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2022 17th European Microwave Integrated Circuits Conference (EuMIC)最新文献

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Development and RF-Performance of AlGaN/GaN and InAlN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates 在大直径高电阻硅衬底上制备AlGaN/GaN和InAlN/GaN hemt及其射频性能
2022 17th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2022-09-26 DOI: 10.23919/EuMIC54520.2022.9923525
M. Moser, M. Pradhan, M. Alomari, B. Schoch, K. Sharma, I. Kallfass, A. García-Luque, T. Martín-Guerrero, J. Burghartz
{"title":"Development and RF-Performance of AlGaN/GaN and InAlN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates","authors":"M. Moser, M. Pradhan, M. Alomari, B. Schoch, K. Sharma, I. Kallfass, A. García-Luque, T. Martín-Guerrero, J. Burghartz","doi":"10.23919/EuMIC54520.2022.9923525","DOIUrl":"https://doi.org/10.23919/EuMIC54520.2022.9923525","url":null,"abstract":"A CMOS-compatible industrial processing and RF analysis of 150 mm GaN-on-HR-Si substrates with AlGaN and InAlN barrier is presented. Process development along with transfer to large-wafer scale is shown and some HEMT calibration devices produced on AlGaN/GaN following the aforementioned procedure are characterized in terms of RF-performance by using a set of measured multi-bias $S$-parameters. An automatic small-signal equivalent circuit extraction strategy for these AlGaN/GaN DUTs is validated and some de-embedded figures of merit, namely $mathrm{f}_{mathbf{T}}approx$ 20 GHz and $f_{boldsymbol{max}}approx$ 41 GHz are drawn out for initial evaluation of the technology.","PeriodicalId":338291,"journal":{"name":"2022 17th European Microwave Integrated Circuits Conference (EuMIC)","volume":"60 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115603852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An 8 bit 1.73mW 1.25 GS/s Single-Core SAR ADC in 22 nm FDSOI CMOS 一个8位1.73mW 1.25 GS/s单核SAR ADC，采用22纳米FDSOI CMOS
2022 17th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2022-09-26 DOI: 10.23919/EuMIC54520.2022.9923451
Simon Buhr, Jan Plíva, Tobias Schirmer, M. Khafaji, F. Ellinger
{"title":"An 8 bit 1.73mW 1.25 GS/s Single-Core SAR ADC in 22 nm FDSOI CMOS","authors":"Simon Buhr, Jan Plíva, Tobias Schirmer, M. Khafaji, F. Ellinger","doi":"10.23919/EuMIC54520.2022.9923451","DOIUrl":"https://doi.org/10.23919/EuMIC54520.2022.9923451","url":null,"abstract":"A low-power 8 bit single-core successive approximation register (SAR) analog-to-digital converter (ADC) with a sampling rate of up to 1.25 GS/s based on alternating comparators is studied. To prove the concept, the circuit is implemented in a 22 nm fully-depleted silicon-on-insulator (FDSOI) technology. Key power dissipating factors are explored considering the high sampling rate. A scheme is investigated, where each memory cell activates the second next memory cell to relax the speed requirement and allow for power savings compared to conventional approaches. A modified, non-overlapped signaling is used in the driver for the capacitive digital-to-analog converter (CDAC) to reduce a direct-path current and to ease the reference buffer design. Measurements show an effective number of bits (ENOB) of 6.86 bit near the Nyquist frequency. A power consumption of 1.73mW is measured, leading to the best Walden figure-of-merit of 11.9 fJ/c.-step for a single-core SAR ADC above 1 GS/s.","PeriodicalId":338291,"journal":{"name":"2022 17th European Microwave Integrated Circuits Conference (EuMIC)","volume":"52 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123213734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Wideband mmWave Transceiver IC for 5G Radios 5G无线电宽带毫米波收发器IC
2022 17th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2022-09-26 DOI: 10.23919/EuMIC54520.2022.9923519
N. Naskas, Nikos Alexiou, Spyros Gkardiakos, Aris Agathokleous, Nikos Tsoutsos, Kostas Kontaxis, George Ntounas, Ioannis Kousparis
