发布求助
文献互助 智能选刊 最新文献

Turkish Journal of Physics最新文献

筛选
英文 中文
Strategies to reach ultrahigh capacitance values for supercapacitors: materials design 超级电容器达到超高电容值的策略:材料设计
IF 2.1
Turkish Journal of Physics Pub Date : 2021-09-23 DOI: 10.3906/fiz-2104-14
I. D. Yildirim, A. U. Ammar, M. Buldu-Akturk, F. Bakan, E. Erdem
{"title":"Strategies to reach ultrahigh capacitance values for supercapacitors: materials design","authors":"I. D. Yildirim, A. U. Ammar, M. Buldu-Akturk, F. Bakan, E. Erdem","doi":"10.3906/fiz-2104-14","DOIUrl":"https://doi.org/10.3906/fiz-2104-14","url":null,"abstract":"This review paper highlights the recent developments in supercapacitors by pointing out the significance of appropriate electrode and device designs. We reported ten extremely high-performance supercapacitors with specific capacitance values among the highest available until now to the best of our knowledge. These state-of-the-art designs employing innovative electrode materials have been discussed along with their short descriptions. The supercapacitors collected here possess the most promising potential for facilitating next-generation systems in energy harvesting and storage. This review is just the surface that can help provide a pathway for supercapacitor","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":"1 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2021-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41875832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Study of the average transverse sphericity in 𝒑𝒑 collisions at Large Hadron Collider (LHC) energies 大型强子对撞机(LHC)能量下𝒑𝒑碰撞中平均横向球度的研究
IF 2.1
Turkish Journal of Physics Pub Date : 2021-08-31 DOI: 10.3906/fiz-2103-26
U. Tabassam, S. Abbas, Muhammad Anns Saif, Z. Abidin, Y. Ali
{"title":"Study of the average transverse sphericity in 𝒑𝒑 collisions at Large Hadron Collider (LHC) energies","authors":"U. Tabassam, S. Abbas, Muhammad Anns Saif, Z. Abidin, Y. Ali","doi":"10.3906/fiz-2103-26","DOIUrl":"https://doi.org/10.3906/fiz-2103-26","url":null,"abstract":"","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":" ","pages":""},"PeriodicalIF":2.1,"publicationDate":"2021-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46266683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fano enhancement of second harmonic field via dark-bright plasmon coupling 暗亮等离子体耦合对二次谐波场的Fano增强
IF 2.1
Turkish Journal of Physics Pub Date : 2021-08-31 DOI: 10.3906/fiz-2103-5
Mehmet Günay
{"title":"Fano enhancement of second harmonic field via dark-bright plasmon coupling","authors":"Mehmet Günay","doi":"10.3906/fiz-2103-5","DOIUrl":"https://doi.org/10.3906/fiz-2103-5","url":null,"abstract":"Surface plasmon resonances, the coherent oscillation of free electrons, can concentrate incident field into small volumes much smaller than the incident wavelength. The intense fields at these textit{hot spots} enhance the light-matter interactions and may lead to the appearance of nonlinearity. Controlling such nonlinearities is significant for various practical applications. Here we report that by coupling dark modes to the first and the generated second harmonic modes separately, one can gain control over both fields. We find that by engineering path interferences (Fano resonances) between bright and dark plasmon modes it is possible to enhance the fundamental mode without increasing the nonlinear field, enhance the nonlinear field without modifying the fundamental mode, and enhance the second harmonic field with enhanced fundamental mode.","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":" ","pages":""},"PeriodicalIF":2.1,"publicationDate":"2021-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42371509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
𝚲𝒄 → 𝚲 form factors in lattice QCD 𝚲<s:2>→𝚲点阵QCD的形状因子
IF 2.1
Turkish Journal of Physics Pub Date : 2021-07-29 DOI: 10.3906/fiz-2104-28
H. Bahtiyar
{"title":"𝚲𝒄 → 𝚲 form factors in lattice QCD","authors":"H. Bahtiyar","doi":"10.3906/fiz-2104-28","DOIUrl":"https://doi.org/10.3906/fiz-2104-28","url":null,"abstract":"Studying the semileptonic decays of charmed particles is prominent in testing the Standard Model of particle physics. Motivated by recent experimental progress in weak decays of the charm baryon sector, we study the form factors of Λc → Λ`ν transition on two flavor lattices. We compute twoand three-point functions, extract the dimensionless projected correlators, and combine them to form the Weinberg form factors. In the zero transferred momentum limit f1, f2 and g1 form factors are found to be in agreement with other models, furthermore f3 and g3 form factors are comparable to model determinations. The g2 form factor, on the other hand, is found to be mildly larger. We also evaluate the helicity form factors, which is consistent with the previous lattice studies.","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":" ","pages":""},"PeriodicalIF":2.1,"publicationDate":"2021-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49142967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A New Astronomical Parameter from Remote Sensing Data: Astronomical Clearness Index (ACI) 遥感数据中的一个新的天文参数：天文清晰度指数（ACI）
IF 2.1
Turkish Journal of Physics Pub Date : 2021-06-30 DOI: 10.3906/fiz-2005-14
K. Kaba, C. Yeşi̇lyaprak, O. Şatır
