LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics最新文献

{"title":"Focused-ion-beam Micromachining Of Optical Surfaces In Semiconductor Laser Materials","authors":"R. Defreez","doi":"10.1109/LEOSST.1991.639001","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639001","url":null,"abstract":"Focused-ion-beam micromachining (FIBM) has been developed over the last five years as a fabrication tool for prototypal semiconductor lasers. FIBM exploits the precise, computer controlled, maskless, sputtering afforded by a beam of 15 25 keV Ga' ions focused to a 30 to 250 nm spot to fabricate optical quality surfaces in semiconductor laser dice and wafers. The focused beam of ions can be deflected under computer control over areas approaching 1 mm2 with a precision comparable to or smaller than the spot size. This allows the removal of material to form submicron features with optically smooth surfaces. A significant advantage of FIBM is that it is a completely maskless process and no photolithography, wet chemistry, or other processing is required. FIBM has been used to create several types of prototypal semiconductor laser structures. Single stripe coupled cavity lasers demonstrated widely and continuously tunable single mode operation1. Hundreds of milliwatts of pulsed optical power was observed from surface-emitting phase-locked arrays with FIBM turning and oscillator mirrors2. The use of vector scanning of the ion beam to produce arbitrary surface contours, such as linear and curved turning mirrors and micron pitch gratings with various profiles, was demonstrated3. Results from elevated temperature aging tests suggest that FIBM does not cause significant damage to transverse junction stripe laser diodes4. Recently, two-dimensionally coherent monolithic arrays of grating-surface-emitting semiconductor lasers in both serpentine5 and rings configurations have been fabricated using total-internal-reflection turning mirrors fabricated by means of a digitally scanned Ga' beam'. For the ring configuration, single longitudinal mode operation with a high degree of spatial coherence between two columns of two-dimensional grating-surface-emitting diode laser arrays and a narrowing of the lateral far-field pa.ttern were observed, Most recently, the very high quality surfaces created by FIBM were exploited to fabricate low magnification unstable resonator semiconductor lasers which operate in a nearly-diffraction-limited mode to five times lasing threshold and to record optical powers (1 W, double facet)8. Attempts to re-create these structures with reactive ion etching of various curvature mirrors have met only limited success in large part, it is","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115036785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Prospects For Blue/green Light Emitters Based On II-VI Semiconductors","authors":"J. Schetzina","doi":"10.1109/LEOSST.1991.638931","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638931","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"7 35","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120927863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study On The Feasibility Of GalnP/AiGaInP Quantum Wire Lasers","authors":"G. Lehr, R. Bergmann, M. Moser, M. Geiger, J. Hommel, F. Scholz, H. Schwetier","doi":"10.1109/LEOSST.1991.639028","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639028","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121941681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-damage Dry Etching Of Optoelectronic Devices: Assessment And Solutions","authors":"E. Hu","doi":"10.1109/LEOSST.1991.639004","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639004","url":null,"abstract":"We will discuss various assessments of dry-etch induced damage. There is evidence that ions of even moderate energy can produce damage that extends fairly deeply into the material. These problems are aggravated for low-dimensional devices, where enhanced surface recombination due to unpassivated surfaces with chemisorbed species may pose a problem. Possible solutions will be treated, such as low energy, electronor photon-initiated etching.","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128928836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reactive Ion Etching GaAs Vertical-cavity Surface Emitting Lasers","authors":"K. Choquette, G. Hasnain, Y.H. Wang, R. Freund, A. Cho, R. Leibenguth","doi":"10.1109/LEOSST.1991.639010","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639010","url":null,"abstract":"A vertical-cavity surface emitting laser (SEL) consists of a laser diode between two highly reflective mirrors. SELs incorporating distributed Bragg reflectors (DBR) surrounding quantum well active layers and fabricated by ion implantation and dry etching have been demonstrated.1 Monolithic integration of photodiodes using these techniques has also been accomplished.2 A promising device structure is a buried active region with larger bandgapbower index material regrown around the SEL. Fabrication of these and other SEL device configurations requires a simple, low damage, and anisotropic etching technique. We have investigated a low damage reactive ion etching (RIE) process3 and have applied it to GaAs SEL fabrication. The laser material is grown by molecular beam epitaxy and is composed of a lower n-type DBR (AlGaAs/AlAs multilayers), an undoped graded index active region with three GaAs quantum wells, and a top p-type DBR,2 as sketched in Figure 1. Gold circular dots (5, 10, and 20 pm diameter) and rings (inner/outer diameter of 10/20 pm) are defined to serve as etch masks as well as electrical contacts. A Si02 window protects the center of the rings during etching. A PlasmaLab diode reactor is used where the powered lower electrode is covered by a quartz plate and is cooled to -15°C. RIE with 10 sccm of S i c 4 at a pressure of 5x10-3 torr and RF (13.56 MHz) power density of 0.16 W/cm2 yields an etch rate of approximately 0.1 pm/min. A selfbias of 50 volts develops during the etch. We have found these