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ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics最新文献

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Field enhancement and reduction and elimination of remanent light flow in electrooptic bulk and thin film displays and spatial light modulators. Theory and practice 电光体和薄膜显示器和空间光调制器中的场增强和残余光流的减少和消除。理论与实践
ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1992-08-30 DOI: 10.1109/ISAF.1992.300737
A. Y. Wu
{"title":"Field enhancement and reduction and elimination of remanent light flow in electrooptic bulk and thin film displays and spatial light modulators. Theory and practice","authors":"A. Y. Wu","doi":"10.1109/ISAF.1992.300737","DOIUrl":"https://doi.org/10.1109/ISAF.1992.300737","url":null,"abstract":"Efforts have been made to examine the mechanism of the remanent light flow problem in ceramic bulk (such as lead lanthanum zirconate titanate or PLZT) and thin-film (such as PLZT, BaTiO/sub 3/, LiNbO/sub 3/, SBN) displays and spatial light modulators. Effective methods of reducing and eliminating remanent light flow by using buffer and capping layers on the surface of the devices have been examined. Several very effective buffer and capping layers have been tested which can not only reduce or eliminate the remanent light flow but can also enhance the electrooptic effect by 10 to 30%. The physical origin of the remanent light flow, methods for eliminating it, and the physical origin of the electrooptic enhancement effect are examined, and experimental results are presented.<<ETX>>","PeriodicalId":367142,"journal":{"name":"ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124500853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical characteristics of Pb/sub 5/Al/sub 3/F/sub 19/-type crystals Pb/sub 5/Al/sub 3/F/sub 19/型晶体的光学特性
ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1992-08-30 DOI: 10.1109/ISAF.1992.300710
R. von der Muhll, J. Ravez, V. Andriamampianina, J. Chaminade, A. Simon, S. Abrahams
{"title":"Optical characteristics of Pb/sub 5/Al/sub 3/F/sub 19/-type crystals","authors":"R. von der Muhll, J. Ravez, V. Andriamampianina, J. Chaminade, A. Simon, S. Abrahams","doi":"10.1109/ISAF.1992.300710","DOIUrl":"https://doi.org/10.1109/ISAF.1992.300710","url":null,"abstract":"Large colorless crystal of the Pb/sub 5/Al/sub 3/F/sub 19/ type with dimensions approaching 1 cm/sup 3/, have been grown in sealed platinum tubes by the Bridgman technique. The phase transitions in Pb/sub 5/Al/sub 3/F/sub 19/ have been studied by optical microscopy on crystals oriented along different crystallographic directions. Ferroelastic domains have been observed; a reversible and reproducible ferroelastic-prototype transition has been shown. The thermal dependence of the birefringence has also been studied. The ferroic properties of Pb/sub 5/Al/sub 3/F/sub 19/ are discussed in relation to the crystal symmetry.<<ETX>>","PeriodicalId":367142,"journal":{"name":"ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics","volume":"49 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117239152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Preparation of lead-zirconate-titanate thin films by reactive RF-magnetron cosputtering using multi-element metallic targets and their evaluations 多元素靶金属射频磁控溅射制备锆钛酸铅薄膜及其评价
ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1992-08-30 DOI: 10.1109/ISAF.1992.300697
T. Yamamoto, T. Imai, T. Shiozaki
{"title":"Preparation of lead-zirconate-titanate thin films by reactive RF-magnetron cosputtering using multi-element metallic targets and their evaluations","authors":"T. Yamamoto, T. Imai, T. Shiozaki","doi":"10.1109/ISAF.1992.300697","DOIUrl":"https://doi.org/10.1109/ISAF.1992.300697","url":null,"abstract":"As-sputtered ferroelectric lead zirconate titanate (PZT) thin films were prepared on a Pt(800 nm)/Ti(350 nm)/SiO/sub 2/(150 nm)/Si","PeriodicalId":367142,"journal":{"name":"ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics","volume":"267 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120881413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dielectric relaxation in ceramics with composition (Ba/sub 1-y/Pb/sub y/)TiO/sub 3/ (Ba/sub - 1-y/Pb/sub -y/)TiO/sub - 3/陶瓷的介电弛豫
ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1992-08-30 DOI: 10.1109/ISAF.1992.300590
S. Kazaoui, J. Ravez, C. Elissalde
