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Adaptive and precise peak detection algorithm for fibre Bragg grating using generative adversarial network 基于生成对抗网络的光纤光栅自适应精确峰值检测算法
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/opelre.2022.144227
{"title":"Adaptive and precise peak detection algorithm for fibre Bragg grating using generative adversarial network","authors":"","doi":"10.24425/opelre.2022.144227","DOIUrl":"https://doi.org/10.24425/opelre.2022.144227","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"4 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89355549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A flexible approach to combating chromatic dispersion in a centralized 5G network 在集中式5G网络中对抗色散的灵活方法
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/opelre.2020.132498
{"title":"A flexible approach to combating chromatic dispersion in a centralized 5G network","authors":"","doi":"10.24425/opelre.2020.132498","DOIUrl":"https://doi.org/10.24425/opelre.2020.132498","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"46 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81007700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Mixtures of selected n-alkanes and Au nanoparticels for optical fiber threshold temperature transducers 用于光纤阈值温度传感器的选定正构烷烃和金纳米粒子的混合物
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/OPELRE.2020.136111
N. Przybysz, P. Marć, E. Tomaszewska, J. Grobelny, L. Jaroszewicz
{"title":"Mixtures of selected n-alkanes and Au nanoparticels for optical fiber threshold temperature transducers","authors":"N. Przybysz, P. Marć, E. Tomaszewska, J. Grobelny, L. Jaroszewicz","doi":"10.24425/OPELRE.2020.136111","DOIUrl":"https://doi.org/10.24425/OPELRE.2020.136111","url":null,"abstract":"1. Opracowanie rekordu ze środkow MNiSW, umowa Nr 461252 w ramach programu \"Spoleczna odpowiedzialnośc nauki\" - modul: Popularyzacja nauki i promocja sportu (2021). 2. This work was financially supported by the Ministry of Science and Higher Education as a statutory activity of Technical Physics Applications Department of the Military University of Technology.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"26 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83770335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-pass RC filter modified by liquid crystal exhibiting one Debye relaxation - theoretical approach 液晶修饰的低通RC滤波器采用一种德拜弛豫理论方法
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/opelre.2022.141949
{"title":"Low-pass RC filter modified by liquid crystal exhibiting one Debye relaxation - theoretical approach","authors":"","doi":"10.24425/opelre.2022.141949","DOIUrl":"https://doi.org/10.24425/opelre.2022.141949","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"39 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90090361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Application of cross-correlation-based transimpedance amplifier in InAs and InAsSb IR detectors noise measurements 基于互关的透阻放大器在InAs和InAsSb红外探测器噪声测量中的应用
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/opelre.2022.141126
K. Achtenberg, J. Mikołajczyk, Z. Bielecki
{"title":"Application of cross-correlation-based transimpedance amplifier in InAs and InAsSb IR detectors noise measurements","authors":"K. Achtenberg, J. Mikołajczyk, Z. Bielecki","doi":"10.24425/opelre.2022.141126","DOIUrl":"https://doi.org/10.24425/opelre.2022.141126","url":null,"abstract":"The paper presents noise measurements in low-resistance photodetectors using a cross-correlation-based transimpedance amplifier. Such measurements usually apply a transimpedance amplifier design to provide a current fluctuation amplification. In the case of low-resistance sources, the measurement system causes additional relevant system noise which can be higher than noise generated in a tested detector. It mainly comes from the equivalent input voltage noise of the transimpedance amplifier. In this work, the unique circuit and a three-step procedure were used to reduce the floor noise, covering the measured infrared detector noise, mainly when operating with no-bias or low-bias voltage. The modified circuit and procedure to measure the noise of unbiased and biased detectors characterized by resistances much lower than 100 Ω were presented. Under low biases, the reference low-resistance resistors tested the measurement system operation and techniques. After the system verification, noise characteristics in low-resistance InAs and InAsSb infrared detectors were also measured.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"29 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89254306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of performance limits of HOT HgCdTe photodiodes with 2D material infrared photodetectors HOT HgCdTe光电二极管与二维材料红外探测器性能极限的比较
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/OPELRE.2020.132504
A. Rogalski, M. Kopytko, P. Martyniuk, Weida Hu
