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Semiconductors and Semimetals最新文献

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Nitride Semiconductor Nanorod Heterostructures for Full-Color and White-Light Applications 全彩色和白光应用的氮化半导体纳米棒异质结构
4区 物理与天体物理
Semiconductors and Semimetals Pub Date : 2017-01-01 DOI: 10.1016/BS.SEMSEM.2016.09.002
S. Gwo, Yu-Jung Lu, H. W. Lin, C. Kuo, Chung-Lin Wu, M. Y. Lu, L. J. Chen
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引用次数: 4
Photophysics and Photochemistry at the Semiconductor/Electrolyte Interface for Solar Water Splitting 太阳能水分解半导体/电解质界面的光物理和光化学
4区 物理与天体物理
Semiconductors and Semimetals Pub Date : 2017-01-01 DOI: 10.1016/BS.SEMSEM.2017.03.001
Xiaogang Yang, Dunwei Wang
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引用次数: 7
Chapter Ten – Facet Control of Photocatalysts for Water Splitting 第十章:水裂解光催化剂的面形控制
4区 物理与天体物理
Semiconductors and Semimetals Pub Date : 2017-01-01 DOI: 10.1016/BS.SEMSEM.2017.04.003
Jian Pan, Gang Liu
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引用次数: 11
Growth and Structural Characterization of Self-Nucleated III-Nitride Nanowires 自核iii -氮化物纳米线的生长与结构表征
4区 物理与天体物理
Semiconductors and Semimetals Pub Date : 2017-01-01 DOI: 10.1016/BS.SEMSEM.2016.08.004
T. Auzelle, B. Daudin
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引用次数: 2
III-Nitride Semiconductor Photoelectrodes iii .氮化物半导体光电极
4区 物理与天体物理
Semiconductors and Semimetals Pub Date : 2017-01-01 DOI: 10.1016/BS.SEMSEM.2017.03.003
K. Fujii
{"title":"III-Nitride Semiconductor Photoelectrodes","authors":"K. Fujii","doi":"10.1016/BS.SEMSEM.2017.03.003","DOIUrl":"https://doi.org/10.1016/BS.SEMSEM.2017.03.003","url":null,"abstract":"","PeriodicalId":49550,"journal":{"name":"Semiconductors and Semimetals","volume":"97 1","pages":"139-183"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/BS.SEMSEM.2017.03.003","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"54135994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Chapter Seven – Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy 第七章:等离子体辅助分子束外延制备InGaN/GaN纳米柱异质结构的选择性面积生长
4区 物理与天体物理
Semiconductors and Semimetals Pub Date : 2017-01-01 DOI: 10.1016/BS.SEMSEM.2016.08.003
S. Albert, A. Bengoechea-Encabo, M. Sánchez-García, E. Calleja
{"title":"Chapter Seven – Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy","authors":"S. Albert, A. Bengoechea-Encabo, M. Sánchez-García, E. Calleja","doi":"10.1016/BS.SEMSEM.2016.08.003","DOIUrl":"https://doi.org/10.1016/BS.SEMSEM.2016.08.003","url":null,"abstract":"","PeriodicalId":49550,"journal":{"name":"Semiconductors and Semimetals","volume":"96 1","pages":"231-266"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/BS.SEMSEM.2016.08.003","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"54135807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors III-N宽禁带深紫外激光器和光电探测器
4区 物理与天体物理
Semiconductors and Semimetals Pub Date : 2017-01-01 DOI: 10.1016/BS.SEMSEM.2016.09.001
T. Detchprohm, Xiaohang Li, S. Shen, P. D. Yoder, R. Dupuis
{"title":"III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors","authors":"T. Detchprohm, Xiaohang Li, S. Shen, P. D. Yoder, R. Dupuis","doi":"10.1016/BS.SEMSEM.2016.09.001","DOIUrl":"https://doi.org/10.1016/BS.SEMSEM.2016.09.001","url":null,"abstract":"","PeriodicalId":49550,"journal":{"name":"Semiconductors and Semimetals","volume":"96 1","pages":"121-166"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/BS.SEMSEM.2016.09.001","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"54135839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Dynamic Atomic Layer Epitaxy of InN on/in GaN and Its Application for Fabricating Ordered Alloys in Whole III-N System 氮化镓上/内InN动态原子层外延及其在全III-N体系中制备有序合金中的应用
4区 物理与天体物理
Semiconductors and Semimetals Pub Date : 2017-01-01 DOI: 10.1016/BS.SEMSEM.2016.10.001
K. Kusakabe, A. Yoshikawa
{"title":"Dynamic Atomic Layer Epitaxy of InN on/in GaN and Its Application for Fabricating Ordered Alloys in Whole III-N System","authors":"K. Kusakabe, A. Yoshikawa","doi":"10.1016/BS.SEMSEM.2016.10.001","DOIUrl":"https://doi.org/10.1016/BS.SEMSEM.2016.10.001","url":null,"abstract":"","PeriodicalId":49550,"journal":{"name":"Semiconductors and Semimetals","volume":"96 1","pages":"305-340"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/BS.SEMSEM.2016.10.001","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"54135847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Materials Challenges of AlGaN-Based UV Optoelectronic Devices 藻类基紫外光电器件的材料挑战
4区 物理与天体物理
Semiconductors and Semimetals Pub Date : 2017-01-01 DOI: 10.1016/BS.SEMSEM.2016.11.001
M. Crawford
{"title":"Materials Challenges of AlGaN-Based UV Optoelectronic Devices","authors":"M. Crawford","doi":"10.1016/BS.SEMSEM.2016.11.001","DOIUrl":"https://doi.org/10.1016/BS.SEMSEM.2016.11.001","url":null,"abstract":"","PeriodicalId":49550,"journal":{"name":"Semiconductors and Semimetals","volume":"30 1","pages":"3-44"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/BS.SEMSEM.2016.11.001","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"54135852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Charge Carrier Dynamics in Metal Oxide Photoelectrodes for Water Oxidation 水氧化金属氧化物光电极中的载流子动力学
4区 物理与天体物理
Semiconductors and Semimetals Pub Date : 2017-01-01 DOI: 10.1016/BS.SEMSEM.2017.02.002
A. Kafizas, R. Godin, J. Durrant
{"title":"Charge Carrier Dynamics in Metal Oxide Photoelectrodes for Water Oxidation","authors":"A. Kafizas, R. Godin, J. Durrant","doi":"10.1016/BS.SEMSEM.2017.02.002","DOIUrl":"https://doi.org/10.1016/BS.SEMSEM.2017.02.002","url":null,"abstract":"","PeriodicalId":49550,"journal":{"name":"Semiconductors and Semimetals","volume":"97 1","pages":"3-46"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/BS.SEMSEM.2017.02.002","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"54135880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
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