{"title":"Wideband mmWave Transceiver IC for 5G Radios","authors":"N. Naskas, Nikos Alexiou, Spyros Gkardiakos, Aris Agathokleous, Nikos Tsoutsos, Kostas Kontaxis, George Ntounas, Ioannis Kousparis","doi":"10.23919/EuMIC54520.2022.9923519","DOIUrl":"https://doi.org/10.23919/EuMIC54520.2022.9923519","url":null,"abstract":"A wideband $0.13mu m$ SiGe BiCMOS direct-conversion transceiver chip for 5G communications in the Ka-band is presented. The receiver (RX) includes low-noise amplifiers (LNA) with variable gain, a quadrature down-converter with gain control, an IQ local-oscillator (LO) generation network and an active IQ baseband (BB) filter with a 28-224MHz adjustable cut-off frequency. It achieves a 5.5dB noise figure (NF) and a maximum input-referred 3rd order intercept point (IIP3) of -1dBm while having a gain control range of 90dB. The transmitter (TX) is comprised of an active IQ baseband filter with programmable cut-off frequency between 90-720MHz, an IQ LO generation network, an IQ up-converter with gain control, LO leakage compensation and a variable gain amplifier (VGA). It attains 12.8dBm saturated output power (Psat) and 20dBm output-referred 3rd order intercept point (OIP3) for 14dB maximum voltage gain, while having a gain control range of 50dB. The transceiver has 8-11GHz LO input and consumes 540mW in receive mode and 500mW in transmit mode from 2.6V supply.","PeriodicalId":338291,"journal":{"name":"2022 17th European Microwave Integrated Circuits Conference (EuMIC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123533359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Switched shield mm-wave tunable slow wave CPW in FinFET CMOS technology FinFET CMOS技术中的开关屏蔽毫米波可调慢波CPW
2022 17th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2022-09-26 DOI: 10.23919/EuMIC54520.2022.9923529
Carla Moran Guizan, Peter Baumgartner, S. Heinen
{"title":"Switched shield mm-wave tunable slow wave CPW in FinFET CMOS technology","authors":"Carla Moran Guizan, Peter Baumgartner, S. Heinen","doi":"10.23919/EuMIC54520.2022.9923529","DOIUrl":"https://doi.org/10.23919/EuMIC54520.2022.9923529","url":null,"abstract":"This paper presents slow wave transmission lines in a 16 nm CMOS technology, including a tunable slow wave CPW. They are measured up to 67 GHz. Electromagnetic simulation combined with parasitic extraction and characterization-based transistor models predict accurately phase constant. Attenuation is harder to simulate and requires silicon verification. The tunability is achieved by modifying the connection to the shield of the line using highly scaled FinFET MOS transistors as switching elements, leaving 65% of the area under the top metals free. Phase constant difference is 20.5 o/mm at 50 GHz, with a maximum attenuation constant of 2.3 dB/mm for a line width of 48 μm.","PeriodicalId":338291,"journal":{"name":"2022 17th European Microwave Integrated Circuits Conference (EuMIC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122430151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Single-Stage Low-Noise SiGe HBT Distributed Amplifier with 13 dBm Output Power and 20 dB Gain in D-Band and over 170 GHz Bandwidth 一种单级低噪声SiGe HBT分布式放大器，输出功率为13dbm，增益为20db，带宽超过170ghz
2022 17th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2022-09-26 DOI: 10.23919/EuMIC54520.2022.9923462
Y. Baeyens, M. Mansha, H. Rücker
{"title":"A Single-Stage Low-Noise SiGe HBT Distributed Amplifier with 13 dBm Output Power and 20 dB Gain in D-Band and over 170 GHz Bandwidth","authors":"Y. Baeyens, M. Mansha, H. Rücker","doi":"10.23919/EuMIC54520.2022.9923462","DOIUrl":"https://doi.org/10.23919/EuMIC54520.2022.9923462","url":null,"abstract":"This paper presents a single-stage distributed amplifier with an average gain of 19 dB and over 170 GHz bandwidth (measurement limited) resulting in > 1.5 THz gain-bandwidth product (GBW). The amplifier is composed of 10 gain sections using an emitter follower buffered cascode stage and is implemented in a 130-nm SiGe BiCMOS process with 470 GHz fT/ 650 GHz fmaxHBT. The amplifier has over 14 dBm saturated output power (Psat) in W-Band and averages 13 dBm Psat with 20 dB gain in D-Band. Additionally, an average noise figure of 4.7 dB was measured over the complete 75 - 110 GHz range. This amplifier has, to the author's knowledge, the highest single-stage GBW reported to date while at the same time providing high output power and the best reported wideband noise figure for SiGe BiCMOS amplifiers in W-Band.","PeriodicalId":338291,"journal":{"name":"2022 17th European Microwave Integrated Circuits Conference (EuMIC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122725531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Stabilisation and burn-in of X-band GaN HPA MMICs for space applications 用于空间应用的x波段GaN HPA mmic的稳定和老化