{"title":"A New Astronomical Parameter from Remote Sensing Data: Astronomical Clearness Index (ACI)","authors":"K. Kaba, C. Yeşi̇lyaprak, O. Şatır","doi":"10.3906/fiz-2005-14","DOIUrl":"https://doi.org/10.3906/fiz-2005-14","url":null,"abstract":"Eastern Anatolia Observatory (DAG) project was initiated in Erzurum/Turkey in 2011. DAG will have Turkey’s largest (4 m) and first infrared telescope. The installation process is planned to be by taking its first light in the end of 2021. This study was focused on a new analysis method about the atmospheric properties of DAG site in terms of the cloudiness as known the most vital atmospheric parameter for ground-based astronomical observatories. In this regard, the cloudiness for DAG site is comprehensively examined using the “Cloud Mask” (CMa) and “Cloud Type” (CT) products from Satellite Application Facility on Support to Nowcasting and Very Short-Range Forecasting (NWC SAF). Firstly, the cloudiness and the cloud types over DAG site were determined. Secondly, NWC SAF CMa and CT data have been redefined for astronomical purposes, and the pixel values/meanings in CMa and CT images have been reduced from 6 to 4 and from 21 to 4 pixels, respectively. Thirdly, these new data were used to define a new index named as “Astronomical Clearness Index” (ACI), and finally, the observable days for DAG site were determined using this newly defined index.","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":" ","pages":""},"PeriodicalIF":2.1,"publicationDate":"2021-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49547080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sputtered 2D transition metal dichalcogenides: from growth to device applications 溅射二维过渡金属二硫化物:从生长到器件应用
IF 2.1
Turkish Journal of Physics Pub Date : 2021-06-28 DOI: 10.3906/fiz-2104-8
M. Acar, E. Gur
{"title":"Sputtered 2D transition metal dichalcogenides: from growth to device applications","authors":"M. Acar, E. Gur","doi":"10.3906/fiz-2104-8","DOIUrl":"https://doi.org/10.3906/fiz-2104-8","url":null,"abstract":"Starting from graphene, 2D layered materials family has been recently set up more than 100 different materials with variety of different class of materials such as semiconductors, metals, semimetals, superconductors. Among these materials, 2D semiconductors have found especial importance in the state of the art device applications compared to that of the current conventional devices such as (which material based for example Si based) field effect transistors (FETs) and photodetectors during the last two decades. This high potential in solid state devices is mostly revealed by the transition metal dichalcogenides (TMDCs) semiconductor materials such as MoS2 , WS2 , MoSe2 and WSe2 . Therefore, many different methods and approaches have been developed to grow or obtain so far in order to make use them in solid state devices, which is a great challenge in large area applications. Although there are intensively studied methods such as chemical vapor deposition (CVD), mechanical exfoliation, atomic layer deposition, it is sputtering getting attention day by day due to the simplicity of the growth method together with its reliability, large area growth possibility and repeatability. In this review article, we provide benefits and disadvantages of all the growth methods when growing TMDC materials, then focusing on the sputtering TMDC growth strategies performed. In addition, TMDCs for the FETs and photodetector devices grown by RFMS have been surveyed.","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":" ","pages":""},"PeriodicalIF":2.1,"publicationDate":"2021-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43445799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The investigation of the complex dielectric and electric modulus of Al/Mg2Si/p-Si Schottky diode and its AC electrical conductivity in a wide frequency range 宽频率范围内Al/Mg2Si/p-Si肖特基二极管的复介电模量、复电模量及其交流电导率的研究
IF 2.1
Turkish Journal of Physics Pub Date : 2021-06-28 DOI: 10.3906/fiz-2101-17
Ö. Sevgili
{"title":"The investigation of the complex dielectric and electric modulus of Al/Mg2Si/p-Si Schottky diode and its AC electrical conductivity in a wide frequency range","authors":"Ö. Sevgili","doi":"10.3906/fiz-2101-17","DOIUrl":"https://doi.org/10.3906/fiz-2101-17","url":null,"abstract":"","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":" ","pages":""},"PeriodicalIF":2.1,"publicationDate":"2021-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49669560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
The effect of two different substituted atoms in lithium positions on the structure of garnet-type solid electrolytes 锂离子位置上两种不同取代原子对石榴石型固体电解质结构的影响
IF 2.1
Turkish Journal of Physics Pub Date : 2021-06-28 DOI: 10.3906/fiz-2012-5
S. Saran, O. M. Özkendir, Ü. Atav
{"title":"The effect of two different substituted atoms in lithium positions on the structure of garnet-type solid electrolytes","authors":"S. Saran, O. M. Özkendir, Ü. Atav","doi":"10.3906/fiz-2012-5","DOIUrl":"https://doi.org/10.3906/fiz-2012-5","url":null,"abstract":"","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":" ","pages":""},"PeriodicalIF":2.1,"publicationDate":"2021-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45728750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Investigating the effect of self-trapped holes in the current gain mechanism of β−Ga2O3 Schottky diode photodetectors 研究了自困空穴对β−Ga2O3肖特基二极管光电探测器电流增益机制的影响
IF 2.1
Turkish Journal of Physics Pub Date : 2021-06-28 DOI: 10.3906/fiz-2102-12
F. Akyol
{"title":"Investigating the effect of self-trapped holes in the current gain mechanism of β−Ga2O3 Schottky diode photodetectors","authors":"F. Akyol","doi":"10.3906/fiz-2102-12","DOIUrl":"https://doi.org/10.3906/fiz-2102-12","url":null,"abstract":"","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":" ","pages":""},"PeriodicalIF":2.1,"publicationDate":"2021-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47681458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Materials and devices for integrated room temperature quantum spintronics 集成室温量子自旋电子学的材料和器件
IF 2.1
Turkish Journal of Physics Pub Date : 2021-04-29 DOI: 10.3906/fiz-2005-25
M. Onbaşlı
{"title":"Materials and devices for integrated room temperature quantum spintronics","authors":"M. Onbaşlı","doi":"10.3906/fiz-2005-25","DOIUrl":"https://doi.org/10.3906/fiz-2005-25","url":null,"abstract":"","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":"45 1","pages":"74-81"},"PeriodicalIF":2.1,"publicationDate":"2021-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47933467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信