{"title":"Transmission Line Analogy for Wave Propagation in Graphene-Based Structures","authors":"H. Sanada, H. Matsuzaki, N. Wada, M. Takezawa","doi":"10.23919/PIERS.2018.8597700","DOIUrl":"https://doi.org/10.23919/PIERS.2018.8597700","url":null,"abstract":"Quantum mechanical wave phenomena in semiconductor multilayer structures are described with the effective-mass Schrödinger equation. Up until now, we have focused on the similarity between the effective-mass Schrödinger equation and Maxwell's equations, and we have effectively utilized transmission-line theory as a means of analysis and design of quantum mechanical wave phenomena. On the other hand, wave phenomena in graphene are described with the massless Dirac equation; accordingly, treating it with circuit theory necessitates using a generalized transmission line theory. In this paper, it is shown that the generalized transmission line theory can be effectively used to treat quantum mechanical wave phenomena in graphene multilayer structures. Our results show that the wave phenomena in graphene can be treated with a equivalent transmission line with characteristic impedances that differs according to the propagation directions. Based on the proposed method, some numerical simulations of the wave propagation in graphene multilayer structures were performed, and the appropriateness of the proposed method was verified.","PeriodicalId":355217,"journal":{"name":"2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129483653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Chang, C. Wang, Y. Wu, Ta-Shun Chu, Yu-Jiu Wang
{"title":"An X-Band Waveguide Jig for Pre-Screening Testing of Fully-Integrated Elementary Phased-Array Transceiver Antenna-in-Package","authors":"L. Chang, C. Wang, Y. Wu, Ta-Shun Chu, Yu-Jiu Wang","doi":"10.23919/PIERS.2018.8597854","DOIUrl":"https://doi.org/10.23919/PIERS.2018.8597854","url":null,"abstract":"A large 9-10 GHz tile-based scalable phased-array system (over 128 elements) is built by flip-chip bonding of elementary antenna-in-package (AiP) modules on a large interposer PCB. Each module has a top radiating surface and a bottom BGA bonding surface. Due to the strict spacing requirement of a phased-array system, rework of any failed modules from the interposer PCB is prone to create more damages to the system and is prohibited. It is necessary to have a reliable and Automatic Test Equipment (ATE)-compatible test procedures to pre-screen qualified elementary modules for bonding. However, conventional ATE-compatible test jig designs can neither receive radiation signals from antenna nor feed test signals into the antenna. In this paper, a waveguide jig for AiP pre-screening is proposed. This jig system consists of a WR-90 adapter, a horn antenna, a Torlon cap and socket with POGO pins, and a PCB to interface with ATE. To test AiP transmitter, controls and test signals are provided through PCB connectors, with radiation signals collected from the WR-90 adaptor. To test the AiP receiver, radiation signals are feeding through the WR-90 adaptor, and the receiver output signals are collected from the PCB connectors. To calibrate waveguide jig return loss, a set of AiP SOL modules are used to remove PCB and test fixture loss from the overall system loss. The waveguide jig achieves a flat simulated −2.4 dB from AiP antenna port to waveguide port from 8 to 12 GHz. This waveguide jig provides a fast and reliable approach to select qualified AiP for phased array system assemblies, and the final system-level over-the-air testing.","PeriodicalId":355217,"journal":{"name":"2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129891736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An Improved Algorithm for Fingerprint Identification Based on Line Tracking and Mirror-Assisted Method","authors":"Lan Chen, Tao Wang, Hai Yang Yin, He Xu, M. Tong","doi":"10.23919/PIERS.2018.8598180","DOIUrl":"https://doi.org/10.23919/PIERS.2018.8598180","url":null,"abstract":"With the continuous development of the society, people's understanding of fingerprint identification technology has also expanded from criminal investigation into commercial field. In recent years, the mainstream fingerprint algorithm is to seek fingerprint feature points on the fingerprint thinning image. These feature points are mainly endpoints and bifurcation points. Although the current fingerprint algorithm achieves high accuracy in both the false acceptance rate (FAR) and the false rejection rate (FRR), it has recently been found that it can be used to unlock other people's fingerprint equipment through the orange peel and the fingerprint sticker. Therefore, the fingerprint algorithm is further studied. This paper makes a great deal of improvement in fingerprint feature extraction and recognition algorithm. The feature points of fingerprint are extracted by using line tracking method and mirror assisted method, which greatly accelerated the extraction time of feature points. Moreover, in the aspect of fingerprint identification, the method of dynamic threshold is adopted to adjust the threshold value according to the number of characteristic points within a certain range in the image to be verified. After each fingerprint is verified successfully, the information extracted from this fingerprint is interacted with the original database, which has achieved the effect of data