Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays最新文献

Investigation of hydrogen evolution and dangling bonds creation mechanism in amorphous silicon nitride thin films 非晶氮化硅薄膜中析氢及悬空键形成机制的研究

Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays Pub Date : 1995-09-25 DOI: 10.1109/AMLCD.1995.540975

T. Li, J. Kanicki, M. Fitzner, W. L. Warren

{"title":"Investigation of hydrogen evolution and dangling bonds creation mechanism in amorphous silicon nitride thin films","authors":"T. Li, J. Kanicki, M. Fitzner, W. L. Warren","doi":"10.1109/AMLCD.1995.540975","DOIUrl":"https://doi.org/10.1109/AMLCD.1995.540975","url":null,"abstract":"We have investigated the hydrogen evolution and its consequent impact on the silicon and nitrogen dangling bond density in Si- and N-rich amorphous hydrogenated silicon nitride films prepared by plasma-enhanced chemical vapor deposition. This investigation was done under different thermal annealing conditions through a combination of the Fourier transform infrared spectroscopy and electron spin resonance (ESR) measurements. We have found that the rate of hydrogen evolution from each bond depends on the film stoichiometry, and the N-H bonds are thermally less or more stable than the Si:H bonds in Si- and N-rich films, respectively. In N-rich silicon nitride, for example, the dissociation temperature of the Si-H bond is about 500 and 700/spl deg/C for the films deposited at 250 and 400/spl deg/C, respectively; and almost all of the N-H bonds are dissociated above 1000/spl deg/C. The IR and ESR results suggest that the thermal annealing of the N-rich films creates both K- and N-centers. But the K-center would be passivate during the thermal annealing to form new Si-N bonds, which are observed in the IR spectra.","PeriodicalId":397485,"journal":{"name":"Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128260069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Electrical performance of top-gate amorphous silicon thin-film transistors 顶栅非晶硅薄膜晶体管的电性能

Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays Pub Date : 1995-09-25 DOI: 10.1109/AMLCD.1995.540955

C. Chiang, J. Kanicki, F. Libsch

{"title":"Electrical performance of top-gate amorphous silicon thin-film transistors","authors":"C. Chiang, J. Kanicki, F. Libsch","doi":"10.1109/AMLCD.1995.540955","DOIUrl":"https://doi.org/10.1109/AMLCD.1995.540955","url":null,"abstract":"In this paper, we have studied the electrical performance of a top-gate staggered hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT). This type of TFT has an I/sub ON//I/sub OFF/ ratio of about 10/sup 6/ for the drain-source voltage Vds=10 V. Its threshold voltage V/sub T/ is about 2V. Using the current-voltage characteristics of TFTs with different channel lengths, we extract the intrinsic field-effect mobility of about 0.23 cm/sup //Vsec. We also find that the specific contact resistance of this top-gate TFT is about 17 /spl Omega/-cm/sup 2/, which is still too high for the applications in the TFT liquid crystal display (TFT-LCD). Channel conduction activation energy, which is deduced from the TFT I-V characteristics at different temperature, is about 0.18 eV when the transistor is in ON-state. For the bottom-gate TFT, the ON-state activation energy is about 0.12 eV. The estimated interface state density, obtained by field-effect (FE) method, is about 10/sup 12/ cm/sup -2/ eV/sup -1/, which is about one order of magnitude higher than that obtained for the bottom-gate TFT. We have found that bias-temperature-stress (BTS) induced shift in threshold voltage (/spl Delta/V/sub T/) follows closely the stretched-exponential stress time dependence. A stretched-exponential exponent /spl beta/ extracted at 80/spl deg/C for the top-gate TFT is slightly larger than the one for the bottom-gate TFT. The subthreshold behavior of the top-gate TFT is observed to degrade significantly under large positive bias stress condition, which indicates the trapping of negative charges or/and creation of negative defect states.","PeriodicalId":397485,"journal":{"name":"Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays","volume":"2013 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114451362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

A new CCFL inverter circuit far AMLCD panels results in significantly higher efficiency and brightness 在AMLCD面板上，一种新的CCFL逆变电路显著提高了效率和亮度

Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays Pub Date : 1995-09-25 DOI: 10.1109/AMLCD.1995.540976

M. Nalbant

引用次数: 7

ARPA display program and the National Flat Panel Display Initiative ARPA显示计划和国家平板显示计划

Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays Pub Date : 1995-09-25 DOI: 10.1109/AMLCD.1995.540949

M. Hartney

引用次数: 2

Thin film transistors fabricated at low temperatures in single crystal silicon films on glass substrates 低温下在玻璃基板上的单晶硅薄膜中制造的薄膜晶体管

Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays Pub Date : 1995-09-25 DOI: 10.1109/AMLCD.1995.540974

D. Kouvatsos, G. Sarcona, D. Tsoukalas, M. K. Hatalis, D. Goustouridis, J. Stoemenos

引用次数: 7

Wide viewing angle of twist nematic liquid crystal in polymer networks 聚合物网络中扭向列相液晶的宽视角

Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays Pub Date : 1995-09-25 DOI: 10.1109/AMLCD.1995.540977

Jianxin Guo, Qingbing Wuang, Zhenjun Ma, Tao Yu, Xibin Shao, X. Huang

引用次数: 0

Electrophotographic patterning of a-Si:H a-Si:H的电子照相图样

Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays Pub Date : 1995-09-25 DOI: 10.1109/AMLCD.1995.540950

N. Gleskova, S. Wagner, D. Shen

引用次数: 1

High performance AM-LCD designs for military/severe environments 高性能AM-LCD设计，适用于军事/恶劣环境

Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays Pub Date : 1995-09-25 DOI: 10.1109/AMLCD.1995.540973

J. Farrell, J. C. Wright

引用次数: 0

An alternative transparent conducting oxide to ITO for the a-Si:H TFT-LCD applications 用于a-Si:H TFT-LCD应用的ITO透明导电氧化物替代品

Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays Pub Date : 1995-09-25 DOI: 10.1109/AMLCD.1995.540959

J. Lan, J. Kanicki, A. Catalano, J. Keane

引用次数: 7

Modeling of leakage current distributions in series connected polysilicon thin film transistors 串联多晶硅薄膜晶体管泄漏电流分布的建模

Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays Pub Date : 1995-09-25 DOI: 10.1109/AMLCD.1995.540969

E. Cheng, J. Sturm, I. Wu, T. King

引用次数: 32