conditions yield ion-stimulated etching exhibiting anisotropic vertical sidewalls with low ion damage.3 As shown in Figure 1, the shallow etches (2.4 pm) are nearly through the bottom of the top DBR, while for the deep etches (7.0 pm) the entire laser structure is etched through. No current confinement (e.g. by ion implantationlY2) is used for the shallow etched lasers. Pulsed and cw emission is measured from the front side of the wafer for the ring-contact lasers, while scattered light from the pillar sides of the metal-topped dot SELs is monitored under pulsed conditions. The threshold current, Ith, under pulsed conditions (200 nsec pulses at 100 kHz) for dot and ring SELs fabricated from the same wafer is plotted in Figure 2. Notice Ith varies approximately linearly with laser diameter indicating that loss mechanisms strongly influence the operation of these lasers. From Figure 2 we observe the loss for the shallow and deep etched SELs are comparable under pulsed excitation. Loss in the shallow lasers arises from diffraction due to the index variation along the laser cavity and from current spreading away from the laser active region. Nonradiative recombination dominates the loss of the deeply etched SELs due to the high surface recombination velocity, s, of GaAs. Assuming","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125491812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Digital-like Monolayer Epitaxy Of GalnAs On","authors":"H. Kawanishi, H. Ikeda","doi":"10.1109/LEOSST.1991.638923","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638923","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131932738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Vacuum Lithography For Nanostructure Fabrication Using Finely Focused Ion Beams","authors":"L. Harriott","doi":"10.1109/LEOSST.1991.639019","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639019","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133061930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Very Low Threshold Current OMCVD Grown AiGaInAs Buried Heterostructure Quantum Well A Novel Etching Technique","authors":"A. Kasukawa, R. Bhat, C. Caneau, N. Andreadakis, B. Pathak, C. Zah, M. Koza, T. Lee","doi":"10.1109/LEOSST.1991.638948","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638948","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133350933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"RIBE And RIE For Micro Cavity Surface Emitting Lasers Technology And Damage Characterization","authors":"K. Iga, F. Koyama, A. Matsutani","doi":"10.1109/LEOSST.1991.639008","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639008","url":null,"abstract":"The vertical cavity surface emitting laser diode (VC-SELD)' has begun to be considered as an important device for parallel optoelectronic applications. Ultra low threshold operation and spontaneous emission control of VC-SELD is expected by introducing a microcavity structure. In order to realize such a microcavity laser, microfabrication of the cavity including multilayer reflectors is one of key technologies. To reduce the diffraction and scattering losses, it is necessary to fabricate a micro reflector with a steep and smooth side wall. So, we have introduced a CFCRIE for a SiOfli02 multilayer reflector and Cl2-RIBE to etch semiconductor multilayer. Figure 1 shows an SEM photograph of SiOfliO, (7pair, D=5pm) circular array pattern etched by RIE. We adopted Teflon target to etch the multilayer with anisotropic shape. The active layer in the DH wafer has no RIE-induced damage. Also, the damage of cladding layer is relaxed by annealing in a H2 gas.2 This micro-mirror has been used in GaAdGaAlAs SE lasers resulting in the threshold 18mA, for a 6pm@ bulk active region? Next, we have clarified the etching mechanism of GaAs and InP in C12-RIBE! Figure 2 shows the measured etching rates for GaAs and InP against extraction voltage V . We proposed the etching rate R expression using three parameters: We can illustrate the effect of the coefficient A , B , and C by means of an \"ABC diagram\". Figure 3 (a) and (b) show the result of 100°C GaAs and InP at 200V, respectively. The axis A expresses the effect of RIE-like etching, the axis B expresses the effect of IBE-like, and the axis C expresses the effect of chemical-etch-like. From these figures, it is understood that at low temperature, InP is etched more strongly than GaAs by physical sputtering. This is consistent with the fact that the boiling point of indium chloride is higher than that of gallium chloride. We also measured the etch rate of GaInAsP (%=1.3pm). The etch rate of GaInAsP is in proportion to V 5/2 and V 3/2 at 100°C and 170\"C, respectively. We etched the GaInAsP/LnP multilayer in RIE-like condition. The straight side wall was obtained, although the etch rate of GaInAsP is quite different from that of InP. Figure 4 shows an SEM photograph of the circular array pattern (D=5pm, pitch=lOpm) made on a GaInAsPhI' DH wafer etched by RIBE. This wafer was etched in the RIE-like condition. The different etch profile originated from pattern density was observed at the edge and center of pattern. We have also investigated the RIBE induced damage of a InP substrate by a C-V measurement and tried to remove the damage layer by two step RIBE (Fig. 5). Although an increase of carrier concentration is caused by RIBE, the damage layer can be removed by the 2nd RIBE. In future, a damage-less dry etching process may be expected by adopting the optimized condition of the proposed two step RIBE. Smoothing of surface roughness after the second soft dry etch is also expected. R = A V 3/2 (RIE-like) + B V 5/2 (IBE","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114669982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication Of Silica Waveguides On Silicon","authors":"R. Kazarinov, C. Henry","doi":"10.1109/LEOSST.1991.638985","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638985","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116435864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}