发布求助
文献互助 智能选刊 最新文献

Physical Chemistry of Semiconductor Materials and Interfaces XVII最新文献

筛选
英文 中文
Front Matter: Volume 10724 前题:10724卷
Physical Chemistry of Semiconductor Materials and Interfaces XVII Pub Date : 2018-10-15 DOI: 10.1117/12.2515894
{"title":"Front Matter: Volume 10724","authors":"","doi":"10.1117/12.2515894","DOIUrl":"https://doi.org/10.1117/12.2515894","url":null,"abstract":"","PeriodicalId":445991,"journal":{"name":"Physical Chemistry of Semiconductor Materials and Interfaces XVII","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133594908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Manipulating energy and spin in molecular semiconductors (Conference Presentation) 操纵分子半导体中的能量和自旋(会议报告)
Physical Chemistry of Semiconductor Materials and Interfaces XVII Pub Date : 2018-09-17 DOI: 10.1117/12.2322033
S. Roberts
{"title":"Manipulating energy and spin in molecular semiconductors (Conference Presentation)","authors":"S. Roberts","doi":"10.1117/12.2322033","DOIUrl":"https://doi.org/10.1117/12.2322033","url":null,"abstract":"","PeriodicalId":445991,"journal":{"name":"Physical Chemistry of Semiconductor Materials and Interfaces XVII","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124561307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-smooth perovskite thin films for lasers (Conference Presentation) 激光用超光滑钙钛矿薄膜(会议报告)
Physical Chemistry of Semiconductor Materials and Interfaces XVII Pub Date : 2018-09-17 DOI: 10.1117/12.2319364
T. Riedl, N. Pourdavoud, A. Mayer, T. Haeger, R. Heiderhoff, Ivan Shutsko, H. Scheer, P. Görrn
{"title":"Ultra-smooth perovskite thin films for lasers (Conference Presentation)","authors":"T. Riedl, N. Pourdavoud, A. Mayer, T. Haeger, R. Heiderhoff, Ivan Shutsko, H. Scheer, P. Görrn","doi":"10.1117/12.2319364","DOIUrl":"https://doi.org/10.1117/12.2319364","url":null,"abstract":"","PeriodicalId":445991,"journal":{"name":"Physical Chemistry of Semiconductor Materials and Interfaces XVII","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123913187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Carrier dynamics in optically excited Fermi degenerate states in atomically thin TMDC semiconductors (Conference Presentation) 原子薄TMDC半导体中光激发费米简并态的载流子动力学(会议报告)
Physical Chemistry of Semiconductor Materials and Interfaces XVII Pub Date : 2018-09-17 DOI: 10.1117/12.2321206
K. Gundogdu
{"title":"Carrier dynamics in optically excited Fermi degenerate states in atomically thin TMDC semiconductors (Conference Presentation)","authors":"K. Gundogdu","doi":"10.1117/12.2321206","DOIUrl":"https://doi.org/10.1117/12.2321206","url":null,"abstract":"","PeriodicalId":445991,"journal":{"name":"Physical Chemistry of Semiconductor Materials and Interfaces XVII","volume":"42 1-2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114026233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Charge separation and collection in organic solar cells (Conference Presentation) 有机太阳能电池的电荷分离与收集(会议报告)
Physical Chemistry of Semiconductor Materials and Interfaces XVII Pub Date : 2018-09-17 DOI: 10.1117/12.2319967
J. Durrant
{"title":"Charge separation and collection in organic solar cells (Conference Presentation)","authors":"J. Durrant","doi":"10.1117/12.2319967","DOIUrl":"https://doi.org/10.1117/12.2319967","url":null,"abstract":"","PeriodicalId":445991,"journal":{"name":"Physical Chemistry of Semiconductor Materials and Interfaces XVII","volume":"166 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121249290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Understanding the photophysics of efficient non-fullerene acceptors (Conference Presentation) 了解高效非富勒烯受体的光物理(会议报告)
Physical Chemistry of Semiconductor Materials and Interfaces XVII Pub Date : 2018-09-17 DOI: 10.1117/12.2321235
Nathaniel P. Gallop, Xijia Zheng, Flurin D. Eisner, Mohammed Azzouzi, Zhuping Fei, M. Heeney, J. Nelson, A. Bakulin
