The Open Applied Physics Journal最新文献

Measurement of Microclimate within Clothing Using the Combination Technique of Infrared Ray Absorption Method And Holographic Interferometry 红外吸收法与全息干涉法相结合的服装内小气候测量技术

The Open Applied Physics Journal Pub Date : 2012-11-30 DOI: 10.2174/1874183501205010054

T. Ninagawa

引用次数: 1

Convergence Estimates for a Linear Backward Euler Scheme for the Saturation Equation 饱和方程线性后向欧拉格式的收敛性估计

The Open Applied Physics Journal Pub Date : 2012-09-05 DOI: 10.2174/1874183501205010041

Koffi B. Fadimba

引用次数: 1

Suspended Tunnel Junction Bolometers For Terahertz Range 用于太赫兹范围的悬挂式隧道结辐射热计

The Open Applied Physics Journal Pub Date : 2012-07-13 DOI: 10.2174/1874183501205010034

A. Timofeev, P. Helistö, L. Grönberg, A. Luukanen, H. Seppä, J. Hassel

引用次数: 2

Thermal Mechanisms of Stable Macroscopic Penetration of Applied Currents in High Temperature Superconductors and their Instability Conditions 外加电流在高温超导体中宏观穿透稳定的热机制及其不稳定条件

The Open Applied Physics Journal Pub Date : 2012-03-21 DOI: 10.2174/1874183501205010010

V. Romanovskii

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引用次数: 1

Schottky Barrier Parameters and Interfacial Reactions of Rapidly Annealed Au/Cu Bilayer Metal Scheme on N-type InP n型InP上快速退火Au/Cu双层金属结构的肖特基势垒参数和界面反应

The Open Applied Physics Journal Pub Date : 2012-03-08 DOI: 10.2174/1874183501205010001

V. Devi, I. Jyothi, V. Reddy, Chel-Jong Choi

{"title":"Schottky Barrier Parameters and Interfacial Reactions of Rapidly Annealed Au/Cu Bilayer Metal Scheme on N-type InP","authors":"V. Devi, I. Jyothi, V. Reddy, Chel-Jong Choi","doi":"10.2174/1874183501205010001","DOIUrl":"https://doi.org/10.2174/1874183501205010001","url":null,"abstract":"The influence of rapid thermal annealing effect on the electrical and structural properties of Au/Cu Schottky contacts on n-InP has been investigated by the current-voltage (I-V), capacitance-voltage (C-V), auger electron spectroscopy (AES) and the X-ray diffraction (XRD) techniques. As-deposited sample has a barrier height of 0.64 eV (I- V), 0.76 eV (C-V) which increases to 0.82 eV (I-V), 1.04 eV (C-V) after annealing at 400°C for 1min in nitrogen ambient. However, the barrier height decreases to 0.75 eV (I-V), 0.88 eV (C-V) after annealing at 600°C for 1min. Norde method is also employed to calculate the barrier heights of Au/Cu Schottky rectifiers and the values are 0.66 eV for as-deposited, 0.83 eV for 400°C and 0.76 eV for 600°C annealed contacts. These values are in good agreement with the values obtained from I-V method. From the above observations, it is clear that the Schottky barrier height increases with annealing temperatures up to 400°C. Thus, the optimum annealing temperature for the Au/Cu Schottky contact is 400 o C. Based on the AES and XRD results, the formation of indium phases at the Au/Cu/n-InP interface may be responsible for the increase in the barrier height for the contact annealed at 400°C and a corresponding decrease in leakage current. The decrease in the barrier height after annealing at 500 o C may be due to the formation of Cu-P and Au-P interfacial compounds at the interface. The AFM results showed that the surface morphology of Au/Cu Schottky contact is fairly smooth even after annealing at 500°C.","PeriodicalId":433305,"journal":{"name":"The Open Applied Physics Journal","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125875229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 23

Microplasmas: A Review 微等离子体:综述

The Open Applied Physics Journal Pub Date : 2011-12-30 DOI: 10.2174/1874183501104010045

A. Papadakis, S. Rossides, A. Metaxas

引用次数: 52

Deposition and Characterizations of ZnO Thin Films on Al2O3 (0001) Substrates with III-Arsenide Intermediating Layers ZnO薄膜在Al2O3(0001)基底上的沉积与表征

The Open Applied Physics Journal Pub Date : 2011-07-25 DOI: 10.2174/1874183501104010041

H. Liu, S. Chua, G. Hu, H. Gong

引用次数: 4

Reduction of Electron Concentration in Lightly N-Doped n-Type 4H-SiC Epilayers by 200 keV Electron Irradiation 200 keV电子辐照降低轻氮掺杂n型4H-SiC薄膜电子浓度

The Open Applied Physics Journal Pub Date : 2011-05-11 DOI: 10.2174/1874183501104010037

Hideharu Matsuura, H. Yanagisawa, K. Nishino, Takunori Nojiri, Yoshiko Myojin, Y. Matsuyama, S. Onoda, T. Ohshima

引用次数: 0

Interface Modification for Tuning the Contact Resistance of Metal/ Organic Semiconductor Junctions 调整金属/有机半导体结接触电阻的界面修饰

The Open Applied Physics Journal Pub Date : 2011-03-24 DOI: 10.2174/1874183501104010002

G. Horowitz

引用次数: 12

Metal-based Inkjet Inks for Printed Electronics 印刷电子用金属基喷墨油墨

The Open Applied Physics Journal Pub Date : 2011-03-24 DOI: 10.2174/1874183501104010019

A. Kamyshny, J. Steinke, S. Magdassi

引用次数: 368