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A 28 GHz Band Compact LTCC Filtering Antenna with Extracted-Pole Unit for Dual Polarization 一种具有双极化提取极单元的28ghz频段紧凑LTCC滤波天线
IF 0.5 4区 工程技术
IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2023mmi0002
K. Sudo, Ryo Mikase, Y. Taguchi, Koichi Takizawa, Yosuke Sato, Kazushige Sato, Hisao Hayafuji, M. Ohira
{"title":"A 28 GHz Band Compact LTCC Filtering Antenna with Extracted-Pole Unit for Dual Polarization","authors":"K. Sudo, Ryo Mikase, Y. Taguchi, Koichi Takizawa, Yosuke Sato, Kazushige Sato, Hisao Hayafuji, M. Ohira","doi":"10.1587/transele.2023mmi0002","DOIUrl":"https://doi.org/10.1587/transele.2023mmi0002","url":null,"abstract":"SUMMARY This paper proposes a dual-polarized filtering antenna with extracted-pole unit (EPU) using LTCC substrate. The EPU realizes the high skirt characteristic of the bandpass filter with transmission zeros (TZs) located near the passband without cross coupling. The filtering antenna with EPU is designed and fabricated in 28 GHz band for 5G Band-n257 (26.5-29.5 GHz). The measured S 11 is less than -10.6 dB in Band-n257, and the isolation between two ports for dual polarization is greater than 20.0 dB. The measured peak antenna gain is 4.0 dBi at 28.8 GHz and the gain is larger than 2.5 dBi in Band-n257. The frequency characteristics of the measured antenna gain shows the high skirt characteristic out of band, which are in good agreement with electromagnetic (EM)-simulated results.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of a dual-band load-modulated sequential amplifier with extended back-off 带扩展回退的双频负载调制顺序放大器的设计
IF 0.5 4区 工程技术
IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2023ecs6002
Minghui You, Guohua Liu, Zhiqun Cheng
{"title":"Design of a dual-band load-modulated sequential amplifier with extended back-off","authors":"Minghui You, Guohua Liu, Zhiqun Cheng","doi":"10.1587/transele.2023ecs6002","DOIUrl":"https://doi.org/10.1587/transele.2023ecs6002","url":null,"abstract":"","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
300-GHz-Band Dual-Band Bandstop Filter Based on Two Different Sized Split Ring Resonators 基于两种不同尺寸分环谐振器的300 ghz频段双频带阻滤波器
4区 工程技术
IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2023ecp5004
Akihiko Hirata
{"title":"300-GHz-Band Dual-Band Bandstop Filter Based on Two Different Sized Split Ring Resonators","authors":"Akihiko Hirata","doi":"10.1587/transele.2023ecp5004","DOIUrl":"https://doi.org/10.1587/transele.2023ecp5004","url":null,"abstract":"For 6G mobile communications, it is important to realize a 300 GHz bandpass filter that fits the occupied bandwidth of wireless communication system to prevent inter-system interference. This paper presents the design of a 300-GHz-band dual-band bandstop filter composed of two types of different sized split ring resonator (SRR) unit cells. The SRR unit cells are formed by a 5-μm-thick gold pattern on a 200-μm-thick quartz substrate. When two different-sized SRR unit cells are placed alternately on the same quartz substrate and the SRR unit cell size is over 260 μm, the stopbands of the dual-band bandstop filter are almost the same as those of the bandstop filter, which is composed of a single SRR unit cell. The insertion loss of the dual-band bandstop filter at 297.4 GHz is 1.8 dB and the 3-dB passband becomes 16.0 GHz (290.4-306.4 GHz). The attenuation in the two stopbands is greater than 20 dB. Six types of dual-band bandstop filters with different arrangement and different distance between SRR unit cells are prototyped, and the effect of the distance and arrangement between different sized SRR unit cells on the transmission characteristics of dual-band bandstop filters were clarified.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136257175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of CMOS Circuits for Electrophysiology 电生理CMOS电路的设计
IF 0.5 4区 工程技术
IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2022cti0003
N. V. Helleputte, Carolina Mora Lopez, C. Hoof
{"title":"Design of CMOS Circuits for Electrophysiology","authors":"N. V. Helleputte, Carolina Mora Lopez, C. Hoof","doi":"10.1587/transele.2022cti0003","DOIUrl":"https://doi.org/10.1587/transele.2022cti0003","url":null,"abstract":"SUMMARY Electrophysiology, which is the study of the electrical properties of biological tissues and cells, has become indispensable in modern clinical research, diagnostics, disease monitoring and therapeutics. In this paper we present a brief history of this discipline and how integrated circuit design shaped electrophysiology in the last few decades. We will discuss how biopotential amplifier design has evolved from the classical three-opamp architecture to more advanced high-performance circuits enabling long-term wearable monitoring of the autonomous and central nervous system. We will also discuss how these integrated circuits evolved to measure in-vivo neural circuits. This paper targets readers who are new to the domain of biopotential recording and want to get a brief historical overview and get up to speed on the main circuit design concepts for both wearable and in-vivo biopotential recording.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermoelectric effect of Ga-Sn-O thin films for internet-of-things application 物联网应用中Ga-Sn-O薄膜的热电效应
IF 0.5 4区 工程技术
IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2023ecs6005
Yuhei Yamamoto, Naoki Shibata, T. Matsuda, Hidenori Kawanishi, Mutsumi Kimura
{"title":"Thermoelectric effect of Ga-Sn-O thin films for internet-of-things application","authors":"Yuhei Yamamoto, Naoki Shibata, T. Matsuda, Hidenori Kawanishi, Mutsumi Kimura","doi":"10.1587/transele.2023ecs6005","DOIUrl":"https://doi.org/10.1587/transele.2023ecs6005","url":null,"abstract":"","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Design Method of Transmission-type Metasurfaces Using Circuit Synthesis Theory of Microwave Bandpass Filters 基于微波带通滤波器电路综合理论的透射型超表面设计方法
IF 0.5 4区 工程技术
IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2023mmi0001
H. Yoshikawa, N. Hiramatsu, Masamichi Yonehara, H. Nakano
{"title":"A Design Method of Transmission-type Metasurfaces Using Circuit Synthesis Theory of Microwave Bandpass Filters","authors":"H. Yoshikawa, N. Hiramatsu, Masamichi Yonehara, H. Nakano","doi":"10.1587/transele.2023mmi0001","DOIUrl":"https://doi.org/10.1587/transele.2023mmi0001","url":null,"abstract":"SUMMARY In this paper, we applied the circuit synthesis theory of filters to the design of transmission-type metasurface cells and arbitrarily designed the amplitude and phase of the transmission and reflection by adjusting the resonant frequency and coupling coe ffi cient. In addition, we successfully designed the phase of the unit cell by using the frequency conversion of filter theory. Moreover, we designed a refractive transmission-type metasurface plate with a novel cell structure that reacts to both polarizations. The prototype operated at the desired refraction angle, confirming the design theory. key words: metasurface, transmission-type, refraction, filter theory, band-pass filter","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Tunable Dielectric Resonator Oscillator with Phase-Locked Loop Stabilization for THz Time Domain Spectroscopy Systems 一种用于太赫兹时域光谱系统的锁相环可调谐介电谐振振荡器
IF 0.5 4区 工程技术
IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2023mms0004
Robin Kaesbach, M. V. Delden, T. Musch