self-correction. Then, a large number of experiments are carried out to show that the improved fingerprint algorithm can quickly extract feature points and verify identity. And the accuracy of the FAR and the FRR is achieved.","PeriodicalId":355217,"journal":{"name":"2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama)","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127109526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Impact from JFET Region Doping on Characteristics of Power MOSFETs","authors":"Tao Jin, Q. Feng, Xiaopei Chen","doi":"10.23919/PIERS.2018.8598209","DOIUrl":"https://doi.org/10.23919/PIERS.2018.8598209","url":null,"abstract":"With a fixed breakdown voltage of the power MOSFET, the on-state resistance is always optimized by introducing a heavy doping concentration into the JFET region. This heavy doping concentration can be accomplished by ion implantation and following corresponding thermal steps. The implanted atoms distribute in a related range of depth. This phenomenon will make compensation of the p-type impurities in base regions. Thus the threshold voltage and blocking capability of the device will be different from the intended targets. In this paper, analytical and simulation study are made to analyze the impact from JFET region doping on the characteristics of power MOSFETs. Process parameters like implantation dosage and drive-in temperature are the key factors which have important influence on the final device characteristics. With fixed drive-in temperature and time, bigger implantation dosage will lead a bigger compensation of the p-type atoms in base regions. Then the threshold voltage and the breakdown voltage will be smaller. With a fixed implantation dosage, the higher drive-in temperature will make the atoms diffuse deeper. If the junction depth of the JFET region doping exceeds the junction depth of the base regions, the breakdown voltage will decrease obviously. So the process parameters for JFET region doping should be adjusted carefully.","PeriodicalId":355217,"journal":{"name":"2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129013128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"T-Shaped Slot Loaded Rectangular Patch Antenna with Enhanced Bandwidth Using Defected Ground Structure","authors":"N. Yadav, M. Tripathy, Y. Jeong","doi":"10.23919/PIERS.2018.8597629","DOIUrl":"https://doi.org/10.23919/PIERS.2018.8597629","url":null,"abstract":"This manuscript represents the T-shaped slot loaded stacked patch with D.G.S. (Defected Ground Structure)for the application of UWB. The antenna has an overall size of 30.8mm by 24.4mm and gives a bandwidth near about 77.4% from 5.3GHz to 12.0GHz at center frequency of 8.65 GHz. Without DGS, antenna work like dual band antenna. Maximum gain of the UWB antenna is 5.84 dBi with DGS and 9.20 dBi without DGS. The proposed antenna has been analyzed using IE3D electromagnetic solver, which is based on MOM method.","PeriodicalId":355217,"journal":{"name":"2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125677341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jiajia Duan, Xiuchen Wang, Yayun Li, Zhe Liu, Yaping Li
{"title":"Effect of Absorbing Coating on Shielding Effectiveness of Electromagnetic Shielding Fabric","authors":"Jiajia Duan, Xiuchen Wang, Yayun Li, Zhe Liu, Yaping Li","doi":"10.23919/PIERS.2018.8597944","DOIUrl":"https://doi.org/10.23919/PIERS.2018.8597944","url":null,"abstract":"In order to get better effects of electromagnetic protection, the study on the overall shielding effectiveness of electromagnetic shielding fabric by absorbing wave coating is paid more and more attention [1]. But up to now, the influence of different content and kinds of absorbing coating on the shielding effectiveness of electromagnetic shielding fabric has not been clearly defined. In the range of 1G-18G, The article uses DR-SO4 window shielding efficiency test box to explore the effect of different content of carbon nanotube powder, graphene powder and nano nickel powder coating on the shielding effectiveness of stainless steel electromagnetic shielding fabrics [2]. Through data to analysis this question. In the comparative test of different contents of the same material, At the 4000 MHz band, All three materials' value have peaked. Carbon nanotubes: The highest shielding effectiveness is 20%. Its value is about 72 dB. Nano nickel powder: The nickel powder coating content of 16% has the highest shielding effectiveness. Nano-graphene: The coated fabric with a content of 20% has the highest shielding effectiveness. This study has initially revealed the effect of absorbing coatings on the shielding effectiveness of electromagnetic shielding fabrics. It is important to design, produce and evaluate high-performance electromagnetic shielding fabrics.","PeriodicalId":355217,"journal":{"name":"2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131088252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Starodubov, A. Serdobintsev, A. Pavlov, V. Galushka, P. Ryabukho, N. Ryskin
