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A LOW POWER DUAL-MODE Reconfigurable SIGMA-DELTA MODULATOR DESIGN FOR GSM / WCDMA STANDARDS 针对 GSM / WCDMA 标准的低功耗双模可重构 SIGMA-DELTA 调制解调器设计
Journal of Association of Electrical and Electronics Engineers Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.77
Majeed Charoosaei, K. Monfaredi, M. Yousefi
{"title":"A LOW POWER DUAL-MODE Reconfigurable SIGMA-DELTA MODULATOR DESIGN FOR GSM / WCDMA STANDARDS","authors":"Majeed Charoosaei, K. Monfaredi, M. Yousefi","doi":"10.61186/jiaeee.21.1.77","DOIUrl":"https://doi.org/10.61186/jiaeee.21.1.77","url":null,"abstract":"","PeriodicalId":517602,"journal":{"name":"Journal of Association of Electrical and Electronics Engineers","volume":"300 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140402590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Prediction of effective management of electronic banking in the ease of transmitting information using data mining techniques 利用数据挖掘技术预测电子银行有效管理信息传输的难易程度
Journal of Association of Electrical and Electronics Engineers Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.121
Mahdi Sahandjami, Morteza Morteza Mohammadi Zanjireh, Mahdi Bahaghighat, Morteza Hadizadeh
{"title":"Prediction of effective management of electronic banking in the ease of transmitting information using data mining techniques","authors":"Mahdi Sahandjami, Morteza Morteza Mohammadi Zanjireh, Mahdi Bahaghighat, Morteza Hadizadeh","doi":"10.61186/jiaeee.21.1.121","DOIUrl":"https://doi.org/10.61186/jiaeee.21.1.121","url":null,"abstract":"","PeriodicalId":517602,"journal":{"name":"Journal of Association of Electrical and Electronics Engineers","volume":"57 32","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140399963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of the effect of size, material, position and period of metal nanowires on the performance of thin film solar cells 分析金属纳米线的尺寸、材料、位置和周期对薄膜太阳能电池性能的影响
Journal of Association of Electrical and Electronics Engineers Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.47
Mohammad Eskandari, Amir Habibzadeh-Sharif, Behnam Mohammadi
{"title":"Analysis of the effect of size, material, position and period of metal nanowires on the performance of thin film solar cells","authors":"Mohammad Eskandari, Amir Habibzadeh-Sharif, Behnam Mohammadi","doi":"10.61186/jiaeee.21.1.47","DOIUrl":"https://doi.org/10.61186/jiaeee.21.1.47","url":null,"abstract":"","PeriodicalId":517602,"journal":{"name":"Journal of Association of Electrical and Electronics Engineers","volume":"291 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140402671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of the Effects of Temperature and Vertical Electric Field on the Propagation of Transverse Electric Waves in Silicene Monolayer 温度和垂直电场对硅单层中横向电波传播的影响分析
Journal of Association of Electrical and Electronics Engineers Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.55
Hamed Emami Nejad, A. Mir, A. Farmani, R. Talebzadeh
{"title":"Analysis of the Effects of Temperature and Vertical Electric Field on the Propagation of Transverse Electric Waves in Silicene Monolayer","authors":"Hamed Emami Nejad, A. Mir, A. Farmani, R. Talebzadeh","doi":"10.61186/jiaeee.21.1.55","DOIUrl":"https://doi.org/10.61186/jiaeee.21.1.55","url":null,"abstract":"","PeriodicalId":517602,"journal":{"name":"Journal of Association of Electrical and Electronics Engineers","volume":"67 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140403349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-wideband low noise amplifier using resistive feedback and current reause 使用电阻反馈和电流抑制的超宽带低噪声放大器
Journal of Association of Electrical and Electronics Engineers Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.97
Shirin Saraslani, Abbas Golmakani
{"title":"Ultra-wideband low noise amplifier using resistive feedback and current reause","authors":"Shirin Saraslani, Abbas Golmakani","doi":"10.61186/jiaeee.21.1.97","DOIUrl":"https://doi.org/10.61186/jiaeee.21.1.97","url":null,"abstract":"","PeriodicalId":517602,"journal":{"name":"Journal of Association of Electrical and Electronics Engineers","volume":"189 ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140286944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Presentation of Multi Inputs Full Ternary Comparator with Carbon Nano Tube Field Effect Transistor 介绍使用碳纳米管场效应晶体管的多输入全三元比较器
