2019 IEEE International Symposium on Applications of Ferroelectrics (ISAF)最新文献

{"title":"Non-uniform polarization profiles in P(VDF-TrFE) copolymer films after cyclical poling","authors":"Q. Nguyen, T. R. Venkatesan, W. Wirges, R. Gerhard","doi":"10.1109/ISAF43169.2019.9034937","DOIUrl":"https://doi.org/10.1109/ISAF43169.2019.9034937","url":null,"abstract":"Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymers, probably the most often used electro-active polymers, are rendered ferro-, pyro-, and piezoelectric via poling under high electric fields. Uniform polarization profiles across the sample thickness are advantageous or even necessary for most device applications. Here, we attempted to obtain spatially uniform polarization profiles in commercial P(VDF-TrFE) copolymer films with 50/50, 72/28 and 75/25 mol% of VDF/TrFE by means of cyclical hysteresis poling. The polarization profiles were mapped with Piezoelectrically generated Pressure Steps (PPSs), and the resulting depth profiles were correlated with the corresponding hysteresis curves. In addition, Fourier-Transform Infrared (FTIR) spectroscopy was used to identify the β-phase fractions in the P(VDF-TrFE) compositions. 75/25 mol% copolymer samples show the most uniform polarization profiles and the highest remanent polarization of 70 mC/m2 (as seen from the hysteresis curves) - corresponding to the highest β-phase fraction in comparison (as observed in FTIR measurements).","PeriodicalId":367465,"journal":{"name":"2019 IEEE International Symposium on Applications of Ferroelectrics (ISAF)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121141399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Vibrating Piezoelectric Energy Conversion Efficiency of Sol-Gel PZT Films with Various Crystal Orientations on MEMS Buckled Diaphragm Structures","authors":"K. Yamashita, Shōta Nakajima, Jo Shiomi, M. Noda, P. Muralt","doi":"10.1109/ISAF43169.2019.9034932","DOIUrl":"https://doi.org/10.1109/ISAF43169.2019.9034932","url":null,"abstract":"Vibrating energy conversion efficiency was investigated on piezoelectric transducers fabricated on MEMS buckled diaphragm structures from the viewpoint of crystal orientation of sol-gel derived lead-zirconate-titanate (PZT) films. The crystal orientation dominates in-plane stress and spontaneous polarization direction of the PZT films. The in-plane stress affects the static buckling of the diaphragm where a large convex buckling results in a high mechanical conversion efficiency from the flexural vibration to the in-plain vibration. The polarization direction affects the intrinsic piezoelectric conversion efficiency. The crystal orientation of the sol-gel PZT was controlled through pyrolysis temperature between 250°C and 350°C, resulting in a texture variation from (100)-oriented films to (111)-oriented ones. Highly (111)-oriented films showed large polarizations but small buckling deflections, while highly (100)-oriented films showed vice versa. Intermediately textured films with 40-45% (111)-orientation index showed the highest conversion efficiency.","PeriodicalId":367465,"journal":{"name":"2019 IEEE International Symposium on Applications of Ferroelectrics (ISAF)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133240590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"BiFeO3 synthesis by conventional solid-state reaction","authors":"A. Tuluk, T. Mahon, S. van der Zwaag, P. Groen","doi":"10.1109/ISAF43169.2019.9034976","DOIUrl":"https://doi.org/10.1109/ISAF43169.2019.9034976","url":null,"abstract":"BiFeO3 is a multiferroic material with the perovskite structure which is promising for use in sensors and transducers. Single phase production of BiFeO3 remains a challenge, however. In this study, the optimal calcination temperature to obtain close to single phase powder was determined to be 750°C. The sintering temperature of 775°C was also found to obtain high density ceramics (≈ 95 % of theoretical density). It is shown that off-stoichiometry of bismuth oxide in precursors effects the content of secondary phase. Impedance spectroscopy indicates that the content of secondary phases has a large effect on the electrical conductivity BiFeO3.","PeriodicalId":367465,"journal":{"name":"2019 IEEE International Symposium on Applications of Ferroelectrics (ISAF)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124098942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of dopant spatial distribution on ferroelectric Al-doped HfO2thin films in post-deposition annealing","authors":"Lulu Yao, Xin Liu, Yonghong Cheng","doi":"10.1109/ISAF43169.2019.9034929","DOIUrl":"https://doi.org/10.1109/ISAF43169.2019.9034929","url":null,"abstract":"The ferroelectric property of HfO2 thin films with different Al-dopants spatial distribution is investigated both in post-metallization annealing (PMA) and