.1088/2053-1583/ad518d","DOIUrl":"https://doi.org/10.1088/2053-1583/ad518d","url":null,"abstract":"Two-dimensional, 2D, niobium carbide MXene, Nb2CTx, has attracted attention due to its extraordinarily high photothermal conversion efficiency that has applications ranging from medicine, for tumor ablation, to solar energy conversion. Here, we characterize its electronic properties and investigate the ultrafast dynamics of its photoexcitations with a goal of shedding light onto the origins of its unique properties. Through density functional theory, DFT, calculations, we find that Nb2CTx is metallic, with a small but finite DOS at the Fermi level for all experimentally relevant terminations that can be achieved using HF or molten salt etching of the parent MAX phase, including –OH, –O, –F, –Cl, –Br, –I. In agreement with this prediction, THz spectroscopy reveals an intrinsic long-range conductivity of ∼60 Ω−1 cm−1, with significant charge carrier localization and a charge carrier density (∼1020 cm−3) comparable to Mo-based MXenes. Excitation with 800 nm pulses results in a rapid enhancement in photoconductivity, which decays to less than 25% of its peak value within several picoseconds, underlying efficient photothermal conversion. At the same time, a small fraction of photoinjected excess carriers persists for hundreds of picoseconds, and can potentially be utilized in photocatalysis or other energy conversion applications.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"57 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2024-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141501225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interplay of altermagnetism and weak ferromagnetism in two-dimensional RuF4 二维 RuF4 中的变磁性和弱铁磁性的相互作用
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-05-29 DOI: 10.1088/2053-1583/ad4c73
Marko Milivojević, Marko Orozović, Silvia Picozzi, Martin Gmitra and Srđan Stavrić
{"title":"Interplay of altermagnetism and weak ferromagnetism in two-dimensional RuF4","authors":"Marko Milivojević, Marko Orozović, Silvia Picozzi, Martin Gmitra and Srđan Stavrić","doi":"10.1088/2053-1583/ad4c73","DOIUrl":"https://doi.org/10.1088/2053-1583/ad4c73","url":null,"abstract":"Gaining growing attention in spintronics is a class of magnets displaying zero net magnetization and spin-split electronic bands called altermagnets. Here, by combining density functional theory and symmetry analysis, we show that RuF4 monolayer is a two-dimensional (2D) d-wave altermagnet. Spin–orbit coupling leads to pronounced spin splitting of the electronic bands at the Γ point by and turns the RuF4 into a weak ferromagnet due to nontrivial spin-momentum locking that cants the Ru magnetic moments. The net magnetic moment scales linearly with the spin–orbit coupling strength. Using group theory we derive an effective spin Hamiltonian capturing the spin-splitting and spin-momentum locking of the electronic bands. Disentanglement of the altermagnetic and spin–orbit coupling induced spin splitting uncovers to which extent the altermagnetic properties are affected by the spin–orbit coupling. Our results move the spotlight to the nontrivial spin-momentum locking and weak ferromagnetism in the 2D altermagnets relevant for novel venues in this emerging field of material science research.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"43 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2024-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141198355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Role of chalcogen vacancies and hydrogen in the optical and electrical properties of bulk transition-metal dichalcogenides 铬空位和氢在块状过渡金属二卤化物的光学和电学特性中的作用
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-05-23 DOI: 10.1088/2053-1583/ad4720
Shoaib Khalid, Anderson Janotti and Bharat Medasani
{"title":"Role of chalcogen vacancies and hydrogen in the optical and electrical properties of bulk transition-metal dichalcogenides","authors":"Shoaib Khalid, Anderson Janotti and Bharat Medasani","doi":"10.1088/2053-1583/ad4720","DOIUrl":"https://doi.org/10.1088/2053-1583/ad4720","url":null,"abstract":"Like in any other semiconductor, point defects in transition-metal dichalcogenides (TMDs) are expected to strongly impact their electronic and optical properties. However, identifying defects in these layered two-dimensional materials has been quite challenging with controversial conclusions despite the extensive literature in the past decade. Using first-principles calculations, we revisit the role of chalcogen vacancies and hydrogen impurity in bulk TMDs, reporting formation energies and thermodynamic and optical transition levels. We show that the S vacancy can explain recently observed cathodoluminescence spectra of MoS2 flakes and predict similar optical levels in the other TMDs. In the case of the H impurity, we find it more stable sitting on an interstitial site in the Mo plane, acting as a shallow donor, and possibly explaining the often observed n-type conductivity in some TMDs. We also predict the frequencies of the local vibration modes for the H impurity, aiding its identification through Raman or infrared spectroscopy.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"692 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2024-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141147607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Delusive chirality and periodic strain pattern in moiré systems 摩尔纹系统中的妄想手性和周期应变模式