2022 17th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2022-09-26 DOI: 10.23919/EuMIC54520.2022.9923473
V. Valenta, Gearoid Loughnane, C. España, J. Latti, A. Barnes, J. Roux, O. del Rio, G. Rubio-Cidre, Mario Ramírez-Torres, V. Serru, Laurent Caillé
{"title":"Stabilisation and burn-in of X-band GaN HPA MMICs for space applications","authors":"V. Valenta, Gearoid Loughnane, C. España, J. Latti, A. Barnes, J. Roux, O. del Rio, G. Rubio-Cidre, Mario Ramírez-Torres, V. Serru, Laurent Caillé","doi":"10.23919/EuMIC54520.2022.9923473","DOIUrl":"https://doi.org/10.23919/EuMIC54520.2022.9923473","url":null,"abstract":"This paper reports on the stabilisation and burn-in of X-band GaN HPA MMICs that are used in the Solid State Power Amplifier modules of an X-band multi-beam active antenna developed in the frame of ESA's PACIS3 Partnership Project between the satellite operator, HISDESAT and the European Space Agency (ESA). Test results that were extended to 2000 hours confirm excellent stability of the selected space evaluated GaN GH25-10 process as well as suitability of the stabilisation and burn-in strategy adopted for the manufacturing of the flight units.","PeriodicalId":338291,"journal":{"name":"2022 17th European Microwave Integrated Circuits Conference (EuMIC)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116811490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Ka-band low noise amplifier in 0.1 $mu mathrm{m}$ Gallium Arsenide pHEMT process 一种0.1 $mu mathm {m}$砷化镓pHEMT工艺ka波段低噪声放大器
2022 17th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2022-09-26 DOI: 10.23919/EuMIC54520.2022.9923506
Duc Dung Vu, S. Chakraborty, Quoc Toan Chau, Andrew Jones, Melissa C. Gorman
{"title":"A Ka-band low noise amplifier in 0.1 $mu mathrm{m}$ Gallium Arsenide pHEMT process","authors":"Duc Dung Vu, S. Chakraborty, Quoc Toan Chau, Andrew Jones, Melissa C. Gorman","doi":"10.23919/EuMIC54520.2022.9923506","DOIUrl":"https://doi.org/10.23919/EuMIC54520.2022.9923506","url":null,"abstract":"A compact, high-gain Ka-band low noise amplifier implemented in WIN Semiconductor's 0.1 $mumathbf{m}$ Gallium Arsenide process is presented in this paper. The amplifier consists of three stages with source inductive feedback at the common source of the first stage to achieve simultaneous noise and input match. The amplifier operates at 3 V drain voltage and -0.4 V gate voltage. The measured small signal gain of the amplifier is approx. 30 dB between 26 to 36 GHz, at a nominal bias, with a gain flatness of 0.65 dB. The measured average noise figure is 1.3 dB across the band for a nominal bias. The amplifier achieves a saturated output power of 16 dBm at a nominal bias and 17.5 dBm at a high bias across most of the band. The output P1dB of the amplifier is 16 dBm. The size of the amplifier is 1.1mm x 0.9 mm including the RF and DC pads.","PeriodicalId":338291,"journal":{"name":"2022 17th European Microwave Integrated Circuits Conference (EuMIC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117019027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
46% Peak PAE 28 GHz High Linearity Stacked-FET Power Amplifier IC with a Novel Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS 基于45纳米SOI CMOS的新型两步自适应偏置电路的46%峰值PAE 28 GHz高线性叠加场效应管功率放大器集成电路
2022 17th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2022-09-26 DOI: 10.23919/EuMIC54520.2022.9923449
T. Sugiura, T. Yoshimasu
