{"title":"Quantitative ultra shallow dopant profile measurement by scanning capacitance microscope","authors":"Y. Kikuchi, T. Kubo, M. Kase","doi":"10.1201/9781351074629-112","DOIUrl":"https://doi.org/10.1201/9781351074629-112","url":null,"abstract":"This paper compares scanning capacitance microscope (SCM) signals of an n-MOS transistor implanted with arsenic ions at an energy as low as 5 keV with a vertical secondary ion mass spectroscopy (SIMS) profile of the same device. Then, it describes SCM measurement by the application of a DC voltage sufficient to compensate for the flat band shift caused by the interaction between the probe of a conductive scanning probe microscope (SPM) and a silicon surface. To acquire the exact impurity distribution beneath a silicon surface, the SIMS measurement was carried out at a primary ion energy of less than 1 keV. As a result, the calibration of SCM signals using SIMS data was accomplished in the ultra shallow region near the silicon surface. It was also confirmed that the formalism based on the depletion approximation applies in this region. Using this formalism, we show that, at concentrations around 10 1 8 cm - 3 , SCM enables quantitative two-dimensional dopant profiling near the source/drain extension at a resolution of better than 10 nm. Moreover, by optimizing the sample preparation and measurement conditions, it is also possible to analyze a sub-μm gate transistor with a 60 nm channel length and investigate the complex dopant distribution in the source/drain region, including the edge of the shallow trench isolation.","PeriodicalId":55139,"journal":{"name":"Fujitsu Scientific & Technical Journal","volume":"19 1","pages":"75-81"},"PeriodicalIF":0.1,"publicationDate":"2002-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87995990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Laser welding of copper and copper alloys","authors":"K. Shimizu, K. Hashimoto","doi":"10.2351/1.4745272","DOIUrl":"https://doi.org/10.2351/1.4745272","url":null,"abstract":"We have developed a laser hermetic sealing technique that combines nickel plating with laser welding for copper and copper alloy bellows for general purpose large‐scale computers. Laser welding of copper has been difficult because of copper's high thermal conductivity and reflectivity. However, laser welding nickel‐plated copper results in deep penetration. To avoid corrosion induced at the dissimilar metal contact between nickel and copper, the nickel‐plated copper was heat‐treated before welding to obtain a nickel‐copper solid solution. Then, the optimum plating thickness and heat‐treatment conditions were determined. A 10 μm‐thick nickel plating, heat‐treated for 1 h at 1000°C was found to be best suited to laser welding. These conditions make the laser weld of copper and copper alloy strong. Tests indicate that this technique is suitable for laser welding copper and copper alloys.","PeriodicalId":55139,"journal":{"name":"Fujitsu Scientific & Technical Journal","volume":"103 1","pages":"310-315"},"PeriodicalIF":0.1,"publicationDate":"1991-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85844004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Perpendicular magnetic recording","authors":"J. Toda, K. Kiuchi, H. Wakamatsu","doi":"10.3379/jmsjmag.18.s2_5","DOIUrl":"https://doi.org/10.3379/jmsjmag.18.s2_5","url":null,"abstract":"","PeriodicalId":55139,"journal":{"name":"Fujitsu Scientific & Technical Journal","volume":"63 1","pages":"428-437"},"PeriodicalIF":0.1,"publicationDate":"1990-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85278344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Magnetic Properties and Ferromagnetic Shielding of Ni-Fe-Mo Alloys at Cryogenic Temperatures","authors":"Y. Suzuki, E. Horikoshi, K. Niwa","doi":"10.1007/978-1-4613-9868-4_54","DOIUrl":"https://doi.org/10.1007/978-1-4613-9868-4_54","url":null,"abstract":"","PeriodicalId":55139,"journal":{"name":"Fujitsu Scientific & Technical Journal","volume":"55 4 1","pages":"469-474"},"PeriodicalIF":0.1,"publicationDate":"1984-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83334475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