Journal of Association of Electrical and Electronics Engineers Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.1
M. Yousefi
{"title":"Presentation of Multi Inputs Full Ternary Comparator with Carbon Nano Tube Field Effect Transistor","authors":"M. Yousefi","doi":"10.61186/jiaeee.21.1.1","DOIUrl":"https://doi.org/10.61186/jiaeee.21.1.1","url":null,"abstract":"","PeriodicalId":517602,"journal":{"name":"Journal of Association of Electrical and Electronics Engineers","volume":"84 S22","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140401530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel Capacitance Model to Compute Front- and Back-Gate Threshold Voltage of Double Insulating Silicon-on-Diamond MOSFET 计算双绝缘金刚石上硅 MOSFET 前后栅阈值电压的新型电容模型
Journal of Association of Electrical and Electronics Engineers Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.39
Afshin Dadkhah, A. Daghighi
{"title":"A Novel Capacitance Model to Compute Front- and Back-Gate Threshold Voltage of Double Insulating Silicon-on-Diamond MOSFET","authors":"Afshin Dadkhah, A. Daghighi","doi":"10.61186/jiaeee.21.1.39","DOIUrl":"https://doi.org/10.61186/jiaeee.21.1.39","url":null,"abstract":"","PeriodicalId":517602,"journal":{"name":"Journal of Association of Electrical and Electronics Engineers","volume":"69 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140407377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quasi-floating gate MOSFET-based low power current mirror 基于准浮栅 MOSFET 的低功耗电流镜
Journal of Association of Electrical and Electronics Engineers Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.27
Masoud nori, Mehdi Bekrani
{"title":"Quasi-floating gate MOSFET-based low power current mirror","authors":"Masoud nori, Mehdi Bekrani","doi":"10.61186/jiaeee.21.1.27","DOIUrl":"https://doi.org/10.61186/jiaeee.21.1.27","url":null,"abstract":"","PeriodicalId":517602,"journal":{"name":"Journal of Association of Electrical and Electronics Engineers","volume":"74 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140399397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Analytical Computation of Threshold Voltage for Ultra-Thin Double Insulating Silicon-on-Diamond MOSFET 超薄双绝缘金刚石上硅 MOSFET 阈值电压的分析计算
Journal of Association of Electrical and Electronics Engineers Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.17
Majid HeidarZadeh, A. Daghighi, Zahra Sepehri
{"title":"An Analytical Computation of Threshold Voltage for Ultra-Thin Double Insulating Silicon-on-Diamond MOSFET","authors":"Majid HeidarZadeh, A. Daghighi, Zahra Sepehri","doi":"10.61186/jiaeee.21.1.17","DOIUrl":"https://doi.org/10.61186/jiaeee.21.1.17","url":null,"abstract":"","PeriodicalId":517602,"journal":{"name":"Journal of Association of Electrical and Electronics Engineers","volume":"188 ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140286488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis, design and implementation of a new high step-up DC-DC converter with active coupled inductor network for a sustainable energy system 为可持续能源系统分析、设计和实现带主动耦合电感网络的新型高升压直流-直流转换器
Journal of Association of Electrical and Electronics Engineers Pub Date : 2024-03-01 DOI: 10.61186/jiaeee.21.1.85
Fatemeh Parin, Ebrahim Farshidi, R. Fani
{"title":"Analysis, design and implementation of a new high step-up DC-DC converter with active coupled inductor network for a sustainable energy system","authors":"Fatemeh Parin, Ebrahim Farshidi, R. Fani","doi":"10.61186/jiaeee.21.1.85","DOIUrl":"https://doi.org/10.61186/jiaeee.21.1.85","url":null,"abstract":"","PeriodicalId":517602,"journal":{"name":"Journal of Association of Electrical and Electronics Engineers","volume":"28 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140398900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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