{"title":"Magnetic tunneling junction devices for non-volatile random access memory","authors":"S. Parkin","doi":"10.1109/INTMAG.1999.837836","DOIUrl":"https://doi.org/10.1109/INTMAG.1999.837836","url":null,"abstract":"","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125171366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Analytical expression of readback response for double laye perpendicular disks for mr head reading","authors":"H. Muraoka, Y. Sugita, Y. Nakamura","doi":"10.1109/INTMAG.1999.837807","DOIUrl":"https://doi.org/10.1109/INTMAG.1999.837807","url":null,"abstract":"Introduction The authors demonstrated a narrow PW, of 130 nm with a differentiator and an AMR head in perpendicular magnetic recording, and showed that the response is almost determined by the MR head [l]. The waveform was calculated by the reciprocity theorem in association with the head sensitivity function for the MR head and perpendicular disk, which was based on Fan's equation [2]. However, since the equation consists of an infinite integration and an infinite series, a relatively complicated numerical calculation may be required. In addition lo this, few wmparisons between the theoretical solution and experimental results have been carried out. It is not still clear what determines the waveform for a given h e d d i s k system. In this paper, an approximated simpler expression of the head sensitivity function is provided to calculate the isolated transition response in perpendicular magnetic recording. An analysis of the experimenlal waveform is also presented.","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125181726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Tokuyama, Y. Katou, J. Shimizu, S. Hirose, Y. Kojima, B. Nishida
{"title":"Development of shockproof suspension","authors":"M. Tokuyama, Y. Katou, J. Shimizu, S. Hirose, Y. Kojima, B. Nishida","doi":"10.1109/INTMAG.1999.837986","DOIUrl":"https://doi.org/10.1109/INTMAG.1999.837986","url":null,"abstract":"Introduction Improving shockproof churacteristics at the head-disk interface in compact magnetic-disk devices has become indispensable to achieving higher levels of portability and reliability. It has been reported that the disk surface in magnetic-disk devices becomes damaged by the four corners of the slider when the slider jumps and re-contacts the surface due to an extemal shock [I]. Some methods have been proposed to reduce such damage, such as incorporating a \"jump stop\" mechanism on top of the slider to shorten the height of the jump, and reducing the equivalent mass of the suspension to increase the acceleration of the slider's jump [Z]. This paper reports on the development of a suspension that can improve shockproof chcte@stics by controlling slider orientation when re-contacting the disk surface.","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122523960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. David, J. Santisteban, R. de Andrade, R. Stephan, A. Ripper, R. Nicolsky
{"title":"Magnetic bearing for inuction machine using active radial electromagnetic and passive axial superconducting components","authors":"D. David, J. Santisteban, R. de Andrade, R. Stephan, A. Ripper, R. Nicolsky","doi":"10.1109/INTMAG.1999.837570","DOIUrl":"https://doi.org/10.1109/INTMAG.1999.837570","url":null,"abstract":"Domirgos David', lose A Santisteban', Rubens de Andrade Jr', Richard M Stephan., A. Ripper', and Roberto Nicolsky.' ' P E U C O P P W , Cx P 68504, Rio de Janeiro 21945-970, Rio de Janeiro, Brazil -DEE/EERIFRI. Cx P 6851 5 , Rio de Janeiro 21945-970, Rio de Janeiro, Brad 'PW~OPPWL'RI , Cx P. 68504, Rio de Janeiro 21945-970. Rio de Janeiro, Bra01 Dep. Eng Mminica, UFF, Rua Passo da Patria 156, 24210-240.Brad 'Institute de Fisica, UFRI, Cx P 68528, Rio de Janeiro, 21945-970, Brazil","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131238887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Dynamic swrfching characteristics of pseudo-spin vavle memeroy elements","authors":"T. Fang, J. Zhu","doi":"10.1109/INTMAG.1999.837969","DOIUrl":"https://doi.org/10.1109/INTMAG.1999.837969","url":null,"abstract":"Inlroducrion In practical MRAM device design. pulsed wnnlline and sensc line curreo~s arc implemented to control the read and mile cycler uf thc memory devices[ 11,[21. Thus, it is cmcial to undenmd the dynanuc magnetic charactcriatics of the memory clcmenls. For this purpose, wnvcntional cnergy nunimization modcling scheme no longer is valid when wordline current field nc‘ in a comparable time scale with magnetization relmatiun. In this paper, the modcling of MRAM switching dynamir propenies i carricd out by combining the Landau-Lifshiu equauon with thc clawc micromagnetic theory Specifically. reduction of hard layer switching field for a memory element due io fast rising wordline field is studied since this imponant ctfect could he directly utilized for reducing device power consumpiion","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131410008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shuxiang Li, V. Soares, J. Bernardo, F. Silva, Jianguo Wang, P. Freitas
