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ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings最新文献

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Linear phase dual-mode dielectric resonator filters without iris 无虹膜线性相位双模介电谐振器滤波器
ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings Pub Date : 1996-08-12 DOI: 10.1109/ICMWFT.1996.574843
Jianzhong Qian, Jun‐Na Zhou, Qiang Wang
{"title":"Linear phase dual-mode dielectric resonator filters without iris","authors":"Jianzhong Qian, Jun‐Na Zhou, Qiang Wang","doi":"10.1109/ICMWFT.1996.574843","DOIUrl":"https://doi.org/10.1109/ICMWFT.1996.574843","url":null,"abstract":"This paper presents a novel realization of the linear phase dual-mode dielectric resonator filter in a simple structure which introduces a cross-coupling between two non-cascade resonant cavities in the normal dual-mode dielectric resonator filter.","PeriodicalId":447478,"journal":{"name":"ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129225111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Millimeterwave monolithic integrated mixer 毫米波整体式混频器
ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings Pub Date : 1996-08-12 DOI: 10.1109/ICMWFT.1996.574821
Gao Baoxin, Gong Ke, Sun Yingxin, Jiang Guanhui
{"title":"Millimeterwave monolithic integrated mixer","authors":"Gao Baoxin, Gong Ke, Sun Yingxin, Jiang Guanhui","doi":"10.1109/ICMWFT.1996.574821","DOIUrl":"https://doi.org/10.1109/ICMWFT.1996.574821","url":null,"abstract":"This paper presents a Millimeterwave Monolithic integrated balanced mixer, including its design and analysis method, its circuit and implementation, and the measured performance compared with the predicted one. By designing this MMIC mixer various mathematical methods are used, in which the Method of Conversion Matrix has been extended to meet the requirement of intermodulation analysis. The mixer is realized in a 2/spl times/3 mm/sup 2/ GaAs chip, working in the frequency band of 31-36 GHz with a noise figure less than 10 dB.","PeriodicalId":447478,"journal":{"name":"ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130674776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved slotted-filter for over-mode rectangular waveguide 过模矩形波导的改进型开槽滤波器
ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings Pub Date : 1996-08-12 DOI: 10.1109/ICMWFT.1996.574840
Y. Qin, Yexin Yang
{"title":"Improved slotted-filter for over-mode rectangular waveguide","authors":"Y. Qin, Yexin Yang","doi":"10.1109/ICMWFT.1996.574840","DOIUrl":"https://doi.org/10.1109/ICMWFT.1996.574840","url":null,"abstract":"A slotted-mode filter with high handling power for over-mode rectangular waveguide is described in this paper, however, because the unwanted higher modes TE/sub mn/ and TM/sub mn/ are degenerate in the system, they cannot be removed completely. The situation can be improved by deforming slightly the cross-sectional shape of the filter.","PeriodicalId":447478,"journal":{"name":"ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123980236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
W-band 1/2 frequency divider w波段1/2分频器
ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings Pub Date : 1996-08-12 DOI: 10.1109/ICMWFT.1996.574846
C. Shan, Zhang Qing Tai
{"title":"W-band 1/2 frequency divider","authors":"C. Shan, Zhang Qing Tai","doi":"10.1109/ICMWFT.1996.574846","DOIUrl":"https://doi.org/10.1109/ICMWFT.1996.574846","url":null,"abstract":"In this paper the theoretical and experimental performances of a W-band frequency divider are presented. The results show that this TED harmonically synchronized frequency divider has a 94-47 GHz division, with 4.2 mW output power over the operating band greater than 1.5 GHz at 10 mW power level.","PeriodicalId":447478,"journal":{"name":"ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121184178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research on the front-end transceiving components of the 8 mm integrated communication receivers 8mm集成通信接收机前端收发器件的研究
ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings Pub Date : 1996-08-12 DOI: 10.1109/ICMWFT.1996.574788
Zhang Bingyi
{"title":"Research on the front-end transceiving components of the 8 mm integrated communication receivers","authors":"Zhang Bingyi","doi":"10.1109/ICMWFT.1996.574788","DOIUrl":"https://doi.org/10.1109/ICMWFT.1996.574788","url":null,"abstract":"The 8mm transceiving units are made onto two integrated chips. Since it has a fine line structure, this system could connect to the transceiving duplex using the waveguide cover shielding. This system could transmit one voice channel plus one image channel with good performance. It has simple structure, flexible interconnectivity, and is easy to use.","PeriodicalId":447478,"journal":{"name":"ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121371369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recent advances in the performance of GaAs- and InP-based two-terminal devices as high-power millimeter-wave sources 基于GaAs和inp的高功率毫米波源双端器件性能的最新进展
ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings Pub Date : 1996-08-12 DOI: 10.1109/ICMWFT.1996.574323
G. Haddad, H. Eisele
