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Conference on Optoelectronic and Microelectronic Materials and Devices, 2004.最新文献

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Photon Upconversion Devices 光子上转换器件
Conference on Optoelectronic and Microelectronic Materials and Devices, 2004. Pub Date : 2006-05-05 DOI: 10.1117/12.665689
H. Liu, H. Luo, D. Ban, M. Buchanan, Z. Wasilewski, A. Springthorpe, P. Poole
{"title":"Photon Upconversion Devices","authors":"H. Liu, H. Luo, D. Ban, M. Buchanan, Z. Wasilewski, A. Springthorpe, P. Poole","doi":"10.1117/12.665689","DOIUrl":"https://doi.org/10.1117/12.665689","url":null,"abstract":"This paper reviews our development effort in realizing and perfecting photon upconversion devices for wavelengths from 1.5 μm region to 0.87 μm. The basic idea is to integrate a 1.5-μm detector with a 0.87-μm light emitting diode (LED), connected in series. The detected photocurrent drives the LED, thereby achieving the upconversion. Various approaches of integration methods and device designs have been tested","PeriodicalId":366603,"journal":{"name":"Conference on Optoelectronic and Microelectronic Materials and Devices, 2004.","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125660486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Role of Thin GaAs Interlayer on InAs Quantum Dots Grown on InGaAsP/InP 薄GaAs中间层在InGaAsP/InP上生长InAs量子点中的作用
Conference on Optoelectronic and Microelectronic Materials and Devices, 2004. Pub Date : 1900-01-01 DOI: 10.1109/COMMAD.2004.1577558
S. Barik, H. Tan, Chennupati Jagadish
{"title":"Role of Thin GaAs Interlayer on InAs Quantum Dots Grown on InGaAsP/InP","authors":"S. Barik, H. Tan, Chennupati Jagadish","doi":"10.1109/COMMAD.2004.1577558","DOIUrl":"https://doi.org/10.1109/COMMAD.2004.1577558","url":null,"abstract":"The role of increasing GaAs thickness (0-3 nm) to improve the optical quality and tune the emission wavelength of InAs quantum dots (QDs) grown on GaInAsP buffer on (100) InP substrate by metalorganic chemical vapor deposition was studied. The growth of a very thin (0.3 nm-0.6 nm) GaAs interlayer between GaInAsP buffer and InAs QDs layer reduced the mean height and size fluctuation of InAs QDs by suppressing the As/P exchange reaction. As the GaAs interlayer thickness increased further, the surface started to be roughened with formation of dips and trenches. The InAs QDs inclined to agglomerate around the dips and trenches and the improved optical quality of InAs QDs due to insertion of a thin GaAs layer started to disappear. A blue-shift of the peak emission wavelength of InAs QDs from 1533 nm to 1467 nm was also observed as the GaAs interlayer thickness increased from 0.3 nm to 0.6 nm but there was no further blue-shift with further increase of the GaAs interlayer thickness","PeriodicalId":366603,"journal":{"name":"Conference on Optoelectronic and Microelectronic Materials and Devices, 2004.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115628432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Time Resolved and Time Integrated Photoluminescence for Study of Optical Properties of Silicon Quantum Dots 硅量子点光学特性的时间分辨和时间积分光致发光研究
Conference on Optoelectronic and Microelectronic Materials and Devices, 2004. Pub Date : 1900-01-01 DOI: 10.1109/COMMAD.2004.1577567
L. Dao, X. Wen, M. T. Do, P. Hannaford, E. Cho, Y. Cho, Yidan Huang, M. Green
{"title":"Time Resolved and Time Integrated Photoluminescence for Study of Optical Properties of Silicon Quantum Dots","authors":"L. Dao, X. Wen, M. T. Do, P. Hannaford, E. Cho, Y. Cho, Yidan Huang, M. Green","doi":"10.1109/COMMAD.2004.1577567","DOIUrl":"https://doi.org/10.1109/COMMAD.2004.1577567","url":null,"abstract":"In this paper we report studies of the optical properties of silicon quantum dot structures. From time-resolved and time-integrated photoluminescence measurements we investigate the state-filling effect and carrier lifetime and discuss the parabolic confinement of quantum dot structures. The photoluminescence intensities for different quantum dot levels decay with a stretched exponential function and the decay times are in the range 2 - 60 μs","PeriodicalId":366603,"journal":{"name":"Conference on Optoelectronic and Microelectronic Materials and Devices, 2004.","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123119468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-Photon Excited Photoluminescence in InGaN Multi-Quantum-Wells Structures InGaN多量子阱结构中的双光子激发光致发光
Conference on Optoelectronic and Microelectronic Materials and Devices, 2004. Pub Date : 1900-01-01 DOI: 10.1109/COMMAD.2004.1577515
Q. Li, S. Xu, D. Dai, C. Che