{"title":"Planarization and apex angle control for write head fabrication using SOG","authors":"Shuxiang Li, V. Soares, J. Bernardo, F. Silva, Jianguo Wang, P. Freitas","doi":"10.1109/INTMAG.1999.837711","DOIUrl":"https://doi.org/10.1109/INTMAG.1999.837711","url":null,"abstract":"In write head fabrication, polyimide resin or photosensitive resin are often used to isolate conductor wils fmm the top yoke layers. To obtain top yoke films with excellent soft magnetic properties (high permeability, low coercivity and low magnetostriction), planarization is needed. Spin-on-glass (SOG) is widely used for interlevel dielectric planarization in submicron integrated circuits fabrication. In this work, the process of planarization and apex angle control is developed using a PECVD/SOG/PECVD stack as millyoke insulator.","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131442769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Mechanical residual stress measurement for chromium, magnetic, and carbon films","authors":"G. Peng, Fangyi Wu, Judy Lin","doi":"10.1109/INTMAG.1999.837433","DOIUrl":"https://doi.org/10.1109/INTMAG.1999.837433","url":null,"abstract":"Inmduction Ultra thin films, in the thickness range of 10 nm to 30 nm, such as chromium, magnetic layer and carbon overcoat, become even thinner for today's hard drive disk due to the demanding of exmeme high drive pafonoances. The residual stresses in these films are impatant for the stresses in metal films mfluence the recording perfomanees, while the stress in carbon film strongly af€ect the disk's tribology, particularly the nackinglfatigue, and corrosion performances. a betta disk design and better process design and control. Unfortunately, there is few studies on this subject. n e most commonly methods used for measuring stress in thin film are mechanical detledon and X-ray diffraction [ I ] and for amorphous carbon, only the deflection method is valid. We have developed a procedure to directly measure the stress in thin film on a real disk, having a center hole, by an optical interferometer. The res& are fiutha confirmed with an optical linear surface protiler. The calculations for the final stresses of these films, single and double layer asymmetric films, are consistent to each other.","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126994603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Kataoka, E. Fujita, D. Djayaprawira, Y. Matsuda
{"title":"Time domain noise measurements of the media on aliminum and glass substrates","authors":"H. Kataoka, E. Fujita, D. Djayaprawira, Y. Matsuda","doi":"10.1109/INTMAG.1999.837504","DOIUrl":"https://doi.org/10.1109/INTMAG.1999.837504","url":null,"abstract":"Inaoduction Reduction of the media noise i s one of the major issues for high drnrity reconling. Since the media noise powcr increases linearly with recording density. both dc-erase noisc and msi t i on noise have to be reduced in relatively lower densir) region. The track cdgc noise IS also imponmi at high uack den.ity, therefore these noise have to be scparrtely evaluated and techniques for reduction of each typc of noise have to bc deelopcd. The purpose of this study is to understand the nature of dc-erase noise and vansition noise and to compare the media formed on NiP,AI and glass wbsuate with time domain measurement on these aspects.","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"70 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127588495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The transverse incremental permeability and magnetoimpedance effect in mumetal thin films","authors":"W. Cho, Chong‐Oh Kim, H. Lee","doi":"10.1109/INTMAG.1999.837357","DOIUrl":"https://doi.org/10.1109/INTMAG.1999.837357","url":null,"abstract":"Result and Discussion The magneto-impedance ratio (MIR) can be defined as M E t H ) = d Z / Z ( H , . ) = , 1Iz(H)/z( H , ) I and the permeability ratio (PR) is defined by PR(H)=&(H)/P( H,)= 1I p ( M / p ( H,) I . And also the transverse permeability ratio (TPR) is defined as the PR measwed in the perpendicular direction to the external field. The frequency dependence of MIR in the sample has shown a typical behavior where the maximum values of MIR are increased up to 22.5MHz and then decreased with the increment of the frequency[ll as shown in Fig. 1. This behavior is very similar to the frequency dependence of TPR as shown in Fa. 2. The similar behavior can be explained that the MI is proportional to ( w ~ d ~ ' ~ , and p m is considered to be proportional to TPR. The MIR is increasing up to lOmA and then decreasing with the increment of the driving current as shown in the Fig. 3. The driving current dependence of TPR as a function of the driving current is also shown in Fig. 4.","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127962274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Qian, H. Tong, F.H. Liu, X. Shi, S. Dey, R. Proksch, P. Nielson
{"title":"Characterization of higher density spin valve recording head by magnetic force microscope","authors":"C. Qian, H. Tong, F.H. Liu, X. Shi, S. Dey, R. Proksch, P. Nielson","doi":"10.1109/INTMAG.1999.837403","DOIUrl":"https://doi.org/10.1109/INTMAG.1999.837403","url":null,"abstract":"Sensitivity Mapping (MSM) and high frequency MagneticForce Microscope (HFMFM) measurement on merged readerlwriter spin valve heads of density > I 3GbriZ with a modified Magnetic Force Microscope (MFM) A spin valve head designed for such high area density and high data rate (>zO MB/sec) requires a reader with a track width in the submicrometer region and a fast writer that responses to frequency over 100 MHz[ I]. To understand the fundamental mechanism of the head, we noed a t d n i q u e to charact& the performance of both reader and writer with sufficient spatial resolution and adequate temporal resolution. Furthermore, the characterization should be independent of disk media and the complicated real head-media interface. MSM and HFMFM provide just such tools to meet these requirements.","PeriodicalId":425017,"journal":{"name":"IEEE International Magnetics Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133738158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}