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Opto-Electronics Review最新文献

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Dual-band absorption of a GaAs thin-film solar cell using a bilayer nano-antenna structure 采用双层纳米天线结构的砷化镓薄膜太阳能电池的双波段吸收
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/OPELRE.2020.134426
A. Khalaf, M. Gaballa
{"title":"Dual-band absorption of a GaAs thin-film solar cell using a bilayer nano-antenna structure","authors":"A. Khalaf, M. Gaballa","doi":"10.24425/OPELRE.2020.134426","DOIUrl":"https://doi.org/10.24425/OPELRE.2020.134426","url":null,"abstract":"Article history: Received 16 Apr. 2020 Received in revised form 16 Jul. 2020 Accepted 17 Jul. 2020 The paper presents a dual-band plasmonic solar cell. The proposed unit structure gathers two layers, each layer consists of a silver nanoparticle deposited on a GaAs substrate and covered with an ITO layer, It reveals two discrete absorption bands in the infra-red part of the solar spectrum. Nanoparticle structures have been used for lighttrapping to increase the absorption of plasmonic solar cells. By proper engineering of these structures, resonance frequencies and absorption coefficients can be controlled as it will be elucidated. The simulation results are achieved using CST Microwave Studio through the finite element method. The results indicate that this proposed dual-band plasmonic solar cell exhibits an absorption bandwidth, defined as the full width at half maximum, reaches 71 nm. Moreover, It can be noticed that by controlling the nanoparticle height above the GaAs substrate, the absorption peak can be increased to reach 0.77.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"16 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76577888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A flexible approach to combating chromatic dispersion in a centralized 5G network 在集中式5G网络中对抗色散的灵活方法
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/opelre.2020.132498
{"title":"A flexible approach to combating chromatic dispersion in a centralized 5G network","authors":"","doi":"10.24425/opelre.2020.132498","DOIUrl":"https://doi.org/10.24425/opelre.2020.132498","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"46 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81007700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Mixtures of selected n-alkanes and Au nanoparticels for optical fiber threshold temperature transducers 用于光纤阈值温度传感器的选定正构烷烃和金纳米粒子的混合物
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/OPELRE.2020.136111
N. Przybysz, P. Marć, E. Tomaszewska, J. Grobelny, L. Jaroszewicz
{"title":"Mixtures of selected n-alkanes and Au nanoparticels for optical fiber threshold temperature transducers","authors":"N. Przybysz, P. Marć, E. Tomaszewska, J. Grobelny, L. Jaroszewicz","doi":"10.24425/OPELRE.2020.136111","DOIUrl":"https://doi.org/10.24425/OPELRE.2020.136111","url":null,"abstract":"1. Opracowanie rekordu ze środkow MNiSW, umowa Nr 461252 w ramach programu \"Spoleczna odpowiedzialnośc nauki\" - modul: Popularyzacja nauki i promocja sportu (2021). 2. This work was financially supported by the Ministry of Science and Higher Education as a statutory activity of Technical Physics Applications Department of the Military University of Technology.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"26 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83770335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-pass RC filter modified by liquid crystal exhibiting one Debye relaxation - theoretical approach 液晶修饰的低通RC滤波器采用一种德拜弛豫理论方法
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/opelre.2022.141949
{"title":"Low-pass RC filter modified by liquid crystal exhibiting one Debye relaxation - theoretical approach","authors":"","doi":"10.24425/opelre.2022.141949","DOIUrl":"https://doi.org/10.24425/opelre.2022.141949","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"39 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90090361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Application of cross-correlation-based transimpedance amplifier in InAs and InAsSb IR detectors noise measurements 基于互关的透阻放大器在InAs和InAsSb红外探测器噪声测量中的应用
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/opelre.2022.141126
K. Achtenberg, J. Mikołajczyk, Z. Bielecki
{"title":"Application of cross-correlation-based transimpedance amplifier in InAs and InAsSb IR detectors noise measurements","authors":"K. Achtenberg, J. Mikołajczyk, Z. Bielecki","doi":"10.24425/opelre.2022.141126","DOIUrl":"https://doi.org/10.24425/opelre.2022.141126","url":null,"abstract":"The paper presents noise measurements in low-resistance photodetectors using a cross-correlation-based transimpedance amplifier. Such measurements usually apply a transimpedance amplifier design to provide a current fluctuation amplification. In the case of low-resistance sources, the measurement system causes additional relevant system noise which can be higher than noise generated in a tested detector. It mainly comes from the equivalent input voltage noise of the transimpedance amplifier. In this work, the unique circuit and a three-step procedure were used to reduce the floor noise, covering the measured infrared detector noise, mainly when operating with no-bias or low-bias voltage. The modified circuit and procedure to measure the noise of unbiased and biased detectors characterized by resistances much lower than 100 Ω were presented. Under low biases, the reference low-resistance resistors tested the measurement system operation and techniques. After the system verification, noise characteristics in low-resistance InAs and InAsSb infrared detectors were also measured.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"29 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89254306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of performance limits of HOT HgCdTe photodiodes with 2D material infrared photodetectors HOT HgCdTe光电二极管与二维材料红外探测器性能极限的比较
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/OPELRE.2020.132504
A. Rogalski, M. Kopytko, P. Martyniuk, Weida Hu
