[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials最新文献

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The universal dielectric response and its physical significance 通用介电响应及其物理意义
A.K. Johnscher
{"title":"The universal dielectric response and its physical significance","authors":"A.K. Johnscher","doi":"10.1109/ICPADM.1991.172343","DOIUrl":"https://doi.org/10.1109/ICPADM.1991.172343","url":null,"abstract":"Gives a comprehensive presentation of an integrating approach to the interpretation of the universal behavior of relaxation in a wide range of dielectric systems. The concepts of energy criterion, of screening, and of different types of interactions between charges or dipoles based on Coulombic 'structural' or any other type of coupling are being applied to a variety of situations and they are seen to give a satisfactory explanation of the behavior of a wide range of systems. It is believed that this approach offers a better insight into the responses of many systems that could be had under alternative theories, but it is pointed out that this does not necessarily constitute a proof of its validity.<<ETX>>","PeriodicalId":6450,"journal":{"name":"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials","volume":"14 1","pages":"1-11 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1991-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75028488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 134
Thermostimulated depolarization (TSD) currents of silicone rubber housings and coatings 硅橡胶外壳和涂层的热激退极化电流
S. Gubanski
{"title":"Thermostimulated depolarization (TSD) currents of silicone rubber housings and coatings","authors":"S. Gubanski","doi":"10.1109/ICPADM.1991.172131","DOIUrl":"https://doi.org/10.1109/ICPADM.1991.172131","url":null,"abstract":"The TSD fractional polarization current technique was applied to characterize changes in silicone rubber based materials that were exposed to an aging process in natural service conditions as HV outdoor composite insulation housings and coatings. An elevated temperature polarization process, which is characteristic for silicone rubbers, was analyzed and the distribution of thermokinetic parameters of its relaxation time tau , such as preexponential factor tau /sub oa/ and activation enthalpy Delta H, was found. The natural aging process leads to a drastic decrease of the tau /sub oa/ values, while the Delta H values increase slightly.<<ETX>>","PeriodicalId":6450,"journal":{"name":"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials","volume":"15 1","pages":"81-84 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1991-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75110227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
On the mechanism of dielectric breakdown of ceramic for HV capacitors 高压电容器用陶瓷介质击穿机理研究
Wan Rongen, Chen Shoutian
{"title":"On the mechanism of dielectric breakdown of ceramic for HV capacitors","authors":"Wan Rongen, Chen Shoutian","doi":"10.1109/ICPADM.1991.172257","DOIUrl":"https://doi.org/10.1109/ICPADM.1991.172257","url":null,"abstract":"Dielectric breakdown tests were performed on specimens prepared from BaTiO/sub 3/ material with additives (less than 10%) mainly of MgTiO/sub 3/, CaZrO/sub 3/, Bi/sub 2/O/sub 3/, and SnO/sub 2/. The dielectric constant of the specimen is about 6500 and the Curie point temperature is about 20 degrees C. The mechanism of dielectric breakdown is mainly thermal breakdown at T>T/sub c/, because breakdown stresses decrease with temperature. Breakdown occurs in the grain boundary layer at T>T/sub c/. It does not arise from thermal mechanisms or electrical mechanisms and relative to mechanical properties of low temperature and additives of specimens.<<ETX>>","PeriodicalId":6450,"journal":{"name":"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials","volume":"95 1","pages":"1061-1063 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1991-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73070016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Investigation of insulating properties of crushed-stone on the conditions it should perform as a security element in electrical systems 碎石在电气系统中作为安全元件时绝缘性能的研究
V. Silverio, M.R. Scoralick, C. Portela
{"title":"Investigation of insulating properties of crushed-stone on the conditions it should perform as a security element in electrical systems","authors":"V. Silverio, M.R. Scoralick, C. Portela","doi":"10.1109/ICPADM.1991.172305","DOIUrl":"https://doi.org/10.1109/ICPADM.1991.172305","url":null,"abstract":"The authors investigate the effective insulating properties of the types of crushed stones usually employed in Brazilian substations in the frequency range of the most important occurrences at electric power systems (from normal conditions to transients associated with atmospheric discharges). The measurements consider several humidities of the material. The influence of impregnating water resistivity is evaluated in the range of values actually found for rain water. In the frequency range investigated, only the values found for the condition of entire immersion of the material into water presented values of resistivity lower than 3000 Omega -m, which is generally adopted by the Brazilian utility companies in their projects.<<ETX>>","PeriodicalId":6450,"journal":{"name":"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials","volume":"77 1","pages":"1242-1245 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1991-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74977114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Breakdown strength affected by the interface roughness at the semiconducting layer in XLPE power cables 交联聚乙烯电力电缆半导体层界面粗糙度对击穿强度的影响
T. Okamoto, N. Hozumi, M. Ishida
{"title":"Breakdown strength affected by the interface roughness at the semiconducting layer in XLPE power cables","authors":"T. Okamoto, N. Hozumi, M. Ishida","doi":"10.1109/ICPADM.1991.172030","DOIUrl":"https://doi.org/10.1109/ICPADM.1991.172030","url":null,"abstract":"The authors describe the relationship between the breakdown strength and the roughness of the semiconducting interface in model XLPE (cross-linked polyethylene) power cables with insulation of 3.5 mm thickness. Nine kinds of specimen cables were manufactured out of seven kinds of semiconducting layer materials. Six kinds of additives were used to modify the semiconducting materials. The maximum breakdown strength of the specimens was about 1.6 MV/cm (1% Weibull strength) and 1.2 times higher than that of a specimen without additives. The semiconducting interface roughness of less than 1 mu m was quantized by taking transmission electron microscopic photographs of the interface. It was found that the roughness of the outer semiconducting interface is larger than that of the inner ones and has a strong correlation with the breakdown strength.<<ETX>>","PeriodicalId":6450,"journal":{"name":"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials","volume":"37 1","pages":"127-130 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1991-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75524907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Preliminary dimensioning of high voltage SF/sub 6/-insulated buses 高压SF/sub / 6绝缘母线的初步尺寸
