2013 22nd International Conference on Noise and Fluctuations (ICNF)最新文献_第10页

2013 22nd International Conference on Noise and Fluctuations (ICNF) Pub Date : 2013-06-24 DOI: 10.1109/ICNF.2013.6578979

J. Przybytek, M. Gryglas-Borysiewicz, M. Baj, A. Cavanna, G. Faini, U. Gennser, A. Ouerghi

引用次数: 0

Input referred noise of magneto-resistor based current conditioners 基于磁电阻的电流调节器输入参考噪声

2013 22nd International Conference on Noise and Fluctuations (ICNF) Pub Date : 2013-06-24 DOI: 10.1109/ICNF.2013.6578902

G. Allègre, M. Timofeeva, J. Thomas, S. Flament, D. Robbes

引用次数: 0

Noise diagnostics of composite materials by using spectral characteristics of electromagnetic emission 利用电磁发射光谱特性诊断复合材料噪声

2013 22nd International Conference on Noise and Fluctuations (ICNF) Pub Date : 2013-06-24 DOI: 10.1109/ICNF.2013.6578939

P. Koktavy, T. Trčka, B. Koktavý

引用次数: 0

Resonant multi-ion conduction in a simple model of calcium channels 钙离子通道简单模型中的共振多离子传导

2013 22nd International Conference on Noise and Fluctuations (ICNF) Pub Date : 2013-06-24 DOI: 10.1109/ICNF.2013.6578926

I. Kaufman, R. Tindjong, D. Luchinsky, P. McClintock, R. Eisenberg

{"title":"Resonant multi-ion conduction in a simple model of calcium channels","authors":"I. Kaufman, R. Tindjong, D. Luchinsky, P. McClintock, R. Eisenberg","doi":"10.1109/ICNF.2013.6578926","DOIUrl":"https://doi.org/10.1109/ICNF.2013.6578926","url":null,"abstract":"The ionic permeation of a biological ion channel is a multi-particle, non-equilibrium, stochastic process. Brownian dynamics simulations for a simple electrostatic model of the calcium channel reveal regular structure in the conductance and selectivity as functions of the negative fixed charge Qf on the protein wall at the selectivity filter. This structure consists of distinct high conductance regions (conduction bands) separated by regions of near non-conductance (stop-bands). We report self-consistent electrostatic calculations of single-file, double-ion, stochastic optimal trajectories, and of the energy profiles along these trajectories, for different Qf. We show that the energy difference ΔE along the optimal path exhibits a pronounced minimum near Qf = 3e corresponding to an almost barrier-less (ΔE ~ kBT) resonance-like form of conduction. We demonstrate explicitly that the sharply-defined conduction/selectivity peak of the L-type calcium channel is attributable to the barrier-less knock-on motion of a pair of calcium ions that can occur when their mutual electrostatic repulsion balances their electrostatic attraction to the charge at the selectivity filter. The electrostatics calculations agree well with the results of Brownian dynamics simulations. These results clarify the longstanding puzzle of how the L-type calcium channel exhibits, simultaneously, both high calcium selectivity and conduction at almost the rate of free diffusion.","PeriodicalId":447195,"journal":{"name":"2013 22nd International Conference on Noise and Fluctuations (ICNF)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122088022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

All the colors of noise 各种颜色的噪音

2013 22nd International Conference on Noise and Fluctuations (ICNF) Pub Date : 2013-06-24 DOI: 10.1109/ICNF.2013.6578874

L. Reggiani

引用次数: 3

Time-varying low-frequency noise in InGaP/GaAs HBTs InGaP/GaAs HBTs中的时变低频噪声

2013 22nd International Conference on Noise and Fluctuations (ICNF) Pub Date : 2013-06-24 DOI: 10.1109/ICNF.2013.6578956

O. Sevimli, A. Parker, S. Mahon, A. Fattorini

引用次数: 1

Gate defects in AlGaN/GaN HEMTs revealed by low frequency noise measurements 低频噪声测量揭示了AlGaN/GaN hemt中的栅极缺陷

2013 22nd International Conference on Noise and Fluctuations (ICNF) Pub Date : 2013-06-24 DOI: 10.1109/ICNF.2013.6578987

