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Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V最新文献

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Polysilicon gate depletion effect on deep-submicron circuit performance 多晶硅栅极损耗对深亚微米电路性能的影响
Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V Pub Date : 1994-06-05 DOI: 10.1109/NUPAD.1994.343461
W.W. Lin, C. Liang
{"title":"Polysilicon gate depletion effect on deep-submicron circuit performance","authors":"W.W. Lin, C. Liang","doi":"10.1109/NUPAD.1994.343461","DOIUrl":"https://doi.org/10.1109/NUPAD.1994.343461","url":null,"abstract":"By integrating the efforts in process, device and circuit simulations, this paper investigates the polysilicon-gate depletion effect (PDE) on performance of circuits composed of deep-submicron transistors. The DC and AC components of PDE on circuit performance are separated for the first time. The study delineates quantitatively the competing effect between the DC and AC PDE. Results of this study suggest the following: (i) PDE degrades circuit speed through dominance of the DC component in the competing effect. Reduction of gate oxide thickness lessens this DC PDE dominance behavior. (ii) Circuit speed degradation due to PDE becomes more significant during low-power operation. (iii) The above phenomenon in (ii) can be substantially improved by thinning the gate oxide thickness.<<ETX>>","PeriodicalId":381900,"journal":{"name":"Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124374903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Monte Carlo modeling of infrared multiple-quantum-well phototransistor 红外多量子阱光电晶体管的蒙特卡罗建模
Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V Pub Date : 1994-06-05 DOI: 10.1109/NUPAD.1994.343489
V. Ryzhii, M. Ershov
{"title":"Monte Carlo modeling of infrared multiple-quantum-well phototransistor","authors":"V. Ryzhii, M. Ershov","doi":"10.1109/NUPAD.1994.343489","DOIUrl":"https://doi.org/10.1109/NUPAD.1994.343489","url":null,"abstract":"Infrared multiple-quantum-well (MQW) phototransistor is proposed and considered theoretically. The MQW phototransistor utilizes intersubband optical absorption and exhibits giant photocurrent gain which is due to the thermionic injection of hot electrons across the emitter barrier and fast electron transit through the MQW base. We use Monte Carlo simulation to study the hot electron transport effect on performance of MQW phototransistor for different base widths and electron injection energies. Transition from near ballistic hot electron transport to diffusive transport decreases the responsivity but its value can be significant in this case as well.<<ETX>>","PeriodicalId":381900,"journal":{"name":"Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125074049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical modelling of non-ideal current-voltage characteristics of high-efficiency silicon solar cells 高效硅太阳能电池非理想电流电压特性的数值模拟
Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V Pub Date : 1994-06-05 DOI: 10.1109/NUPAD.1994.343463
G. Heiser, A. Aberle
{"title":"Numerical modelling of non-ideal current-voltage characteristics of high-efficiency silicon solar cells","authors":"G. Heiser, A. Aberle","doi":"10.1109/NUPAD.1994.343463","DOIUrl":"https://doi.org/10.1109/NUPAD.1994.343463","url":null,"abstract":"Under one-sun illumination, the highest energy conversion efficiencies of silicon solar cells are presently obtained with bifacially contacted n/sup +/p cells, where contact to the p-type substrate is made via small openings in the rear passivating oxide. Experimentally, it has been found that the dark and illuminated current-voltage (I-V) characteristics of these devices deviate strongly from ideal diode theory. In this work the experimental I-V curves are compared with results obtained from 2- and 3-dimensional (2D, 3D) device simulation based on experimental cell parameters. Excellent agreement between theory and experiment is obtained. The paper shows why these solar cells cannot accurately be modelled by 1D simulators and reveals the physical reasons underlying the observed non-idealities.<<ETX>>","PeriodicalId":381900,"journal":{"name":"Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129093046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Influence of heat flux on the accuracy of hydrodynamic models for ultra-short Si MOSFETs 热流密度对超短硅mosfet流体动力学模型精度的影响
Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V Pub Date : 1994-06-05 DOI: 10.1109/NUPAD.1994.343490
I. Bork, C. Jungemann, B. Meinerzhagen, W. Engl
{"title":"Influence of heat flux on the accuracy of hydrodynamic models for ultra-short Si MOSFETs","authors":"I. Bork, C. Jungemann, B. Meinerzhagen, W. Engl","doi":"10.1109/NUPAD.1994.343490","DOIUrl":"https://doi.org/10.1109/NUPAD.1994.343490","url":null,"abstract":"The modeling accuracy of the generalized hydrodynamic model for ultra-short MOSFETs with L/sub eff/=0.1 /spl mu/m is examined using a consistent Monte Carlo model as reference. It is shown that with a proper modeling of heat flux the generalized hydrodynamic model is still sufficiently accurate even for such small devices.<<ETX>>","PeriodicalId":381900,"journal":{"name":"Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117236198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Non-ideal contacts-Schottky diode soft-breakdown and hybrid diode with contact over pn-junction 非理想触点-肖特基二极管软击穿和pn结触点混合二极管
Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V Pub Date : 1994-06-05 DOI: 10.1109/NUPAD.1994.343487
D. Schroeder, T. Ostermann, O. Kalz
{"title":"Non-ideal contacts-Schottky diode soft-breakdown and hybrid diode with contact over pn-junction","authors":"D. Schroeder, T. Ostermann, O. Kalz","doi":"10.1109/NUPAD.1994.343487","DOIUrl":"https://doi.org/10.1109/NUPAD.1994.343487","url":null,"abstract":"We applied our model of non-ideal metal-semiconductor contacts to contacts on material of various low and high dopings and on pn-junctions. Respective simulation results are presented in the paper. First, the apparent barrier lowering, which is due to tunneling, is shown as a function of doping and contact voltage drop. The soft breakdown of a Schottky diode under reverse bias is simulated. Finally we investigate how the potential in a hybrid diode is affected where the pn-junction is covered by a metal contact.<<ETX>>","PeriodicalId":381900,"journal":{"name":"Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114062542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Non-Fickian microscopic diffusion at interfaces and in thin films 界面和薄膜中的非菲克微观扩散
Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V Pub Date : 1994-06-05 DOI: 10.1109/NUPAD.1994.343480
M. Orlowski
{"title":"Non-Fickian microscopic diffusion at interfaces and in thin films","authors":"M. Orlowski","doi":"10.1109/NUPAD.1994.343480","DOIUrl":"https://doi.org/10.1109/NUPAD.1994.343480","url":null,"abstract":"This paper investigates the consequences of a random walk diffusion based on the multidimensional tensorial extension of the adjacency matrix concept on the dopant distribution at the interfaces and in thin films. The random walk concept used here provides a rigorous method of counting all possible random walk paths in an arbitrary 2D and 3D domain and avoids the conceptual inconsistencies of the conventional random walk's treatment of the so called reflective barrier. The new approach leads to a new phenomenon of a depleted sub-barrier region characterized by a non-zero asymptotic relative gradient at the barrier instead of the vanishing gradient predicted by the conventional treatment. The depleted region extends over only several diffusional jump distances. In restricted diffusion domains in 2D and 3D geometries the depletion at the interface or in the corners is much stronger than in the one-dimensional case. The effects in 2D geometries are illustrated specifically on isolation structures in SOI films.<<ETX>>","PeriodicalId":381900,"journal":{"name":"Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V","volume":"281 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121697098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phenomenological modeling of plasma generation for real-time control of RIE systems 用于RIE系统实时控制的等离子体生成的现象学建模
Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V Pub Date : 1994-06-05 DOI: 10.1109/NUPAD.1994.343497
M. Chandhok, M. Giles, P.D. Hanish, J. Grizzle
{"title":"Phenomenological modeling of plasma generation for real-time control of RIE systems","authors":"M. Chandhok, M. Giles, P.D. Hanish, J. Grizzle","doi":"10.1109/NUPAD.1994.343497","DOIUrl":"https://doi.org/10.1109/NUPAD.1994.343497","url":null,"abstract":"A phenomenological approach to modeling plasma parameters in a reactive ion etching system is described, combining a simplified continuum model of electrons and ions with a continuously stirred tank reactor model of plasma chemistry. The model relates equipment parameters such as power and pressure to parameters central to equipment control such as reactive radical concentration. The simplified models allow transient response characteristics of the equipment to be calculated in reasonable time.<<ETX>>","PeriodicalId":381900,"journal":{"name":"Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132723184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A new approach for 2-D mesh generation for complex device structures 一种复杂器件结构二维网格生成的新方法
Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V Pub Date : 1994-06-05 DOI: 10.1109/NUPAD.1994.343467
G. Garretón, L. Villablanca, N. Strecker, W. Fichtner
{"title":"A new approach for 2-D mesh generation for complex device structures","authors":"G. Garretón, L. Villablanca, N. Strecker, W. Fichtner","doi":"10.1109/NUPAD.1994.343467","DOIUrl":"https://doi.org/10.1109/NUPAD.1994.343467","url":null,"abstract":"Mesh generation has become one of the most important steps in technology CAD (TCAD). The ever increasing complexity of modern semiconductor devices together with certain restrictions on the grid parameters (non-obtuse angles, desirable aspect ratios, etc.) put stringent requirements on the performance of mesh generators. This paper formulates new aspects to consider in the mesh generation process.<<ETX>>","PeriodicalId":381900,"journal":{"name":"Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134225751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Analysis of amorphous-silicon devices 非晶硅器件的分析
Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V Pub Date : 1994-06-05 DOI: 10.1109/NUPAD.1994.343500
M. Valdinoci, A. Gnudi, M. Rudan, G. Fortunato
{"title":"Analysis of amorphous-silicon devices","authors":"M. Valdinoci, A. Gnudi, M. Rudan, G. Fortunato","doi":"10.1109/NUPAD.1994.343500","DOIUrl":"https://doi.org/10.1109/NUPAD.1994.343500","url":null,"abstract":"In recent years, Amorphous-Silicon devices have found interesting applications in large-area devices, such as the driving circuitry for flat-panel displays, scanner and print arrays, or chemical sensors. For this reason, many investigations have been carried out for the purpose of improving their performance, especially as far as stability and speed are concerned. To describe their electrical characteristics, analytical models or ad hoc numerical analyses have been proposed elsewhere. In this paper, the implementation of the model for amorphous silicon within the general-purpose simulator HFIELDS is shown, along with an application to a realistic case.<<ETX>>","PeriodicalId":381900,"journal":{"name":"Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116585799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A triangular mesh generation method suitable for the analysis of complex MOS device structures 一种适用于复杂MOS器件结构分析的三角网格生成方法
Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V Pub Date : 1994-06-05 DOI: 10.1109/NUPAD.1994.343465
S. Kumashiro, I. Yokota
{"title":"A triangular mesh generation method suitable for the analysis of complex MOS device structures","authors":"S. Kumashiro, I. Yokota","doi":"10.1109/NUPAD.1994.343465","DOIUrl":"https://doi.org/10.1109/NUPAD.1994.343465","url":null,"abstract":"A fully automatic triangular mesh generation method which can correctly handle the MOS inversion current along any arbitrary shaped channel is proposed. The key idea of this method is to introduce an interface protection layer which consists of rectangular mesh locally conformed to the material interface. The performance of this method is verified through an oblique and a SLIT transistors simulation.<<ETX>>","PeriodicalId":381900,"journal":{"name":"Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125003604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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