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A 4 GHz TWT Repiaceable GaAs MFSFET Amplifier 一种4ghz行波管可替换GaAs mfset放大器
1978 8th European Microwave Conference Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332549
Y. Arai, Shin-ichi Murai, Hidemitsu Karnizo
{"title":"A 4 GHz TWT Repiaceable GaAs MFSFET Amplifier","authors":"Y. Arai, Shin-ichi Murai, Hidemitsu Karnizo","doi":"10.1109/EUMA.1978.332549","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332549","url":null,"abstract":"A 4 GHz 10 watt MESFET anplifier for replacerrent of a Traveling-Wave-Tube amplifier has been developed. The anplifier consists of a herrretically sealed five stage anplifier rrodule using GaAs MFSFET chips and DC power supply. The anplifier provides an output power of 10 watts at 1 dB gain conpression, a linear gain of 39 dB and a power efficiency of 18 percent over the operating frequency range from 3.6 GHz to 4.2 GHz.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114936665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Guiding Characteristics and Radiation Characteristics of Planar Waveguides 平面波导的导向特性和辐射特性
1978 8th European Microwave Conference Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332520
H. Ermert
{"title":"Guiding Characteristics and Radiation Characteristics of Planar Waveguides","authors":"H. Ermert","doi":"10.1109/EUMA.1978.332520","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332520","url":null,"abstract":"Planar waveguides like microstrip and microslot have been used not only as waveguides but also for radiation purposes (microstrip antenna). Therefore, the paper tries to give a clear description of waveguide characteristics as well as radiation characteristics of planar waveguides. The difference between the several modes, i. e. the guided modes, the radiation modes and the leaky waves are clarified. Moreover, computed results as well as experimental results of different mode characteristics are presented.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"306 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116686205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Large Signal Calculations of Si, GaAs and InP Baritt Diode Performances in X and Q Band Si, GaAs和InP二极管在X和Q波段性能的大信号计算
1978 8th European Microwave Conference Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332636
A. Vanoverschelde, G. Salmer
{"title":"Large Signal Calculations of Si, GaAs and InP Baritt Diode Performances in X and Q Band","authors":"A. Vanoverschelde, G. Salmer","doi":"10.1109/EUMA.1978.332636","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332636","url":null,"abstract":"The capabilities of Baritt diodes in the millimeter wave range and the effects of the electron velocity versus field dependence in GaAs and InP are investigated. The influences of doping profile and material parameters are analysed by means of an exact large signal simulation. At millimeter frequencies, the Si Baritt r.f. power remains limited due to the small value of the negative resistance. This resistance is greatly improved by using GaAs or InP N+P N N+ structures; thus, better available power and efficiency can be expected. The InP material is found to be better than GaAs, because the r.f. levels can be higher and the diffusion phenomenon effect is smaller.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131191643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Galerkin - Method Calculation of the Propagation Constant in a Gyroelectric Inhomogeneous Waveguide 伽辽金法计算陀螺电非均匀波导中的传播常数
1978 8th European Microwave Conference Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332494
E. Pic, H. Luong
{"title":"Galerkin - Method Calculation of the Propagation Constant in a Gyroelectric Inhomogeneous Waveguide","authors":"E. Pic, H. Luong","doi":"10.1109/EUMA.1978.332494","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332494","url":null,"abstract":"A Galerkin-method calculation is presented for propagation study in a semiconductor loaded waveguide with transverse magnetization. The surface impedance tensor of the semiconducting plate is first evaluated from transmission-line theory. The boundary conditions on the plate are then expressed through this surface impedance tensor, leading to two coupled Fredholm integral equations with two unknown functions, the longitudinal electric and magnetic fields components. This system is solved for the propagation constant by the Galerkin method. Numerical results are given and compared with preceding results which other authors obtained from Schelkunoff method. The proposed method seems well suited for high mobility, high conductivity semiconductors.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134312476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Frequency Tuning of TRAPATT Oscillators Using Ferrimagnetic Resonators 利用铁磁谐振器对TRAPATT振荡器进行频率调谐
1978 8th European Microwave Conference Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332637
S. Longley, P. L. Booth
{"title":"Frequency Tuning of TRAPATT Oscillators Using Ferrimagnetic Resonators","authors":"S. Longley, P. L. Booth","doi":"10.1109/EUMA.1978.332637","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332637","url":null,"abstract":"The fundamental frequency of a pulsed TRAPATT S-band oscillator on an alumina MIC has been tuned electronically by changing individually the loading of the second and third harmonic terminations. This was realised with modified YIG polycrystalline spheres, (to overcome limiting), semi-loop coupled in shunt with an Evans type, TDT, TRAPATT circuit via an open circuited quarter wave transmission line at the harmonic frequency. Pulsed output powers of 40 W with harmonic tuning of the fundamental frequency in excess of 125 MHz (5%) with a power variation of ±0.2 dB have been measured.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133028216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Applications of Impedance Transformation Property for Analysis and Measurements of Microwave Networks with Variable Elements 阻抗变换特性在变元微波网络分析与测量中的应用