{"title":"Comparison of performance limits of HOT HgCdTe photodiodes with 2D material infrared photodetectors","authors":"A. Rogalski, M. Kopytko, P. Martyniuk, Weida Hu","doi":"10.24425/OPELRE.2020.132504","DOIUrl":"https://doi.org/10.24425/OPELRE.2020.132504","url":null,"abstract":"Article history: Received 24 Mar. 2020 Received in revised form 08 Apr. 2020 Accepted 08 Apr. 2020 The semiempirical rule, “Rule 07” specified in 2007 for P-on-n HgCdTe photodiodes has become widely popular within infrared community as a reference for other technologies, notably for III-V barrier photodetectors and type-II superlattice photodiodes. However, in the last decade in several papers it has been shown that the measured dark current density of HgCdTe photodiodes is considerably lower than predicted by benchmark Rule 07. Our theoretical estimates carried out in this paper support experimental data.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"113 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89392723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
A simulation study of temperature effects on performance parameters of silicon heterojunction solar cells with different ITO/a-Si:H selective contacts 温度对不同ITO/ A - si:H选择触点硅异质结太阳能电池性能参数影响的模拟研究
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/opelre.2022.140557
{"title":"A simulation study of temperature effects on performance parameters of silicon heterojunction solar cells with different ITO/a-Si:H selective contacts","authors":"","doi":"10.24425/opelre.2022.140557","DOIUrl":"https://doi.org/10.24425/opelre.2022.140557","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"12 3 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79890448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Al2O3/TiO2 double antireflection coating deposited by ALD method ALD法制备Al2O3/TiO2双增透涂层
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/opelre.2022.141952
{"title":"The Al2O3/TiO2 double antireflection coating deposited by ALD method","authors":"","doi":"10.24425/opelre.2022.141952","DOIUrl":"https://doi.org/10.24425/opelre.2022.141952","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"75 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83281257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Review on thermoelectrical properties of selected imines in neat and multicomponent layers towards organic opto-electronics and photovoltaics 有机光电子与光电的整齐层与多组分层中选定亚胺的热电性能研究进展
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/opelre.2021.139754
K. Bogdanowicz, A. Iwan
{"title":"Review on thermoelectrical properties of selected imines in neat and multicomponent layers towards organic opto-electronics and photovoltaics","authors":"K. Bogdanowicz, A. Iwan","doi":"10.24425/opelre.2021.139754","DOIUrl":"https://doi.org/10.24425/opelre.2021.139754","url":null,"abstract":"The present review is mainly focused on the extended analysis of the results obtained from coupled measurement techniques of a thermal imaging camera and chronoamperometry for imines in undoped and doped states. This coupled technique allows to identify the current-voltage characteristics of thin films based on imine, as well as to assess layer defects in thermal images. Additional analysis of results provides further information regarding sample parameters, such as resistance, conductivity, thermal resistance, and Joule power heat correlated with increasing temperature. As can be concluded from this review, it is possible not only to study material properties at the supramolecular level, but also to tune macroscopic properties of  -conjugated systems. A detailed study of the structure-thermoelectrical properties in a series of eight unsymmetrical and symmetrical imines for the field of optoelectronics and photovoltaics has been undertaken. Apart from this molecular engineering, the imines properties were also tuned by supramolecular engineering via protonation with camphorsulfonic acid and by creation of bulk-heterojunction compositions based on poly(4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl-alt-3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophene-4,6-diyl) and/or [6,6]-phenyl-C71-butyric acid methyl ester, poly(3,4-ethylenedioxythiophene) towards the analysed donor or acceptor ability of imines in the active layer. The use of coupled measurement techniques of a thermal imaging camera and chronoamperometry allows obtaining comprehensive data on thermoelectric properties and defects indicating possible molecule rearrangement within the layer.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"60 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75652346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Electronic structure, stability, and strength of Cu–NiAl alloys: Experiment and DFT investigation Cu-NiAl合金的电子结构、稳定性和强度:实验和DFT研究
IF 1.6 4区 工程技术
Opto-Electronics Review Pub Date : 2023-04-01 DOI: 10.24425/opelre.2022.141707
{"title":"Electronic structure, stability, and strength of Cu–NiAl alloys: Experiment and DFT investigation","authors":"","doi":"10.24425/opelre.2022.141707","DOIUrl":"https://doi.org/10.24425/opelre.2022.141707","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"155 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78136786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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