{"title":"46% Peak PAE 28 GHz High Linearity Stacked-FET Power Amplifier IC with a Novel Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS","authors":"T. Sugiura, T. Yoshimasu","doi":"10.23919/EuMIC54520.2022.9923449","DOIUrl":"https://doi.org/10.23919/EuMIC54520.2022.9923449","url":null,"abstract":"This paper presents a 28 GHz high linearity power amplifier (PA) IC with a novel two-step adaptively controlled bias circuit for 5th generation (5G) mobile terminal applications in a 45-nm silicon on insulator (SOI) CMOS process. The novel bias circuit adaptively controls the gate voltage of a stacked-FET by a step procedure to improve the 1dB compression point (P1dB) and efficiency in the several-dB back-off region. The PA employs a 3-stacked-FET structure to overcome the low breakdown voltage issue in scaled MOSFETs. At a supply voltage of 3.5 V, the fabricated PA exhibits a peak power added efficiency (PAE) of 46.0%, a saturated output power of 20.5 dBm, a 3 dB output power back-off efficiency of 35.2%, a 6 dB output power back-off efficiency of 26.0% and a small signal gain of 15.0 dB. The PA IC occupies only 0.23 mm2.","PeriodicalId":338291,"journal":{"name":"2022 17th European Microwave Integrated Circuits Conference (EuMIC)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130535828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 8–18 GHz Low Noise Variable Gain Amplifier with 30 dB Gain Control Range 具有30db增益控制范围的8 - 18ghz低噪声可变增益放大器
2022 17th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2022-09-26 DOI: 10.23919/EuMIC54520.2022.9923440
Kutay Altintas, T. A. Ozkan, M. Yazici, M. Kaynak, Y. Gurbuz
{"title":"A 8–18 GHz Low Noise Variable Gain Amplifier with 30 dB Gain Control Range","authors":"Kutay Altintas, T. A. Ozkan, M. Yazici, M. Kaynak, Y. Gurbuz","doi":"10.23919/EuMIC54520.2022.9923440","DOIUrl":"https://doi.org/10.23919/EuMIC54520.2022.9923440","url":null,"abstract":"This brief presents a single-stage current steering, low noise variable gain amplifier with a novel amplitude and phase error reduction method. The design is implemented in IHP's 0.13 μm SiGe BiCMOS technology for 8–18 GHz. At the highest gain setting, S21 is 12.4 dB, the minimum noise figure is 1.93 dB, and the maximum input 1-dB compression point is 3.9 dBm. Fine gain control steps are achieved up to 30 dB with 0.5 dB increments. The maximum measured rms phase and amplitude errors are 12.3° and 0.49 dB, respectively. The proposed design consumes 24 mW DC power and occupies 0.58 mm2 including pads. To the best of the authors' knowledge, our work achieves the lowest noise figure and highest IP 1dB are achieved among the published variable gain amplifiers.","PeriodicalId":338291,"journal":{"name":"2022 17th European Microwave Integrated Circuits Conference (EuMIC)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126233902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
20 GHz LNA and 29 GHz PA on SiGe BiCMOS technology for SatCom phased array systems 用于卫星通信相控阵系统的SiGe BiCMOS技术的20 GHz LNA和29 GHz PA
2022 17th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2022-09-26 DOI: 10.23919/EuMIC54520.2022.9923435
Matteo Fumagalli, A. Colzani, A. Fonte
{"title":"20 GHz LNA and 29 GHz PA on SiGe BiCMOS technology for SatCom phased array systems","authors":"Matteo Fumagalli, A. Colzani, A. Fonte","doi":"10.23919/EuMIC54520.2022.9923435","DOIUrl":"https://doi.org/10.23919/EuMIC54520.2022.9923435","url":null,"abstract":"This paper presents a K-band single-ended Low-Noise Amplifier (LNA) and a Ka-band single-ended Power Amplifier (PA) for a SatCom phased-array transceiver. The two circuits have been developed in 130-nm SiGe:C BiCMOS technology and fully characterized. In particular, the PA achieves 28.5 dB peak small-signal gain, 38.8 % peak power added efficiency (PAE), and an OIP3 better than 23.7 dBm within the entire operating frequency band. The maximum power consumption is 76 mW with a 2 V supply voltage, and it occupies an area of 1234 μm × 758 μm, pads included. The LNA achieves 33 dB peak power gain, 2.3 dB minimum noise figure, and -20 dBm IIP3 at 20 GHz. The NF, in the entire frequency band of interest, is less than 2.6 dB. It exhibits a power consumption of 20.7 mW with a supply voltage of 2.4 V and occupies an area of 1000 μm × 800 μm pads included.","PeriodicalId":338291,"journal":{"name":"2022 17th European Microwave Integrated Circuits Conference (EuMIC)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131905600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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