发布求助
文献互助 智能选刊 最新文献

Low-Dimensional Materials and Devices 2018最新文献

筛选
英文 中文
Front Matter: Volume 10725 前题:10725卷
Low-Dimensional Materials and Devices 2018 Pub Date : 2018-10-15 DOI: 10.1117/12.2516176
{"title":"Front Matter: Volume 10725","authors":"","doi":"10.1117/12.2516176","DOIUrl":"https://doi.org/10.1117/12.2516176","url":null,"abstract":"","PeriodicalId":404810,"journal":{"name":"Low-Dimensional Materials and Devices 2018","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114391860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A combined experimental and theoretical approach to measure spatially resolved local surface plasmon resonances in aluminum nanocrystals (Conference Presentation) 一种测量铝纳米晶体空间分辨局部表面等离子体共振的实验与理论相结合的方法(会议报告)
Low-Dimensional Materials and Devices 2018 Pub Date : 2018-09-17 DOI: 10.1117/12.2322948
A. Bruma, Canhui Wang, Wei-Chang D. Yang, Dayne F. Swearer, N. Halas, Renu Sharma
{"title":"A combined experimental and theoretical approach to measure spatially resolved local surface plasmon resonances in aluminum nanocrystals (Conference Presentation)","authors":"A. Bruma, Canhui Wang, Wei-Chang D. Yang, Dayne F. Swearer, N. Halas, Renu Sharma","doi":"10.1117/12.2322948","DOIUrl":"https://doi.org/10.1117/12.2322948","url":null,"abstract":"","PeriodicalId":404810,"journal":{"name":"Low-Dimensional Materials and Devices 2018","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132485539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low symmetry two-dimensional materials: anisotropic optical properties and device application (Conference Presentation) 低对称性二维材料:各向异性光学特性及器件应用(会议报告)
Low-Dimensional Materials and Devices 2018 Pub Date : 2018-09-17 DOI: 10.1117/12.2323298
Han Wang
{"title":"Low symmetry two-dimensional materials: anisotropic optical properties and device application (Conference Presentation)","authors":"Han Wang","doi":"10.1117/12.2323298","DOIUrl":"https://doi.org/10.1117/12.2323298","url":null,"abstract":"","PeriodicalId":404810,"journal":{"name":"Low-Dimensional Materials and Devices 2018","volume":"34 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113938023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Van der Waals epitaxy of graphene and BiI3 heterostructures for dim light detection (Conference Presentation) 用于弱光探测的石墨烯和BiI3异质结构的Van der Waals外延(会议报告)
Low-Dimensional Materials and Devices 2018 Pub Date : 2018-09-17 DOI: 10.1117/12.2321279
Po‐Han Chang, Chia‐Shuo Li, Chih‐I Wu
{"title":"Van der Waals epitaxy of graphene and BiI3 heterostructures for dim light detection (Conference Presentation)","authors":"Po‐Han Chang, Chia‐Shuo Li, Chih‐I Wu","doi":"10.1117/12.2321279","DOIUrl":"https://doi.org/10.1117/12.2321279","url":null,"abstract":"","PeriodicalId":404810,"journal":{"name":"Low-Dimensional Materials and Devices 2018","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121751731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomic layer deposition of non-conformal low dimensional ZnO thin films (Conference Presentation) 非共形低维ZnO薄膜的原子层沉积(会议报告)
Low-Dimensional Materials and Devices 2018 Pub Date : 2018-09-17 DOI: 10.1117/12.2322002
Brian Giraldo, N. Kobayashi, David M. Fryauf
{"title":"Atomic layer deposition of non-conformal low dimensional ZnO thin films (Conference Presentation)","authors":"Brian Giraldo, N. Kobayashi, David M. Fryauf","doi":"10.1117/12.2322002","DOIUrl":"https://doi.org/10.1117/12.2322002","url":null,"abstract":"Ultra-thin ZnO films were grown by atomic layer deposition (ALD) at a temperature of 60C on Si substrates and Si substrates coated with ~20nm of Al2O3 also deposited via ALD at 60C. Ellipsometry indicated ZnO films ranging in thickness from ~0.5 nm to ~7 nm. Atomic force microscopy results showed ZnO nano-islands formed prior to the completion of conformal atomic layers. AFM scans of 1um and 10um areas were employed in this study. This low dimensional ZnO islanding phenomenon was observed in both substrate types but with different incubation periods. The ZnO nano-islands on both substrates varied in diameter from ~20nm to ~100nm, island height variation ranged from ~2nm to ~9nm. ZnO nano-island formation had little to no incubation period on the Si substrates treated with ~20nm of Al2O3, and island formation was observed within 10 ZnO ALD cycles and nano-island density peaked around 20 to 30 ZnO ALD cycles. The highest rms roughness measurement obtained was of 0.7756 nm and is attributed to high nano-island density. While on bare Si the incubation period is significantly longer with nano-islands taking greater than 50 ZnO ALD cycles to form and achieving highest rms roughness of 0.25 nm around 60-70 ZnO ALD cycles. These results demonstrate non-conformal ultra-thin film growth by ALD, a deposition method expected to yield conformal thin films.","PeriodicalId":404810,"journal":{"name":"Low-Dimensional Materials and Devices 2018","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128064441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Toward all-silicon optical receivers: photon trapping and manipulation using nanostructures (Conference Presentation) 面向全硅光接收器:利用纳米结构捕获和操纵光子(会议报告)
