{"title":"Reactive Ion Etching","authors":"G. Sirineni, H. Naseem, W. Brown, A. Malshe","doi":"10.1002/9783527824199.ch7","DOIUrl":"https://doi.org/10.1002/9783527824199.ch7","url":null,"abstract":"We are interested in understanding the plasma etching mechanism, which includes plasma phase chemistry, plasma-surface reactions, and surface reactions. We specialize in studying etch processes of non-conventional thinfilm materials such as copper, indium tin oxide, metal oxides, a-Si:H, SiNx, and SiGex, for future generations of VLSI, TFT, and other microelectronics or opto-electronics. High temperature RIE is a powerful method that has the advantages of a simple reactor design and being easy to transfer to accommodate large substrates (e.g. 12\" for VLSI and 1m x 1m for TFT LCDs). Some examples of recent results are shown as follows. For more detailed information, please see the Publications List.","PeriodicalId":384499,"journal":{"name":"Atomic Layer Processing","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133567008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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