1978 8th European Microwave Conference Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332553
T. Morawski, J. Modelski
{"title":"Applications of Impedance Transformation Property for Analysis and Measurements of Microwave Networks with Variable Elements","authors":"T. Morawski, J. Modelski","doi":"10.1109/EUMA.1978.332553","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332553","url":null,"abstract":"This paper describes the methods of analysis and measurements of microwave networks employing variable elements without the knowledge of the equivalent circuits or elements of the network matrix. Described methods are the consequence of the general theorem about the impedance change factor properties. Applications of this factor for measuring: the cutoff frequency of varactor and PIN diodes, the efficiency of the two port loaded with known variable impedance, and losses of the phase modulators are presented. Measurement results of the varactor linear phase modulator losses are given","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127696392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of Some Three-Dimensional Microstrip Discontinuities in Terms of Frequency 基于频率的三维微带不连续分析
1978 8th European Microwave Conference Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332523
A. Ros, T. Jarkas, D. Pompei
{"title":"Analysis of Some Three-Dimensional Microstrip Discontinuities in Terms of Frequency","authors":"A. Ros, T. Jarkas, D. Pompei","doi":"10.1109/EUMA.1978.332523","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332523","url":null,"abstract":"In the earty seventies, JOHNS introduced the Transmission Line Matrix (T.L.M.) Method. More recently AKHTARZAD applied this technics to some resonant cavities problems. Using this method, we have studied microstrip discontinuities such as the transition between two microstrip lines of different widths. This discontinuity can be caracterized by an equivalent circuit using lumped parameters. The values of these parameters, in the case of a loss less line have been computed in terms of frequency. The effect of the discontinuity with regard to its position from the ends of the line is observed. The limit case when one of the line width tends to zero shall be presented at the conference. The theorical results can be compared with some experimental ones and with other datas yet published in the litterature.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121234185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High Performance GaAs Schottky Barrier Diodes using a Cantilevered Metal Contact 采用悬臂式金属触点的高性能砷化镓肖特基势垒二极管
1978 8th European Microwave Conference Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332611
D. Boccon-Gibod, P. Harrop
{"title":"High Performance GaAs Schottky Barrier Diodes using a Cantilevered Metal Contact","authors":"D. Boccon-Gibod, P. Harrop","doi":"10.1109/EUMA.1978.332611","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332611","url":null,"abstract":"A planar Schottky diode of original structure has been developed using a suspended contact between the active diode area and the ohmic contact to increase the device cut-off frequency and make a low cost reliable device. Self-alignment techniques were used to define the active diode area. Cut-off frequencies in excess of 2 000 GHz have been measured and series resistances around 1.3 ohms. The diodes have been used in waveguide and microstrip mixer structures and conversion loss measurements will be presented.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121288918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Field Desoription for Multi-Slot Fin-Line Struotures 多槽鳍线结构的场描述
1978 8th European Microwave Conference Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332521
A. Saad, K. Schunemann
{"title":"Field Desoription for Multi-Slot Fin-Line Struotures","authors":"A. Saad, K. Schunemann","doi":"10.1109/EUMA.1978.332521","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332521","url":null,"abstract":"A generalized fin-line structure is analyzed, which shows several slots in the metal coating of the substrate. Possible applications of such a structure are e.g. directional couplers and 3 dB hybrids. Out-off frequencies, phase constants, and electric and magnetic field patterns are calculated by a numerical approximation method. Results are presented for the specialized cases of isolated and earthed finlines both with one and two slots of varying width. As an application, the calculated and measured performance of a bandstop filter is given.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129361312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Fast Sampling Microwave Frequency Counter 一种快速采样微波频率计数器
1978 8th European Microwave Conference Pub Date : 1978-10-01 DOI: 10.1109/EUMA.1978.332585
M. Sarhadi, C. Aitchison, M. Underhill
{"title":"A Fast Sampling Microwave Frequency Counter","authors":"M. Sarhadi, C. Aitchison, M. Underhill","doi":"10.1109/EUMA.1978.332585","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332585","url":null,"abstract":"A three-sampler frequency conversion technique is proposed for use in frequency counters. Its measurement range extends into the microwave frequency region without the long acquisition times associated with the conventional microwave translation techniques. An algorithm has been developed which can be executed at very low speed using a microprocessor or low speed digital circuitry.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116974486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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