{"title":"Comparison of performance limits of HOT HgCdTe photodiodes with 2D material infrared photodetectors","authors":"A. Rogalski, M. Kopytko, P. Martyniuk, Weida Hu","doi":"10.24425/OPELRE.2020.132504","DOIUrl":"https://doi.org/10.24425/OPELRE.2020.132504","url":null,"abstract":"Article history: Received 24 Mar. 2020 Received in revised form 08 Apr. 2020 Accepted 08 Apr. 2020 The semiempirical rule, “Rule 07” specified in 2007 for P-on-n HgCdTe photodiodes has become widely popular within infrared community as a reference for other technologies, notably for III-V barrier photodetectors and type-II superlattice photodiodes. However, in the last decade in several papers it has been shown that the measured dark current density of HgCdTe photodiodes is considerably lower than predicted by benchmark Rule 07. Our theoretical estimates carried out in this paper support experimental data.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"113 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89392723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Review on thermoelectrical properties of selected imines in neat and multicomponent layers towards organic opto-electronics and photovoltaics 有机光电子与光电的整齐层与多组分层中选定亚胺的热电性能研究进展
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/opelre.2021.139754
K. Bogdanowicz, A. Iwan
{"title":"Review on thermoelectrical properties of selected imines in neat and multicomponent layers towards organic opto-electronics and photovoltaics","authors":"K. Bogdanowicz, A. Iwan","doi":"10.24425/opelre.2021.139754","DOIUrl":"https://doi.org/10.24425/opelre.2021.139754","url":null,"abstract":"The present review is mainly focused on the extended analysis of the results obtained from coupled measurement techniques of a thermal imaging camera and chronoamperometry for imines in undoped and doped states. This coupled technique allows to identify the current-voltage characteristics of thin films based on imine, as well as to assess layer defects in thermal images. Additional analysis of results provides further information regarding sample parameters, such as resistance, conductivity, thermal resistance, and Joule power heat correlated with increasing temperature. As can be concluded from this review, it is possible not only to study material properties at the supramolecular level, but also to tune macroscopic properties of  -conjugated systems. A detailed study of the structure-thermoelectrical properties in a series of eight unsymmetrical and symmetrical imines for the field of optoelectronics and photovoltaics has been undertaken. Apart from this molecular engineering, the imines properties were also tuned by supramolecular engineering via protonation with camphorsulfonic acid and by creation of bulk-heterojunction compositions based on poly(4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl-alt-3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophene-4,6-diyl) and/or [6,6]-phenyl-C71-butyric acid methyl ester, poly(3,4-ethylenedioxythiophene) towards the analysed donor or acceptor ability of imines in the active layer. The use of coupled measurement techniques of a thermal imaging camera and chronoamperometry allows obtaining comprehensive data on thermoelectric properties and defects indicating possible molecule rearrangement within the layer.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"60 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75652346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A simulation study of temperature effects on performance parameters of silicon heterojunction solar cells with different ITO/a-Si:H selective contacts 温度对不同ITO/ A - si:H选择触点硅异质结太阳能电池性能参数影响的模拟研究
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/opelre.2022.140557
{"title":"A simulation study of temperature effects on performance parameters of silicon heterojunction solar cells with different ITO/a-Si:H selective contacts","authors":"","doi":"10.24425/opelre.2022.140557","DOIUrl":"https://doi.org/10.24425/opelre.2022.140557","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"12 3 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79890448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electronic structure, stability, and strength of Cu–NiAl alloys: Experiment and DFT investigation Cu-NiAl合金的电子结构、稳定性和强度:实验和DFT研究
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/opelre.2022.141707
{"title":"Electronic structure, stability, and strength of Cu–NiAl alloys: Experiment and DFT investigation","authors":"","doi":"10.24425/opelre.2022.141707","DOIUrl":"https://doi.org/10.24425/opelre.2022.141707","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"155 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78136786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural, morphological and photoluminescent properties of annealed ZnO thin layers obtained by the rapid sol-gel spin-coating method 快速溶胶-凝胶自旋镀膜法制备的退火ZnO薄层的结构、形态和光致发光性能
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/opelre.2020.134460
M. Sypniewska, R. Szczęsny, P. Popielarski, K. Strzałkowski, B. Derkowska-Zielinska
{"title":"Structural, morphological and photoluminescent properties of annealed ZnO thin layers obtained by the rapid sol-gel spin-coating method","authors":"M. Sypniewska, R. Szczęsny, P. Popielarski, K. Strzałkowski, B. Derkowska-Zielinska","doi":"10.24425/opelre.2020.134460","DOIUrl":"https://doi.org/10.24425/opelre.2020.134460","url":null,"abstract":"Article history: Received 02 Jun. 2020 Received in revised form 27 Aug. 2020 Accepted 31 Aug. 2020 ZnO thin layers were deposited on p-type silicon substrates by the sol-gel spin-coating method and, then, annealed at various temperatures in the range of 573–873 K. Photoluminescence was carried out in the temperature range of 20–300 K. All samples showed two dominant peaks that have UV emissions from 300 nm to 400 nm and visible emissions from 400 nm to 800 nm. Influence of temperature on morphology and chemical composition of fabricated thin layers was examined by XRD, SEM, FTIR, and Raman spectroscopy. These measurements indicate that ZnO structure is obtained for samples annealed at temperatures above 573 K. It means that below this temperature, the obtained thin films are not pure zinc oxide. Thus, annealing temperature significantly affected crystallinity of the thin films.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"11 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81723541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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