{"title":"Understanding the photophysics of efficient non-fullerene acceptors (Conference Presentation)","authors":"Nathaniel P. Gallop, Xijia Zheng, Flurin D. Eisner, Mohammed Azzouzi, Zhuping Fei, M. Heeney, J. Nelson, A. Bakulin","doi":"10.1117/12.2321235","DOIUrl":"https://doi.org/10.1117/12.2321235","url":null,"abstract":"One of the key areas of study in organic photovoltaics is the development of so-called 'non-fullerene acceptors' (NFAs), which enjoy several benefits over older, fullerene-based acceptors, such as low cost, high absorptivity, and tuneability. A recent report Fei et. al. demonstrated conversion efficiencies of 13% in donor-acceptor blends comprising a fluorinated derivative of the common donor PBDB-T and an alkylated derivative of the ITIC (C8-ITIC) acceptor species. Understanding the underlying dynamics of this material is therefore important for the rational design of new NFAs.\u0000\u0000In order to understand the photophysical processes in C8-ITIC, we performed ultrafast transient absorption studies of four donor-acceptor blends, containing various combinations of C8-ITIC, PFBDB-T, and their unmodified predecessors. Long-lived excitons form at the acceptor regardless of the excitation frequency, suggestive of rapid energy transfer from the donor to the acceptor. Exciton decay at early times was more rapid in C8-ITIC compared to non-alkylated ITIC. A distinct change in exciton decay characteristics was observed at longer timescales in tandem with spectral drift in the acceptor’s excitonic peak. We use global analysis and a broader array of ultrafast spectroscopic techniques to elucidate the identity and mechanism behind this feature. Our results will help to shed light on the efficiency of this material and aid the development of more efficient and effective non-fullerene acceptors.","PeriodicalId":445991,"journal":{"name":"Physical Chemistry of Semiconductor Materials and Interfaces XVII","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127771596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanism of ligand-controlled emission in silicon quantum dots (Conference Presentation) 配体控制的硅量子点发射机制(会议报告)
Physical Chemistry of Semiconductor Materials and Interfaces XVII Pub Date : 2018-09-17 DOI: 10.1117/12.2321662
L. Peteanu, W. So, Qi Li, Rongchao Jin
{"title":"Mechanism of ligand-controlled emission in silicon quantum dots (Conference Presentation)","authors":"L. Peteanu, W. So, Qi Li, Rongchao Jin","doi":"10.1117/12.2321662","DOIUrl":"https://doi.org/10.1117/12.2321662","url":null,"abstract":"","PeriodicalId":445991,"journal":{"name":"Physical Chemistry of Semiconductor Materials and Interfaces XVII","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130704665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
P3HT thin film single-molecule and aggregate fluorescence microscopy studies (Conference Presentation) P3HT薄膜单分子和聚集体荧光显微镜研究(会议报告)
Physical Chemistry of Semiconductor Materials and Interfaces XVII Pub Date : 2018-09-17 DOI: 10.1117/12.2320622
Stephanie N Kramer, L. Peteanu
{"title":"P3HT thin film single-molecule and aggregate fluorescence microscopy studies (Conference Presentation)","authors":"Stephanie N Kramer, L. Peteanu","doi":"10.1117/12.2320622","DOIUrl":"https://doi.org/10.1117/12.2320622","url":null,"abstract":"","PeriodicalId":445991,"journal":{"name":"Physical Chemistry of Semiconductor Materials and Interfaces XVII","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127052619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Carrier spin relaxation in 2D perovskite semiconductors (Conference Presentation) 二维钙钛矿半导体中的载流子自旋弛豫(会议报告)
Physical Chemistry of Semiconductor Materials and Interfaces XVII Pub Date : 2018-09-17 DOI: 10.1117/12.2321066
K. Hall, Seth B. Todd, Drew B. Riley, A. Ramachandran, Charlotte Clegg, A. Binai-Motlagh, C. Stoumpos, S. March, I. Hill, M. Kanatzidis
{"title":"Carrier spin relaxation in 2D perovskite semiconductors (Conference Presentation)","authors":"K. Hall, Seth B. Todd, Drew B. Riley, A. Ramachandran, Charlotte Clegg, A. Binai-Motlagh, C. Stoumpos, S. March, I. Hill, M. Kanatzidis","doi":"10.1117/12.2321066","DOIUrl":"https://doi.org/10.1117/12.2321066","url":null,"abstract":"","PeriodicalId":445991,"journal":{"name":"Physical Chemistry of Semiconductor Materials and Interfaces XVII","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121061988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ion migration in methylammonium lead halide perovskites (Conference Presentation) 甲基铵卤化铅钙钛矿中的离子迁移(会议报告)
Physical Chemistry of Semiconductor Materials and Interfaces XVII Pub Date : 2018-09-17 DOI: 10.1117/12.2320259
B. Ehrler
{"title":"Ion migration in methylammonium lead halide perovskites (Conference Presentation)","authors":"B. Ehrler","doi":"10.1117/12.2320259","DOIUrl":"https://doi.org/10.1117/12.2320259","url":null,"abstract":"","PeriodicalId":445991,"journal":{"name":"Physical Chemistry of Semiconductor Materials and Interfaces XVII","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115598433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信