J. Tartarin, S. Karboyan, D. Carisetti, B. Lambert

{"title":"Gate defects in AlGaN/GaN HEMTs revealed by low frequency noise measurements","authors":"J. Tartarin, S. Karboyan, D. Carisetti, B. Lambert","doi":"10.1109/ICNF.2013.6578987","DOIUrl":"https://doi.org/10.1109/ICNF.2013.6578987","url":null,"abstract":"From the last decade, Nitride-based High Electron Mobility Transistors (HEMTs) have demonstrated excellent electrical and noise performances to address transceivers modules. Within this paper, a discussion on the low frequency noise on the gate access (i.e. gate current spectral density SIG) in the frequency range of 1Hz-100kHz is presented. SIG spectra reveal different signatures according to the configuration of biasing of the transistor, and to the dimensions of the transistor: the noise of the Schottky diode is studied alone (under open drain configuration), and compared with SIG of the transistor biased in the saturated region (at VDs=8V). Two designs of devices are tested: research-level devices featuring single gate finger are compared with commercial devices featuring four gate fingers, where each finger is four times larger (i.e. 16 times larger gate width than research level devices). The two sets of devices followed the same fabrication process. It is found that whatever the sizing and the gate pad configuration of the devices, the LFN spectra observed on each set of transistors feature identical signatures. The leakage carriers are following the same path between the gate and source accesses. LFN can be used as an accurate tool to discriminate between conduction mechanisms of devices, and to help to understand what are the underlying mechanisms leading to the conduction of the Schottky diode (and thus to its degradation). Moreover, it is shown that the SIG measurements under transistor biasing conditions can be correlated to the gate current spectral density in diode mode: the leakage current zone can also be tracked under this biasing operating mode.","PeriodicalId":447195,"journal":{"name":"2013 22nd International Conference on Noise and Fluctuations (ICNF)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114326635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Triple mode-jumping in a spin torque oscillator 自旋转矩振荡器的三重模式跳变

2013 22nd International Conference on Noise and Fluctuations (ICNF) Pub Date : 2013-06-24 DOI: 10.1109/ICNF.2013.6578965

A. Eklund, S. Sani, S. Mohseni, J. Persson, B. Malm, J. Åkerman

引用次数: 4

Terahertz detection and electronic noise in field-effect transistors 场效应晶体管中的太赫兹探测与电子噪声

2013 22nd International Conference on Noise and Fluctuations (ICNF) Pub Date : 2013-06-24 DOI: 10.1109/ICNF.2013.6578929

A. Mahi, A. Belghachi, H. Marinchio, C. Palermo, L. Varani, P. Shiktorov, V. Gruzhinskis, J. Starikov

引用次数: 2

Low frequency noise measurements of advanced BiCMOS SiGeC Heterojunction Bipolar Transistors used for mm-Wave to terahertz applications 用于毫米波到太赫兹应用的先进BiCMOS SiGeC异质结双极晶体管的低频噪声测量

2013 22nd International Conference on Noise and Fluctuations (ICNF) Pub Date : 2013-06-24 DOI: 10.1109/ICNF.2013.6578977

M. Seif, F. Pascal, B. Sagnes, A. Hoffmann, S. Haendler, P. Chevalier, D. Gloria

{"title":"Low frequency noise measurements of advanced BiCMOS SiGeC Heterojunction Bipolar Transistors used for mm-Wave to terahertz applications","authors":"M. Seif, F. Pascal, B. Sagnes, A. Hoffmann, S. Haendler, P. Chevalier, D. Gloria","doi":"10.1109/ICNF.2013.6578977","DOIUrl":"https://doi.org/10.1109/ICNF.2013.6578977","url":null,"abstract":"In this study, we present recent low frequency noise results obtained on Si/SiGeC Heterojunction Bipolar Transistors (HBTs) associated with a 0.13μm BiCMOS technology. Two technologies are studied, referenced as A and B, with high frequency figures of merit fT/fMAX (unity current gain frequency/maximum oscillation frequency) 220/280 GHz for technology A and 300/400 GHz for technology B. The LF Noise measurements are performed in the 1Hz-100 kHz frequency range as a function of the base bias current and of the emitter area AE. The 1/f noise component is studied through the SPICE LFN parameters AF and KF. The KB figure of merit (KB = KF *AE), used to compare the 1/f noise level, has an excellent value of 1.5 10-10 μm2 for technology A and above 6 10-10 μm2 for technology B. Dispersion of the 1/f noise level observed on technology B is associated to the presence of predominant GR components. A temperature study of the 1/f noise level evolution in the range 15-100°C was also done. The temperature dependence is week except at very low base current bias.","PeriodicalId":447195,"journal":{"name":"2013 22nd International Conference on Noise and Fluctuations (ICNF)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126111463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9