{"title":"Recent advances in the performance of GaAs- and InP-based two-terminal devices as high-power millimeter-wave sources","authors":"G. Haddad, H. Eisele","doi":"10.1109/ICMWFT.1996.574323","DOIUrl":"https://doi.org/10.1109/ICMWFT.1996.574323","url":null,"abstract":"Advanced growth techniques for nanometer-scale devices at millimeter- and submillimeter-wave frequencies are mature and readily available to produce the required epitaxial material. Selective etching techniques allow precise fabrication control. Layer structures for diodes with low-noise interband tunneling as the predominant injection mechanism were designed using a simple unified large-signal analysis and grown by molecular-beam epitaxy (MBE). These tunnel injection transit-time (TUNNETT) diodes on diamond heat sinks yielded up to 100 mW between 100 GHz and 105 GHz with corresponding dc-to-RF conversion efficiencies of up to 6%. Excellent FM noise measures of between 22 dB and 26 dB at high power levels were obtained, and noise measures below 18 dB at intermediate power levels are the lowest reported for any oscillator utilizing two-terminal devices in this frequency range. RF power levels and dc-to-RF conversion efficiencies exceed those of GaAs Gunn devices in the same frequency range.","PeriodicalId":447478,"journal":{"name":"ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings","volume":"23 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114109076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Field effect transistors for power applications in millimetre wave range 毫米波功率应用场效应晶体管
ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings Pub Date : 1996-08-12 DOI: 10.1109/ICMWFT.1996.574694
G. Salmer
{"title":"Field effect transistors for power applications in millimetre wave range","authors":"G. Salmer","doi":"10.1109/ICMWFT.1996.574694","DOIUrl":"https://doi.org/10.1109/ICMWFT.1996.574694","url":null,"abstract":"The main requirements for power devices in the millimetre wave range are high values of current gain cut-off frequency, maximum current density and breakdown voltages. Among the various kinds of field effect transistors available, AlInAs-InGaAs MODFETs on an InP substrate have the greatest potential, in term of speed and drain current capabilities. Up to very recently, the main problem remained the low values of breakdown voltage, but recent improvements resulting from a better recessed zone configuration may solve this problem fully. On the other hand, metamorphic HEMT structures on GaAs substrates can constitute a better candidate in term of current density and voltage capabilities, having in mind the availability of low cost GaAs substrates. Also for this frequency range, MESFET or HEMT structures using large band gap materials such as SiC or GaN can constitute a very promising solution due to the low values of carrier mobility.","PeriodicalId":447478,"journal":{"name":"ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings","volume":"194 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114862379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrated and active antennas for system applications 用于系统应用的集成有源天线
ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings Pub Date : 1996-08-12 DOI: 10.1109/ICMWFT.1996.574693
K. Chang
{"title":"Integrated and active antennas for system applications","authors":"K. Chang","doi":"10.1109/ICMWFT.1996.574693","DOIUrl":"https://doi.org/10.1109/ICMWFT.1996.574693","url":null,"abstract":"Many integrated and active antennas have been developed at Texas A&M University. The applications of using these active antennas for communications, sensors, RFIDs, and spatial power combining applications are emerging. This paper discusses these applications.","PeriodicalId":447478,"journal":{"name":"ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127977273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis on a new slow-wave structure for millimeter wave TWT 毫米波行波管一种新型慢波结构分析
ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings Pub Date : 1996-08-12 DOI: 10.1109/ICMWFT.1996.574825
Y. GuoFen, Gong Yu-bin, Wang Wenxiang
{"title":"Analysis on a new slow-wave structure for millimeter wave TWT","authors":"Y. GuoFen, Gong Yu-bin, Wang Wenxiang","doi":"10.1109/ICMWFT.1996.574825","DOIUrl":"https://doi.org/10.1109/ICMWFT.1996.574825","url":null,"abstract":"By field matching method, we have derived strictly out the dispersion equation and coupling impedance of ridge-loaded helical groove. Through numerical calculation of these formulas, we could get the relative curves of dispersion and coupling impedance with geometrical dimensions. The analysis in this paper has provided theoretic basis of the designing and calculating for ridge-loaded helical groove millimeter TWT.","PeriodicalId":447478,"journal":{"name":"ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132240968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
W-band Gunn second subharmonically locked oscillator w波段Gunn第二次谐波锁定振荡器
ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings Pub Date : 1996-08-12 DOI: 10.1109/ICMWFT.1996.574711
C. Shan, Zhang Qin Tai
{"title":"W-band Gunn second subharmonically locked oscillator","authors":"C. Shan, Zhang Qin Tai","doi":"10.1109/ICMWFT.1996.574711","DOIUrl":"https://doi.org/10.1109/ICMWFT.1996.574711","url":null,"abstract":"In this paper, the averaging method is used to analyse the performance of second subharmonically injection locked Gunn oscillator. Some useful expressions such as the locking range, output response, output impedance of the nonlinear device in fundamental and subharmonic frequency are obtained. A W-band subharmonically locked Gunn oscillator is developed and experimental results demonstrates the validity of this analysis.","PeriodicalId":447478,"journal":{"name":"ICMWFST'96. 1996 4th International Conference on Millimeter Wave and Far Infrared Science and Technology. Proceedings","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132511615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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