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IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012)最新文献

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Diamond field-emission cathodes 金刚石场致发射阴极
IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012) Pub Date : 2002-08-06 DOI: 10.1109/ivmc.1995.487048
M. Geis, J. Twichell, N. Efremow, K.E. Ekrohn, C. Marchi, T. Lyszczarz
{"title":"Diamond field-emission cathodes","authors":"M. Geis, J. Twichell, N. Efremow, K.E. Ekrohn, C. Marchi, T. Lyszczarz","doi":"10.1109/ivmc.1995.487048","DOIUrl":"https://doi.org/10.1109/ivmc.1995.487048","url":null,"abstract":"Summary form only given. Diamond has several properties that give it unique advantages for use in field-emission cathodes. Diamond is the only known air-stable negative electron affinity (NEA) material. This NEA property may allow for field emission at very low electric fields. The inherent structural integrity of the covalently bonded carbon lattice in diamond makes possible more stable cathodes than can be obtained with metals. This presentation reports on initial experiments with diamond field-emission cathodes. Electron emission was characterized from both smooth and patterned regions on p-type, boron-doped homoepitaxial grown diamond on (100)-, (110)-, and (111)-oriented substrates. The measurements indicated a Fowler-Nordheim mechanism (tunneling through a barrier) with the effective barrier height varying as a function of the crystal orientation. The (100) crystals exhibited the largest barrier and the (111) crystals had the smallest barrier. Surface treatment with Cs improves emission and is not adversely affected by exposure to room air. Lithographically defined cathodes with grid structures have been fabricated and emit current near the minimum theoretical grid voltage, 5 V. These cathodes have emitted current densities of >10 A/cm/sup 2/ into vacuum with grid voltages less than 100 V.","PeriodicalId":412491,"journal":{"name":"IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115248984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Field emission display development and testing 场发射显示器的开发和测试
IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012) Pub Date : 1995-07-30 DOI: 10.1109/IVMC.1995.486978
J. Browning
{"title":"Field emission display development and testing","authors":"J. Browning","doi":"10.1109/IVMC.1995.486978","DOIUrl":"https://doi.org/10.1109/IVMC.1995.486978","url":null,"abstract":"Field Emission Displays (FEDs) can have significant advantages over existing display technologies, particularly in the area of small, high-resolution displays. Micron Display Technology (MDT) has been developing a high-resolution display for use in camcorder viewfinders, HMDs, and virtual reality headware. The display has characteristics which make it superior to the present LCDs which dominate the small color display market. The history of this display development, its advantages, and the display characteristics are discussed here. In addition, as FEDs move from prototypes into production, it becomes necessary to develop new technologies which enable production-level testing of these devices. A vacuum probe station has been developed for rapid testing of FED cathodes. This probe station is discussed.","PeriodicalId":412491,"journal":{"name":"IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115604197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Experimental confirmation of the Fowler Nordheim plot at several micro-meters emitter to anode distance 福勒-诺德海姆图在发射极到阳极距离几微米处的实验证实
IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012) Pub Date : 1995-07-30 DOI: 10.1109/IVMC.1995.487002
K. Ashihara, H. Nakane, H. Adachi
{"title":"Experimental confirmation of the Fowler Nordheim plot at several micro-meters emitter to anode distance","authors":"K. Ashihara, H. Nakane, H. Adachi","doi":"10.1109/IVMC.1995.487002","DOIUrl":"https://doi.org/10.1109/IVMC.1995.487002","url":null,"abstract":"The slope of a Fowler-Nordheim plot for field emission current has a tendency to decrease with decreasing emitter to anode distance at a micro-meter range. Fairly good coincidence of the tendency between the experimental results and the numerically calculated ones confirms that the Fowler-Nordheim equation is still effective for such a short emitter to anode distance as less than one micro-meter.","PeriodicalId":412491,"journal":{"name":"IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116927372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A graded electron affinity field emission electron source 一种梯度电子亲和场发射电子源
IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012) Pub Date : 1995-07-30 DOI: 10.1109/IVMC.1995.487090
J. Shaw, T. Jung, H. Gray
{"title":"A graded electron affinity field emission electron source","authors":"J. Shaw, T. Jung, H. Gray","doi":"10.1109/IVMC.1995.487090","DOIUrl":"https://doi.org/10.1109/IVMC.1995.487090","url":null,"abstract":"We report electron affinity measurements suggesting that Ga/sub 1-x/Al/sub x/N has the characteristics needed to create an improved field emitter. By grading the composition from low to high Al mole fraction within a thin layer at the surface of a field emitter, the uniformity, noise, and emission modulation characteristics may be improved.","PeriodicalId":412491,"journal":{"name":"IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127273668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Computer simulation of field emission for multilayer cathodes 多层阴极场发射的计算机模拟
IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012) Pub Date : 1995-07-30 DOI: 10.1109/IVMC.1995.487046
V. Litovchenko, Y. Kryuchenko
{"title":"Computer simulation of field emission for multilayer cathodes","authors":"V. Litovchenko, Y. Kryuchenko","doi":"10.1109/IVMC.1995.487046","DOIUrl":"https://doi.org/10.1109/IVMC.1995.487046","url":null,"abstract":"Summary form only given. High efficiency of field emission can be achieved using an effect of electron spectrum quantization in a thin metal film coated emitter surface. Another way to realize this mechanism is the development of systems with built-in quantum wells, in particular, delta-doped layers. Here we have considered the case of multilayer quantum size structures with the number of quantum wells N more than 1. It turned out that in this case current-field characteristics have many important peculiarities due to the additional effect of electron resonant tunneling through the structure. The influence of quantum well and barrier parameters on emission currents is analyzed for different N. The conditions for efficient field emission at low applied voltages are found. Computer calculations are made for a multilayer Si-SiO/sub 2/ structure with the thicknesses of quantum wells and barriers d=3-5 nm. Results of calculations are compared with experiment.","PeriodicalId":412491,"journal":{"name":"IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126944025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ion bombardment sharpening of field emitter arrays 场发射阵列的离子轰击锐化
IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012) Pub Date : 1995-07-30 DOI: 10.1109/IVMC.1995.487023
O. Auciello, L. Yadon, D. Temple, J. Mancusi, G. Mcguire, E. Hirsch, H. Gray, C. Tang
{"title":"Ion bombardment sharpening of field emitter arrays","authors":"O. Auciello, L. Yadon, D. Temple, J. Mancusi, G. Mcguire, E. Hirsch, H. Gray, C. Tang","doi":"10.1109/IVMC.1995.487023","DOIUrl":"https://doi.org/10.1109/IVMC.1995.487023","url":null,"abstract":"First results are presented on controlled ion bombardment sharpening of ungated and gated field emitter arrays (FEAs). The initial results indicate that controlled ion bombardment can produce sharpening of emitter tips in very short periods of time while maintaining the FEAs at, or close to, room temperature.","PeriodicalId":412491,"journal":{"name":"IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012)","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122428701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Field emission characteristics of diamond coated molybdenum field emitters 金刚石涂层钼场发射体的场发射特性
IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012) Pub Date : 1995-07-30 DOI: 10.1109/IVMC.1995.487057
W. Choi, J. Liu, M. McClure, A. Myers, J. Cuomo, J. Hren
{"title":"Field emission characteristics of diamond coated molybdenum field emitters","authors":"W. Choi, J. Liu, M. McClure, A. Myers, J. Cuomo, J. Hren","doi":"10.1109/IVMC.1995.487057","DOIUrl":"https://doi.org/10.1109/IVMC.1995.487057","url":null,"abstract":"Diamond deposition on single Mo field emitters was studied following microwave plasma CVD and biased dipping in a solution of diamond powder. TEM and SEM observation revealed a significant amount of diamond on the tip of the Mo emitter. The field emission characteristics of the Mo emitters were investigated before and after diamond deposition and data were analyzed using Fowler-Nordheim theory. After diamond coating, the emission current was found to increase by more than one order of magnitude compared to that of the same uncoated emitter. An explanation of this behavior is proposed.","PeriodicalId":412491,"journal":{"name":"IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012)","volume":"219 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122849623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Si FEA with diamond coating for vacuum microelectronics devices 真空微电子器件金刚石涂层硅有限元分析
IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012) Pub Date : 1995-07-30 DOI: 10.1109/IVMC.1995.487053
E.I. Givargizov, N. Chubun, V. Zhirnov, A. N. Stepanova
{"title":"Si FEA with diamond coating for vacuum microelectronics devices","authors":"E.I. Givargizov, N. Chubun, V. Zhirnov, A. N. Stepanova","doi":"10.1109/IVMC.1995.487053","DOIUrl":"https://doi.org/10.1109/IVMC.1995.487053","url":null,"abstract":"Cold cathodes based on silicon field emitter arrays with diamond coatings were fabricated. The dimensions of cathodes were from 8/spl times/8 to 25/spl times/25 mm. The sealed FEA-biased diodes were fabricated and their emission characteristics were measured. The long-life tests have been performed during 40 h of operation.","PeriodicalId":412491,"journal":{"name":"IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122499366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Benefits of the lateral resistor in a FED 侧电阻在FED中的好处
IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012) Pub Date : 1995-07-30 DOI: 10.1109/IVMC.1995.486992
J. D. Levine
{"title":"Benefits of the lateral resistor in a FED","authors":"J. D. Levine","doi":"10.1109/IVMC.1995.486992","DOIUrl":"https://doi.org/10.1109/IVMC.1995.486992","url":null,"abstract":"A protective resistor in series with a microtip is known to homogenize field emission. It is not widely recognized, however, that this protective resistor must be fail-safe as well, since the microtips are exposed to rare but potentially destructive events during life. This paper addresses two proposed protective resistor concepts: (a) a vertical resistor located locally underneath each microtip, and (b) a lateral resistor radially distributed from the center of each microtip. It is shown by electrical and thermal analysis that the lateral resistor is significantly more fail-safe than the vertical resistor by factors of about 10/spl times/ and 100/spl times/, respectively.","PeriodicalId":412491,"journal":{"name":"IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116756775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Field emission from GaAs pyramids fabricated using selected area vapor phase epitaxy 选择面积气相外延制备的砷化镓金字塔的场发射
IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012) Pub Date : 1995-07-30 DOI: 10.1109/IVMC.1995.487077
J. Shaw, R.S. Sillmon, H. Gray, D. Park
{"title":"Field emission from GaAs pyramids fabricated using selected area vapor phase epitaxy","authors":"J. Shaw, R.S. Sillmon, H. Gray, D. Park","doi":"10.1109/IVMC.1995.487077","DOIUrl":"https://doi.org/10.1109/IVMC.1995.487077","url":null,"abstract":"We report the fabrication of GaAs pyramids using selected area organometallic vapor phase epitaxy (SA-OMVPE) and field emission characteristics obtained from these structures. The use of crystal planes to define structure surfaces offers an attractive way of fabricating atomically sharp tip apexes in field emitter arrays (FEAs). For example, diamond crystals typically form such sharp apex structures. To use crystal structures as field emitters in a FEA, the orientation and size of the crystal surfaces must be controllable and consistent over the array, and the crystal should have electronic properties compatible with field emission. When high transconductance or high emission currents are required, these electronic properties should include a low resistance electron injecting contact, high bulk conductivity, and a modest surface potential barrier for electron field emission. In addition, formation of the tip structure must be compatible with formation of an adequate gate aperture. III-V semiconductor crystals grown by SA-OMVPE may provide a material and fabrication system capable of satisfying all these requirements.","PeriodicalId":412491,"journal":{"name":"IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129589421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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