Semiconductor Lasers and Laser Dynamics X最新文献_第3页

Impact of strain-induced bow on the performance of VCSELs on 150mm GaAs- and Ge-substrate wafers 应变诱导弓对150mm GaAs和ge衬底上vcsel性能的影响

Semiconductor Lasers and Laser Dynamics X Pub Date : 2022-05-25 DOI: 10.1117/12.2624492

J. Baker, S. Gillgrass, T. Peach, C. Allford, J. I. Davies, A. Johnson, A. Joel, Sung Wook Lim, S. Shutts, P. Smowton

引用次数: 2

Mid-infrared integrated photonics on the InP platform InP平台上的中红外集成光子学

Semiconductor Lasers and Laser Dynamics X Pub Date : 2022-05-25 DOI: 10.1117/12.2623822

Kevin Zhang, D. Burghart, Alexander Gardanow, Rudolf Mayer, R. Meyer, G. Böhm, M. Belkin

引用次数: 0

Stochastic spectral reconstruction by chaotic laser emission 混沌激光发射随机光谱重建

Semiconductor Lasers and Laser Dynamics X Pub Date : 2022-05-25 DOI: 10.1117/12.2624082

A. Boschetti, D. Wiersma

引用次数: 0

High-speed VCSEL photonics for datacenter networks 数据中心网络的高速VCSEL光子学

Semiconductor Lasers and Laser Dynamics X Pub Date : 2022-05-25 DOI: 10.1117/12.2627093

F. Koyama

{"title":"High-speed VCSEL photonics for datacenter networks","authors":"F. Koyama","doi":"10.1117/12.2627093","DOIUrl":"https://doi.org/10.1117/12.2627093","url":null,"abstract":"We present a novel design of intracavity metal-aperture VCSELs toward high-speed and single-mode operations. The intracavity metal contact causes the transverse resonance which provides the modulation bandwidth enhancement. The small-signal modulation bandwidth can be double with a large mode-fi ld diameter of 10μm and single-mode operations. Introduction Vertical cavity surface emitting lasers (VCSELs) have exhibited the advantages of low cost, ease of fabrication into arrays, small footprint, waferscale testing, and low power consumption [1, 2]. Therefore, VCSELs are attracting much attention for use in data center networks. The network traffic in data centers is increasing rapidly and hence the development of high speed VCSELs is a key issue. The modulation bandwidth of VCSELs is typically less than ~ 20 GHz due to the limited intrinsic carrier-photon resonance (CPR) [3]. Therefore, many efforts have been done to push the modulation bandwidth of VCSELs further into the mm-wave band [4-14] However, there still remain difficulties in increasing the modulation bandwidth of singlemode VCSELs in comparison with multi-mode VCSELs, although single-mode VCSELs offer a longer link length of MM fibers thanks to narrower spectral widths. Also, the poor reliability has been a limiting factor for single-mode, small oxide aperture VCSELs. In this paper, we propose and demonstrate intracavity metal aperture VCSELs (MA-VCSEL) with a rectangular shaped oxide aperture. The fabrication process is exactly the same as intracavity contact VCSELs. We found that the intracavity metal contact causes the transverse resonance which provides the modulation bandwidth enhancement. We demonstrate the enhancement of the modulation bandwidth and single-mode operation thanks to the opticaltransverse coupled cavity effect. The mode-field diameter could be increased to 10 μm with stablesingle-mode operations. Device Structure Figure 1 (a) illustrates the schematic structure of the fabricated single-mode MA-VCSEL. The device is fabricated on a half-VCSEL wafer grown by MOCVD with 4 pairs of top p-type DBR. The active region includes three 850 nm quantum wells (3QWs). In order to form cavity structures, rectangular shaped mesas were formed by dryetching process and followed by wet-oxidation process. The size of an active region oxidation aperture is 9 x 10 m, as shown in Fig.1(b) which is large enough for high reliabilities. Polyamide was used for planarization and passivation. AuGe/Ni/Au was deposit d to form n-type electrodes. The p-type electrode (Au/Zn/Au) were deposited with a rectangular aperture. Finally, 8 pairs of dielectric Ta2O5/SiO2 were deposited above the surface of the mesas as a top hybrid DBR. We found that two lateral boundaries cause the transverse resonance as shown in Fig. 1(c). A key parameter is the distance d-W between two boundaries, which should be 1.5-2 μm to observe the transverse coupled cavity effect, we found.","PeriodicalId":412268,"journal":{"name":"Semiconductor Lasers and Laser Dynamics X","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134165606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Front Matter: Volume 12141 封面:第12141卷

Semiconductor Lasers and Laser Dynamics X Pub Date : 2022-05-20 DOI: 10.1117/12.2642759

引用次数: 0