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-05-08 DOI: 10.1088/2053-1583/ad3cea
Árpád Pásztor, Ishita Pushkarna, Christoph Renner
{"title":"Delusive chirality and periodic strain pattern in moiré systems","authors":"Árpád Pásztor, Ishita Pushkarna, Christoph Renner","doi":"10.1088/2053-1583/ad3cea","DOIUrl":"https://doi.org/10.1088/2053-1583/ad3cea","url":null,"abstract":"Geometric phase analysis (GPA) is a widely used technique for extracting displacement and strain fields from scanning probe images. Here, we demonstrate that GPA should be implemented with caution when several fundamental lattices contribute to the image, in particular in twisted heterostructures featuring moiré patterns. We find that in this case, GPA is likely to suggest the presence of chiral displacement and periodic strain fields, even if the structure is completely relaxed and without distortions. These delusive fields are subject to change with varying twist angles, which could mislead the interpretation of twist angle-dependent properties.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"40 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140926930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pseudomagnetic fields in fully relaxed twisted bilayer and trilayer graphene 完全松弛扭曲双层和三层石墨烯中的伪磁场
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-04-30 DOI: 10.1088/2053-1583/ad3b0e
A Ceferino, F Guinea
{"title":"Pseudomagnetic fields in fully relaxed twisted bilayer and trilayer graphene","authors":"A Ceferino, F Guinea","doi":"10.1088/2053-1583/ad3b0e","DOIUrl":"https://doi.org/10.1088/2053-1583/ad3b0e","url":null,"abstract":"We present simple models to describe the in-plane and the out-of-plane lattice relaxation in twisted bilayer and symmetrically twisted trilayer graphene. Analytical results and series expansions show that for twist angles <inline-formula>\u0000<tex-math><?CDATA $thetagt 1.4^{circ}$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mrow><mml:mi>θ</mml:mi><mml:mo>&gt;</mml:mo><mml:msup><mml:mn>1.4</mml:mn><mml:mrow><mml:mo>∘</mml:mo></mml:mrow></mml:msup></mml:mrow></mml:math>\u0000<inline-graphic xlink:href=\"tdmad3b0eieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula>, the in-plane atomic displacements lead to pseudomagnetic fields weakly dependent on <italic toggle=\"yes\">θ</italic>. In symmetrically twisted trilayer graphene, the central layer in-plane relaxation is greatly enhanced. The joint effect of the relaxation-induced pseudoscalar potentials and the associated energy difference between interlayer dimer and non-dimer pairs resulted in a significant electron–hole asymmetry both in twisted bilayer and trilayer graphene.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"10 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2024-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140834682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dislocations in twistronic heterostructures 双子异质结构中的位错
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-04-25 DOI: 10.1088/2053-1583/ad3b13
V V Enaldiev
{"title":"Dislocations in twistronic heterostructures","authors":"V V Enaldiev","doi":"10.1088/2053-1583/ad3b13","DOIUrl":"https://doi.org/10.1088/2053-1583/ad3b13","url":null,"abstract":"Long-period moiré superlattices at the twisted interface of van der Waals heterostructures relax into preferential stacking domains separated by dislocation networks. Here, we develop a mesoscale theory for dislocations in networks formed in twistronic bilayers with parallel (P) and antiparallel (AP) alignment of unit cells across the twisted interface. For P bilayers we find an exact analytical displacement field across partial dislocations and determine analytic dependences of energy per unit length and width on the orientation and microscopic model parameters. For AP bilayers we formulate a semi-analytical approximation for displacement fields across perfect dislocations, establishing parametric dependences for their widths and energies per unit length. In addition, we find regions in the parametric space of crystal thicknesses and Moiré periods for strong and weak relaxation of the Moiré pattern in multilayered twistronic heterostructures.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"6 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2024-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140798318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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