2016 International Great Lakes Symposium on VLSI (GLSVLSI)最新文献_第9页

RRAM refresh circuit: A proposed solution to resolve the soft-error failures for HfO2/Hf 1T1R RRAM memory cell RRAM刷新电路:一种解决HfO2/Hf 1T1R RRAM存储单元软错误故障的方案

2016 International Great Lakes Symposium on VLSI (GLSVLSI) Pub Date : 2016-05-18 DOI: 10.1145/2902961.2903017

Amr M. S. Tosson, M. Anis, Lan Wei

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