post-deposition annealing (PDA). The ferroelectric enhancement of the top electrode during rapid thermal annealing (RTA) is only effective in the single-layer Al distributed HfO2 thin films. Without capping electrodes in crystallization anneal, the remanent polarization of the double-layer Al distributed HfO2 thin films is larger, which may be attributed to the thermal diffusion stress generated by the Al-dopants double-layer distribution during annealing","PeriodicalId":367465,"journal":{"name":"2019 IEEE International Symposium on Applications of Ferroelectrics (ISAF)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114334781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Direct observation of local conductive path in degraded multi-layered ceramic capacitor","authors":"K. Izawa, Takao Sada, M. Utsunomiya, S. Inayama, Nobuyoshi Fujikawa, K. Matsubara, K. Yasukawa","doi":"10.1109/ISAF43169.2019.9034950","DOIUrl":"https://doi.org/10.1109/ISAF43169.2019.9034950","url":null,"abstract":"Local conductive paths have been visualized, in the cross section near a degraded area of multi-layered ceramic capacitor (MLCC) just before dielectric breakdown, by scanning spreading resistance microscopy (SSRM). We have revealed that the degraded area is limited within a specific area of a dielectric layer. The insulation resistance (IR) around the cathode was lower than that at the area closer to the anode. We have also done a numerical simulation on conductive path formation with the basis of a physical model. By these observations, we have suggested that the degradation of resistance proceeded from the cathode to the anode side.","PeriodicalId":367465,"journal":{"name":"2019 IEEE International Symposium on Applications of Ferroelectrics (ISAF)","volume":"182 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116419067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lead Zirconate Titanate Thin Films on Silicon-on-Sapphire Substrates","authors":"R. Benoit, Nicholas A. Strnad, Daniel M Potrenka, B. Hanrahan, Steven Isaacson, R. Polcawich","doi":"10.1109/ISAF43169.2019.9034958","DOIUrl":"https://doi.org/10.1109/ISAF43169.2019.9034958","url":null,"abstract":"Pb(Zr52Ti48)O3 (PZT) thin films have been grown by chemical solution deposition on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on typical Si/SiO2 substrates. PZT films deposited on SOS show improvement in PMAX (37.8 vs. 32.1 µC/cm2) and PREM (22.7 vs. 10.9 µC/cm2) over films deposited on Si. A decrease in maximum εr from 1650 (Si) to 1031 (SOS) is also noted. Crystal structure is examined using x-ray diffraction. Ferroelectric polarization hysteresis curves, dielectric constant tuning, and loss tangent are studied using fabricated capacitors. Piezoelectric coefficients calculated from cantilever LDV measurements are also presented.","PeriodicalId":367465,"journal":{"name":"2019 IEEE International Symposium on Applications of Ferroelectrics (ISAF)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126672916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of Transition Metal Ion Doping on Structural and Dielectric Properties of Sol-gel Synthesized Bismuth Ferrite Nanoceramics","authors":"Waseem Ahmad Wani, K. Ramaswamy, B. Venkataraman, Souvik Kundu","doi":"10.1109/ISAF43169.2019.9034952","DOIUrl":"https://doi.org/10.1109/ISAF43169.2019.9034952","url":null,"abstract":"Bismuth layered ferroelectric materials are promising candidates for sensors, actuators and nonvolatile random access memory devices. In addition to these potential candidates, a rhombohedrally distorted perovskite structured bismuth ferrite (BFO) material with space group R3c has also been well recognized owing to the coexistence of ferroelectric and antiferromagnetic properties which are advantageous in high density FeRAM devices. The main recede of the BFO material is low electrical resistivity attributed to the valence fluctuations of Fe ions (Fe3+ to Fe2+) that hampers the magnitude of remnant magnetization at 300K. In order to enhance the physical properties and also to prevent impurity phases during the processing of bismuth ferrite compound, chemical substitution of transition metal ion (Mn) on to Fe site in the crystal lattice of BFO is very essential in order to suit this material especially for memory devices. In the present work, a series of BiMnxFe1-xO3(x = 0, 0.03, 0.05 and 0.10) ceramics were synthesized via low temperature sol-gel route and subsequently the structural, microstructural, optical and dielectric properties were carried out on these samples by using X-ray diffractometer (XRD), scanning electron microscope (SEM), Fourier transform infrared spectrometer (FTIR) and LCR meter respectively. The Bragg peaks in the XRD patterns confirmed the monophasic perovskite BFO structure in all the compositions and merging of (104) and (110) peaks indicate the structural modification which could be attributed to the ionic radii difference of Mn and Fe. The SEM micrographs revealed the existence of nanosized granular shaped grains with negligible porosity and also there is a gradual reduction in the granular size with increase in Mn-doping concentration. The FTIR spectral analysis of these nanoceramic samples showed the strong absorption bands in the wavenumber range of 450-600cm−1 which corroborated the perovskite structure of BFO material. Interestingly, the dielectric constant measured in the frequency range of 20Hz – 1MHz at 300K is higher for Mn doped ceramics than undoped BFO samples. A low frequency dielectric dispersion is evident in the frequency dependence plot of the dielectric constant of these samples.","PeriodicalId":367465,"journal":{"name":"2019 IEEE International Symposium on Applications of Ferroelectrics (ISAF)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134289046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low Sintering Temperature and Electrial Properties on Cu-doped (Bi1/2Na1/2)TiO3-based Solid Solution Ceramics","authors":"Takuya Kujirai, Yuka Takagi, H. Nagata, T. Takenaka","doi":"10.1109/ISAF43169.2019.9034936","DOIUrl":"https://doi.org/10.1109/ISAF43169.2019.9034936","url":null,"abstract":"Doping effects of CuO for sintering behavior and electrical properties were investigated on (Bi<inf>1/2</inf>Na<inf>1/2</inf>)TiO<inf>3</inf> (BNT)-based solid solution system such as 0.90(Bi<inf>1/2</inf>Na<inf>1/2</inf>)TiO<inf>3</inf>-0.06BaTiO<inf>3</inf>-0.04(Bi<inf>1/2</inf>Li<inf>1/2</inf>)TiO<inf>3</inf>(BNLBT4-6) with an MPB composition and relatively high piezoelectric constant. As a result, the relative density of 90% or more was obtained on the CuO-doped sample sintered at 940°C. Additionally, the piezoelectric constant d33 of CuO-doped BNLBT4-6 sintered at 940°C was improved to 164 pC/N as compared with non-doped sample sintered at 1140°C. From these resutls, it was found that the addition of CuO is effective for low sintering temperature and improvement of electrical characteristics.","PeriodicalId":367465,"journal":{"name":"2019 IEEE International Symposium on Applications of Ferroelectrics (ISAF)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121072818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Optimization of the IDT Resonator Parameters by Using Comsol","authors":"I. Kuznetsova, A. Smirnov","doi":"10.1109/ISAF43169.2019.9034977","DOIUrl":"https://doi.org/10.1109/ISAF43169.2019.9034977","url":null,"abstract":"In this paper the results of design and optimization of the interdigital transducer (IDT) parameters by using 2D FEM analysis are presented. An IDT with 5 pairs of aluminum strips placed on Y-cut of a LiNbO3 plate with thickness 370 mkm was considered. The frequency dependencies of the real part of the IDT impedance for different values of aperture calculated by Comsol were obtained. that a reducing in the aperture leads to a more than two times increase in the magnitudes of the resonance responses corresponding to various acoustic modes which could be excited by this IDT. Thus, it can be concluded that the size of the developed devices can be reduced by reducing the aperture of the IDT.","PeriodicalId":367465,"journal":{"name":"2019 IEEE International Symposium on Applications of Ferroelectrics (ISAF)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123999203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural and Optical Analyses of PLZT Thin Films on Gallium-Doped Zinc Oxide Coated Glass Substrate","authors":"Mustafa Cagri Bayir, E. Menşur-Alkoy","doi":"10.1109/ISAF43169.2019.9034954","DOIUrl":"https://doi.org/10.1109/ISAF43169.2019.9034954","url":null,"abstract":"Lead lanthanum zirconate titanate (PLZT) (9/65/35) thin films were prepared on gallium-doped zinc oxide (GZO) coated glass substrates by sol-gel spin coating method for the first time in literature. Processing conditions such as pyrolysis and annealing temperature were selected as parameters to achieve high crystallinity and eliminate rosette phase. Optimum pyrolysis parameters were found as 200°C for 5 minutes and 430°C for 15 minutes to eliminate rosette phase and annealing temperature was selected as 725°C for 1 hour. These processing conditions resulted with 6.4%-matrix phase while regular condition resulted with 19.8%-matrix phase. Optical measurements were done in the range of 350–900 nm. Transmittance level of the films annealed at optimum condition were found as ~60% for 700nm wavelength and band gap levels were calculated as ~3.2 eV.","PeriodicalId":367465,"journal":{"name":"2019 IEEE International Symposium on Applications of Ferroelectrics (ISAF)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126832726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}