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Pb2+- and Sn2+-Doped (1-Phenylpiperazine)ZnBr4 Single Crystal with Highly Efficient Light Emission 掺杂 Pb2+- 和 Sn2+ 的 (1-Phenylpiperazine)ZnBr4 单晶具有高效发光性能
Journal of Electronic Materials Pub Date : 2024-08-10 DOI: 10.1007/s11664-024-11362-9
Yang Cao, Yong Zhang, Wei Wei, Chen Wang, Xiaoyu Zhao, Xudan Chen, Zhenhao Lu
{"title":"Pb2+- and Sn2+-Doped (1-Phenylpiperazine)ZnBr4 Single Crystal with Highly Efficient Light Emission","authors":"Yang Cao, Yong Zhang, Wei Wei, Chen Wang, Xiaoyu Zhao, Xudan Chen, Zhenhao Lu","doi":"10.1007/s11664-024-11362-9","DOIUrl":"https://doi.org/10.1007/s11664-024-11362-9","url":null,"abstract":"","PeriodicalId":506265,"journal":{"name":"Journal of Electronic Materials","volume":"8 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141920633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of Partial Substitution of Sn by Si on the Electrical, Mechanical, and Magnetic Properties of Ni44Mn44Sn12 Heusler Alloys 用 Si 部分替代 Sn 对 Ni44Mn44Sn12 Heusler 合金的电气、机械和磁性能的影响
Journal of Electronic Materials Pub Date : 2024-08-09 DOI: 10.1007/s11664-024-11356-7
Ariely V. B. Lima, Debóra Moura da Silva, Adelaide C. Mélo, Tibério Andrade dos Passos, R. Torquato, Danniel Ferreira de Oliveira
{"title":"Influence of Partial Substitution of Sn by Si on the Electrical, Mechanical, and Magnetic Properties of Ni44Mn44Sn12 Heusler Alloys","authors":"Ariely V. B. Lima, Debóra Moura da Silva, Adelaide C. Mélo, Tibério Andrade dos Passos, R. Torquato, Danniel Ferreira de Oliveira","doi":"10.1007/s11664-024-11356-7","DOIUrl":"https://doi.org/10.1007/s11664-024-11356-7","url":null,"abstract":"","PeriodicalId":506265,"journal":{"name":"Journal of Electronic Materials","volume":"4 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141921927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance Enhancement of P3HT-Based OFET Using Ca-Doped ZnO Nanoparticles 使用掺钙氧化锌纳米粒子提高基于 P3HT 的 OFET 性能
Journal of Electronic Materials Pub Date : 2024-08-09 DOI: 10.1007/s11664-024-11357-6
M. Erouel, Salaheddine Mansouri, A. Diallo, Lassaad El Mir
{"title":"Performance Enhancement of P3HT-Based OFET Using Ca-Doped ZnO Nanoparticles","authors":"M. Erouel, Salaheddine Mansouri, A. Diallo, Lassaad El Mir","doi":"10.1007/s11664-024-11357-6","DOIUrl":"https://doi.org/10.1007/s11664-024-11357-6","url":null,"abstract":"","PeriodicalId":506265,"journal":{"name":"Journal of Electronic Materials","volume":"63 17","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141923035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Full Electronic Band Structure Characterization of Al-Doped ZnO Nanocrystalline Films Through Simulation 通过仿真分析掺铝氧化锌纳米晶薄膜的全电子能带结构特性
Journal of Electronic Materials Pub Date : 2024-08-08 DOI: 10.1007/s11664-024-11331-2
P. K. Saxena, A. Srivastava
{"title":"Full Electronic Band Structure Characterization of Al-Doped ZnO Nanocrystalline Films Through Simulation","authors":"P. K. Saxena, A. Srivastava","doi":"10.1007/s11664-024-11331-2","DOIUrl":"https://doi.org/10.1007/s11664-024-11331-2","url":null,"abstract":"","PeriodicalId":506265,"journal":{"name":"Journal of Electronic Materials","volume":"24 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141927139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical Simulation of Waveguide Propagation Loss on Directly Bonded InP/Si Substrate 直接键合 InP/Si 基底上波导传播损耗的数值模拟
Journal of Electronic Materials Pub Date : 2024-07-16 DOI: 10.1007/s11664-024-11318-z
Liang Zhao, Koji Agata, Ryosuke Yada, Kazuhiko Shimomura
{"title":"Numerical Simulation of Waveguide Propagation Loss on Directly Bonded InP/Si Substrate","authors":"Liang Zhao, Koji Agata, Ryosuke Yada, Kazuhiko Shimomura","doi":"10.1007/s11664-024-11318-z","DOIUrl":"https://doi.org/10.1007/s11664-024-11318-z","url":null,"abstract":"","PeriodicalId":506265,"journal":{"name":"Journal of Electronic Materials","volume":"11 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141641284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrochemical Investigation of Magnesium-Doped Copper Ferrite Nanostructures for Asymmetric Supercapacitor Applications 用于不对称超级电容器的掺镁铁氧体铜纳米结构的电化学研究