Low-Dimensional Materials and Devices 2018 Pub Date : 2018-09-17 DOI: 10.1117/12.2323457
H. Cansizoglu, Yang Gao, C. Pérez, S. Ghandiparsi, K. G. Polat, H. Mamtaz, Ekaterina Ponizovskaya Devine, Toshishige Yamada, A. Elrefaie, Shih-Yuan Wang, M. Islam
{"title":"Toward all-silicon optical receivers: photon trapping and manipulation using nanostructures (Conference Presentation)","authors":"H. Cansizoglu, Yang Gao, C. Pérez, S. Ghandiparsi, K. G. Polat, H. Mamtaz, Ekaterina Ponizovskaya Devine, Toshishige Yamada, A. Elrefaie, Shih-Yuan Wang, M. Islam","doi":"10.1117/12.2323457","DOIUrl":"https://doi.org/10.1117/12.2323457","url":null,"abstract":"","PeriodicalId":404810,"journal":{"name":"Low-Dimensional Materials and Devices 2018","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116195413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of off-stoichiometric aluminum nitride thin films: a simple method of fabricating distributed Bragg reflector for ultraviolet A by RF magnetron sputtering (Conference Presentation) 非化学计量氮化铝薄膜的研究:一种用射频磁控溅射制备紫外分布Bragg反射器的简单方法(会议报告)
Low-Dimensional Materials and Devices 2018 Pub Date : 2018-09-17 DOI: 10.1117/12.2322407
Faiza Anjum, David M. Fryauf, N. Kobayashi
{"title":"Study of off-stoichiometric aluminum nitride thin films: a simple method of fabricating distributed Bragg reflector for ultraviolet A by RF magnetron sputtering (Conference Presentation)","authors":"Faiza Anjum, David M. Fryauf, N. Kobayashi","doi":"10.1117/12.2322407","DOIUrl":"https://doi.org/10.1117/12.2322407","url":null,"abstract":"Aluminum nitride (AlN) thin films were studied to assess the dependence of their optical properties on their chemical and structural characteristics. The AlN thin films used for the study were deposited by RF magnetron sputtering with an aluminum nitride target reactively sputtered with a mixture of Ar and N2 gases.Resulting AlN thin films were further studied in the form of Distributed Bragg Reflector (DBR) that consists of stoichiometric AlN thin films (high-n layer) and an off-stoichiometric AlN thin films (low-n layer). The DBR was designed for the UV-A spectrum region exploiting negligible extinction coefficient of these AlN thin films, demonstrating the fabrication of DBR with a single sputtering target. By incrementally adding a high-n/low-n pair, the evolution of optical properties of the DBR was studied with respect to its structural transformation.","PeriodicalId":404810,"journal":{"name":"Low-Dimensional Materials and Devices 2018","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133264724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phys-Chem nm-scale characterization of 2D materials: technique is there-use it! (Conference Presentation) 二维材料的物理-化学纳米级表征:技术在那里-使用它!(会议)
Low-Dimensional Materials and Devices 2018 Pub Date : 2018-09-17 DOI: 10.1117/12.2323105
A. Krayev
{"title":"Phys-Chem nm-scale characterization of 2D materials: technique is there-use it! (Conference Presentation)","authors":"A. Krayev","doi":"10.1117/12.2323105","DOIUrl":"https://doi.org/10.1117/12.2323105","url":null,"abstract":"","PeriodicalId":404810,"journal":{"name":"Low-Dimensional Materials and Devices 2018","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131918037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron mobility in GaN-based core-shell nanowires (Conference Presentation) 氮化镓基核壳纳米线的电子迁移率(会议报告)
Low-Dimensional Materials and Devices 2018 Pub Date : 2018-09-17 DOI: 10.1117/12.2320150
Y. Qu
{"title":"Electron mobility in GaN-based core-shell nanowires (Conference Presentation)","authors":"Y. Qu","doi":"10.1117/12.2320150","DOIUrl":"https://doi.org/10.1117/12.2320150","url":null,"abstract":"","PeriodicalId":404810,"journal":{"name":"Low-Dimensional Materials and Devices 2018","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123963183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of chemical treatment on structural defects and optical properties of two-dimensional semiconductors (Conference Presentation) 化学处理对二维半导体结构缺陷和光学性能的影响(会议报告)
Low-Dimensional Materials and Devices 2018 Pub Date : 2018-09-17 DOI: 10.1117/12.2320484
Shrawan Roy, Wooseon Choi, Sera Jeon, Do-Hwan Kim, H. Kim, S. Yun, Yongjun Lee, Jaekwang Lee, Young. M. Kim, Jeongyong Kim
{"title":"Effect of chemical treatment on structural defects and optical properties of two-dimensional semiconductors (Conference Presentation)","authors":"Shrawan Roy, Wooseon Choi, Sera Jeon, Do-Hwan Kim, H. Kim, S. Yun, Yongjun Lee, Jaekwang Lee, Young. M. Kim, Jeongyong Kim","doi":"10.1117/12.2320484","DOIUrl":"https://doi.org/10.1117/12.2320484","url":null,"abstract":"","PeriodicalId":404810,"journal":{"name":"Low-Dimensional Materials and Devices 2018","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121579621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信