{"title":"Two-Photon Excited Photoluminescence in InGaN Multi-Quantum-Wells Structures","authors":"Q. Li, S. Xu, D. Dai, C. Che","doi":"10.1109/COMMAD.2004.1577515","DOIUrl":"https://doi.org/10.1109/COMMAD.2004.1577515","url":null,"abstract":"In this work, we report on the two-photon absorption induced luminescence of InGaN multiple quantum wells grown on sapphire. When the sample was excited by femtosecond near-infrared laser pulses at room temperature, an intense luminescence signal peaked at ∼415 nm from the sample was observed, which indicates strong nonlinear optical effect in InGaN quantum well structures. The interferometric autocorrelated luminescence traces were recorded to verify the second order nonlinearity of the luminescence. In addition, the strong second harmonic generation signal of the excitation laser was also observed. The mechanism of the two-photon excited photoluminescence in InGaN quantum wells was discussed","PeriodicalId":366603,"journal":{"name":"Conference on Optoelectronic and Microelectronic Materials and Devices, 2004.","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124289169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling the Effects of Interface Traps on Scanning Capacitance Microscopy dC/dV Measurement 界面陷阱对扫描电容显微镜dC/dV测量的影响建模
Conference on Optoelectronic and Microelectronic Materials and Devices, 2004. Pub Date : 1900-01-01 DOI: 10.1109/COMMAD.2004.1577514
Y. Hong, Y. Yeow
{"title":"Modeling the Effects of Interface Traps on Scanning Capacitance Microscopy dC/dV Measurement","authors":"Y. Hong, Y. Yeow","doi":"10.1109/COMMAD.2004.1577514","DOIUrl":"https://doi.org/10.1109/COMMAD.2004.1577514","url":null,"abstract":"Scanning capacitance microscopy (SCM) measurement is a proposed tool for dopant profile extraction for semiconductor material. The influence of interface traps on SCM dC/dV data is still unclear. In this paper we report on the simulation work used to study the nature of SCM dC/dV data in the presence of interface traps. A technique to correctly simulate dC/dV of SCM measurement is then presented based on our justification. We also analyze how charge of interface traps surrounding SCM probe would affect SCM dC/dV due the small SCM probe dimension","PeriodicalId":366603,"journal":{"name":"Conference on Optoelectronic and Microelectronic Materials and Devices, 2004.","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126604238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Characterisation of MBE Grown HgCdTe Using Scanning Laser Microscopy MBE生长HgCdTe的扫描激光显微镜表征
Conference on Optoelectronic and Microelectronic Materials and Devices, 2004. Pub Date : 1900-01-01 DOI: 10.1109/COMMAD.2004.1577499
C. Musca, V. Chan, R. Sewell, J. Dell, L. Faraone
{"title":"Characterisation of MBE Grown HgCdTe Using Scanning Laser Microscopy","authors":"C. Musca, V. Chan, R. Sewell, J. Dell, L. Faraone","doi":"10.1109/COMMAD.2004.1577499","DOIUrl":"https://doi.org/10.1109/COMMAD.2004.1577499","url":null,"abstract":"The performance of infrared detectors fabricated from semiconducting HgCdTe is highly dependent on the minority carrier lifetime of the material. A high minority carrier lifetime is required to achieve good signal to noise ratio in both photoconductive and photovoltaic infrared detectors. In this work a scanning laser microscope has been used to investigate the minority carrier lifetime in n-type epitaxial HgCdTe using the photoconductive decay technique and spatial photoresponse. The results indicate that the MBE grown HgCdTe is of high quality and the lifetime is limited by the device surface passivation","PeriodicalId":366603,"journal":{"name":"Conference on Optoelectronic and Microelectronic Materials and Devices, 2004.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129707573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Finite Element Modelling of Flexural Plate Devices 弯曲板装置的有限元建模
Conference on Optoelectronic and Microelectronic Materials and Devices, 2004. Pub Date : 1900-01-01 DOI: 10.1109/COMMAD.2004.1577513
Glenn I. Matthews, S. Ippolito, K. Kalantar-zadeh, W. Wlodarski, Anthony Holland, Glenn I. Matthews, S. Ippolito
{"title":"Finite Element Modelling of Flexural Plate Devices","authors":"Glenn I. Matthews, S. Ippolito, K. Kalantar-zadeh, W. Wlodarski, Anthony Holland, Glenn I. Matthews, S. Ippolito","doi":"10.1109/COMMAD.2004.1577513","DOIUrl":"https://doi.org/10.1109/COMMAD.2004.1577513","url":null,"abstract":"A two dimensional finite element model has been developed for the simulation of a layered flexural plate wave device using the ANSYS package. The simulated device consists of a 2.0 μm silicon nitride thin film, followed by a 0.4 μm aluminum ground layer. A 0.6 μm zinc oxide piezoelectric layer was defined to excite acoustic waves. Good agreement of device frequency response and displacement profiles have been achieved in comparison with other numerical simulation methods. In this paper, the finite element (FE) method is proposed as a benchmark for an alternative analysis based upon a Green's function method. Furthermore, the FE method can be used to obtain other device parameters, such as insertion loss and charge density, which are presented","PeriodicalId":366603,"journal":{"name":"Conference on Optoelectronic and Microelectronic Materials and Devices, 2004.","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114785366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Generation of Ultrasonic Waves from an Optically Driven GaAs Thin Film 光驱动砷化镓薄膜产生超声波