Z. Gacek, G. Paszek
{"title":"Preliminary dimensioning of high voltage SF/sub 6/-insulated buses","authors":"Z. Gacek, G. Paszek","doi":"10.1109/ICPADM.1991.172112","DOIUrl":"https://doi.org/10.1109/ICPADM.1991.172112","url":null,"abstract":"A practical computational method for preliminary dimensioning of high voltage SF/sub 6/-insulated buses is proposed. The method is based on empirical data on the electric strength of a coaxial-cylinder electrode configuration. The computational procedure applied to the design of minimal gas clearances inside the 123 kV metal-class bus construction is presented by a way of example.<<ETX>>","PeriodicalId":6450,"journal":{"name":"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials","volume":"48 1","pages":"521-524 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1991-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76295726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The current state of dielectric application in Korea 韩国电介质的应用现状
J. Koo, Yongtian Kang, Dae-Seung Shin
{"title":"The current state of dielectric application in Korea","authors":"J. Koo, Yongtian Kang, Dae-Seung Shin","doi":"10.1109/ICPADM.1991.172124","DOIUrl":"https://doi.org/10.1109/ICPADM.1991.172124","url":null,"abstract":"Various insulating materials used for electric machinery manufactured in Korea are discussed with a view to presenting their variety and their demands in Korea. Considering the remarkable growth of heavy electric industries, the authors are convinced that there is a rather low localization rate of electric machinery throughout this work. It is suggested that this aspect might be due to the outmoded techniques of the industries which produce insulating materials.<<ETX>>","PeriodicalId":6450,"journal":{"name":"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials","volume":"68 1","pages":"576-581 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1991-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75649600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New technique for analysis of ageing data of insulation system 保温系统老化数据分析新技术
M.C. Ratra, S. Ganga, H.N. Nagamani
{"title":"New technique for analysis of ageing data of insulation system","authors":"M.C. Ratra, S. Ganga, H.N. Nagamani","doi":"10.1109/ICPADM.1991.172101","DOIUrl":"https://doi.org/10.1109/ICPADM.1991.172101","url":null,"abstract":"A survey of the literature reveals that the analysis of complete data on the ageing of insulation systems yields better results than the analysis of censored data. This argues in favor of the development of a new technique to convert censored data to complete data. The authors detail a novel technique developed for such conversion. It is shown that a spline technique could be adopted to construct complete data from censored data, as the results of experiments and the constructed failure times are in agreement. Results of ageing studies have been analyzed statistically using the maximum likelihood estimation approach, and results are presented.<<ETX>>","PeriodicalId":6450,"journal":{"name":"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials","volume":"45 1","pages":"477-479 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1991-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74583893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical ageing of polypropylene film 聚丙烯薄膜的电老化
W. Xin-sheng, T. De-min, Liu Zi-yu
{"title":"Electrical ageing of polypropylene film","authors":"W. Xin-sheng, T. De-min, Liu Zi-yu","doi":"10.1109/ICPADM.1991.172166","DOIUrl":"https://doi.org/10.1109/ICPADM.1991.172166","url":null,"abstract":"Accelerated tests of electrical aging for polypropylene film in vacuum and under uniform stress are reported. The results of the test show that the relation of electrical breakdown strength of the samples to the aging time can be expressed as t=KU/sup -n/. During the aging, infrared spectrometry, thermogravimetry, photoconductive spectrometry, and surface potential measurement are used to analyze the chemical structure, pyrolytic temperature, and deep trap density of the sample. The short groups and the terminals of scissored groups of the specimen and the trap density increase with the aging time. It is suggested that trap density may act as a new parameter which stands for the characteristic of the electrical aging of the material. The present study is significant for developing a new theory of electrical aging tests and replacing the destructive tests of electrical aging with nondestructive ones.<<ETX>>","PeriodicalId":6450,"journal":{"name":"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials","volume":"156 1","pages":"719-722 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1991-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74065926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Observation of electrostatic discharge between charged insulators 带电绝缘子间静电放电的观察
M. Matsui, N. Murasaki, K. Fujibayashi
{"title":"Observation of electrostatic discharge between charged insulators","authors":"M. Matsui, N. Murasaki, K. Fujibayashi","doi":"10.1109/ICPADM.1991.172078","DOIUrl":"https://doi.org/10.1109/ICPADM.1991.172078","url":null,"abstract":"Electrostatic discharge between two charged insulator disks facing their charged surfaces has been observed with a photographic camera. The pictures of the discharge light have shown a combination of a long but narrow streak passing on the negatively charged surface of the disk, a short streak on the positively charged surface, and a bridging streak between two disks.<<ETX>>","PeriodicalId":6450,"journal":{"name":"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials","volume":"35 1","pages":"385-388 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1991-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82083181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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