2012 28th International Conference on Microelectronics Proceedings最新文献

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A unified approach in manipulation with modular arithmetic 一种统一的模运算方法
2012 28th International Conference on Microelectronics Proceedings Pub Date : 2012-05-13 DOI: 10.1109/MIEL.2012.6222892
M. Stojcev, E. Milovanovic, I. Milovanovic
{"title":"A unified approach in manipulation with modular arithmetic","authors":"M. Stojcev, E. Milovanovic, I. Milovanovic","doi":"10.1109/MIEL.2012.6222892","DOIUrl":"https://doi.org/10.1109/MIEL.2012.6222892","url":null,"abstract":"Modular arithmetic lets us carry out algebraic calculations on integers with a systematic disregard for terms divisible by a certain number (called the modulus). This kind of reduced algebra is essential background for the mathematics of computer science, coding theory, primality testing, and much more. In this paper we propose a unique approach for calculating “mod” operation, regardless of the signs of operands by which all ambiguities present in high level languages, such as C, Java, C++, Mathematica, Matlab, are overcome. Modular arithmetic is quite a useful tool in number theory. In particular, it can be used to obtain information about the solutions (or lack thereof) of a specific equation. In order to reduce the number of iteration steps during the calculation of g.c.d. and solving linear diophantine equations in two variables, based on Euclidian and extended Euclidian algorithm, we propose the usage of mod and mod operations.","PeriodicalId":396356,"journal":{"name":"2012 28th International Conference on Microelectronics Proceedings","volume":"9 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120910439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Photoacoustic elastic bending method: Study of the silicon membranes 光声弹性弯曲法:硅膜的研究
2012 28th International Conference on Microelectronics Proceedings Pub Date : 2012-05-13 DOI: 10.1109/MIEL.2012.6222825
D. Todorović, D. Markushev, M. Rabasović, K. Radulović, V. Jović
{"title":"Photoacoustic elastic bending method: Study of the silicon membranes","authors":"D. Todorović, D. Markushev, M. Rabasović, K. Radulović, V. Jović","doi":"10.1109/MIEL.2012.6222825","DOIUrl":"https://doi.org/10.1109/MIEL.2012.6222825","url":null,"abstract":"Photoacoustic (PA) amplitude and phase spectra vs the modulation frequency of the excitation optical beam were measured and analyzed by PA elastic bending method. The PA spectra were measured in a frequency range (from 20 to 20000 Hz), for different thicknesses of Si rectangular membranes (from 10 to 100 μm).. The elastic characteristics of the Si chip with square membranes were described by the theory of thin elastic plate, i.e. as an elastic simply supported rectangular plate. The PA signals (sum of the thermodiffusion, thermoelastic and electronic deformation components) were calculated and compared with the experimental ones. These results showed that the PA elastic bending spectra are convenient for investigation the characteristics of micromechanical membraines. The PA elastic bending spectra of the optically driven micro-opto-electro-mechanical systems (MOEMS) enable, for example, to investigate the different electronic and thermal transport characteristics or technological processes in MEMS fabrications, etc.","PeriodicalId":396356,"journal":{"name":"2012 28th International Conference on Microelectronics Proceedings","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125111423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Device characteristics research according to the array EEPROM cell's active pattern difference 根据阵列EEPROM单元的有源模式差异进行器件特性研究
2012 28th International Conference on Microelectronics Proceedings Pub Date : 2012-05-13 DOI: 10.1109/MIEL.2012.6222805
Young-sik Choi, Y. Roh, Sang-bae Yi, Sun-hyun Kim, Sung-hoon You
{"title":"Device characteristics research according to the array EEPROM cell's active pattern difference","authors":"Young-sik Choi, Y. Roh, Sang-bae Yi, Sun-hyun Kim, Sung-hoon You","doi":"10.1109/MIEL.2012.6222805","DOIUrl":"https://doi.org/10.1109/MIEL.2012.6222805","url":null,"abstract":"In the product development of our company's Deep Sub Micron Display Driver IC(DDI), we found that inner cell's and outer cell's characteristic are significantly different. This problem leads to device yield drop and reliability problem, so we must check the reason why the characteristics changes of inner cell and outer cell were so serious in the array EEPROM cell. First of all, we check the gate oxide area in EEPROM cell on the supposition that inner cell's and outer cell's gate oxide thickness are different. After we checked it, we found that the most effective reason of the characteristics changes was Gate Oxide Thickness changes had a decisive effect on the EEPROM Cell' changes according to the degree of STI profile(Top Corner Rounding). And the difference of STI profile is cause of active pattern difference. In this paper, we suggested the profile improvement method by STI process and characteristics improvement by insulting Dummy cell.","PeriodicalId":396356,"journal":{"name":"2012 28th International Conference on Microelectronics Proceedings","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129628595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-frequency multi-bias small-signal neural modeling for FinFET 高频多偏置FinFET小信号神经网络建模