Conference on Optoelectronic and Microelectronic Materials and Devices, 2004. Pub Date : 1900-01-01 DOI: 10.1109/COMMAD.2004.1577524
R. Izumoto, S. Nashima, K. Kubota, P. Vaccaro, J.M. Zanardi Ocampo, N. Saito, M. Hosoda
{"title":"Generation of Ultrasonic Waves from an Optically Driven GaAs Thin Film","authors":"R. Izumoto, S. Nashima, K. Kubota, P. Vaccaro, J.M. Zanardi Ocampo, N. Saito, M. Hosoda","doi":"10.1109/COMMAD.2004.1577524","DOIUrl":"https://doi.org/10.1109/COMMAD.2004.1577524","url":null,"abstract":"We demonstrate an optically driven MEMS that moves when irradiated by light. The MEMS is constructed from a GaAs/InGaAs thin film. High-frequency optical pulses drive mechanical vibration of the film to generate ultrasonic waves in air. We also measured photoluminescence (PL) from the sample to explore the cause of the optical drive. Laser irradiation caused a redshift of the GaAs PL up to 960 nm as the laser power increased. Our result implies a local heating in the thin film that causes the PL redshift, which drives the thin film by thermal expansion","PeriodicalId":366603,"journal":{"name":"Conference on Optoelectronic and Microelectronic Materials and Devices, 2004.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127647684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Accuracy Limitations Introduced by Digital Projection Sources in Profilometric Optical Metrology Systems 轮廓光学测量系统中数字投影光源的精度限制
Conference on Optoelectronic and Microelectronic Materials and Devices, 2004. Pub Date : 1900-01-01 DOI: 10.1109/COMMAD.2004.1577540
M. Baker, J. Chicharo, J. Xi, E. Li
{"title":"Accuracy Limitations Introduced by Digital Projection Sources in Profilometric Optical Metrology Systems","authors":"M. Baker, J. Chicharo, J. Xi, E. Li","doi":"10.1109/COMMAD.2004.1577540","DOIUrl":"https://doi.org/10.1109/COMMAD.2004.1577540","url":null,"abstract":"The accuracy of profilometric optical metrology systems utilising digital fringe projection (DFP) is analysed. An analytical model to describe theoretical accuracy limitation is derived and given as a function of object distance from the projector, projector resolution, projection angle and also object gradient. Associated limitations of the model are also discussed and analysed. The validity of the new model is demonstrated through practical experimentation","PeriodicalId":366603,"journal":{"name":"Conference on Optoelectronic and Microelectronic Materials and Devices, 2004.","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134378744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A Computational Study on the Growth and Composition of InGaAsP Film in a Horizontal MOCVD Reactor InGaAsP薄膜在卧式MOCVD反应器中生长和组成的计算研究
Conference on Optoelectronic and Microelectronic Materials and Devices, 2004. Pub Date : 1900-01-01 DOI: 10.1109/COMMAD.2004.1577502
Dong-Seok Kim, I. Im, Woo-Seung Kim
{"title":"A Computational Study on the Growth and Composition of InGaAsP Film in a Horizontal MOCVD Reactor","authors":"Dong-Seok Kim, I. Im, Woo-Seung Kim","doi":"10.1109/COMMAD.2004.1577502","DOIUrl":"https://doi.org/10.1109/COMMAD.2004.1577502","url":null,"abstract":"Distribution of growth rate and composition of InGaAsP films along the reactor length direction grown by metalorganic chemical vapor deposition process were studied using computational methods. The influences of process parameters such as pressure, temperature and precursors inlet partial pressures on the growth rate and composition distributions are analyzed. Trimethyl-indium, trimethyl-gallium, tertiary-butylarsine and tertiary-butylphosphine were used as precursors and hydrogen as dilution gas. The reaction model includes 4 gas-phase reactions and 8 surface reactions. Predicted values of the growth rate and composition were compared to the experimental results to validate the numerical model. The influences of heater temperature and operating pressure were analyzed thereafter","PeriodicalId":366603,"journal":{"name":"Conference on Optoelectronic and Microelectronic Materials and Devices, 2004.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130806252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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