Reactive Ion Etching

Abstract

We are interested in understanding the plasma etching mechanism, which includes plasma phase chemistry, plasma-surface reactions, and surface reactions. We specialize in studying etch processes of non-conventional thinfilm materials such as copper, indium tin oxide, metal oxides, a-Si:H, SiNx, and SiGex, for future generations of VLSI, TFT, and other microelectronics or opto-electronics. High temperature RIE is a powerful method that has the advantages of a simple reactor design and being easy to transfer to accommodate large substrates (e.g. 12" for VLSI and 1m x 1m for TFT LCDs). Some examples of recent results are shown as follows. For more detailed information, please see the Publications List.