发布求助
文献互助 智能选刊 最新文献

Post-Transition Metals最新文献

筛选
英文 中文
IMPATT Diodes Based on GaAs for Millimeter Wave Applications with Reference to Si 毫米波应用中基于砷化镓的impt二极管参考Si
Post-Transition Metals Pub Date : 2021-03-17 DOI: 10.5772/INTECHOPEN.95874
J. Pradhan, S. R. Pattanaik
{"title":"IMPATT Diodes Based on GaAs for Millimeter Wave Applications with Reference to Si","authors":"J. Pradhan, S. R. Pattanaik","doi":"10.5772/INTECHOPEN.95874","DOIUrl":"https://doi.org/10.5772/INTECHOPEN.95874","url":null,"abstract":"The small signal characteristics of DDR IMPATTs based on GaAs designed to operate at mm-wave window frequencies such as 94, 140, and 220 GHz are presented in this chapter. Both the DC and Small signal performance of the above-mentioned devices are investigated by using a small signal simulation technique developed by the authors. The efficiency, output power and power density of GaAs IMPATT is higher than that of Si IMPATT. Results show that the DDR IMPATTs based on GaAs are most suitable for generation of RF power with maximum conversion efficiency up to 220 GHz. The noise behavior of GaAs IMPATT yield less noise as compared to Si IMPATT.","PeriodicalId":446707,"journal":{"name":"Post-Transition Metals","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114746563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Features of the Ionic State of Indium in Perchlorate Solutions and the Physicochemical Properties of Indium Perchlorate 高氯酸盐溶液中铟离子态的特征及高氯酸铟的理化性质
Post-Transition Metals Pub Date : 2020-12-07 DOI: 10.5772/intechopen.94258
Radionov Boris Konstantinovich, Svirsky Ilya Anatolievich
{"title":"Features of the Ionic State of Indium in Perchlorate Solutions and the Physicochemical Properties of Indium Perchlorate","authors":"Radionov Boris Konstantinovich, Svirsky Ilya Anatolievich","doi":"10.5772/intechopen.94258","DOIUrl":"https://doi.org/10.5772/intechopen.94258","url":null,"abstract":"The possibility of the formation of India perchlorate and mixed ligand complexes has been studied. It is assumed that during the extraction of indium in aqueous solutions of hydrochloric acid at various concentrations and constant ionic strength maintained by the addition of perchloric acid, indium is present in the organic phase in the form of ionic aggregates HClO4 · HInCl4. To study the hydration of Ions, the method of electrical conductivity was carried out in the “In(ClO4)3 - HClO4 - H2O” system. The structure of aqueous solutions of India perchlorates was determined by IR spectroscopy. The structures of trivalent perchlorate India have been established.","PeriodicalId":446707,"journal":{"name":"Post-Transition Metals","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131985763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparative Analysis Carried Out on Modern Indentation Techniques for the Measurement of Mechanical Properties: A Review 现代压痕力学性能测量技术的比较分析综述
Post-Transition Metals Pub Date : 2020-10-30 DOI: 10.5772/intechopen.94224
Saquib Rouf, S. Altaf, S. Malik, K. Najar
{"title":"Comparative Analysis Carried Out on Modern Indentation Techniques for the Measurement of Mechanical Properties: A Review","authors":"Saquib Rouf, S. Altaf, S. Malik, K. Najar","doi":"10.5772/intechopen.94224","DOIUrl":"https://doi.org/10.5772/intechopen.94224","url":null,"abstract":"Nowadays many indentation techniques are being commonly employed for determining some mechanical properties (harness, elastic modulus, toughness, etc.) using simple method of measuring the indentation depth. On the basis of measurement of depth of penetration, indentation technique has be classified into major categories i.e. microindentation and nanoindentation. Nanoindentation technique uses indirect method of determining the contact area as the depth of penetration is measured in nanometers, while in conventional indentation the area in contact is measured by elementary measurement of the residual area after the indenter is removed from the specimen. Dynamic hardness is the best result of dynamic indentation which can be expressed as the ratio of energy consumed during a rapid indentation to the volume of indentation. The parameter which are taken into consideration are indentation depth, contact force, contact area, mean contact pressure.","PeriodicalId":446707,"journal":{"name":"Post-Transition Metals","volume":"161 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114635669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigation of Indium Oxide Effect on Indium Particles Properties Used as Silicon Nanowires Catalyst 氧化铟对用作硅纳米线催化剂的铟颗粒性能影响的研究
Post-Transition Metals Pub Date : 2020-10-05 DOI: 10.5772/intechopen.93648
R. Zaghouani
{"title":"Investigation of Indium Oxide Effect on Indium Particles Properties Used as Silicon Nanowires Catalyst","authors":"R. Zaghouani","doi":"10.5772/intechopen.93648","DOIUrl":"https://doi.org/10.5772/intechopen.93648","url":null,"abstract":"In this chapter, we investigate on indium particles elaboration by different annealing processes: rapid thermal annealing (RTA) and conventional processes. The elaborated particles are dedicated to be used as catalyst for silicon nanowires’ (SiNWs) growth by vapor–liquid–solid (VLS) process. The annealing parameters effect on indium particles properties is studied. After conventional annealing, the indium layer is cracked into elongated and inhomogeneous islands of micrometric sizes. XRD analysis depicts, in addition to pure indium planes, the presence of new peaks attributed to indium oxide (In2O3) planes formed during annealing. After hydrogen treatment with a flow rate of 60 sccm during 10 min, some In2O3 peaks are eliminated and replaced by new indium peaks, explaining the amelioration of indium particles morphology. These formed particles have been used as catalyst for SiNWs’ growth. A low density of SiNWs is obtained, attributed to In2O3 persistence, decreasing the indium catalytic effect. Quasi-spherical and homogeneously distributed indium particles with an average size of 422 nm are successfully grown in one step by the RTA process during short time (5 min) at lower temperature (450°C). XRD analysis shows the absence of indium oxide in the contrary to those formed by the conventional furnace. SiNWs with higher density are obtained, highlighting the harmful role of indium oxide.","PeriodicalId":446707,"journal":{"name":"Post-Transition Metals","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129772017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信