2012 28th International Conference on Microelectronics Proceedings Pub Date : 2012-05-13 DOI: 10.1109/MIEL.2012.6222850
Z. Marinković, G. Crupi, D. Schreurs, A. Caddemi, V. Markovic
{"title":"High-frequency multi-bias small-signal neural modeling for FinFET","authors":"Z. Marinković, G. Crupi, D. Schreurs, A. Caddemi, V. Markovic","doi":"10.1109/MIEL.2012.6222850","DOIUrl":"https://doi.org/10.1109/MIEL.2012.6222850","url":null,"abstract":"In this paper we extract and validate a small-signal neural model for FinFETs. Namely, artificial neural networks are used for modeling the dependence of the small-signal admittance parameters for a FinFET on bias voltages and frequency. The model is developed for the actual transistor, which is obtained after de-embedding the effects of the probe pads, transmission lines, and substrate. The extracted model is validated in a wide range of operating bias conditions up to 50 GHz.","PeriodicalId":396356,"journal":{"name":"2012 28th International Conference on Microelectronics Proceedings","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123909792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Phonon and lattice dynamics in tri-gate FinFETs on (100) and (110) Si substrates (100)和(110)Si衬底上三栅极finfet的声子和晶格动力学
2012 28th International Conference on Microelectronics Proceedings Pub Date : 2012-05-13 DOI: 10.1109/MIEL.2012.6222849
C. Mukherjee, C. K. Maiti
{"title":"Phonon and lattice dynamics in tri-gate FinFETs on (100) and (110) Si substrates","authors":"C. Mukherjee, C. K. Maiti","doi":"10.1109/MIEL.2012.6222849","DOIUrl":"https://doi.org/10.1109/MIEL.2012.6222849","url":null,"abstract":"Phonon spectra and lattice dynamics of silicon and other molecular species are studied in detail using inelastic tunneling spectroscopy (IETS) of p-type Al/SiO2/Si tri-gate FinFETs. Phonon and vibration modes are compared for FinFETs on (100) and (110) silicon substrates. The shift in phonon frequencies depending on the direction of current flow, i.e. substrate orientation, has been demonstrated. Major phonons of Si and SiO2 are identified from the IETS spectra of the tri-gate FinFETs.","PeriodicalId":396356,"journal":{"name":"2012 28th International Conference on Microelectronics Proceedings","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130102713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design and simulation of a DC/DC converter with dynamic thermal motor control for racing application 带有动态热电机控制的赛车用DC/DC变换器的设计与仿真
2012 28th International Conference on Microelectronics Proceedings Pub Date : 2012-05-13 DOI: 10.1109/MIEL.2012.6222808
D. Cavaiuolo, M. Gargiulo, A. Irace
{"title":"Design and simulation of a DC/DC converter with dynamic thermal motor control for racing application","authors":"D. Cavaiuolo, M. Gargiulo, A. Irace","doi":"10.1109/MIEL.2012.6222808","DOIUrl":"https://doi.org/10.1109/MIEL.2012.6222808","url":null,"abstract":"In this paper, a DC/DC power converter devoted to electrical motor drive in motorbike racing application is designed and simulated in MATLAB Simulink environment, along with its control logic strategy. In particular, we conceived, developed and simulated a thermal control strategy, to be implemented as the logic core of the power converter, which dynamically and automatically fits the electric power fed to motor, depending on its actual temperature. As a result, motor burnout during the race is avoided, improving the power train reliability without affecting the racing performance. Simulation results, in which the whole power train system was modeled in Simulink, confirmed the proposed algorithm effectiveness.","PeriodicalId":396356,"journal":{"name":"2012 28th International Conference on Microelectronics Proceedings","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134475035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Rear view camera system for car driving assistance 汽车辅助驾驶后视摄像系统
2012 28th International Conference on Microelectronics Proceedings Pub Date : 2012-05-13 DOI: 10.1109/MIEL.2012.6222882
Zoran Stamenkovic, Klaus Tittelbach-Helmrich, J. Domke, C. Lorchner-Gerdaus, J. Anders, V. Sark, M. Eric, N. Sira
{"title":"Rear view camera system for car driving assistance","authors":"Zoran Stamenkovic, Klaus Tittelbach-Helmrich, J. Domke, C. Lorchner-Gerdaus, J. Anders, V. Sark, M. Eric, N. Sira","doi":"10.1109/MIEL.2012.6222882","DOIUrl":"https://doi.org/10.1109/MIEL.2012.6222882","url":null,"abstract":"The paper presents a system-on-chip (SOC) aimed to provide the fast video stream processing and wireless transfer for automotive applications, e.g. from a truck's trailer to the driver cabin. This SOC is based on the ARC processor and a custom very-low-latency video codec. It is verified and implemented in FPGA on a custom printed-circuit-board. The very first test results are presented too.","PeriodicalId":396356,"journal":{"name":"2012 28th International Conference on Microelectronics Proceedings","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123558823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Trap properties of asymmetrical double-gate polysilicon thin-film transistors with low frequency noise in terms of the grain boundaries direction 低频噪声非对称双栅多晶硅薄膜晶体管在晶界方向上的阱特性