{"title":"A Tunable Dielectric Resonator Oscillator with Phase-Locked Loop Stabilization for THz Time Domain Spectroscopy Systems","authors":"Robin Kaesbach, M. V. Delden, T. Musch","doi":"10.1587/transele.2023mms0004","DOIUrl":"https://doi.org/10.1587/transele.2023mms0004","url":null,"abstract":"SUMMARY Precision microwave measurement systems require highly stable oscillators with both excellent long-term and short-term stability. Compared to components used in laboratory instruments, dielectric resonator oscillators (DRO) offer low phase noise with greatly reduced mechanical complexity. To further enhance performance, phase-locked loop (PLL) stabilization can be used to eliminate drift and provide precise frequency control. In this work, the design of a low-cost DRO concept is presented and its performance is evaluated through simulations and measurements. An open-loop phase noise of − 107 . 2dBc / Hz at 10kHz offset frequency and 12 . 8GHz output frequency is demonstrated. Drift and phase noise are reduced by a PLL, so that a very low jitter of under 29 . 6fs is achieved over the entire operating bandwidth.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67307382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel Displacement Sensor Based on a Frequency Delta-Sigma Modulator and its Application to a Stylus Surface Profiler 基于频率δ - σ调制器的新型位移传感器及其在触控笔表面轮廓仪上的应用
IF 0.5 4区 工程技术
IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2022ecs6013
K. Maezawa, Umer Farooq, M. Mori
{"title":"A Novel Displacement Sensor Based on a Frequency Delta-Sigma Modulator and its Application to a Stylus Surface Profiler","authors":"K. Maezawa, Umer Farooq, M. Mori","doi":"10.1587/transele.2022ecs6013","DOIUrl":"https://doi.org/10.1587/transele.2022ecs6013","url":null,"abstract":"","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental Exploration of the Backside ESD Impacts on an IC Chip in Flip Chip Packaging 倒装封装中IC芯片背面ESD影响的实验研究
IF 0.5 4区 工程技术
IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2022ctp0004
Takuya Wadatsumi, Kohei Kawai, Rikuu Hasegawa, K. Muramatsu, Hiromu Hasegawa, T. Sawada, Takahito Fukushima, Hisashi Kondo, Takuji Miki, M. Nagata
{"title":"Experimental Exploration of the Backside ESD Impacts on an IC Chip in Flip Chip Packaging","authors":"Takuya Wadatsumi, Kohei Kawai, Rikuu Hasegawa, K. Muramatsu, Hiromu Hasegawa, T. Sawada, Takahito Fukushima, Hisashi Kondo, Takuji Miki, M. Nagata","doi":"10.1587/transele.2022ctp0004","DOIUrl":"https://doi.org/10.1587/transele.2022ctp0004","url":null,"abstract":"SUMMARY This paper presents on-chip characterization of electrostatic discharge (ESD) impacts applied on the Si-substrate backside of a flip-chip mounted integrated circuit (FC-IC) chip. An FC-IC chip has an open backside and there is a threat of reliability problems and malfunctions caused by the backside ESD. We prepared a test FC-IC chip and measured Si-substrate voltage fluctuations on its frontside by an on-chip monitor (OCM) circuit. The voltage surges as large as 200 mV were observed on the frontside when a 200-V ESD gun was irradiated through a 5 kΩ contact resistor on the backside of a 350 µm thick Si substrate. The distribution of voltage heights was experimentally measured at 20 on-chip locations among thinned Si substrates up to 40 µm, and also explained in full-system level simulation of backside ESD impacts with the equivalent models of ESD-gun operation and FC-IC chip assembly.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist 采用负色调抗蚀剂的电子束光刻制造的物理定义硅量子点器件的单电子晶体管操作
IF 0.5 4区 工程技术
IEICE Transactions on Electronics Pub Date : 2023-01-01 DOI: 10.1587/transele.2022fus0002
S. Nishiyama, Kimihiko Kato, Yongxun Liu, R. Mizokuchi, J. Yoneda, T. Kodera, T. Mori
{"title":"Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist","authors":"S. Nishiyama, Kimihiko Kato, Yongxun Liu, R. Mizokuchi, J. Yoneda, T. Kodera, T. Mori","doi":"10.1587/transele.2022fus0002","DOIUrl":"https://doi.org/10.1587/transele.2022fus0002","url":null,"abstract":"","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":null,"pages":null},"PeriodicalIF":0.5,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67306243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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