{"title":"Dielectric relaxation in ceramics with composition (Ba/sub 1-y/Pb/sub y/)TiO/sub 3/","authors":"S. Kazaoui, J. Ravez, C. Elissalde","doi":"10.1109/ISAF.1992.300590","DOIUrl":"https://doi.org/10.1109/ISAF.1992.300590","url":null,"abstract":"A dielectric dispersion study of perovskite-type ferroelectric ceramics in the frequency and temperature ranges 10/sup 6/-10/sup 9/ Hz and 300-500 K, respectively, has been performed. The ceramics have the composition (Ba/sub 1-y/Pb/sub y/)TiO/sub 3/ (0<or=y<or=0.2). A dielectric relaxation appears not only in the ferroelectric phase but also in the paraelectric one. For each composition a minimum of the relaxation frequency occurs at T/sub C/. The dipolar-type relaxation is correlated with coherent displacements of the Ti/sup 4+/ ions in the octahedron sites ordered either along chains or in the 3-D-lattice.<<ETX>>","PeriodicalId":367142,"journal":{"name":"ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124635560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New ferroelectrics Ba/sub 1-x/M/sub x/ (Li/sub 2x/Al/sub 2-2x/) O/sub 4-4x/F/sub 4x/ (M=Pb,Sr)
ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1992-08-30 DOI: 10.1109/ISAF.1992.300709
S.-Y. Huang, R. von der Muhll, J. Ravez, P. Hagenmuller
{"title":"New ferroelectrics Ba/sub 1-x/M/sub x/ (Li/sub 2x/Al/sub 2-2x/) O/sub 4-4x/F/sub 4x/ (M=Pb,Sr)","authors":"S.-Y. Huang, R. von der Muhll, J. Ravez, P. Hagenmuller","doi":"10.1109/ISAF.1992.300709","DOIUrl":"https://doi.org/10.1109/ISAF.1992.300709","url":null,"abstract":"New ferroelectric ceramics Ba/sub 1-x/M/sub x/(Li/sub 2x/Al/sub 2-2x/) O/sub 4-4/F/sub 4x/ with x in (0,0.07) for M=Pb and x in (0.0.1) for M=Sr have been studied. The behavior of T/sub c/ with composition has been determined. For Pb T/sub c/ decreases from 396 to 233 K when x rises from 0 to 0.04, and then, when x rises from 0.04 to 0.07, T/sub c/ increases from 233 to 320 K. The thermal variation of P/sub s/ (spontaneous polarization) has also been determined. The variation of T/sub c/ for the Sr compound is rather similar: T/sub c/ decreases first from 396 to 238 K when x rises from 0 to 0.05 and then remains constant when x increases up to 0.1.<<ETX>>","PeriodicalId":367142,"journal":{"name":"ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129746084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Crystallization and dielectrical properties of PLZT films derived from metallo-organic precursors 金属有机前驱体PLZT薄膜的结晶和介电性能
ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1992-08-30 DOI: 10.1109/ISAF.1992.300599
P. Sun, L.Y. Zhang, X. Yao
{"title":"Crystallization and dielectrical properties of PLZT films derived from metallo-organic precursors","authors":"P. Sun, L.Y. Zhang, X. Yao","doi":"10.1109/ISAF.1992.300599","DOIUrl":"https://doi.org/10.1109/ISAF.1992.300599","url":null,"abstract":"Lead lanthanum zirconate titanate (PLZT) films were deposited by the metallorganic decomposition (MOD) process using multilayer spinning. The crystallization kinetics, the evolution of the crystallographic structure, the dielectric behavior, and the ferroelectric properties were studied. It was found that a perovskite structure crystallizes from decomposed amorphous precursors in the temperature range 420-570 degrees C. A metastable pyrochlore phase always forms during the crystallization of the films from the amorphous phase, with an activation energy and a frequency factor of 143 kJ/mol and 7.9*10/sup 9/ s/sup -1/, respectively. Two modifications of the perovskite structure can be obtained for PLZT(8/0/100). One is rhombohedral with a=0.3948 nm and alpha =89.61 degrees for annealing in air at 550 degrees C; the other is tetragonal with a=0.3909 nm, c=0.4046 nm, and c/a=1.035.<<ETX>>","PeriodicalId":367142,"journal":{"name":"ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127167908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
AC conductivity and dielectric properties of sol-gel PZT thin films for ferroelectric memory applications 铁电存储器用溶胶-凝胶PZT薄膜的交流电导率和介电性能
ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1992-08-30 DOI: 10.1109/ISAF.1992.300670
X. Chen, A. Kingon, Orlando Auciello
{"title":"AC conductivity and dielectric properties of sol-gel PZT thin films for ferroelectric memory applications","authors":"X. Chen, A. Kingon, Orlando Auciello","doi":"10.1109/ISAF.1992.300670","DOIUrl":"https://doi.org/10.1109/ISAF.1992.300670","url":null,"abstract":"The dielectric properties and AC conductivity of sol-gel PZT (lead zirconate titanate) thin films were measured at frequencies between 10 and 10/sup 6/ Hz and temperatures between 25 degrees C and 500 degrees C. At high frequencies e.g., >2 kHz, a maximum is observed in the real part of the complex dielectric constant, which corresponds to the Curie point. However, at low frequencies, e.g., 200 Hz, the dielectric constant increases monotonically with temperature. A space charge blocking model and an electric charge hopping model are discussed in order to explain this phenomenon. Further experimental results on the frequency dependence of dielectric constant and AC conductivity provide additional support for the charge hopping model. The AC conductance at high temperatures is much more sensitive to temperature than that at low temperatures. The activation energy Q/sub 1/ at high temperatures is about 1.3 eV. The apparent activation energy Q/sub 2/ at low temperatures is about 0.35 eV.<<ETX>>","PeriodicalId":367142,"journal":{"name":"ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127472716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Polarization switching and long-time relaxation effects induced by off-center ions in KTa/sub 1-x/Nb/sub x/O/sub 3/ 偏心离子在KTa/sub - 1-x/Nb/sub -x/ O/sub - 3/中诱导的极化开关和长时间弛豫效应
ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1992-08-30 DOI: 10.1109/ISAF.1992.300639
L. A. Knauss, C. Jaquays, P. Adhikari, B. Vugmeister, J. Toulouse
{"title":"Polarization switching and long-time relaxation effects induced by off-center ions in KTa/sub 1-x/Nb/sub x/O/sub 3/","authors":"L. A. Knauss, C. Jaquays, P. Adhikari, B. Vugmeister, J. Toulouse","doi":"10.1109/ISAF.1992.300639","DOIUrl":"https://doi.org/10.1109/ISAF.1992.300639","url":null,"abstract":"A striking anomaly was observed in the behavior of KTN (KTa/sub 1-x/Nb/sub x/O/sub 3/), namely, the appearance of a remanent polarization well above T/sub c/. Hysteresis loops were measured at different frequencies in a 3% KTN crystal. The shape of the loop changed significantly with frequency, a behavior that is due to the slow relaxation of randomly distributed off-center Nb ions interacting in clusters. A model of this relaxation is developed, and hysteresis loops are calculated which are in good agreement with experiment.<<ETX>>","PeriodicalId":367142,"journal":{"name":"ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132446146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Preparation and characterization of lead lanthanum titanate thin films by metalorganic decomposition 金属有机分解法制备钛酸铅镧薄膜及表征
ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1992-08-30 DOI: 10.1109/ISAF.1992.300725
A.R. Khan, I. Yoo, S. Desu
{"title":"Preparation and characterization of lead lanthanum titanate thin films by metalorganic decomposition","authors":"A.R. Khan, I. Yoo, S. Desu","doi":"10.1109/ISAF.1992.300725","DOIUrl":"https://doi.org/10.1109/ISAF.1992.300725","url":null,"abstract":"Lead lanthanum titanate (PLT) thin films corresponding to 28 mol.% of La were fabricated by the metalorganic decomposition (MOD) process. The films were made from two solutions of different compositions. In the first case it was assumed that the single unbalanced positive charge of La/sup 3+/ gives rise to A-site or Pb vacancies, whereas in the second case the creation of B-site or Ti vacancies was assumed. Optical and electrical measurements indicated that the films made assuming B-site vacancies had better properties. It was also found from X-ray diffraction patterns that the films were cubic at room temperature. The films showed high resistivity and good permittivity values. The best dielectric permittivity value, obtained at the applied voltage level of 1.0 V, was 1285 while the lowest loss value was 0.03. The resistivity values at room temperature were as high as 10/sup 12/ ohm-cm.<<ETX>>","PeriodicalId":367142,"journal":{"name":"ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130857100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Dielectric properties of bismuth layer type ceramics with lanthanum and nickel co-substitutions 镧镍共取代铋层型陶瓷的介电性能
ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1992-08-30 DOI: 10.1109/ISAF.1992.300716
B. Huang, X. Wang, X. Yao
{"title":"Dielectric properties of bismuth layer type ceramics with lanthanum and nickel co-substitutions","authors":"B. Huang, X. Wang, X. Yao","doi":"10.1109/ISAF.1992.300716","DOIUrl":"https://doi.org/10.1109/ISAF.1992.300716","url":null,"abstract":"The dielectric properties of bismuth-layer-type ceramics with lanthanum and nickel cosubstitutions, Bi/sub 2/(Pb/sub 1-x/La/sub x/)(Nb/sub 2-x/3/Ni/sub x/3/)O/sub 9/ are presented. Above the Curie temperature, the dielectric constant decreases at a rate that can be approximately described by Smolensky's quadratic law, showing relaxor behavior. At room temperature, the dielectric constant and loss tangent of the new materials are higher than those of the parent Bi/sub 2/PbNb/sub 2/O/sub 9/. High resistivity and breakdown strength make these materials very attractive for applications such as a high-voltage ceramic capacitor dielectric.<<ETX>>","PeriodicalId":367142,"journal":{"name":"ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126247350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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