{"title":"A Novel Approach to Microfabrication of Planar Microstrip Meander-Line Slow Wave Structures for Millimeter-Band TWT","authors":"A. Starodubov, A. Serdobintsev, A. Pavlov, V. Galushka, P. Ryabukho, N. Ryskin","doi":"10.23919/PIERS.2018.8597953","DOIUrl":"https://doi.org/10.23919/PIERS.2018.8597953","url":null,"abstract":"A novel technology for microfabrication of millimeter and THz band planar microstrip slow-wave structures (SWS) is proposed. The technology is based on magnetron sputtering and laser ablation methods. The magnetron sputtering method is used to deposit a thin layer of metal (copper) on a quartz substrate. Then laser ablation is utilized to fabricate a slow wave structure from the copper layer. V-band (50–70 GHz) meander-line SWSs were fabricated and characterized by scanning electron and optical microscopy. The proposed technology has significant advantages in cost, speed and flexibility over lithography processes commonly utilized for such applications. The future work will be aimed to expansion of the proposed technology to manufacturing of higher-frequency W-band (75–110 GHz) and E-band (110–170 GHz) planar SWSs.","PeriodicalId":355217,"journal":{"name":"2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131091144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ilham Fikry, Levy Olivia Nur, B. S. Nugroho, A. Munir
{"title":"Thin EM Wave Absorber Metasurface Based on Artificial Magnetic Conductor","authors":"Ilham Fikry, Levy Olivia Nur, B. S. Nugroho, A. Munir","doi":"10.23919/PIERS.2018.8597985","DOIUrl":"https://doi.org/10.23919/PIERS.2018.8597985","url":null,"abstract":"Most of electromagnetics (EM) wave absorbers have been realized on some hard substrates. Therefore the use was limited only in the field of planar surfaces, while absorbing EM waves are required with various forms of field. In this paper, based on a principle of artificial magnetic conductor (AMC) used as a metasurface, a thin EM wave absorber composed of octagonal patch array is designed on a dielectric substrate of silicon with the relative permittivity of 5.7 and the thickness of 0.3 mm. The use of thin substrate for the absorber is necessary to have possibility and flexibility in surface of field with a non planar shape. To obtain high absorption rate of proposed wave absorber, resistive elements are incorporated into the patches and connecting to the adjacent patches. The characterization result shows that the reflection coefficient was up to 29.15 dB at the resonant frequency of 2.5 GHz for the value of resistive elements of $2100 Omega$, in which this is much higher than the result without resistive elements.","PeriodicalId":355217,"journal":{"name":"2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama)","volume":"231 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123728397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"8-Loop Antenna Array in the 5 Inches Size Smartphone for 5G Communication the 3.4 GHz-3.6 GHz Band MIMO Operation","authors":"Li-Yan Rao, C. Tsai","doi":"10.23919/PIERS.2018.8598072","DOIUrl":"https://doi.org/10.23919/PIERS.2018.8598072","url":null,"abstract":"This dissertation proposes a design and architecture of eight loop antennas proposed in a limited space, a 3.5 GHz band (3.4 GHz-3.6 GHz) for 5G communication [1], and a multi-input multiple-output (MIMO) smartphone. In the limited space of a simulated 5 inches screen smartphone, taking into account of the cell phone battery and LCD screens and electronic components may affect the antenna, the surrounding environment is defined as copper metal ground. The overall size of the smartphone is 70 × 145 × 8 mm3 and is designed for an antenna range of 10 × 55 × 5 mm3 and 10 × 100 × 5 mm3, the single designed loop antenna volume is 14.2 × 9.4 mm2 suitable for as the 5G smart phone embedded antenna. Three and five loop antennas are placed on the top of the FR4 board in a stacking manner of two sides. For these 8 proposed loop antenna with enough bandwidth of the band 3.4-3.6 GHz [2], return losses S11 to S88 Spec. < −6 dB, mutually acceptable isolation approximately 15 dB, the correlation value ECC (Envelope Correlation Coefficient) of any two antennas less than 0.2 [3], the single loop antenna efficiency is about 40% and the overall antenna gain is 2 dBi. The experimental results are presented and discussed.","PeriodicalId":355217,"journal":{"name":"2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130714737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Characteristics of 340 GHz Slow Wave Structure for Staggered Double-Vane Traveling Wave Tube","authors":"Yanbin He, C. Ruan","doi":"10.23919/PIERS.2018.8597962","DOIUrl":"https://doi.org/10.23919/PIERS.2018.8597962","url":null,"abstract":"As one type of full-metal slow wave structure (SWS), the staggered double-vane (SDV) used in traveling wave tube (TWT) has many advantages. In this paper, a new microstructure SWS using the staggered double-vane is put forward by using two adjacent modes, which can work in the 340 GHz TWT with ultra-high broad bandwidth. The dispersion characteristics, interaction impedance and the simple input/output taper coupler for TWT are calculated and analyzed. The simulation result shows that this kind of SDV-SWS has a wide bandwidth of 78 GHz. And the high interaction impedance can be achieved to $0.5 Omega$ with the potential to enhance the efficiency of energy exchange process between the electron beam and high frequency field in terahertz TWT.","PeriodicalId":355217,"journal":{"name":"2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama)","volume":"210 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132071371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}