2017 IEEE Photonics Conference (IPC) Part II最新文献_第8页

Extremely large mode-area compact hybrid multi-trench fiber with controlled leakage loss 极大模面积紧凑混合多沟光纤，泄漏损耗可控

2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116260

B. M. Kurade, Nidhin Prasad, G. T. Raja, S. Varshney

引用次数: 0

Sub-sampled optical techniques for wideband spectral monitoring 宽带频谱监测的次采样光学技术

2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116071

J. McKinney, Ross T. Schermar

引用次数: 0

Single shot color imaging through scattering media using a monochromatic camera 单色相机通过散射介质进行单镜头彩色成像

2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116136

S. K. Sahoo, D. Tang, Cuong Dang

引用次数: 1

Precoded-DC-biased optical OFDM system for visible light communications 用于可见光通信的预编码- dc偏置光学OFDM系统

2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116218

Tao Jiang, M. Tang, R. Lin

引用次数: 1

Regenerative multi-tone injection locking for linewidth enhancement and repetition rate stabilization of a PIC mode-locked laser 用于PIC锁模激光器线宽增强和重复率稳定的再生多音注入锁定

2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116066

R. B. Ramirez, M. Plascak, K. Bagnell, A. Bhardwaj, J. Ferrara, G. Hoefler, Ming C. Wu, P. Delfyett

引用次数: 0

Fabrication of a gradient-index optical fiber lens by focused ion beam 聚焦离子束制备梯度折射率光纤透镜

2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116108

H. Melkonyan, K. Sloyan, Paulo Moreira, M. Dahlem

引用次数: 3

Simulation of molecular beam epitaxy type II infrared superlattice growth 分子束外延II型红外超晶格生长的模拟

2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116166

C. Grein

引用次数: 0

Bright single InAs quantum dots at telecom wavelengths in site-selective InP nanowires 选择性InP纳米线中电信波长的亮单InAs量子点

2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116092

S. Haffouz, D. Dalacu, P. Poole, K. Mnaymneh, J. Lapointe, G. Aers, D. Poltras, R. Williams

{"title":"Bright single InAs quantum dots at telecom wavelengths in site-selective InP nanowires","authors":"S. Haffouz, D. Dalacu, P. Poole, K. Mnaymneh, J. Lapointe, G. Aers, D. Poltras, R. Williams","doi":"10.1109/IPCON.2017.8116092","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116092","url":null,"abstract":"Non-classical light sources that can produce streams of correlated on-demand photons are a central building block for optics based quantum information technologies. There are numerous possible approaches for producing such a light source. One of the most promising is the solid-state single photon source based on a single quantum dot in III-V semiconductors. Utilizing a single InAs quantum dot in an InP nanowire, we previously demonstrated a bright and efficient source for single photons [1] and entangled photon pairs [2] that emits around 950 nm. In order to interface with telecom systems, single photon sources emitting at longer wavelengths are required. A few works have extended the emission to the telecom band using a single InAs/InP quantum dot in a micro-cavity [3-4]. However, improving the source brightness and the extraction efficiency remains a challenging task. In this contribution, by modifying the growth conditions and the pre-growth pattern for an InAs dot in an InP nanowire, we demonstrate a bright light source that emits in the telecom O-band, an important step towards the demonstration of a single photon source.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"86 1-2 1","pages":"253-254"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78051042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Room temperature operation of InAs quantum dot lasers formed by diblock-copolymer lithography and selective area MOCVD growth 双嵌段共聚物光刻和选择性MOCVD生长形成的InAs量子点激光器的室温操作

2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116160

Honghyuk Kim, Wei Wei, T. Kuech, P. Gopalan, L. Mawst

{"title":"Room temperature operation of InAs quantum dot lasers formed by diblock-copolymer lithography and selective area MOCVD growth","authors":"Honghyuk Kim, Wei Wei, T. Kuech, P. Gopalan, L. Mawst","doi":"10.1109/IPCON.2017.8116160","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116160","url":null,"abstract":"Semiconductor Laser diodes (LD) employing quantum dot (QD) active regions have attracted attention due to the theoretical predictions: low threshold current density and low temperature sensitivity originated from the delta-function-like density of states and small active volume [1]. However, while high performance devices have been demonstrated, the realization of all the predicted advantages has remained challenging. Self-assembled QDs grown by Stranski-Krastanov (SK) growth mode can suffer from an inhomogeneity in the QD size distribution, as well as an inherent wetting layer [2]. Nanopatterning and selective metalorganic chemical vapor deposition (MOCVD) growth offer a more controllable pathway for QD formation, allowing the QD size to be decoupled from the strain state of the material. This process results in the formation of dense arrays of wetting-layer-free QDs, although the challenges stemming from surface state formation and efficient carrier injection into the QDs remain problematic issues [3]. As such, previously reported LDs employing these In0.3Ga0.7As QD active regions only operate at low temperatures [3]. It has been contended that embedding the SK QDs within an InGaAs quantum well (QW) improves carrier capture into the quantum dots [4]. Here, we demonstrate an In0.1Ga0.9As QW placed adjacent to a wetting layer-free InAs QD active region leads to improved active region carrier collection, allowing for room temperature (RT) lasing. The LDs employ an active region consisting of a dense single-layer array of compressively-strained InAs QDs (Density ∼ 4×1010cm−2), selectively grown by MOCVD on top of a 4nm thick In0.1Ga0.9As QW.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"33 1","pages":"405-406"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76494600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Fabrication of dual layer, dual width waveguides for dispersion engineered InP photonic circuits 用于色散工程InP光子电路的双层双宽波导的制造

2017 IEEE Photonics Conference (IPC) Part II Pub Date : 2017-10-01 DOI: 10.1109/IPCON.2017.8116215

J. Kjellman, R. Stabile, K. Williams

引用次数: 1