2012 28th International Conference on Microelectronics Proceedings Pub Date : 2012-05-13 DOI: 10.1109/MIEL.2012.6222869
N. Hastas, A. Tsormpatzoglou, I. Pappas, D. Kouvatsos, D. Moschou, A. Voutsas, C. Dimitriadis
{"title":"Trap properties of asymmetrical double-gate polysilicon thin-film transistors with low frequency noise in terms of the grain boundaries direction","authors":"N. Hastas, A. Tsormpatzoglou, I. Pappas, D. Kouvatsos, D. Moschou, A. Voutsas, C. Dimitriadis","doi":"10.1109/MIEL.2012.6222869","DOIUrl":"https://doi.org/10.1109/MIEL.2012.6222869","url":null,"abstract":"Low frequency drain current fluctuation noise was measured in two types of polysilicon double gate thin film transistors fabricated by sequential lateral solidification technique keeping the back gate grounded. In X-oriented devices, the grain boundaries are parallel to the drain current flow, while in Y-oriented devices the grain boundaries are lying perpendicular to the drain current flow. The noise spectra consist of generation-recombination (g-r) and flicker noise components. In X-oriented TFTs the g-r centers are related to bulk traps located in the grains, whereas in Y-oriented TFTs the g-r centers correspond to grain boundary traps in addition to bulk traps in the grains.","PeriodicalId":396356,"journal":{"name":"2012 28th International Conference on Microelectronics Proceedings","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125706077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analytical analysis of a p-n junction with arbitrary shaped doping profile 具有任意形状掺杂谱线的pn结的解析分析
2012 28th International Conference on Microelectronics Proceedings Pub Date : 2012-05-13 DOI: 10.1109/MIEL.2012.6222799
V. Milovanovic, H. Zimmermann
{"title":"Analytical analysis of a p-n junction with arbitrary shaped doping profile","authors":"V. Milovanovic, H. Zimmermann","doi":"10.1109/MIEL.2012.6222799","DOIUrl":"https://doi.org/10.1109/MIEL.2012.6222799","url":null,"abstract":"Analysis of a p-n junction with arbitrary value of the grading coefficient is conduced. Presented solution is linking the grading coefficient of widely used diode's depletion layer capacitance equation with analytically defined impurity doping profile. Derivations are verified against numerical simulations based on the finite element method which experimentally prove the correctness. Also, analytical expressions for other physical quantities of a diode, like electric field, charge, potential, space charge region width, follow straightforwardly.","PeriodicalId":396356,"journal":{"name":"2012 28th International Conference on Microelectronics Proceedings","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127380281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Characterization of adsorption-desorption processes on semiconductor surfaces using nanocantilever mass sensors 利用纳米反杠杆质量传感器表征半导体表面的吸附-解吸过程
2012 28th International Conference on Microelectronics Proceedings Pub Date : 2012-05-13 DOI: 10.1109/MIEL.2012.6222823
Z. Djuric, K. Radulović, I. Jokić, M. Frantlović
{"title":"Characterization of adsorption-desorption processes on semiconductor surfaces using nanocantilever mass sensors","authors":"Z. Djuric, K. Radulović, I. Jokić, M. Frantlović","doi":"10.1109/MIEL.2012.6222823","DOIUrl":"https://doi.org/10.1109/MIEL.2012.6222823","url":null,"abstract":"Characterization of adsorption-desorption (AD) processes of gas particles on semiconductors is necessary in order to investigate the influence of these processes on the micro/nano-devices performance. By applying a numerical computational method we determined the pressure dependence of the equilibrium coverage of the semiconductor surface by chemisorbed gas particles. We concluded that the pressure dependence of the total coverage of the surface by adparticles, and also of coverages by both the neutral and ionized adparticles, can be obtained by measuring the adsorbed mass. We propose the use of nanocantilever sensors for such extremely sensitive mass measurements. The obtained adsorption induced cantilever's resonant frequency shifts are higher than the detection threshold set by the termomechanical noise. This confirms the applicability of the used nanocantilever sensor for experimental characterization of AD processes at semiconductor surfaces.","PeriodicalId":396356,"journal":{"name":"2012 28th International Conference on Microelectronics Proceedings","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129993999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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