Journal of Electronic Materials Pub Date : 2024-07-15 DOI: 10.1007/s11664-024-11293-5
M. Selvakumar, S. Maruthamuthu, E. Vijayakumar, B. Saravanakumar, A. Tony Dhiwahar
{"title":"Electrochemical Investigation of Magnesium-Doped Copper Ferrite Nanostructures for Asymmetric Supercapacitor Applications","authors":"M. Selvakumar, S. Maruthamuthu, E. Vijayakumar, B. Saravanakumar, A. Tony Dhiwahar","doi":"10.1007/s11664-024-11293-5","DOIUrl":"https://doi.org/10.1007/s11664-024-11293-5","url":null,"abstract":"","PeriodicalId":506265,"journal":{"name":"Journal of Electronic Materials","volume":"12 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141648697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of Dye Loading on Photoanodes of Dye-Sensitized Solar Cells Utilizing a Mixture of TiO2 and Magnesium/Aluminum Layered Double Hydroxide (LDH) 利用二氧化钛和镁/铝层状双氢氧化物（LDH）混合物的染料敏化太阳能电池光阳极上的染料负载评估
Journal of Electronic Materials Pub Date : 2024-07-15 DOI: 10.1007/s11664-024-11211-9
K. Al-Salihi
{"title":"Evaluation of Dye Loading on Photoanodes of Dye-Sensitized Solar Cells Utilizing a Mixture of TiO2 and Magnesium/Aluminum Layered Double Hydroxide (LDH)","authors":"K. Al-Salihi","doi":"10.1007/s11664-024-11211-9","DOIUrl":"https://doi.org/10.1007/s11664-024-11211-9","url":null,"abstract":"","PeriodicalId":506265,"journal":{"name":"Journal of Electronic Materials","volume":"48 16","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141648989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Impact of Interfacial Recombination on Hysteresis in Back-Contact Perovskite Solar Cells 面间重组对背接触包光体太阳能电池磁滞的影响
Journal of Electronic Materials Pub Date : 2024-07-15 DOI: 10.1007/s11664-024-11308-1
Peidong Tian, Yanyan Chang, Shulong Lu, Lian Ji
{"title":"The Impact of Interfacial Recombination on Hysteresis in Back-Contact Perovskite Solar Cells","authors":"Peidong Tian, Yanyan Chang, Shulong Lu, Lian Ji","doi":"10.1007/s11664-024-11308-1","DOIUrl":"https://doi.org/10.1007/s11664-024-11308-1","url":null,"abstract":"","PeriodicalId":506265,"journal":{"name":"Journal of Electronic Materials","volume":"19 16","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141645950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Correction: Impact of Pocket Layer on Linearity and Analog/RF Performance of InAs-GaSb Vertical Tunnel Field-Effect Transistor 更正：封装层对 InAs-GaSb 垂直隧道场效应晶体管线性和模拟/射频性能的影响
Journal of Electronic Materials Pub Date : 2024-07-09 DOI: 10.1007/s11664-024-11305-4
M. Saravanan, E. Parthasarathy
{"title":"Correction: Impact of Pocket Layer on Linearity and Analog/RF Performance of InAs-GaSb Vertical Tunnel Field-Effect Transistor","authors":"M. Saravanan, E. Parthasarathy","doi":"10.1007/s11664-024-11305-4","DOIUrl":"https://doi.org/10.1007/s11664-024-11305-4","url":null,"abstract":"","PeriodicalId":506265,"journal":{"name":"Journal of Electronic Materials","volume":"121 35","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141666214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparative Study of BaSnO3 and TiO2-Based Dye Sensitized Solar Cells Utilizing Complex Ruthenium-Derived N719 Dye 利用复合钌衍生 N719 染料的 BaSnO3 和 TiO2 染料敏化太阳能电池比较研究
Journal of Electronic Materials Pub Date : 2024-06-15 DOI: 10.1007/s11664-024-11231-5
Kaushlendra Pandey, S. Chauhan, Manoj Kumar
{"title":"Comparative Study of BaSnO3 and TiO2-Based Dye Sensitized Solar Cells Utilizing Complex Ruthenium-Derived N719 Dye","authors":"Kaushlendra Pandey, S. Chauhan, Manoj Kumar","doi":"10.1007/s11664-024-11231-5","DOIUrl":"https://doi.org/10.1007/s11664-024-11231-5","url":null,"abstract":"","PeriodicalId":506265,"journal":{"name":"Journal of Electronic Materials","volume":"7 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141337064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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