{"title":"Evaluation of GaN substrates for vertical GaN power device applications","authors":"Kachi Tetsu, Uesugi Tsutomu","doi":"10.18494/sam.2013.881","DOIUrl":"https://doi.org/10.18494/sam.2013.881","url":null,"abstract":"Pn diodes were fabricated on a GaN substrate prepared by the Na flux method. Edge and mix dislocations that developed from the GaN substrate were observed in the diodes. These threading dislocations did not induce leakage current even when the dislocation density was in the range of 105–106 cm–2. These results indicate that a GaN substrate that does not include pure screw dislocations will be applicable to vertical power devices.","PeriodicalId":366248,"journal":{"name":"IEICE technical report. Component parts and materials","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116296636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Normally-off AlGaN/GaN HEMT with Recessed Gate for High Power Applications","authors":"K. Nakata, T. Kawasaki, S. Yaegassi","doi":"10.7567/SSDM.2005.I-1-3","DOIUrl":"https://doi.org/10.7567/SSDM.2005.I-1-3","url":null,"abstract":"","PeriodicalId":366248,"journal":{"name":"IEICE technical report. Component parts and materials","volume":"201 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116167906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High-speed signal transmission at the front of a bookshelf packaging system","authors":"S. Koike, K. Kaizu","doi":"10.1109/96.641503","DOIUrl":"https://doi.org/10.1109/96.641503","url":null,"abstract":"A front-connection technique using the front-side of the circuit board in rack systems configured like bookshelves is proposed to increase pin-counts for high-throughput switching modules (>20 Gb/s). This configuration technique was implemented using newly developed front connectors and flexible printed-circuit (FPC) cables that are both impedance-matched. This configuration enables the use of a new transmission route that meanders through every signal transmission line of every circuit board, backplane, and FPC cable. This route can extend the functional block size from the size of the circuit board to that of the unit, In a signal transmission experiment between circuit boards with this meander route passing through signal lines of an 18-cm-long FPC cable and over a distance of ten slots in the backplane, error-free (<10/sup -11/) signal transmission of 2/sup 23/-1 nonreturn-to-zero (NRZ) pseudo-random bit sequences (PRBS) at 622.08 Mb/s was obtained.","PeriodicalId":366248,"journal":{"name":"IEICE technical report. Component parts and materials","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128853123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}